DLA SMD-5962-08230 REV A-2009 MICROCIRCUIT DIGITAL-LINEAR BiCMOS RADIATION HARDENED NON-INVERTING QUAD DRIVER MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add a footnote and make clarification changes to SET as specified under 1.5 and Table IB. Add “TC= +25C” to SEL, SEB, and SET as specified under 1.5 - ro 09-10-20 C. SAFFLE REV SHET REV A A A A A A A A A A SHEET 15 16 17 18 19 20 21 22 23 24 REV

2、STATUS REV A A A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY RAJESH PITHADIA COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL

3、DEPARTMENTS APPROVED BY JOSEPH D. RODENBECK MICROCIRCUIT, DIGITAL-LINEAR, BiCMOS, RADIATION HARDENED, NON-INVERTING QUAD DRIVER, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 09-04-01 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-08230 SHEET 1 OF 24 DSCC

4、FORM 2233 APR 97 5962-E508-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-08230 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope.

5、This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of R

6、adiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 D 08230 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (se

7、e 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the

8、appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 ISL7457SRH BiCMOS, radiation hardened, non-inverting quad driver 1.2.3 Device class designator. The dev

9、ice class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or

10、V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X CDFP4-F16 16 Flat pack1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 fo

11、r device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-08230 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET

12、3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage ( +VSto -VS) +18 V Input voltage . -VS- 0.3 V, +VS+ 0.3 V Input current 10 mA Continuous output current . 100 mA Power dissipation (PD) : TA= +25C 1.26 W 2/ TA= +125C 0.25 W 3/ TC= +25C 8.33 W 4/ TC= +125C 1.66 W 5/ Operating ju

13、nction temperature (TJ) . +150C Lead temperature (soldering, 10 seconds) +260C Storage temperature range . -65C to +150C Thermal resistance, junction-to-case (JC) . 15C/W Thermal resistance, junction-to-ambient (JA) 99C/W 6/ 1.4 Recommended operating conditions. Supply voltage ( +VSto -VS) +5 V 10%

14、or +15 V 10% Ambient operating temperature range (TA) . -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 50 300 rads(Si)/s) 10 krads(Si) 7/ Single event phenomenon (SEP) effective linear energy threshold (LET): Single event latchup (SEL) (TC= +25C) 40 MeV/mg/cm28/ Sing

15、le event burnout (SEB) (TC= +25C) . 40 MeV/mg/cm28/ Single event transient (SET) (TC= +25C) (VOUT 15 V, t 500 ns) = 40 MeV/mg/cm28/ 9/ _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect

16、 reliability. 2/ Derate linearly at 10.1 mW/C above TA= +25C. 3/ Derate linearly at 10.1 mW/C above TA= +125C. 4/ Derate linearly at 66.7 mW/C above TC= +25C. 5/ Derate linearly at 66.7 mW/C above TC= +125C. 6/ JAis measured in free air with the component mounted on a high effective thermal conducti

17、vity test board. 7/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method 1019, condition A. 8/ Limits are guarantee

18、d by design or process but, not production tested unless specified by the customer through the purchase order or contract. 9/ SETs of 15 V magnitude and 500 ns duration were experienced for LET = 40 MeV/mg/cm2. SET behavior for LETs other than 40 MeV/mg/cm2were not investigated. Provided by IHSNot f

19、or ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-08230 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and h

20、andbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circui

21、ts, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 -

22、Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a

23、part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation or contract. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM F1192 Standard Guide for the Measurement of Single Event Phenome

24、na (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices. (Copies of this document is available online at http:/www.astm.org/ or from ASTM International, P.O. Box C700, 100 Bar Harbor Drive, West Conshohocken, PA 19428-2959). 2.3 Order of precedence. In the event of a conflict between the

25、text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for de

26、vice classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device

27、 class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, an

28、d physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be

29、as specified on figure 1. 3.2.3 Block diagram. The block diagram shall be as specified on figure 2. 3.2.4 Timing diagram. The timing diagram shall be as specified on figure 3. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAW

30、ING SIZE A 5962-08230 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be as specified on figure 4. 3.2.6 Truth table. The truth table shall be as specified on figure 5. 3.3

31、Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full ambient operating temperature range. 3.4 Electric

32、al test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For pa

33、ckages where marking of the entire SMD PIN is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with M

34、IL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as requir

35、ed in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance sh

36、all be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for de

37、vice classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38

38、535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affe

39、cts this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of th

40、e reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 91 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICRO

41、CIRCUIT DRAWING SIZE A 5962-08230 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ 3/ -55C TA+125C +VS= VH= +5 V 10% Group A subgroups Device type Limits Unit unless

42、otherwise specified Min Max Input section Logic “1” input voltage VIH1,2,3 01 2.0 V M, D 1 2.0Logic “1” input current IIHINx = +VS1,2,3 01 -10 10 A M, D 1 -10 10 Logic “0” input voltage VIL1,2,3 01 0.8 V M, D 1 0.6 Logic “0” input current IILINx = 0 V 1,2,3 01 -10 10 A M, D 1 -10 10 Output section O

43、N resistance VHto OUTx ROHIOUTx= -100 mA, 4,5,6, 01 15 INx = +VSM, D 4 12 ON resistance VLto OUTx ROLIOUTx= +100 mA 4,5,6, 01 12 INx = 0 V M, D 4 7 Positive output leakage current +ILEAKINx = +VS, OUTx = +VS1,2,3 01 10 A OE = 0 V M, D 1 1.2 mA Negative output leakage current -ILEAKINx = +VS, OUTx =

44、-VS1,2,3 01 -10 A OE = 0 V M, D 1 -50 Power supply section +VSsupply current +ISINx = 0 V and +VS1,2,3 01 1.5 mA M, D 1 5 -VSsupply current -ISINx = 0 V and +VS1,2,3 01 -1.5 mA M, D 1 -5 VHsupply current IHINx = 0 V and +VS1,2,3 01 10 A M, D 1 2.2 mA VLsupply current ILINx = 0 V and +VS1,2,3 01 -10

45、A M, D 1 -2.2 mA See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-08230 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 TA

46、BLE IA. Electrical performance characteristics Continued. Test Symbol Conditions 1/ 2/ 3/ -55C TA+125C +VS= VH= +5 V 10% Group A subgroups Device type Limits Unit unless otherwise specified Min Max Switching characteristics section Rise time tRINx = 0 V to 4.5 V step, 9,10,11 01 47 ns CL= 1 nF M, D

47、9 40 Fall time tFINx = 4.5 V to 0 V step, 9,10,11 01 36 ns CL= 1 nF M, D 9 30 tR, tFmismatch tRFCL= 1 nF 9,10,11 01 5 ns M, D 9 Turn on delay time +tDINx = 0 V to 4.5 V step, 9,10,11 01 38 ns CL= 1 nF M, D 9 30 Turn off delay time -tDINx = 4.5 V to 0 V step, 9,10,11 01 40 ns CL= 1 nF M, D 9 40 +tD,

48、-tDmismatch tDDCL= 1 nF 9,10,11 01 4 ns M, D 9 12Enable delay time tENABLEOE = 0 V to 4.5 V step, INx = +VS, RL= 1 k 9,10,11 01 68 ns M, D 9 35Disable delay time tDISABLEOE = 4.5 V to 0 V step, INx = +VS, RL= 1 k 9,10,11 01 70 ns M, D 9 50See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-08230 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION