DLA SMD-5962-09237 REV A-2013 MICROCIRCUIT HYBRID POSITIVE VOLTAGE REGULATOR 7 5 AMPS LOW DROPOUT ADJUSTABLE.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Added radiation hardness assurance requirements. Paragraph 1.4: Corrected Output voltage range from “+1.0 V to +3.3 V“ to “+.985 V to +4.5 V“. Table I: Added test conditions for the Reference voltage, Line regulation, Load regulation, Dropout vol

2、tage, and Ripple rejection tests. Table I: Corrected the min and max limits for the Reference voltage test. Table I: Corrected the min limit for the Ripple rejection ratio test. Table I: Corrected the max limit for the Dropout voltage. -sld 13-06-17 Charles F. Saffle REV SHEET REV A A SHEET 15 16 RE

3、V STATUS REV A A A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Steve L. Duncan DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil/ STANDARD MICROCIRCUIT DRAWING CHECKED BY Greg Cecil THIS DRAWING IS AVAILABLE FOR USE BY A

4、LL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE APPROVED BY Charles F. Saffle MICROCIRCUIT, HYBRID, POSITIVE VOLTAGE REGULATOR, 7.5 AMPS, LOW DROPOUT, ADJUSTABLE DRAWING APPROVAL DATE 12-12-11 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-09237 SHEET 1 OF 16 DSCC FORM 2233 APR 97 59

5、62-E451-13 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-09237 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents five

6、product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected in the PIN. 1.2 PIN. The

7、 PIN shall be as shown in the following example: 5962 R 09237 01 K X X Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 Radiation hardness assurance (RHA) de

8、signator. RHA marked devices shall meet the MIL-PRF-38534 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit functio

9、n 01 VRG8691, VRG8692 Voltage regulator, positive, low dropout, adjustable 1.2.3 Device class designator. This device class designator shall be a single letter identifying the product assurance level. All levels are defined by the requirements of MIL-PRF-38534 and require QML Certification as well a

10、s qualification (Class H, K, and E) or QML Listing (Class G and D). The product assurance levels are as follows: Device class Device performance documentation K Highest reliability class available. This level is intended for use in space applications. H Standard military quality class level. This le

11、vel is intended for use in applications where non-space high reliability devices are required. G Reduced testing version of the standard military quality class. This level uses the Class H screening and In-Process Inspections with a possible limited temperature range, manufacturer specified incoming

12、 flow, and the manufacturer guarantees (but may not test) periodic and conformance inspections (Group A, B, C and D). E Designates devices which are based upon one of the other classes (K, H, or G) with exception(s) taken to the requirements of that class. These exception(s) must be specified in the

13、 device acquisition document; therefore the acquisition document should be reviewed to ensure that the exception(s) taken will not adversely affect system performance. D Manufacturer specified quality class. Quality level is defined by the manufacturers internal, QML certified flow. This product may

14、 have a limited temperature range. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-09237 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). T

15、he case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 12 Thru-Hole Y See figure 1 12 Surface Mount 1.2.5 Lead finish. The lead finish shall be as specified in MIL-PRF-38534. 1.3 Absolute maximum ratings. 1/ V

16、BIAS, VIN. +7.0 V Power. 25 W 2/ Junction temperature (TJ) +150C Thermal resistance, junction-to-case (JC) . 1C/W Lead temperature (soldering, 10 seconds) 300C Storage temperature range -65C to +150C 1.4 Recommended operating conditions. Output voltage range . +.985 V to +4.5 V dc Output current ran

17、ge . 0 to 7.5 A Voltage Bias (VBIAS) range . +3.3 V to +5.5 V dc 3/ Voltage Input (VIN) range . +1.8 V to +5.5 V dc Case operating temperature range (TC) -55C to +125C 1.5 Radiation features. 4/ 5/ Maximum Total Ionizing Dose (TID) (dose rate = 50 - 300 rad(Si)/s) 100 krad(Si) 6 7/ Single event phen

18、omenon (SEP) effective linear energy transfer (LET): No SEL, SEU, or SET. VOUT+ VDROP(MAX) at 5 A, VIN= 4.3V, VRIP= 1 VP-P, VOUT= 3.3V4,5,6 01 80 dB Adjustment pin current 2/ IADJ1,2,3 01 3 A Minimum load current 2/ IMIN1,2,3 01 0 mA Current limit 2/ IMAXPin 8 open 1,2,3 01 9.5 13.5 A Long term stab

19、ility 4/ VOUTTIME1,2,3 01 1 % Supply current (VBIAS) IBIAS1,2,3 01 15 mA 1/ This device was characterized and tested initially using Condition A, Method 1019 of MIL-STD-883 through all levels P, L, R, F and G (500 krad(Si) of irradiation to assure Radiation Hardness Assurance designator level “R” (1

20、00 krad(Si). The device will be re-tested after design or process changes that may affect the RHA response of the device. 2/ This device may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effect. Radiation end-point limits for the noted parameters are guaran

21、teed only for the conditions as specified in MIL-STD-883, method 1019, condition A. 3/ Guaranteed by design. 4/ Not tested. Parameter shall be guaranteed to the specified limits after 1000 hour life test. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,

22、-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-09237 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 TABLE IB. SEP test limits. 1/ Device type SEP Temperature (TC) Effective linear energy transfer (LET) 01 No SEL +125C 86 MeV-cm2/mg 01 No SEU +25C 86 MeV-

23、cm2/mg 01 No SET +25C 86 MeV-cm2/mg 1/ For SEP test conditions, see 4.3.5.1.1.2 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-09237 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A S

24、HEET 8 DSCC FORM 2234 APR 97 Case X. FIGURE 1. Case outline(s). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-09237 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 9 DSCC FORM 2234 AP

25、R 97 Case X - Continued. Symbol Inches Millimeters Min Max Min Max A .220 5.60 b .028 .032 .71 .81 D 1.395 1.405 35.43 35.69 D1 .895 .905 22.73 22.99 e .100 BSC 2.54 BSC e1 .500 BSC 12.70 BSC e2 .200 BSC 5.08 BSC eA 1.285 1.325 32.64 33.66 E .995 1.005 25.27 25.53 F .035 .045 .89 1.14 F1 .245 .255 6

26、.22 6.48 F2 .120 .130 3.05 3.30 F3 .245 .255 6.22 6.48 G1 1.145 1.155 29.08 29.34 G2 .120 .130 3.05 3.30 G3 .745 .755 18.92 19.18 L1 .230 5.84 L2 .150 REF 3.81 REF Q .122 TYP 3.10 TYP p .140 .150 3.56 3.81 R .065 TYP 1.65 TYP NOTES: 1. The U.S. preferred system of measurement is the metric SI. This

27、item was designed using inch-pound units of measurement. In case of problems involving conflicts between the metric and inch-pound units, the inch-pound units shall rule. 2. The package contains a BeO substrate. 3. The case is electrically isolated. FIGURE 1. Case outline(s) - Continued. Provided by

28、 IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-09237 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 10 DSCC FORM 2234 APR 97 Case outline Y. FIGURE 1. Case outline(s) - Continued. Provided by IH

29、SNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-09237 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 11 DSCC FORM 2234 APR 97 Case outline Y - continued. Symbol Inches Millimeters Min Max Min Max A

30、.222 5.64 A1 .010 .020 0.25 0.51 b .028 .032 0.71 0.81 D 1.395 1.405 35.43 35.69 D1 .895 .905 22.73 22.98 e .100 BSC 2.54 BSC e1 .500 BSC 12.70 BSC e2 .200 BSC 5.08 BSC E .995 1.005 25.27 25.53 F .035 .045 .89 1.14 F1 .245 .255 6.22 6.48 F2 .120 .130 3.05 3.30 F3 .245 .255 6.22 6.48 G1 1.145 1.155 2

31、9.08 29.34 G2 .120 .130 3.05 3.30 G3 .745 .755 18.92 19.18 H 1.456 1.496 36.98 38.00 L1 .055 .065 1.40 1.65 L2 .150 REF 3.81 REF p .140 .150 3.56 3.81 Q .122 TYP 3.10 TYP R .065 TYP 1.65 TYP NOTES: 1. The U.S. preferred system of measurement is the metric SI. This item was designed using inch-pound

32、units of measurement. In case of problems involving conflicts between the metric and inch-pound units, the inch-pound units shall rule. 2. The package contains a BeO substrate. 3. The case is electrically isolated. FIGURE 1. Case outline(s) - Continued. Provided by IHSNot for ResaleNo reproduction o

33、r networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-09237 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 12 DSCC FORM 2234 APR 97 Device type 01 Case outlines X and Y Terminal number Terminal symbol 1 2 3 4 5 6 7 8 9 10 11 12 VINVINVI

34、NVBIASENABLE GROUND SLOW_START CURRENT_LIMIT VSENSEVOUTVOUTVOUTFIGURE 2. Terminal connections. FIGURE 3. Block diagram. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-09237 DLA LAND AND MARITIME COLUMBUS, OH

35、IO 43218-3990 REVISION LEVEL A SHEET 13 DSCC FORM 2234 APR 97 TABLE II. Electrical test requirements. MIL-PRF-38534 test requirements Subgroups (in accordance with MIL-PRF-38534, group A test table) Interim electrical parameters 1 Final electrical parameters 1*,2,3 Group A test requirements 1,2,3 Gr

36、oup C end-point electrical parameters 1,2,3 End-point electrical parameters for Radiation Hardness Assurance (RHA) devices 1 * PDA applies to subgroup 1. 4.2 Screening. Screening shall be in accordance with MIL-PRF-38534. The following additional criteria shall apply: a. Burn-in test, method 1015 of

37、 MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to either DLA Land and Maritime -VA or the acquiring activity upon request. Also, the test circuit shall specify the inputs, outp

38、uts, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. (2) TCas specified in accordance with table I of method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table II herein, except inte

39、rim electrical parameter tests prior to burn-in are optional at the discretion of the manufacturer. 4.3 Conformance and periodic inspections. Conformance inspection (CI) and periodic inspection (PI) shall be in accordance with MIL-PRF-38534 and as specified herein. 4.3.1 Group A inspection (CI). Gro

40、up A inspection shall be in accordance with MIL-PRF-38534 and as follows: a. Tests shall be as specified in table II herein. b. Subgroups 4, 5, 6, 7, 8A, 8B, 9, 10, and 11 shall be omitted. 4.3.2 Group B inspection (PI). Group B inspection shall be in accordance with MIL-PRF-38534. Provided by IHSNo

41、t for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-09237 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 14 DSCC FORM 2234 APR 97 4.3.3 Group C inspection (PI). Group C inspection shall be in accordance wi

42、th MIL-PRF-38534 and as follows: a. End-point electrical parameters shall be as specified in table II herein. b. Steady-state life test, method 1005 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and sh

43、all be made available to either DLA Land and Maritime -VA or the acquiring activity upon request. Also, the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-STD-883. (2) TCas specified in accor

44、dance with table I of method 1005 of MIL-STD-883. (3) Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883. 4.3.4 Group D inspection (PI). Group D inspection shall be in accordance with MIL-PRF-38534. 4.3.5. Radiation hardness assurance (RHA). RHA qualification is required o

45、nly for those devices with the RHA designator as specified herein. See table IIIA and IIIB. Table IIIA. Radiation Hardness Assurance Methods Table. RHA method Employed Testing at rated total dose of (100 krad) Worst Case Analysis Performed End point electricals after total dose Element Level Hybrid

46、Device Level Includes temperature effects Combines temperature and radiation effects Combines total dose and displacement effects End-of-life Element Level Hybrid device level 1X 1.5X Yes Yes No Yes 1/ TC= +25C TC= +25C 1/ Worst case analysis performed with case temperatures from -55C to +125C, for

47、10 years of full time operation Table IIIB. Hybrid level and element level test table. 2/ CMOS is immune to ELDRS, not tested. Radiation test Total Ionizing Dose Heavy Ion Hybrid Level Testing Low Dose Rate High Dose Rate (HDR) ELDRS Characterization SET Transient SEU (upset) SEL (latch-up) Not test

48、ed Tested (150 krad) No Tested (86 MeV-cm2/mg) Tested (86 MeV-cm2/mg) Tested (86 MeV-cm2/mg) Element-Level Testing CMOS IC 2/ Tested (2 Mrad) 2/ No No No Bipolar Discrete Devices Not tested Tested (100 krad) No No No No Bipolar Linear or Mixed Signal 90 nm Not tested Tested (100 krad) No No No No Provided by IHSNot for ResaleNo reproduction or networking permitted wit