DLA SMD-5962-02508 REV D-2012 MICROCIRCUIT DIGITAL RADIATION HARDENED LOW VOLTAGE CMOS 16-BIT BUS TRANSCEIVER WITH BUS HOLD AND THREE-STATE OUTPUTS MONOLITHIC SILICON.pdf

1、REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Correct case outline X as non-standard case outline. Change Radiation Hardness Assurance (RHA) level to R. Change VOLV, tPHL1, tPLH1, tPLZ1, tPHZ1, tPLZ2, and tPHZ2maximum limits in table I to adapt the RHA level R. Make change to footnote 3/ in t

2、able I. Editorial changes throughout. - TVN 03-10-17 Thomas M. Hess B Add device type 02. Correct DC input voltage range (VIN) and lead temperature in section 1.3. Correct input voltage range (VIN) in note 5 of figure 6, switching waveforms and test circuit. Update the boilerplate to the requirement

3、s of MIL-PRF-38535. Editorial changes throughout. - TVN 06-06-01 Thomas M. Hess C Change Radiation Hardness Assurance (RHA) level to F. - TVN 07-02-09 Thomas M. Hess D Update radiation features in section 1.5 and add SEP test table IB. Update the boilerplate paragraphs to the current requirements of

4、 MIL-PRF-38535. - MAA 12-02-16 Thomas M. Hess REV SHEET REV D D D D D D D SHEET 15 16 17 18 19 20 21 REV STATUS OF SHEETS REV D D D D D D D D D D D D D D SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Thanh V. Nguyen DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmarit

5、ime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A CHECKED BY Thanh V. Nguyen APPROVED BY Thomas M. Hess MICROCIRCUIT, DIGITAL, RADIATION HARDENED, LOW VOLTAGE CMOS, 16-BIT BUS TRANSCEIVER WITH BUS HOLD AN

6、D THREE-STATE OUTPUTS, MONOLITHIC SILICON DRAWING APPROVAL DATE 03-06-05 REVISION LEVEL D SIZE A CAGE CODE 67268 5962-02508 SHEET 1 OF 21 DSCC FORM 2233 APR 97 5962-E137-12Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING

7、DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-02508 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of c

8、ase outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 F 02508 01 V X A Federal RHA Device Devic

9、e Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the approp

10、riate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Ge

11、neric number Circuit function 01 54VCXH162245 16-bit bus transceiver with bus hold, series output resistors on A side, and three-state outputs 02 54VCXH162245 16-bit bus transceiver with bus hold, series output resistors on A side, and three-state outputs 1.2.3 Device class designator. The device cl

12、ass designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Cert

13、ification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 48 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for

14、device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-02508 REVISION LEVEL D SHEET 3 DSCC FORM

15、 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +4.6 V dc DC input voltage range (VIN) -0.5 V dc to +4.6 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc DC input/output clamp current (IIK, IOK) 50 mA DC output current (per pin) (IOUT) . 50

16、 mA DC VCCor GND current (per output pin) (ICC, IGND) 100 mA Maximum power dissipation (PD) . 400 mW Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 10 seconds) +260C Thermal resistance, junction-to-case (JC) . 22C/W Junction temperature (TJ) +150C 4/ 1.4 Recommended op

17、erating conditions. 2/ 3/ Supply voltage range (VCC): Device type 01 . +2.3 V dc to +3.6 V dc Device type 02 . +1.8 V dc to +3.6 V dc Input voltage range (VIN) -0.3 V dc to +3.6 V dc Output voltage range (VOUT). +0.0 V dc to VCCMaximum high level output current (IOH): A side: VCC= 1.8 V (device type

18、 02) . -4 mA VCC= 2.3 V to 2.7 V -8 mA VCC= 3.0 V to 3.6 V -12 mA B side: VCC= 1.8 V (device type 02) . -6 mA VCC= 2.3 V to 2.7 V -18 mA VCC= 3.0 V to 3.6 V -24 mA Maximum low level output current (IOL): A side: VCC= 1.8 V (device type 02) . +4 mA VCC= 2.3 V to 2.7 V +8 mA VCC= 3.0 V to 3.6 V +12 mA

19、 B side: VCC= 1.8 V (device type 02) . +6 mA VCC= 2.3 V to 2.7 V +18 mA VCC= 3.0 V to 3.6 V +24 mA Input rise or fall time rate (t/V): VCC= 3.0 V 0 to 10 ns/V Case operating temperature range (TC) . -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 50 300 rad(Si)/s): Fo

20、r device types 01 and 02 . 300 krads(Si) Single Event Effects (SEE) for device types 01 and 02: No Single Event Latch-up (SEL) occurs at effective LET (see 4.4.4.2) 72 MeV-cm2/mg 5/ No Single Event Upset (SEU) occurs at effective LET (see 4.4.4.2) 72 MeV-cm2/mg 5/ 1/ Stresses above the absolute maxi

21、mum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange

22、and case temperature range of -55C to +125C. 4/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883. 5/ Limits are guaranteed by design or process, but not production tested unless specified

23、 by the customer through the purchase order or contract. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-02508 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 2.

24、 APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. D

25、EPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MI

26、L-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094

27、.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192 - Standard Guide for the Measurem

28、ent of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of semiconductor Devices. (Copies of these documents are available online at http:/www.astm.org or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). 2.3 Order of precedence. In the e

29、vent of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The indi

30、vidual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individu

31、al item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and her

32、ein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 and figure 1 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Truth table. The truth

33、table shall be as specified on figure 3. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 4. 3.2.5 Ground bounce waveforms and test circuit. The ground bounce waveforms and test circuit shall be as specified on figure 5. Provided by IHSNot for ResaleNo reproduction or networkin

34、g permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-02508 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 3.2.6 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure

35、 6. 3.2.7 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter

36、 limits. Unless otherwise specified herein, the electrical performance characteristics and post irradiation parameter limits are as specified in table IA and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the su

37、bgroups specified in table II. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due t

38、o space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance

39、with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance.

40、For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an

41、approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-P

42、RF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot

43、 of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verifica

44、tion and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritimes agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option o

45、f the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 37 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD M

46、ICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-02508 REVISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test and MIL-STD-883 test method 1/ Symbol Test conditions 2/ 3/ -55C TC +125C +1.8 V VCC +3.6 V unless otherwise spe

47、cified Device type and device class VCCGroup A subgroups Limits 4/ Unit Min Max Negative input clamp voltage 3022 VIC-For input under test, IIN= -1.0 mA All Q, V Open 1 -0.4 -1.5 V High level output voltage 3006 VOHVIN= VIHminimum or VILmaximum IOH= -100 A All All 2.7 V 1, 2, 3 2.5 V 3.6 V 1, 2, 3 3

48、.4 A side VIN= VIHminimum or VILmaximum IOH= -6 mA All All 2.3 V 1 1.8 2.7 V 1 2.2 IOH= -8 mA 2.3 V 1, 2, 3 1.7 3.0 V 1 2.4 IOH= -12 mA 3.0 V 1, 2, 3 2.2 IOH= -4 mA 02 All 1.8 V 1 1.4 B side VIN= VIHminimum or VILmaximum IOH= -12 mA All All 2.3 V 1 1.8 2.7 V 1 2.2 IOH= -18 mA 2.3 V 1, 2, 3 1.7 3.0 V

49、 1 2.4 IOH= -24 mA 3.0 V 1, 2, 3 2.2 IOH= -6 mA 02 All 1.8 V 1 1.4 Low level output voltage 3007 VOLVIN= VIHminimum or VILmaximum IOL= 100 A All All 2.7 V 1, 2, 3 0.20 V 3.6 V 1, 2, 3 0.20 A side VIN= VIHminimum or VILmaximum IOL= 6 mA All All 2.3 V 1 0.40 2.7 V 1 0.40 IOL= 8 mA 2.3 V 1, 2, 3 0.60 3.0 V 1 0.55 IOL= 12 mA 3.0 V 1, 2, 3 0.80 IOL= 4 mA 02