DLA SMD-5962-05208 REV C-2010 MICROCIRCUIT MEMORY DIGITAL CMOS 512K x 8-BIT RADIATION-HARDENED LOW VOLTAGE SRAM MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Editorial corrections, removed designations for class T and N in paragraphs placed inadvertently. ksr 05-03-14 Raymond Monnin B Vendor requested change to Figure 1 case outline X note 3. Lid is not electrically connected to VSS. Add case outline

2、Y. ksr 06-01-17 Raymond Monnin C Added devices 03 and 04. Added parameter tAVELto Table I which addresses a read condition of importance between devices 01, 02 and 03, 04; corrected the Read cycle 1 and 2 waveforms, and made additions to appropriate paragraphs and Table I parameters for inclusion of

3、 new device types 03 and 04. ksr 10-03-12 Charles F. Saffle REV SHEET REV C C C C C C C SHEET 15 16 17 18 19 20 21 REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Kenneth Rice DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 ht

4、tp:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING CHECKED BY Rajesh Pithadia THIS DRAWING IS AVAILABLE FOR USE BY All DEPARTMENTS APPROVED BY Raymond Monnin MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K x 8-BIT, RADIATION-HARDENED, LOW VOLTAGE SRAM, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF

5、DEFENSE DRAWING APPROVAL DATE 05-02-28 AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-05208 SHEET 1 OF 21 DSCC FORM 2233 APR 97 5962-E218-10 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-05208 DEFENS

6、E SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines an

7、d lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN shall be as shown in the following example: 5962 R 05208 01 Q X C Federal RHA Device Device Case L

8、ead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-PRF-38535 specified RHA levels and are marked with the appropri

9、ate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535 appendix A specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device types. The device types shall identify the circuit function as follows: Device typ

10、e Generic number 1/ Circuit function Access time 01 AT60142FT 512K X 8-bit rad-hard (5 V tolerant) SRAM (MIL Temp) 17 ns 02 AT60142F 512K X 8-bit rad-hard low voltage SRAM (MIL Temp) 15 ns 03 AT60142HT 512K X 8-bit rad-hard (5 V tolerant) SRAM (MIL Temp) 17 ns 04 AT60142H 512K X 8-bit rad-hard low v

11、oltage SRAM (MIL Temp) 15 ns 1.2.3 Device class designator. The device class designator shall be a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class

12、 level B microcircuits in accordance with MIL-PRF-38535, appendix A Q, V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) shall be as designated in MIL-STD-1835 and as follows: Outline letter 2/ Descriptive designator Terminals Package style X See figure 1

13、36 Flat pack Y See figure 1 36 Flat pack 1.2.5 Lead finish. The lead finish shall be as specified in MIL-PRF-38535 for classes Q and V or MIL-PRF-38535, appendix A for device class M. _ 1/ Generic numbers are also listed on the Standard Microcircuit Drawing Source Approval Bulletin at the end of thi

14、s document and will also be listed in QML-38535 and MIL-HDBK-103. 2/ Package lid is not electrically connected to VSSfor package X, and the lid is electrically connected to VSSfor package Y . Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD M

15、ICROCIRCUIT DRAWING SIZE A 5962-05208 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 3/ 4/ Supply voltage range, (VCC) . -0.5 V dc to +4.6 V dc Voltage range on any input pin (VIN) (devices 01,03) . -0.5 V dc to +

16、7.0 V dc (devices 02,04) -0.5 V dc to +4.6 V dc Voltage range on any output pin , (VOUT)(devices 01,03) . -0.5 V dc to +7.0 V dc (devices 02,04) -0.5 V dc to +4.6 V dc Input current, dc . + 10 mA Power dissipation 0.7 W Operating free-air temperature range, (TA) . -55C to +125C Storage temperature r

17、ange, (TSTG) -65C to +150C Junction temperature, (TJ) +175C Thermal resistance, junction-to-case, (JC): Case X and Y . +3C/W 1.4 Recommended operating conditions. Supply voltage range, (VCC) . +3.0 V dc to +3.6 V dc Supply voltage, (VSS) . 0 V dc High level input voltage range (VIH) (devices 01,03)

18、2.2 V dc to 5.5 V dc High level input voltage range (VIH) (devices 02,04) 2.2 V dc to VCC+0.3 V dc Low level input voltage range (VIL) . -0.3 V dc to 0.8 V dc Operating free-air temperature, (TA) . -55C to +125C 1.5 Radiation features Maximum total dose available (dose rate = 0.1 rads(Si)/s) 100 x 1

19、03 rads(Si) Single event phenomenon (SEP) effective linear energy threshold (LET) with no upsets 1 MeV-cm2/mg with no latch-up . 80 MeV-cm2/mg 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this dra

20、wing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-8

21、83 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http

22、s:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) _ 3/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performan

23、ce and affect reliability. 4/ All voltage values in this drawing are with respect to VSS. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-05208 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISIO

24、N LEVEL C SHEET 4 DSCC FORM 2234 APR 97 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation. AMERICAN SOCIETY FOR TEST

25、ING AND MATERIALS (ASTM) ASTM Standard F1192 - Standard Guide for the Measurement of Single Event Phenomena from Heavy Ion Irradiation of Semiconductor Devices. (Applications for copies of ASTM publications should be addressed to: ASTM International, PO Box C700, 100 Barr Harbor Drive, West Conshoho

26、cken, PA 19428-2959; http:/www.astm.org.) ELECTRONICS INDUSTRIES ASSOCIATION (EIA) JEDEC Standard EIA/JESD78 - IC Latch-Up Test. (Applications for copies should be addressed to the Electronics Industries Association, 2500 Wilson Boulevard, Arlington, VA 22201; http:/www.jedec.org.) (Non-Government s

27、tandards and other publications are normally available from the organizations that prepare or distribute the documents. These documents also may be available in or through libraries or other informational services.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing

28、 and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V

29、 shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in

30、 accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, ap

31、pendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Truth table. The truth table shall be as specified on figure 3. 3.2.4 Outp

32、ut load circuit. The output load circuit shall be as specified on figure 4. 3.2.5 Timing waveforms. The timing waveforms shall be as specified on figure 5. 3.2.6 Radiation test circuit. The radiation test circuit shall be as specified on figure 6. 3.2.7 Functional tests. Various functional tests use

33、d to test this device are contained in the appendix (herein). If the test patterns cannot be implemented due to test equipment limitations, alternate test patterns to accomplish the same results shall be allowed. For device class M, alternate test patterns shall be maintained under document revision

34、 level control by the manufacturer and shall be made available to the preparing or aquiring activity upon request. For device classes Q and V, alternate test patterns shall be under the control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be ma

35、de available to the preparing or aquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall a

36、pply over the full case operating temperature range. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-05208 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR

37、97 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be

38、marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be

39、 in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M sha

40、ll be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certifi

41、cate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers

42、product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device

43、class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for

44、 any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshor

45、e at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 41 (see MIL-PRF-38535, appendix A). 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspe

46、ction procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in acco

47、rdance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method

48、5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Delete the sequence specified as initial (preburn-in) electrical parameters through interim (postburn-in) electrical parameters of method 5004 and substitute lines 1 through 6 of table IIA herein. b. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test