DLA SMD-5962-00529-2000 MICROCIRCUIT DIGITAL ADVANCED CMOS 16-BIT BUFFER LINE DRIVER WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SILICON《单片硅数字微电路先进CMOS 16位缓冲器 线路驱动器与三.pdf

1、LTR PMIC NIA DESCRIPTION DATE (YR-MO-DA) APPROVED I PREPAREDBY Joseph A. Kerby STANDARD MICROCIRCUIT DRAWING CHECKED BY Charles F. Saffle, Jr. THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC NIA DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216 A

2、PPROVEDBY Monica L. Poelking I I DRAWING APPROVAL DATE 00-06-28 REVISION LEVEL A MICROCIRCUIT, DIGITAL, ADVANCED CMOS, STATE OUTPUTS, lTL COMPATIBLE INPUTS, MONOLITHIC SILICON 16-BIT BUFFER/LINE DRIVER WITH THREE- SIZE A I 67268 I 5962-00529 SHEET 1 OF 17 SCC FORM 2233 iPR 97 DISTRIBUTION STATEMENT

3、A. Approved for public release; distribution is unlimited. 5962-E265-00 Licensed by Information Handling Services1. SCOPE DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and

4、 d) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part )r Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. REVISION LEVEL SHEET 2 1.2 m. The PIN is as

5、 shown in the following example: 5162 , 00529 i i Federal RHA Device Device Case Lead stock class designator tvpe class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) I (see 1.2.3) V Drawing number 1.2.1 RHA desimator. Device classes Q and V RHA marked devices m

6、eet the MIL-PRF-38535 specified RHA levels and are narked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A ;pecified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device tvpe(s). Th

7、e device type(s) identify the circuit function as follows: Device tvpe o1 Generic number Circuit function 54ACTQ16541 16-bit bufferlline driver with three-state outputs, TL compatible inputs 1.2.3 Device class desimator. The device class designator is a single letter identifying the product assuranc

8、e level as ollows: Device class M Device requirements documentation Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A QorV Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). T

9、he case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive desimator Terminals X GDFPl -F48 48 Packacie stvle Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix 4 for device class M.

10、 STAN DARD MICROCIRCUIT DRAWING 5962-00529 DSCC FORM 2233 APR 97 Licensed by Information Handling Services1.3 Absolute maximum ratincis. I/ z/ 31 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 Supply voltage range (VCC) . -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC

11、 + 0.5 V dc DC output voltage range (VOIJT) . -0.5 V dc to VCC + 0.5 V dc DC input clamp current (IIK): VIN = -0.5 V . -20 mA VIN = Vcc + 0.5V . +20 mA VOUT = -0.5 V -20 mA VOUT= Vcc + 0.5V +20 mA DC output current (IOUT) per output pin k50 mA DC VCC or GND current (Icc, IGND) per pin k50 mA Storage

12、 temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 1 O seconds) . +300“C Thermal resistance, junction-to-case (Jc) . See MIL-STD-1835 Junction temperature (TJ) +175“C Maximum power dissipation (PD) 750 mW DC output clamp current (10): REVISION LEVEL SHEET 3 1.4 Recommended operat

13、inci conditions. z/ 31 Supply voltage range (VCC) . +4.5 V dc to +5.5 V dc Input voltage range (VIN) . +O.O V dc to VCC Output voltage range (VOIJT) +O.O V dc to VCC Maximum low level input voltage (VIL) . 0.8 V dc Minimum high level input voltage (VIH) 2.0 V dc Case operating temperature range (TC)

14、 . -55C to +125“C Minimum input edge rate Maximum high level output current (10) . -24 mA Maximum low level output current (IoL) . +24 mA (VIN from 0.8 V to 2.0 V or from 2.0 V to 0.8 V) (AV/At) 125 mV/ns !/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extende

15、d operation at the maximum levels may degrade performance and affect reliability. :/ Unless otherwise noted, all voltages are referenced to GND. j/ The limits for the parameters specified herein shall apply over the full specified VCC range and case temperature range Of -55C to +125“C. STAN DARD MIC

16、ROCIRCUIT DRAWING 5962-00529 DSCC FORM 2233 APR 97 Licensed by Information Handling Services2. APPLICABLE DOCUMENTS DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part )f th

17、is drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the ssue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the ;elicitation. SPEC I FI CATI ON DEPARTMENT OF DEFENSE MIL

18、-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-973 - Configuration Management. MIL-STD-1835 - Interface Standard For Microcircuit Case Outlines. HANDBOOKS DEPARTMENT OF DEFENSE MIL-

19、HDBK-103 - MIL-HDBK-780 - Standard Microcircuit Drawings. List of Standard Microcircuit Drawings (SMDs). Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization locument Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 191

20、 11 -5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Jnless otherwise specified, the issues of the documents which are DOD adopted are those listed in the issue of the DODISS :ited in the solicitation. Unless otherwise sp

21、ecified, the issues of documents not listed in the DODISS are the issues of the locuments cited in the solicitation. ELECTRONIC INDUSTRIES ASSOCIATION (EIA) JEDEC Standard No. 20 - Standardized for Description of 54174ACXXXX and 54174ACTXXXX Advanced High-speed CMOS Devices. (Applications for copies

22、 should be addressed to the Electronics Industries Association, 2001 Eye Street, NW, Nashington, DC 20006.) (Non-Government standards and other publications are normally available from the organizations that prepare or distribute he documents. These documents may also be available in or through libr

23、aries or other informational services.) REVISION LEVEL SHEET 4 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of his drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations

24、 unless a ;pecific exemption has been obtained. STAN DARD MICROCIRCUIT DRAWING 5962-00529 DSCC FORM 2233 APR 97 Licensed by Information Handling Services3. REQUIREMENTS DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 3.1 Item requirements. The individual item requirements for device classes

25、 Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M sha

26、ll be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herei n . REVISION LEVEL SHEET 5 3.2 Desicin, construction, and phvsical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device cl

27、asses Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1 3.2.3 Truth table. The truth table shall be as specified o

28、n figure 2. 3.2.4 Lociic diaciram. The logic diagram shall be as specified on figure 3. 3.2.5 Ground bounce load circuit and waveforms. The ground bounce load circuit and waveforms shall be as specified on Figure 4. 3.2.6 Switchinci waveforms and test circuit. The switching waveforms and test circui

29、t shall be as specified on figure 5. 3.2.7 Radiation exposure circuit. The radiation exposure circuit shall be as specified when available. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics a

30、nd postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table

31、 I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marki

32、ng the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance ma

33、rk. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be

34、required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The

35、 certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appe

36、ndix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or For device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of chancie for devic

37、e class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in MIL-STD-973. STAN DARD MICROCIRCUIT DRAWING 5962-00529 DSCC FORM 2233 APR 97 Licensed by Information Handling Services3.9 V

38、erification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the )ption to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made ivailable onshore at the option of the reviewer. DEFENSE SUP

39、PLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 3.1 O Microcircuit ciroup assicinment for device class M. Device class M devices covered by this drawing shall be in nicrocircuit group number 37 (see MIL-PRF-38535, appendix A). REVISION LEVEL SHEET 6 4. QUALITY ASSURANCE PROVISIONS 4.1 Samplinci and in

40、spection. For device classes Q and V, sampling and inspection procedures shall be in accordance with dIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan ;hall not affect the form, fit, or function as described herein. For device clas

41、s M, sampling and inspection procedures shall be in iccordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted )n all devices prior to qualification and technology conformance inspection. For devic

42、e class M, screening shall be in iccordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1 O1 5 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit

43、shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in

44、test method 1 O1 5. (2) TA = +125“C, minimum. Interim and final electrical test parameters shall be as specified in table II herein. b. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specif

45、ied in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or prep

46、aring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1 O15 of MIL-STD-883. b. c. Interim and final electrical test parameters shall be as specified in table II herein. Add

47、itional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B. 4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in iccordance with MIL-PRF-38535. Inspections to be

48、 performed shall be those specified in MIL-PRF-38535 and herein for groups 4, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.3.1 Electrostatic discharcie sensitivitv qualification inspection . Electrostatic discharge sensitivity (ESDS) testing shall be ierformed in accordance with MIL-STD-8

49、83, method 3015. ESDS testing shall be measured only for initial qualification and ifter process or design changes which may affect ESDS classification. 4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with dIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein except where option 2 of dIL-PRF-38535 permits alternate in-line control testing. Quality conformance inspection for device class M shall be in iccordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be perfo