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本文(DLA SMD-5962-05211 REV C-2012 MICROCIRCUIT DIGITAL RADIATION HARDENED LOW VOLTAGE CMOS 16-BIT D-TYPE LATCH WITH BUS HOLD SERIES OUTPUT RESISTORS AND THREE-STATE OUTPUTS MONOLITHIC .pdf)为本站会员(outsidejudge265)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-05211 REV C-2012 MICROCIRCUIT DIGITAL RADIATION HARDENED LOW VOLTAGE CMOS 16-BIT D-TYPE LATCH WITH BUS HOLD SERIES OUTPUT RESISTORS AND THREE-STATE OUTPUTS MONOLITHIC .pdf

1、REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add device type 02. Correct DC input voltage range (VIN) in section 1.3. - TVN 06-06-07 Thomas M. Hess B Change Radiation Hardness Assurance (RHA) level to F. - TVN 07-02-09 Thomas M. Hess C Update radiation features in section 1.5 and add SEP tes

2、t table IB. Update boilerplate paragraphs to the current requirements of MIL-PRF-38535. - MAA 12-02-16 Thomas M. Hess REV SHEET REV C C C C C C C SHEET 15 16 17 18 19 20 21 REV STATUS OF SHEETS REV C C C C C C C C C C C C C C SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Thanh V. Nguye

3、n DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A CHECKED BY Thanh V. Nguyen APPROVED BY Thomas M. Hess MICROCIRCUIT, DIGITAL, RADIA

4、TION HARDENED, LOW VOLTAGE CMOS, 16-BIT D-TYPE LATCH WITH BUS HOLD, SERIES OUTPUT RESISTORS, AND THREE-STATE OUTPUTS, MONOLITHIC SILICON DRAWING APPROVAL DATE 05-05-09 REVISION LEVEL C SIZE A CAGE CODE 67268 5962-05211 SHEET 1 OF 21 DSCC FORM 2233 APR 97 5962-E138-12Provided by IHSNot for ResaleNo r

5、eproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-05211 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of

6、high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PI

7、N. The PIN is as shown in the following example: 5962 F 05211 01 V X A Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and

8、V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.

9、2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54VCXH162373 16-bit D-type latch with bus hold, series output resistors, and three-state outputs 02 54VCXH162373 16-bit D-type latch with bus hold, series output resistors,

10、 and three-state outputs 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B m

11、icrocircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 48 Flat pack 1.2

12、.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS,

13、 OHIO 43218-3990 SIZE A 5962-05211 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +4.6 V dc DC input voltage range (VIN) -0.5 V dc to +4.6 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc DC input/output c

14、lamp current (IIK, IOK) 50 mA DC output current (per pin) (IOUT). 50 mA DC VCCor GND current (per output pin) (ICC, IGND) 100 mA Maximum power dissipation (PD) . 400 mW Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 10 seconds) +260C Thermal resistance, junction-to-cas

15、e (JC) 22C/W Junction temperature (TJ) +150C 4/ 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VCC): Device type 01 . +2.3 V dc to +3.6 V dc Device type 02 . +1.8 V dc to +3.6 V dc Input voltage range (VIN) -0.3 V dc to +3.6 V dc Output voltage range (VOUT) +0.0 V dc to VCCMaximum

16、 high level output current (IOH): VCC= 1.8 V (device type 02) -4 mA VCC= 2.3 V to 2.7 V . -8 mA VCC= 3.0 V to 3.6 V . -12 mA Maximum low level output current (IOL): VCC= 1.8 V (device type 02) +4 mA VCC= 2.3 V to 2.7 V . +8 mA VCC= 3.0 V to 3.6 V . +12 mA Input rise or fall time rate (t/V): VCC= 3.0

17、 V 0 to 10 ns/V Case operating temperature range (TC) -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 50 300 rad(Si)/s): For device types 01 and 02 300 krads(Si) Single Event Effects (SEE) for device types 01 and 02: No Single Event Latch-up (SEL) occurs at effective

18、LET (see 4.4.4.2) . 72 MeV-cm2/mg 5/ No Single Event Upset (SEU) occurs at effective LET (see 4.4.4.2) . 72 MeV-cm2/mg 5/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2

19、/ Unless otherwise noted, all voltages are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C. 4/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in

20、screening conditions in accordance with method 5004 of MIL-STD-883. 5/ Limits are guaranteed by design or process, but not production tested unless specified by the customer through the purchase order or contract. Provided by IHSNot for ResaleNo reproduction or networking permitted without license f

21、rom IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-05211 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part

22、 of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDAR

23、DS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available on

24、line at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise spe

25、cified, the issues of these documents are those cited in the solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of semiconductor Devices. (Copies of these documents are available online

26、at http:/www.astm.org or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this

27、 document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the dev

28、ice manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specifie

29、d herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in acc

30、ordance with 1.2.4 and figure 1 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Truth table. The truth table shall be as specified on figure 3. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 4. 3.2.5 Ground bounce waveform

31、s and test circuit. The ground bounce waveforms and test circuit shall be as specified on figure 5. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-05211 REVISI

32、ON LEVEL C SHEET 5 DSCC FORM 2234 APR 97 3.2.6 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 6. 3.2.7 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level cont

33、rol and shall be made available to the preparing or acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and post irradiation parameter limits are as specified i

34、n table IA and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the P

35、IN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA desig

36、nator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“

37、as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requir

38、ements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to list

39、ing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certific

40、ate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification DLA Land and Marit

41、ime-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritimes agent, and the acquiring activity retain the

42、 option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit gro

43、up number 38 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-05211 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Ele

44、ctrical performance characteristics. Test and MIL-STD-883 test method 1/ Symbol Test conditions 2/ 3/ -55C TC +125C +1.8 V VCC +3.6 V unless otherwise specified Device type and device class VCCGroup A subgroups Limits 4/ Unit Min Max Negative input clamp voltage 3022 VIC-For input under test, IIN= -

45、1.0 mA All Q, V Open 1 -0.4 -1.5 V High level output voltage 3006 VOHVIN= VIHminimum or VILmaximum IOH= -100 A All All 2.7 V 1, 2, 3 2.5 V 3.6 V 1, 2, 3 3.4 IOH= -6 mA 2.3 V 1 1.8 2.7 V 1 2.2 IOH= -8 mA 2.3 V 1, 2, 3 1.7 3.0 V 1 2.4 IOH= -12 mA 3.0 V 1, 2, 3 2.2 IOH= -4 mA 02 All 1.8 V 1 1.4 Low lev

46、el output voltage 3007 VOLVIN= VIHminimum or VILmaximum IOL= 100 A All All 2.7 V 1, 2, 3 0.2 V 3.6 V 1, 2, 3 0.2 IOL= 6 mA 2.3 V 1 0.4 2.7 V 1 0.4 IOL= 8 mA 2.3 V 1, 2, 3 0.6 3.0 V 1 0.55 IOL= 12 mA 3.0 V 1, 2, 3 0.8 IOL= 4 mA 02 All 1.8 V 1 0.3 High level input voltage VIH5/ All All 2.3 V 1, 2, 3 1

47、.6 V 2.7 V 1, 2, 3 2.0 3.0 V 1, 2, 3 2.0 3.6 V 1, 2, 3 2.0 02 All 1.8 V 1, 2, 3 1.2 Low level input voltage VIL5/ All All 2.3 V 1, 2, 3 0.7 V 2.7 V 1, 2, 3 0.8 3.0 V 1, 2, 3 0.8 3.6 V 1, 2, 3 0.8 02 All 1.8 V 1, 2, 3 0.4 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or

48、networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-05211 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics - Continued. Test and MIL-STD-883 test method 1/ Symbol Te

49、st conditions 2/ 3/ -55C TC +125C +1.8 V VCC +3.6 V unless otherwise specified Device type and device class VCCGroup A subgroups Limits 4/ Unit Min Max Input leakage current high 3010 IIHFor input under test, VIN= 3.6 V For all other inputs, VIN= VCCor GND All All 3.6 V 1, 2, 3 5 A Input leakage current low 3009

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