DLA SMD-5962-02501 REV C-2010 MICROCIRCUIT MEMORY DIGITAL CMOS 128K x 8-BIT LOW VOLTAGE (3 3 V) SRAM MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Corrected L dimension for case outline X, RHA editorial information added to selected paragraphs. ksr 03-08-29 Raymond Monnin B Corrected 1.3 Power dissipation from 1W to 0.2W; Thermal resistance junction to case from 10C/W to 14C/W; added ICCDR,

2、TCDR, and TRto table I, and added additional waveform to figure 5. ksr 04-09-07 Raymond Monnin C Update drawing to current requirements. Editorial changes throughout. ksr 10-02-18 Charles F. Saffle REV SHEET REV C C C C C C SHEET 15 16 17 18 19 20 REV STATUS REV C C C C C C C C C C C C C C OF SHEETS

3、 SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Kenneth Rice DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING CHECKED BY Rajesh Pithadia MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K x 8-BIT, LOW VOLTAGE (3.3 V) SRAM, MONOLITHIC S

4、ILICON THIS DRAWING IS AVAILABLE FOR USE BY All DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A APPROVED BY Raymond Monnin DRAWING APPROVAL DATE 02 - 05 - 13 REVISION LEVEL C SIZE A CAGE CODE 67268 5962-02501 SHEET 1 OF 20 DSCC FORM 2233 APR 97 5962-E192-10 Provided by IHSNot for Resa

5、leNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 SIZE A 5962-02501 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels

6、 consisting of high reliability (device classes Q and M), space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in th

7、e PIN. 1.2 PIN. The PIN shall be as shown in the following example: 5962 - 02501 01 Q X C Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. De

8、vice classes Q and V RHA marked devices shall meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535 appendix A specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) i

9、ndicates a non-RHA device. 1.2.2 Device types. The device types shall identify the circuit function as follows: Device type Generic number 1/ Circuit function Access time 01 MMDJ-65609EV 128K X 8-bit low voltage SRAM 40 ns 1.2.3 Device class designator. The device class designator shall be a single

10、letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q, V Certification and qualification t

11、o MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) shall be as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 32 Flat pack (400 mils) 1.2.5 Lead finish. The lead finish shall be as specified in MIL-PRF-38535 for classes

12、 Q and V or MIL-PRF-38535, appendix A for device class M. _ 1/ Generic numbers are also listed on the Standard Microcircuit Drawing Source Approval Bulletin at the end of this document and will also be listed in QML-38535 and MIL-HDBK-103. Provided by IHSNot for ResaleNo reproduction or networking p

13、ermitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 SIZE A 5962-02501 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 2/ 3/ Supply voltage range, (VCC) -0.5 V dc to +5.0 V dc Voltage range on any in

14、put pin -0.3 V dc to VCC+0.3 V dc Voltage range on any output pin -0.3 V dc to VCC+0.3 V dc Input current, dc + 10 mA Power dissipation 0.2 W Case operating temperature range, (TC) . -55C to +125C Storage temperature range, (TSTG) -65C to +150C Junction temperature, (TJ) . +175C Thermal resistance,

15、junction-to-case, (JC): Case X . +14C/W 1.4 Recommended operating conditions. Supply voltage range, (VDD) +3.0 V dc to +3.6 V dc Supply voltage, (VSS) . 0 V dc Input voltage, dc 0 V dc to VDDOperating free-air temperature, (TA) -55C to +125C 1.5 Radiation features Maximum total dose available (dose

16、rate = 0.1 rads(Si)/s) 100 krads (Si) 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those

17、cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outl

18、ines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil;quicksearch or from the Standardization Document Order Desk, 700 Robbins Avenue, B

19、uilding 4D, Philadelphia, PA 19111-5094.) _ 2/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 3/ All voltage values in this drawing are with respect to VSS. Provided by IHSN

20、ot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 SIZE A 5962-02501 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 2.2 Non-Government publications. The following document(s) form a

21、part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents which are DoD adopted are those listed in the issue of the DoDISS cited in the solicitation. Unless otherwise specified, the issues of documents not listed in the DoDISS are the issues of th

22、e documents cited in the solicitation. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM Standard F1192 - Standard Guide for the Measurement of Single Event Phenomena from Heavy Ion Irradiation of Semiconductor Devices. (Applications for copies of ASTM publications should be addressed to the Am

23、erican Society for Testing and Materials, 1916 Race Street, Philadelphia, PA 19103.) ELECTRONIC INDUSTRIES ALLIANCE (EIA) JEDEC Standard EIA/JESD78 - IC Latch-Up Test. (Applications for copies should be addressed to the Electronics Industries Association, 2500 Wilson Boulevard, Arlington, VA 22201.)

24、 (Non-Government standards and other publications are normally available from the organizations that prepare or distribute the documents. These documents also may be available in or through libraries or other informational services.) 2.3 Order of precedence. In the event of a conflict between the te

25、xt of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for devi

26、ce classes Q and V shall be in accordance with MIL-PRF-38535, and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not effect the form, fit, or function as described herein. The individual item requirements for device

27、class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and he

28、rein for device class M. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and on figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Truth table(s). The truth table(s) shall be as specified on figure 3. 3.2.4 Outp

29、ut load circuit. The output load circuit shall be as specified on figure 4. 3.2.5 Timing waveforms. The timing waveforms shall be as specified on figure 5. 3.2.6 Radiation exposure circuit. Radiation exposure circuit shall be maintained by the manufacturer under document revision level control and s

30、hall be made available to the preparing and/or acquiring activity upon request. 3.2.7 Functional tests. Various functional tests used to test this device are contained in the appendix. If the test patterns cannot be implemented due to test equipment limitations, alternate test patterns to accomplish

31、 the same results shall be allowed. For device class M, alternate test patterns shall be maintained under document revision level control by the manufacturer and shall be made available to the preparing or aquiring activity upon request. For device classes Q and V, alternate test patterns shall be u

32、nder the control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the preparing or aquiring activity upon request. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICRO

33、CIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 SIZE A 5962-02501 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and

34、 postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table

35、I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the devic

36、e. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark

37、for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 l

38、isted manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance

39、submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Cert

40、ificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class

41、M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to rev

42、iew the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 41 (

43、see MIL-PRF-38535, appendix A). 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not aff

44、ect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prio

45、r to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Delete the sequence specifie

46、d as initial (preburn-in) electrical parameters through interim (postburn-in) electrical parameters of method 5004 and substitute lines 1 through 6 of table IIA herein. b. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to th

47、e preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015. (1) Dynamic burn-in (method 1015 of MIL-STD-883, test condition D; for circuit, see 4.2.1b herein)

48、. c. Interim and final electrical parameters shall be as specified in table IIA herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 SIZE A 5962-02501 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. 1/ Test Symbol Test conditions -55C TC +125C +3.0 V VCC +3.6 V Group A subgroups Device types Limits Unit