DLA SMD-5962-07237 REV A-2009 MICROCIRCUIT MEMORY DIGITAL CMOS 1M x 4-BIT (4M) STATIC RANDOM ACCESS MEMORY (SRAM) MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Correction to voltage range in Table I condition block, was 3.0 V VCC 3.6 V, change to 4.5 V VCC 5.5 V. Correction to Figure 4 circuit B, 3 V changed to 5 V. ksr 09-03-10 Robert M. Heber REV SHEET REV A A A A A A A SHEET 15 16 17 18 19 20 21 REV

2、STATUS REV A A A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Kenneth Rice STANDARD MICROCIRCUIT DRAWING CHECKED BY Cheri Rida DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY All DEPAR

3、TMENTS APPROVED BY Robert Heber AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 09-02-12 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1M x 4-BIT (4M), STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-07237 SHEET 1 OF 21 DSCC FORM 22

4、33 APR 97 5962-E204-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-07237 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This dr

5、awing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiatio

6、n Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN shall be as shown in the following example: 5962 - 07237 01 M X A | | | | | | | | | | | | | | | | | Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) des

7、ignator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535 appendix A spe

8、cified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device types. The device types shall identify the circuit function as follows: Device type Generic number 1/ Circuit function Data retention Access time 01 1M x 4 CMOS SRAM Yes 12

9、ns 1.2.3 Device class designator. The device class designator shall be a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in

10、accordance with MIL-PRF-38535, appendix A Q, V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) shall be as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 54 SO Flat pack 1.2.5 Lead fi

11、nish. The lead finish shall be as specified in MIL-PRF-38535 for classes Q and V or MIL-PRF-38535, appendix A for device class M. 1/ Generic numbers are listed on the Standard Microcircuit Drawing Source Approval Bulletin at the end of this document and will also be listed in MIL-HDBK-103 (see 6.6.2

12、 herein). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-07237 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 2/ Voltage

13、 on any input relative to VSS- -0.5 V dc to + 6.0 V dc Storage temperature range - -65C to +150C Maximum power dissipation (PD) - 0.54 W Lead temperature (soldering, 10 seconds) - +260C Thermal resistance, junction-to-case (JC): Case X - 7 C/W 3/ Junction temperature (TJ) - +140C 4/ Output current -

14、 20 mA 1.4 Recommended operating conditions. Supply voltage range (VCC) - 4.5 V dc to 5.5 V dc Supply voltage (VSS) - 0 V Input high voltage range (VIH) - 2.0 V dc to VCC+ 0.5 V dc Input low voltage range (VIL) - -0.5 V dc to +0.8 V dc 5/ Case operating temperature range (TC) - -55C to +125C 2. APPL

15、ICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPART

16、MENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDB

17、K-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2

18、 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM Standard F119

19、2-00 - Standard Guide for the Measurement of Single Event Phenomena from Heavy Ion Irradiation of Semiconductor Devices. (Applications for copies of ASTM publications should be addressed to: ASTM International, PO Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959; http:/www.astm.org.

20、) 2/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 3/ Tested initially and after any design or process changes that may affect these parameters. 4/ Maximum junction tempera

21、ture shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883. 5/ VIL(MIN) = -2.0 V dc and VIH(MAX)= VCC +2 V dc for pulse width less than 20 ns. Provided by IHSNot for ResaleNo reproduction or networking permitted without l

22、icense from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-07237 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 ELECTRONICS INDUSTRIES ASSOCIATION (EIA) JEDEC Standard EIA/JESD78 - IC Latch-Up Test. (Applications for copies should be addres

23、sed to the Electronics Industries Association, 2500 Wilson Boulevard, Arlington, VA 22201; http:/www.jedec.org.) (Non-Government standards and other publications are normally available from the organizations that prepare or distribute the documents. These documents also may be available in or throug

24、h libraries or other informational services.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specif

25、ic exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM pla

26、n shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, const

27、ruction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and Figure 1. 3.2.2 Terminal connections. The

28、terminal connections shall be as specified on Figure 2. 3.2.3 Truth table(s). The truth table(s) shall be as specified on Figure 3. 3.2.4 Functional tests. Various functional tests used to test this device are contained in the appendix. If the test patterns cannot be implemented due to test equipmen

29、t limitations, alternate test patterns to accomplish the same results shall be allowed. For device class M, alternate test patterns shall be maintained under document revision level control by the manufacturer and shall be made available to the preparing or acquiring activity upon request. For devic

30、e classes Q and V alternate test patterns shall be under the control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the preparing or acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiat

31、ion parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shal

32、l be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feas

33、ible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in a

34、ccordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of co

35、mpliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be lis

36、ted as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-3853

37、5 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-07237 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REV

38、ISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notifica

39、tion of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent,

40、 and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by thi

41、s drawing shall be in microcircuit group number 41 (see MIL-PRF-38535, appendix A). 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM)

42、 plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-P

43、RF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria

44、 for device class M. a. Delete the sequence specified as initial (preburn-in) electrical parameters through interim (postburn-in) electrical parameters of method 5004 and substitute lines 1 through 6 of table IIA herein. b. The test circuit shall be maintained by the manufacturer under document revi

45、sion level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015. (1) Dynamic burn-in (method 1015 of MIL-STD-88

46、3, test condition D; for circuit, see 4.2.1b herein). c. Interim and final electrical parameters shall be as specified in table IIA herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as sp

47、ecified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the in