DLA SMD-5962-01521 REV B-2012 MICROCIRCUIT DIGITAL-LINEAR RADIATION HARDENED 9 AMP NON-INVERTING MOSFET DRIVER MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Correct rise and fall response time test limits as specified in table I. - ro 01-06-11 R. Monnin B Redraw. Update drawing to current requirements. - drw 12-04-30 Charles F. Saffle REV SHEET REV B B B B SHEET 15 16 17 18 REV STATUS REV B B B B B B

2、 B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Rick Officer DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF D

3、EFENSE CHECKED BY Rajesh Pithadia APPROVED BY Raymond Monnin MICROCIRCUIT, DIGITAL-LINEAR, RADIATION HARDENED, 9 AMP NON-INVERTING MOSFET DRIVER, MONOLITHIC SILICON DRAWING APPROVAL DATE 01-05-18 AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-01521 SHEET 1 OF 18 DSCC FORM 2233 APR 97 5962-E31

4、3-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01521 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product

5、 assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA)

6、levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 F 01521 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1

7、 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A d

8、ash (-) indicates a non-RHA device. 1.2.2 Device type. The device type identifies the circuit function as follows: Device type Generic number Circuit function 01 ISL74422ARH Radiation hardened, non-inverting 9 amp MOSFET driver 1.2.3 Device class designator. The device class designator is a single l

9、etter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification

10、to MIL-PRF-38535 1.2.4 Case outline. The case outline is as designated in MIL-STD-1835 as follows: Outline letter Descriptive designator Terminals Package style X CDFP4-F16 16 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, a

11、ppendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01521 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings.

12、 1/ Supply voltage (VS) 20 V Input voltage range (VIN) . GND 5.0 V to +VS+0.3 V 2/ DC input current, any one input . 10 mA Output short circuit duration (single supply) . Continuous 3/ Maximum junction temperature (TJ) . 175C Maximum storage temperature -65C to +150C Maximum lead temperature (solder

13、ing 10 seconds) 265C Thermal resistance, junction-to-case (JC) 12C/W Thermal resistance, junction-to-ambient (JA) . 80C/W 4/ 1.4 Recommended operating conditions. Supply voltage range (VS) . 7 V to 18 V Operating ambient temperature range . -55C to +125C 1.5 Radiation features. Maximum total dose av

14、ailable: (dose rate = 50 - 300 rad(Si)/s) Device classes M, Q, and V 300 Krads (Si) Single event latch up (SEL) No latch up 5/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the exte

15、nt specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method

16、 Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.d

17、la.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing

18、 in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/

19、Inputs must not go more negative than GND - 5.0 V. 3/ Short circuit from the output to VScan cause excessive heating and eventual destruction. 4/ JAis measured with the component mounted on an evaluation PC board in free air. 5/ Device type 01 uses dielectrically isolated (DI) technology and latch-u

20、p is physically not possible. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01521 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requ

21、irements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herei

22、n. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and ph

23、ysical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal

24、connections. The terminal connections shall be as specified on figure 1. 3.2.3 Logic diagram. The logic diagram shall be as specified on figure 2. 3.2.4 Truth table. The truth table shall be as specified on figure 3. 3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be maintaine

25、d by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics

26、 and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in

27、 table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on th

28、e device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certificatio

29、n mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-

30、38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of comp

31、liance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendi

32、x A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device cl

33、ass M. For device class M, notification to DLA Land and Maritime -VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA L

34、and and Maritimes agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class

35、M devices covered by this drawing shall be in microcircuit group number 89 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01521 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-399

36、0 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Power supply current, low ISSBVS= 18 V, VIN= 0.8 V 1, 2, 3 01 100 A low M,D,P,L,R,F 2

37、/ 1 100 Power supply current, high ISSBVS= 18 V, VIN= 10.0 V 1, 2 01 1.00 mA high 3 1.50 M,D,P,L,R,F 2/ 1 1.00 Input current, low IILVS= 18 V, VIN= -5.0 V 1, 2, 3 01 -3 +3 A M,D,P,L,R,F 2/ 1 -3 +3 Input current, high IIHVS= 18 V, VIN= 18 V 1, 2, 3 01 -3 +3 A M,D,P,L,R,F 2/ 1 -3 +3 Voltage output, lo

38、w VOLVS= 18 V, IOUT= 10 mA 1, 2, 3 01 0.8 V M,D,P,L,R,F 2/ 1 0.8 Voltage output, high VOHVS= 18 V, IOUT= 10 mA 1, 2, 3 01 17.0 V M,D,P,L,R,F 2/ 1 17.0 Input voltage, low VIL1VS= 18 V, limits applied during functional test 1, 2, 3 01 0.8 V M,D,P,L,R,F 2/ 1 0.8 VIL2VS= 7 V, limits applied during funct

39、ional test 1, 2, 3 0.8 M,D,P,L,R,F 2/ 1 0.8 Input voltage, high VIH1VS= 18 V, limits applied during functional test 1, 2, 3 01 5.0 V M,D,P,L,R,F 2/ 1 5.0 VIH2VS= 7 V, limits applied during functional test 1, 2, 3 4.0 M,D,P,L,R,F 2/ 1 4.0 See footnotes at end of table. Provided by IHSNot for ResaleNo

40、 reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01521 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics continued. Test Symbol Conditions 1/ -55C

41、TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Functional test FTVS= 7 V, VS= 18 V 7, 8A, 8B 01 M,D,P,L,R,F 2/ 7 Output resistance, output high RONHVS= 18 V, VIN= 5.0 V, 1, 3 01 1.3 IOUT= 175 mA to 225 mA 2 1.5 M,D,P,L,R,F 2/ 1 1.3 Output resistance, output low

42、 RONLVS= 18 V, VIN= 0.8 V, 1, 3 01 1.5 IOUT= 175 mA to 225 mA 2 1.7 M,D,P,L,R,F 2/ 1 1.5 Propagation delay, low tPHLVS= 18 V, CL= 10 nF 9, 11 01 75 ns 10 95 M,D,P,L,R,F 2/ 9 75 Propagation delay, high tPLHVS= 18 V, CL= 10 nF 9, 11 01 50 ns 10 70 M,D,P,L,R,F 2/ 9 50 Response time, fall TF VS= 18 V, C

43、L= 10 nF 9, 11 01 90 ns 10 105 M,D,P,L,R,F 2/ 9 90 Response time, rise TR VS= 18 V, CL= 10 nF 9, 11 01 105 ns 10 120 M,D,P,L,R,F 2/ 9 105 1/ VS= as specified. 2/ The devices supplied to this drawing meet all levels M, D, P, L, R, F of irradiation. However, this device is only tested at the “F“ level

44、. Pre and Post irradiation values are identical unless otherwise specified in Table I. When performing post irradiation electrical measurements for any RHA level, TA= +25C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING

45、 SIZE A 5962-01521 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 Device type 01 Case outline X Terminal number Terminal symbol 1 NC 2 NC 3 VS(LOGIC INPUT BUFFER (IB) 1/ 4 VIN5 GND (LOGIC RTN INPUT BUFFER (IB) 2/ 6 NC 7 NC 8 GND (OUTPUT BUFFER (OB) 3/

46、9 GND (OUTPUT BUFFER (OB) 3/ 10 NC 11 NC 12 -VOUT4/ 13 +VOUT4/ 14 NC 15 VS(OUTPUT BUFFER (OB) 5/ 16 VS(OUTPUT BUFFER (OB) 5/ 1/ VS(LOGIC INPUT BUFFER) pin 3 provides the supply voltage for the control logic. It is not internally connected to pins 15 and 16 for noise immunity purposes, but it must be

47、 connected externally. 2/ GND (LOGIC RTN INPUT BUFFER) pin 5 is the control logic return. It is not internally connected to pins 8 and 9 for noise immunity purposes, but it must be connected externally. 3/ GND (OUTPUT BUFFER) pins 8 and 9 must be connected to GND. 4/ VOUTpins 12 and 13 must be exter

48、nally connected. 5/ VS(OUTPUT BUFFER) pins 15 and 16 must be connected to VS. FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01521 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 8 DSCC FORM 2234 APR 97 FIGURE 2. Logic diagram. INPUT OUTPUT 1 1 0 0 FIGURE 3. Truth table. Provided by IHSNot for ResaleNo reproduction or networking permitted with