DLA SMD-5962-07218 REV B-2009 MICROCIRCUIT LINEAR RADIATION HARDENED ULTRA HIGH FREQUENCY NPN-PNP COMBINATION TRANSISTOR ARRAY MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add device types 02 and 03. Make change to the NPN and PNP characteristics hFEtests as specified under Table I. Delete NPN and PNP characteristics ICEOand ICBOtests as specified under Table I. - ro 08-04-08 R. HEBER B Add case outline X. Make cha

2、nges to 1.2.4, 1.3, and Figure 1. - ro 09-03-17 R. HEBER REV SHET REV B B B B B B B B SHEET 15 16 17 18 19 20 21 22 REV STATUS REV B B B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER CHECKED BY RAJESH PITHADIA DEFENSE SUPPLY CENTER COLUMBUS

3、COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil APPROVED BY ROBERT M. HEBER STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 07-04-17 MICROCIRCUIT, LINEAR, RADIATION HARDENED, ULTRA HIGH FREQUENCY, NPN

4、-PNP COMBINATION TRANSISTOR ARRAY, MONOLITHIC SILICON AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-07218 SHEET 1 OF 22 DSCC FORM 2233 APR 97 5962-E212-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 59

5、62-07218 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of c

6、ase outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 F 07218 01 V E A Federal stock class des

7、ignator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropr

8、iate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Gen

9、eric number Circuit function 01 ISL73096RH Radiation hardened, dielectrically isolated, ultra high frequency all NPN PNP combination transistor array 02 ISL73127RH Radiation hardened, dielectrically isolated, ultra high frequency all NPN transistor array 03 ISL73128RH Radiation hardened, dielectrica

10、lly isolated, ultra high frequency all PNP transistor array 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883

11、 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package st

12、yle E CDIP2-T16 16 Dual-in-line X CDFP4-16 16 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-ST

13、ANDARD MICROCIRCUIT DRAWING SIZE A 5962-07218 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Collector to emitter voltage (open base) : Device types 01, 02 (NPN characteristics) . +8 V Device types 01, 03 (PNP

14、characteristics) . -8 V Collector to base voltage (open emitter) : Device types 01, 02 (NPN characteristics) . +12 V Device types 01, 03 (PNP characteristics) . -10 V Emitter to base voltage (reverse bias) : Device types 01, 02 (NPN characteristics) . +5.5 V Device types 01, 03 (PNP characteristics)

15、 . -4.5 V Collector current at 100% duty cycle, +175C . 11.3 mA Maximum power dissipation (PD) : Case outline E 555 mW Case outline X : At +25C . 1.25 W At +125C . 0.41 W Junction temperature (TJ) . +175C Storage temperature range . -65C TA +150C Lead temperature (soldering, 10 seconds) +265C Therma

16、l resistance, junction-to-case (JC) : Case outline E See MIL-STD-1835 Case outline X 28C/W Thermal resistance, junction-to-ambient (JA) : Case outline E 90C/W Case outline X 120C/W 1.4 Recommended operating conditions. Ambient operating temperature range (TA) . -55C TA +125C 1.5 Radiation features.

17、Maximum total dose available (dose rate = 50 - 300 rads (Si)/s) 300 Krads (Si) 2/ _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ These parts may be dose rate sensiti

18、ve in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A. Provided by IHSNot for ResaleNo reproduction or networking permitted without

19、 license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-07218 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and ha

20、ndbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT

21、 OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documen

22、ts are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the

23、text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-3

24、8535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, append

25、ix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-385

26、35 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Radiation exposure circu

27、it. The radiation exposure circuit shall be as specified on figure 2. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and sh

28、all apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.

29、2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall sti

30、ll be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in

31、MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-07218 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OH

32、IO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TA+125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max NPN characteristics V(BR)CBOIC= 100 A, IE= 0 1,2,3 01, 02 12 V Collector to b

33、ase breakdown voltage M,D,P,L,R,F 1/ 2/ 1 12 V(BR)CEOIC= 100 A, IB= 0 1,2,3 01, 02 8 V Collector to emitter breakdown voltage M,D,P,L,R,F 1/ 2/ 1 8 Collector to emitter breakdown voltage V(BR)CESIC= 100 A, base shorted to emitter 1,2,3 01, 02 10 V M,D,P,L,R,F 1/ 2/ 1 10 V(BR)EBOIE= 10 A, IC= 0 1,2,3

34、 01, 02 5.5 V Emitter to base breakdown voltage M,D,P,L,R,F 1/ 2/ 1 5.5 VCE(SAT)IC= 10 mA, IB= 1 mA 1,2,3 01, 02 0.5 V Collector to emitter saturation voltage M,D,P,L,R,F 1/ 2/ 1 0.5 Base to emitter voltage VBEIC= 10 mA 1 01, 02 0.95 V 2,3 1.05 M,D,P,L,R,F 1/ 2/ 1 1.05 hFEIC= 10 mA, VCE= 2 V 1 01, 0

35、2 80 DC forward current transfer ratio 2,3 40 M,D,P,L,R,F 1/ 2/ 1 40 Early voltage VAIC= 1 mA, VCE= 3.5 V 1,2,3 01, 02 20 V M,D,P,L,R,F 1/ 2/ 1 20 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DR

36、AWING SIZE A 5962-07218 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions -55C TA+125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max

37、PNP characteristics V(BR)CBOIC= -100 A, IE= 0 1,2,3 01, 03 10 V Collector to base breakdown voltage M,D,P,L,R,F 1/ 2/ 1 10 V(BR)CEOIC= -100 A, IB= 0 1,2,3 01, 03 8 V Collector to emitter breakdown voltage M,D,P,L,R,F 1/ 2/ 1 8 Collector to emitter breakdown voltage V(BR)CESIC= -100 A, base shorted t

38、o emitter 1,2,3 01, 03 10 V M,D,P,L,R,F 1/ 2/ 1 10 V(BR)EBOIE= -10 A, IC= 0 1,2,3 01, 03 4.5 V Emitter to base breakdown voltage M,D,P,L,R,F 1/ 2/ 1 4.5 VCE(SAT)IC= -10 mA, IB= -1 mA 1,2,3 01, 03 0.5 V Collector to emitter saturation voltage M,D,P,L,R,F 1/ 2/ 1 0.5 Base to emitter voltage VBEIC= -10

39、 mA 1 01, 03 0.95 V 2,3 1.05 M,D,P,L,R,F 1/ 2/ 1 1.05 hFEIC= -10 mA, VCE= -2 V 1 01, 03 40 DC forward current transfer ratio 2,3 20 M,D,P,L,R,F 1/ 2/ 1 20 Early voltage VAIC= -1 mA, VCE= -3.5 V 1,2,3 01, 03 10 V M,D,P,L,R,F 1/ 2/ 1 10 1/ Devices supplied to this drawing have been characterized throu

40、gh all levels M, D, P, L, R, and F of irradiation. However, this device is only tested at the “F” level. Pre and Post irradiation values are identical unless otherwise specified in Table I. When performing post irradiation electrical measurements for any RHA level, TA= +25C. 2/ These parts may be do

41、se rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A. Provided by IHSNot for ResaleNo reproduction or networking pe

42、rmitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-07218 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 Device types 01 02 and 03 Case outlines E and X Terminal number Terminal symbol 1 Q1 base Q1 collector 2 Q1 emi

43、tter Q2 collector 3 Q1 collector Q2 emitter 4 Q2 emitter Q2 base 5 Q2 base NC 6 Q2 collector Q3 collector 7 Q3 emitter Q3 emitter 8 Q3 base Q3 base 9 Q3 collector Q4 base 10 Q4 emitter Q4 emitter 11 Q4 base Q4 collector 12 Q4 collector Q5 collector 13 Q5 emitter Q5 emitter 14 Q5 base Q5 base 15 Q5 c

44、ollector Q1 base 16 NC Q1 emitter NC = No connection FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-07218 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEV

45、EL B SHEET 8 DSCC FORM 2234 APR 97 Device type 01 NOTES: V1 = 5.5 V 0.5 V V2 = 10.5 V 0.5 V V3 = -5.5 V 0.5 V V4 = -10.5 V 0.5 R1, R2, R3, R4 and R5 = 1 k 5 % R6, R7, R8, R9 and R10 = 100 5 % C1 through C10 = 0.01 F per socket, Breakdown voltage (BV) rating 25 V FIGURE 2. Radiation exposure circuit.

46、 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-07218 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 9 DSCC FORM 2234 APR 97 Device type 02 NOTES: V1 = 5.5 V 0.5 V V2 = 10.5

47、V 0.5 V R1, R2, R3, R4 and R5 = 1 k 5 % R6, R7, R8, R9 and R10 = 100 5 % C1 through C10 = 0.01 F per socket, Breakdown voltage (BV) rating 25 V FIGURE 2. Radiation exposure circuit continued. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD M

48、ICROCIRCUIT DRAWING SIZE A 5962-07218 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 10 DSCC FORM 2234 APR 97 Device type 03 NOTES: V1 = -5.5 V 0.5 V V2 = -10.5 V 0.5 V R1, R2, R3, R4 and R5 = 1 k 5 % R6, R7, R8, R9 and R10 = 100 5 % C1 through C10 = 0.01 F per socket, Breakdown voltage (BV) rating 25 V FIGURE 2. Radiation exposure circuit continued. Provided by IHSNot for ResaleNo reproduction or networking