ImageVerifierCode 换一换
格式:PDF , 页数:28 ,大小:170.09KB ,
资源ID:698216      下载积分:10000 积分
快捷下载
登录下载
邮箱/手机:
温馨提示:
如需开发票,请勿充值!快捷下载时,用户名和密码都是您填写的邮箱或者手机号,方便查询和重复下载(系统自动生成)。
如填写123,账号就是123,密码也是123。
特别说明:
请自助下载,系统不会自动发送文件的哦; 如果您已付费,想二次下载,请登录后访问:我的下载记录
支付方式: 支付宝扫码支付 微信扫码支付   
注意:如需开发票,请勿充值!
验证码:   换一换

加入VIP,免费下载
 

温馨提示:由于个人手机设置不同,如果发现不能下载,请复制以下地址【http://www.mydoc123.com/d-698216.html】到电脑端继续下载(重复下载不扣费)。

已注册用户请登录:
账号:
密码:
验证码:   换一换
  忘记密码?
三方登录: 微信登录  

下载须知

1: 本站所有资源如无特殊说明,都需要本地电脑安装OFFICE2007和PDF阅读器。
2: 试题试卷类文档,如果标题没有明确说明有答案则都视为没有答案,请知晓。
3: 文件的所有权益归上传用户所有。
4. 未经权益所有人同意不得将文件中的内容挪作商业或盈利用途。
5. 本站仅提供交流平台,并不能对任何下载内容负责。
6. 下载文件中如有侵权或不适当内容,请与我们联系,我们立即纠正。
7. 本站不保证下载资源的准确性、安全性和完整性, 同时也不承担用户因使用这些下载资源对自己和他人造成任何形式的伤害或损失。

版权提示 | 免责声明

本文(DLA SMD-5962-01532 REV C-2009 MICROCIRCUIT MEMORY DIGITAL CMOS 1024K x 8-BIT (8 M) RADIATION-HARDENED SRAM MULTICHIP MODULE.pdf)为本站会员(eventdump275)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-01532 REV C-2009 MICROCIRCUIT MEMORY DIGITAL CMOS 1024K x 8-BIT (8 M) RADIATION-HARDENED SRAM MULTICHIP MODULE.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Rename package X to Y, change IDDfrom 125 mA to 150 mA, IDD1 from 180 mA to 220 mA, and IDD2from 80 mA to 40 mA. ksr 02-03-29 Raymond Monnin B Changed IDD2in Table I; for subgroups 1 and 3 changed from 10 mA to 4 mA, and for subgroup 2 changed fr

2、om 40 mA to 25 mA. ksr 03-02-21 Raymond Monnin C Section 1.5 dose rate changed from 3 rads(Si)/s) to (50 300) rads(Si)/s). Boilerplate update, part of 5 year review. ksr 09-09-10 Charles F. Saffle REV SHEET REV C C C C C C C C C C C C C SHEET 15 16 17 18 19 20 21 22 23 24 25 26 27 REV STATUS REV C C

3、 C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Kenneth Rice DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING CHECKED BY Raj Pithadia THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPRO

4、VED BY Raymond Monnin MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1024K x 8-BIT (8 M), RADIATION-HARDENED SRAM, MULTICHIP MODULE AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 02-03-21 AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-01532 SHEET 1 OF 27 DSCC FORM 2233 APR 97 5962-E079

5、-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01532DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents thre

6、e product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V), and for appropriate satellite and similar applications (device class T). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifyin

7、g Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. For device class T, the user is encouraged to review the manufacturers Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended appli

8、cation. 1.2 PIN. The PIN shall be as shown in the following example: 5962 D 01532 01 T Y C Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. D

9、evice classes Q, T and V RHA marked devices shall meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535 appendix A specified RHA levels and shall be marked with the appropriate RHA designator. A dash (

10、-) indicates a non-RHA device. 1.2.2 Device types. The device types shall identify the circuit function as follows: Device type Generic number 1/ Circuit function Access time 01 8Q1024K8 Dual 512K X 8-bit rad-hard low voltage SRAM die 25 ns 1.2.3 Device class designator. The device class designator

11、shall be a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q, V Certification a

12、nd qualification to MIL-PRF-38535 T Certification and qualification to MIL-PRF-38535 with performance as specified in the device manufacturers approved quality management plan 1.2.4 Case outline(s). The case outline(s) shall be as designated in MIL-STD-1835 and as follows: Outline letter Descriptive

13、 designator Terminals Package style Y 2/ See figure 1 44 Flat pack 1.2.5 Lead finish. The lead finish shall be as specified in MIL-PRF-38535 for classes Q, T and V or MIL-PRF-38535, appendix A for device class M. _ 1/ Generic numbers are also listed on the Standard Microcircuit Drawing Source Approv

14、al Bulletin at the end of this document and will also be listed in QML-38535 and MIL-HDBK-103. 2/ Original release indicated X designation, however no parts were shipped with the X designator. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD

15、MICROCIRCUIT DRAWING SIZE A 5962-01532DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 3/ 4/ Supply voltage range, (VDD) . -0.5 V dc to +4.6 V dc Voltage range on any input pin -0.5 V dc to +4.6 V dc Voltage range o

16、n any output pin -0.5 V dc to +4.6 V dc Input current, dc . + 10 mA Power dissipation . 1.0 W Operating case temperature range, (TA) -40C to +125C Storage temperature range, (TSTG) -65C to +150C Junction temperature, (TJ) . +150C Thermal resistance, junction-to-case, (JC): Case Y +10C/W 1.4 Recommen

17、ded operating conditions. Supply voltage range, (VDD) . +3.0 V dc to +3.6 V dc Supply voltage, (VSS) . 0 V dc Input voltage, dc. 0 V dc to VDDOperating case temperature, (TA) -40C to +125C 1.5 Radiation features Maximum total dose available (dose rate = (50 300) rads(Si)/s) . 50 x 103rads(Si) Single

18、 event phenomenon (SEP) effective linear energy threshold (LET) with no upsets 1 MeV-cm2/mg 5/ with no latch-up . 80 MeV-cm2/mg 5/ 1.6 Digital logic testing for device classes T, Q, and V. Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) 100 percent 2. APPLICAB

19、LE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT

20、 OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-10

21、3 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) _ 3/ St

22、resses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 4/ All voltage values in this drawing are with respect to VSS. 5/ Contact the device manufacturer for detailed lot information.

23、Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01532DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 2.2 Non-Government publications. The following docu

24、ment(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM Standard F1192 - Standard Guide for the Measurement of Single

25、 Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices. (Applications for copies of ASTM publications should be addressed to: ASTM International, PO Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959; http:/www.astm.org.) ELECTRONICS INDUSTRIES ASSOCIATION (E

26、IA) JEDEC Standard EIA/JESD78 - IC Latch-Up Test. (Applications for copies should be addressed to the Electronics Industries Association, 2500 Wilson Boulevard, Arlington, VA 22201; http:/www.jedec.org.) (Non-Government standards and other publications are normally available from the organizations t

27、hat prepare or distribute the documents. These documents also may be available in or through libraries or other informational services.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. No

28、thing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q, T and V shall be in accordance with MIL-PRF-38535, and as specified herein or as mo

29、dified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not effect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. 3.2 Des

30、ign, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q, T and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline(s). The case outline(s) shall be in accordance

31、with 1.2.4 herein and as specified on figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Truth table(s). The truth table(s) shall be as specified on figure 3. 3.2.4 Output load circuit. The output load circuit shall be as specified on figure 4. 3.

32、2.5 Timing waveforms. The timing waveforms shall be as specified on figure 5. 3.2.6 Radiation test circuit. The radiation test circuit shall be as specified on figure 6. 3.2.7 Functional tests. Various functional tests used to test this device are contained in appendix A. If the test patterns cannot

33、 be implemented due to test equipment limitations, alternate test patterns to accomplish the same results shall be allowed. For device class M, alternate test patterns shall be maintained under document revision level control by the manufacturer and shall be made available to the preparing or acquir

34、ing activity upon request. For device classes Q, T and V, alternate test patterns shall be under the control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the preparing or acquiring activity upon request. 3.3 Electrical perf

35、ormance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and post-irradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. Provided by IHSNot for Res

36、aleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01532DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 3.4 Electrical test requirements. The electrical test requirements shall be t

37、he subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible

38、due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q, T, and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in ac

39、cordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q, T and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of

40、compliance. For device classes Q, T and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to b

41、e listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q, T and V, the requirements of MIL-

42、PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q, T and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each

43、 lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and revi

44、ew for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignm

45、ent for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 41 (see MIL-PRF-38535, appendix A). 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as

46、 modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class T, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 and the device manufacturers QM plan,

47、including screening, qualification, and conformance inspection. The performance envelope and reliability information shall be as specified in the manufacturers QM plan. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. Provided by IHSNot fo

48、r ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01532DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Test conditions -40C VIH(min) then Q will be in three-state for the entire cycle. 2. G high for tAVAVcycle. FIGURE 5. Timing waveforms - continued. Provided by IHSNot for ResaleNo reproduction or networking

copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
备案/许可证编号:苏ICP备17064731号-1