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本文(DLA SMD-5962-07229 REV B-2011 MICROCIRCUIT LINEAR HIGH VOLTAGE ADJUSTABLE POSITIVE VOLTAGE REGULATOR MONOLITHIC SILICON.pdf)为本站会员(priceawful190)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-07229 REV B-2011 MICROCIRCUIT LINEAR HIGH VOLTAGE ADJUSTABLE POSITIVE VOLTAGE REGULATOR MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add paragraph 3.1.1 and die Appendix A. - ro 08-09-17 R. HEBER B Add device types 02 and 62. Make change to paragraphs 1.2.2, 1.2.4, 1.3, and 1.5. Make changes to Table I and figure 2. Make change to Table IIB and paragraph 4.4.4.1. -rrp 11-11-21

2、 C. SAFFLE REV SHEET REV B B B B B B B B B SHEET 15 16 17 18 19 20 21 22 23 REV STATUS REV B B B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCI

3、RCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY ROBERT M. HEBER MICROCIRCUIT, LINEAR, HIGH VOLTAGE, ADJUSTABLE, POSITIVE VOLTAGE REGULATOR, MONOLITHIC SILICON DRAWING APPROVAL DATE 08-02-25 AMSC N/A R

4、EVISION LEVEL B SIZE A CAGE CODE 67268 5962-07229 SHEET 1 OF 23 DSCC FORM 2233 APR 97 5962-E011-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-07229 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISIO

5、N LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Par

6、t or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 07229 01 V X A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class de

7、signator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-

8、38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type 1/ Generic number Circuit function 01 LM117HVH, WG 0.5 A, high voltage, adj

9、ustable, positive voltage regulator 02 LM117HVGW 0.5 A, high voltage, adjustable, positive voltage regulator 61 LM117HVH, WG Radiation hardened, 0.5 A, high voltage, adjustable, positive voltage regulator 62 LM117HVGW Radiation hardened, 0.5 A, high voltage, adjustable, positive voltage regulator 03

10、 LM117HVK 1.5 A, high voltage, adjustable, positive voltage regulator 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for M

11、IL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals

12、Package style X See figure 1 3 TO-39 can Y MBFM1-P2 2 TO-3 flange mount Z 1/ GDFP1-G16 16 Flat pack with gullwing leads 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1/ For case outline Z, package mater

13、ial for device types 01 and 61 is aluminum nitride and package material for device types 02 and 62 is aluminum oxide. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-07229 DLA LAND AND MARITIME COLUMBUS, OHIO

14、 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 2/ Input output voltage differential . +60 V, -0.3 V Power dissipation (PD) is internally limited: 3/ Case X 2 W Case Y 20 W Case Z 2 W Maximum junction temperature (TJmax) . +150C Storage temperature range -65C

15、 TA +150C Lead temperature (soldering, 10 seconds) . +300C Electrostatic discharge (ESD) 2000 V 4/ Design load current: Case X 0.5 A Case Y 1.5 A Case Z 0.5 A Thermal resistance, junction-to-case (JC): Case X 21C/W Case Y 1.9C/W Case Z (Device types 01 and 61) 3.4C/W 1/ 5/ Case Z (Device types 02 an

16、d 62) 7C/W 1/ Thermal resistance, junction-to-ambient (JA): Case X 186C/W, still air 64C/W, 500 linear feet per minute air flow Case Y 39C/W, still air 14C/W, 500 linear feet per minute air flow Case Z (Device types 01 and 61) 115C/W, still air 66C/W, 500 linear feet per minute air flow 1/ 6/ Case Z

17、 (Device types 02 and 62) 130C/W, still air 80C/W, 500 linear feet per minute air flow 1/ 6/ 1.4 Recommended operating conditions. Ambient operating temperature range (TA) -55C TA +125C _ 2/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at th

18、e maximum levels may degrade performance and affect reliability. 3/ The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax(maximum junction temperature), JA(package junction to ambient thermal resistance), and TA(ambient temperature). The maximum allowable po

19、wer dissipation at any temperature is PD= ( TJmax TA) / JAor the number given in the absolute maximum ratings, whichever is lower. 4/ Human body model (HBM), 1.5 k in series with 100 pF. 5/ The package material for these devices allows much improved heat transfer over our standard ceramic packages.

20、In order to take full advantage of this improved heat transfer, heat sinking must be provided between the package base (directly beneath the die), and either metal traces on, or thermal vias through, the printed circuit board. Without this additional heat sinking, device power dissipation must be ca

21、lculated using JA, rather than JC, thermal resistance. It must not be assumed that the device leads will provide substantial heat transfer out the package, since the thermal resistance of the lead frame material is very poor, relative to the material of the package base. The stated JCthermal resista

22、nce is for the package material only, and does not account for the additional thermal resistance between the package base and the printed circuit board. The user must determine the value of the additional thermal resistance and must combine this with the stated value for the package, to calculate th

23、e total allowed dissipation for the device. 6/ For the case Z device to function properly, the “Output” and “Output/Sense” pins must be connected on the users printed circuit board. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUI

24、T DRAWING SIZE A 5962-07229 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 1.5 Radiation features. 7/ Maximum total dose available (dose rate = 50 300 rads(Si)/s): Device class V (device types 01 and 02) 100 krads(Si) Maximum total dose available (dose

25、 rate = 10 mrads(Si)/s): Device class V (device types 61 and 62) 100 krads(Si) The manufacturer supplying RHA parts on this drawing has performed a characterization test to demonstrate if the parts exhibit enhanced low dose rate sensitivity (ELDRS) according to MIL-STD-883 method 1019 paragraph 3.13

26、.11. These parts have been characterized as being (ELDRS) sensitive. The characterization test demonstrated that the parts did pass the radiation end point parameter limits under low dose rate conditions. Therefore, this part may be considered qualified for space use even though it is ELDRS because

27、it is tested at low dose rate according to MIL-STD-883, method 1019. The manufacturer will continue to perform low dose rate lot acceptance testing on each wafer lot or wafer according to method 1019 of MIL-STD-883. 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The

28、following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufactur

29、ing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Micro

30、circuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this dr

31、awing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 7/ Device types 01 and 02 have been tested and do demonstrate enhanced low dose rate effect

32、s. Radiation end point limits for the noted parameters are guaranteed at the high dose rate only for the conditions specified in MIL-STD-883, method 1019, condition A. Device types 61 and 62 have been tested and do demonstrate enhanced low dose rate effects. Radiation end point limits for the noted

33、parameters are guaranteed for the conditions specified in MIL-STD-883, method 1019, condition E to the radiation specification level with a parameter delta design margin (PDDM) of 2. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCU

34、IT DRAWING SIZE A 5962-07229 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified

35、 in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and

36、as specified herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or

37、 MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Radiation exposure circuit. The radiation exposure cir

38、cuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical perf

39、ormance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each

40、subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not ma

41、rking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance

42、 mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall

43、be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein).

44、The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of

45、 MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification

46、of change for device class M. For device class M, notification to DLA Land and Maritime -VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA L

47、and and Maritime, DLA Land and Maritimes agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device

48、 class M. Device class M devices covered by this drawing shall be in microcircuit group number 52 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-07229 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ 3/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Adjustment pin current IADJVDiff= 3 V

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