DLA SMD-5962-07222 REV B-2013 MICROCIRCUIT LINEAR WIDEBAND DIFFERENTIAL OPERATIONAL AMPLIFIER MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Change table IIB to have a higher VIO delta limit for life test than for burn-in. rrp 07-12-10 R. HEBER B Make correction to the continuous power dissipation under paragraph 1.3, delete TA= +85C and substitute TA= +125C. Delete device class M req

2、uirements. Update paragraphs to current MIL-PRF-38535 requirements. - ro 13-03-28 C. SAFFLE REV SHEET REV SHEET REV STATUS REV B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 PMIC N/A PREPARED BY Rajesh Pithadia DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil ST

3、ANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY Rajesh Pithadia APPROVED BY Robert M. Heber MICROCIRCUIT, LINEAR, WIDEBAND, DIFFERENTIAL OPERATIONAL AMPLIFIER, MONOLITHIC SILICON DRAWING APPROVAL DATE 07-09-18 AMSC

4、 N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-07222 SHEET 1 OF 9 DSCC FORM 2233 APR 97 5962-E324-13 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-07222 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 RE

5、VISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part o

6、r Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 07222 01 V F A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class desig

7、nator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device ty

8、pe(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 THS4511M Wideband, differential operational amplifier 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: D

9、evice class Device requirements documentation Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style F GDFP2-F16 or CDFP3-F16 16 Flat pack 1.2.5

10、 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-07222 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL

11、B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (VS-to VS+) . 6 V Input voltage (VI) . VSDifferential input voltage (VID) . 4 V Output current (IO) . 200 mA Continuous power dissipation: TA 25C 661 mW TA= 125C 132 mW Maximum junction temperature (TJ) +150C 2/ Storage

12、temperature range (TSTG) . -65C to +150C Thermal resistance, junction-to-ambient (JA) . 189C/W Thermal resistance, junction-to-case (JC) 14.7C/W 1.4 Recommended operating conditions. Operating free-air temperature range (TA) -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standar

13、ds, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrat

14、ed Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HD

15、BK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between t

16、he text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage

17、to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ The absolute maximum temperature under any condition is limited by the constraints of the silicon process. Provided by IHSNot for ResaleNo reproduction or networking permitted without license f

18、rom IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-07222 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 as s

19、pecified herein, or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as

20、specified in MIL-PRF-38535 and herein for device classes Q and V. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.3 Electrical performance characteristics and postirradiation para

21、meter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be

22、the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible

23、 due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. 3.5.1 Certification/compliance mark. The cer

24、tification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6

25、.6.1 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein. 3.7 Certificate of conforma

26、nce. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall be provided with each lot of microcircuits delivered to this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A

27、 5962-07222 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max DC performance Input offset

28、 voltage VIO1 01 4 mV 2, 3 5.5 Input bias current IIB1 01 15.5 A 2, 3 20 Input offset current IIO1 01 3.6 A 2, 3 7 Output Maximum output voltage high VOHEach output with 100 to mid-supply 1 01 3.7 V 2, 3 3.5 Minimum output voltage low VOLEach output with 100 to mid-supply 1 01 1.3 V 2, 3 1.5 Differe

29、ntial output voltage swing VOD1 01 4.8 V 2, 3 4.0 Power supply Operating voltage range VS+- VS-1, 2, 3 01 3.75 5.25 V Maximum quiescent current IQ1 01 42.5 mA 2, 3 44 Minimum quiescent current IQ1 01 35.9 mA 2, 3 34 Powerdown Powerdown quiescent current IQ-PD1 01 0.9 mA 2, 3 1.2 1/ Unless otherwise

30、specified, VS+= 5 V, VS-= 0 V, G = 14 dB, CM = open, VO= 2 VPP, RF= 349 , RL= 200 differential, TA= +25C, single-ended input, differential output, input referenced to ground, and output referenced to mid-supply. Provided by IHSNot for ResaleNo reproduction or networking permitted without license fro

31、m IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-07222 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 Device type 01 Case outline F Terminal number Terminal symbol 1 VS-2 VS-3 NC 4 VIN-5 VOUT+6 CM 7 VS+8 VS+9 VS+10 VS+11 CM 12 VOUT-13 VIN+14 PD 15 V

32、S-16 VS-Terminal Description NC No internal connection VIN-Inverting amplifier input VOUT+Non-inverting amplifier output CM Common-mode voltage input VS+Positive amplifier power supply input VOUT-Inverting amplifier output VIN+Non-inverting amplifier input PD Powerdown, PD = logic low puts part into

33、 low power mode, PD = logic high or open for normal operation VS-Negative amplifier power supply input FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-07222 DLA LAND AND MARITI

34、ME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. T

35、he modification in the QM plan shall not affect the form, fit, or function as described herein. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. 4.2.1 Ad

36、ditional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision l

37、evel control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance wit

38、h the intent specified in method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table IIA herein. c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B. 4.3 Qualification

39、inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4 Conformance i

40、nspection. Technology conformance inspection for classes Q and V shall be in accordance with MIL-PRF-38535 including groups A, B, C, D, and E inspections, and as specified herein. 4.4.1 Group A inspection. a. Tests shall be as specified in table IIA herein. b. Subgroups 4, 5, 6, 7, 8, 9, 10, and 11

41、in table I, method 5005 of MIL-STD-883 shall be omitted. 4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein. 4.4.2.1 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test te

42、mperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The test circuit shall be maintained under document revision level control by the device manufacturers TRB in accordance with MIL-PRF-38535 and shall be made available to t

43、he acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-STD-883. 4.4.3 Group D inspection. The group D inspection end-point electrical parameters s

44、hall be as specified in table IIA herein. 4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). a. End-point electrical parameters shall be as specified in table IIA herein. b. For device classes Q and V, the dev

45、ices or test vehicle shall be subjected to radiation hardness assured tests as specified in MIL-PRF-38535 for the RHA level being tested. All device classes must meet the postirradiation end-point electrical parameter limits as defined in table I at TA= +25C 5C, after exposure, to the subgroups spec

46、ified in table IIA herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-07222 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 8 DSCC FORM 2234 APR 97 TABLE IIA. Electrical test requi

47、rements. Test requirements Subgroups (in accordance with MIL-PRF-38535, table III) Device class Q Device class V Interim electrical parameters (see 4.2) - - Final electrical parameters (see 4.2) 1, 2, 3 1/ 1, 2, 3 1/ 2/ Group A test requirements (see 4.4) 1, 2, 3 1, 2, 3 Group C end-point electrical

48、 parameters (see 4.4) 1 1 2/ Group D end-point electrical parameters (see 4.4) 1 1 Group E end-point electrical parameters (see 4.4) - - 1/ PDA applies to subgroup 1. 2/ Delta limits as specified in table IIB shall be required where specified, and the delta limits shall be computed with reference to the zero hour electrical parameters. TABLE IIB. Burn-in and operating life test delta parameters. TA= +25C. Parameters Burn-in delta limits Life test delta limits VIO0.4 mV 1 mV IIB2 A 2 A IQ0.5 mA 0.5 mA 5. PACKAGING 5.1