DLA SMD-5962-06250-2006 MICROCIRCUIT DIGITAL BIPOLAR SCHOTTKY TTL MULTIPLE NOR GATES MONOLITHIC SILICON《硅单片多路无栅的混合微型电路 肖特基双极TTL数字微型电路》.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED REV SHET REV SHET REV STATUS REV OF SHEETS SHEET PMIC N/A PREPARED BY Greg A. Pitz DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Joseph D. Rodenbeck COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABL

2、E FOR USE BY ALL DEPARTMENTS APPROVED BY Raymond Monnin MICROCIRCUIT, DIGITAL, BIPOLAR SCHOTTKY TTL, MULTIPLE NOR GATES, AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 06-10-10 MONOLITHIC SILICON AMSC N/A REVISION LEVEL SIZE A CAGE CODE 67268 5962-06250 SHEET 1 OF 10 DSCC FORM 2233

3、APR 97 5962-E562-06 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-06250 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing

4、 documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Har

5、dness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 06250 01 V C X Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) /

6、 Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriat

7、e RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54S02 Quadruple 2-input positive NOR gate 1.2.3 Device class designator. The device class designator is a single

8、letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification

9、 to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes

10、 Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-06250 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 3 DSCC FORM 2234 A

11、PR 97 1.3 Absolute maximum ratings. 1/ Supply voltage range -0.5 V dc to 7.0 V dc Input voltage range -1.2 V dc at -18 mA to 5.5 V dc Storage temperature range -65C to +150C Maximum power dissipation per gate (PD) 2/ 62 mW dc Lead temperature (soldering 10 seconds) +300C Thermal resistance, junction

12、-to-case (JC) (See MIL-STD-1835) Junction temperature (TJ) 3/ 175C 1.4 Recommended operating conditions. Supply voltage (VCC) 4.5 V dc minimum to 5.5 V dc maximum Minimum high level input voltage (VIH) . 2.0 V dc Maximum low level input voltage (VIL) 0.8 V dc 4/ Normalized fanout (each output) 5/ 10

13、 maximum Case operating temperature range (TC). -55C to 125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of the

14、se documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electro

15、nic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or www.dodssp.daps.mil or from the Standardizat

16、ion Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes appli

17、cable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Must withstand the added PDdue to short circ

18、uit condition (e.g. IOS) at one output for 5 seconds duration. 3/ Maximum junction temperature should not be exceeded except in accordance with allowable short duration burn-in screening condition in accordance with MIL-PRF-38535. 4/ VIL= 0.7 V dc at +125C. 5/ Device will fanout in both high and low

19、 levels to the specified number of data inputs of the same device type as that being tested. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-06250 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVI

20、SION LEVEL SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in t

21、he QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The desi

22、gn, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections logic dia

23、gram(s). The terminal connections and logic diagram(s) shall be as specified on figure 1. 3.2.3 Truth table and logic equation. The truth table and logic equation shall be as specified on figure 2. 3.2.4 Switching time test circuit and waveforms. The switching time test circuit and waveforms shall b

24、e as specified on figure 3. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating tem

25、perature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN

26、may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q an

27、d V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device

28、 class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class

29、M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the ma

30、nufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or

31、 for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is

32、required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made avai

33、lable onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 8 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without lic

34、ense from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-06250 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Limits 1/ Test Symbol Test conditions -55C TC +125C unless otherwise specified Grou

35、p A subgroups Min Max Unit High-level output voltage VOHVCC= 4.5 V; VIN= 0.8 V; IOH= -1 mA 2/ 1, 2, 3 2.5 V Low-level output voltage VOLVCC= 4.5 V; VIN= 2.0 V; IOL= 20 mA 3/ 4/ 1, 2, 3 0.5 V Input clamp voltage VICVCC= 4.5 V; IIN= -18 mA 1, 2, 3 -1.2 V High-level input current IIH1 VCC= 5.5 V; VIN=

36、2.7 V 1, 2, 3 50 A IIH2 VCC= 5.5 V; VIN= 5.5 V 1, 2, 3 1.0 mA Low-level input current IILVCC= 5.5 V; VIN= 0.5 V 1/ 1, 2, 3 -2.0 mA Short-circuit output current IOSVCC= 5.5 V; VIN= 0 V 5/ 1, 2, 3 -40 -100 mA High-level supply current ICCHVCC= 5.5 V; VIN= 0 V 1, 2, 3 29 mA Low-level supply current ICC

37、LVCC= 5.5 V 6/ 1, 2, 3 45 mA Functional test 4/ VIN= VIHMin or VILMax Verify output VO, See 4.4.1b 7, 8 Propagation delay time, high-to-low level tPHL CL= 50 pF; RL= 280 ; VCC= 5.0 V 9, 10, 11 9.0 ns Propagation delay time, low-to-high level tPLHCL= 50 pF; RL= 280 ; VCC= 5.0 V 9, 10, 11 9.0 ns 1/ Al

38、l unspecified inputs at 5.5 V. 2/ VIN= 0.7 V at +125C. 3/ All unspecified inputs grounded. 4/ VOL= 0.45 V at +125C. 5/ Not more than one output should be shorted at a time. 6/ One input at 4.5 V, the other at GND. Provided by IHSNot for ResaleNo reproduction or networking permitted without license f

39、rom IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-06250 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 6 DSCC FORM 2234 APR 97 FIGURE 1. Terminal connections. Truth table (each gate) Inputs Output A B Y H X L X H L L L H X = Irrelevant Positive logic: Y = BA + Figu

40、re 2. Truth table and logic equation. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-06250 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 7 DSCC FORM 2234 APR 97 NOTES: 1/ Puls

41、e generator has the following characteristics: t1= t0 2.5 ns, tP= 200 ns, and ZOUT 50 . 2/ CL= 50 pF minimum including scope probe, wiring, and stray capacitance, without package in test fixture. 3/ Voltage measurements are to be made with respect to network ground terminal. 4/ All diodes are 1N3064

42、 or equivalent. FIGURE 3. Switching time test circuit and waveforms. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-06250 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 8 DSCC

43、FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, f

44、it, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualificat

45、ion and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (

46、1) Test condition A, B, C or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applic

47、able, in accordance with the intent specified in method 1015. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or

48、approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-