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本文(DLA SMD-5962-10242 REV A-2013 MICROCIRCUIT CMOS COMPARATOR QUAD MONOLITHIC SILICON.pdf)为本站会员(amazingpat195)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-10242 REV A-2013 MICROCIRCUIT CMOS COMPARATOR QUAD MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Updated section 1.5 and the footnotes. Table I: Made changes throughout to the test conditions, limits, and additional tests were added to reflect the RHA test requirements for these devices. Made clarifications to table IIIA and table IV. Update

2、d section 4.3.5. -sld 13-12-20 Charles F. Saffle REV SHEET REV A A A A SHEET 15 16 17 18 REV STATUS REV A A A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Steve L. Duncan DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil/

3、 STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY Greg Cecil APPROVED BY Charles F. Saffle MICROCIRCUIT, CMOS, COMPARATOR, QUAD, MONOLITHIC SILICON DRAWING APPROVAL DATE 13-04-16 AMSC N/A REVISION LEVEL A SIZE A C

4、AGE CODE 67268 5962-10242 SHEET 1 OF 18 DSCC FORM 2233 APR 97 5962-E017-14 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-10242 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC F

5、ORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation

6、hardness assurance levels are reflected in the PIN. 1.2 PIN. The PIN shall be as shown in the following example: 5962 H 10242 01 K X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2

7、.3) / Drawing number 1.2.1 Radiation hardness assurance (RHA) designator. RHA marked devices shall meet the MIL-PRF-38534 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit

8、 function as follows: Device type Generic number Circuit function 01 RHD5910 Quad Comparator 02 RHD5911 Quad Comparator, Clocked outputs 03 RHD5912 Quad Comparator, Open drain outputs 1.2.3 Device class designator. This device class designator shall be a single letter identifying the product assuran

9、ce level. All levels are defined by the requirements of MIL-PRF-38534 and require QML Certification as well as qualification (Class H, K, and E) or QML Listing (Class G and D). The product assurance levels are as follows: Device class Device performance documentation K Highest reliability class avai

10、lable. This level is intended for use in space applications. H Standard military quality class level. This level is intended for use in applications where non-space high reliability devices are required. G Reduced testing version of the standard military quality class. This level uses the Class H sc

11、reening and In-Process Inspections with a possible limited temperature range, manufacturer specified incoming flow, and the manufacturer guarantees (but may not test) periodic and conformance inspections (Group A, B, C and D). E Designates devices which are based upon one of the other classes (K, H,

12、 or G) with exception(s) taken to the requirements of that class. These exception(s) must be specified in the device acquisition document; therefore the acquisition document should be reviewed to ensure that the exception(s) taken will not adversely affect system performance. D Manufacturer specifie

13、d quality class. Quality level is defined by the manufacturers internal, QML certified flow. This product may have a limited temperature range. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-10242 DLA LAND A

14、ND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 16 Flat package with formed leads 1.2.5 Lead

15、finish. The lead finish shall be as specified in MIL-PRF-38534. 1.3 Absolute maximum ratings. 1/ Supply voltage (VCC) . +7.0 V dc Input voltage (VIN) range . VCC+0.4 V, GND -0.4 V Junction temperature (TJ) . +150C Power +25C 250 mW Storage temperature range . -65C to +150C Lead temperature (solderin

16、g, 10 seconds) . +300C 1.4 Recommended operating conditions. Supply voltage (VCC) range +3.0 V dc to +5.5 V dc Input Common Mode (VCM) range: Device types 01 and 02 VCCto GND Device type 03 VCC-1.5 V to GND Case operating temperature range (TC) . -55C to +125C 1.5 Radiation features. 2/ Maximum Tota

17、l Ionizing Dose (TID) (dose rate = 50 - 300 rad(Si)/s): In accordance with MIL-STD-883, method 1019, condition A 1 Mrad(Si) Enhanced Low Dose Rate Sensitvity (ELDRS) . 3/ Single Event Latchup (SEL) 100MeV-cm2/mg 4/ Neutron Displacement Damage ( 1 x 1014 neutrons/cm2) . 3/ 2. APPLICABLE DOCUMENTS 2.1

18、 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPEC

19、IFICATIONS MIL-PRF-38534 - Hybrid Microcircuits, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard for Electronic Component Case Outlines. _ 1/ Stresses above the absolute maximum ratings may cause permanent

20、 damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ See section 4.3.5 for the manufacturers radiation hardness assurance analysis and testing. 3/ Not tested, Immune by 100 percent CMOS technology. 4/ Single Event Latchup (SEL) immunity i

21、s accomplished by double, fully enclosing, guard rings in the CMOS design layout. The guard rings eliminate the parasitic pnpn structure that is responsible for latchup in CMOS circuits. This limit is guaranteed by design or process, but not tested. Provided by IHSNot for ResaleNo reproduction or ne

22、tworking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-10242 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standar

23、d Microcircuit Drawings. (Copies of these documents are available online at http:/quicksearch.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing

24、and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item performance requirements for device clas

25、ses D, E, G, H, and K shall be in accordance with MIL-PRF-38534. Compliance with MIL-PRF-38534 shall include the performance of all tests herein or as designated in the device manufacturers Quality Management (QM) plan or as designated for the applicable device class. The manufacturer may eliminate,

26、 modify or optimize the tests and inspections herein, however the performance requirements as defined in MIL-PRF-38534 shall be met for the applicable device class. In addition, the modification in the QM plan shall not affect the form, fit, or function of the device for the applicable device class.

27、 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38534 and herein. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connecti

28、ons shall be as specified on figure 2. 3.2.3 Logic diagram(s). The logic diagram(s) shall be as specified on figure 3. 3.2.4 Switching diagram(s). The switching diagram(s) shall be as specified on figure 4. 3.2.5 Radiation exposure circuits. The radiation exposure circuits shall be maintained by the

29、 manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in table I and shall apply

30、over the full specified operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking of device(s). Marking of device(s) shall be in accordance w

31、ith MIL-PRF-38534. The device shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers vendor similar PIN may also be marked. 3.6 Data. In addition to the general performance requirements of MIL-PRF-38534, the manufacturer of the device described herein shall maintain the el

32、ectrical test data (variables format) from the initial quality conformance inspection group A lot sample, for each device type listed herein. Also, the data should include a summary of all parameters manually tested, and for those which, if any, are guaranteed. This data shall be maintained under do

33、cument revision level control by the manufacturer and be made available to the preparing activity (DLA Land and Maritime -VA) upon request. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-10242 DLA LAND AND M

34、ARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 3.7 Certificate of compliance. A certificate of compliance shall be required from a manufacturer in order to supply to this drawing. The certificate of compliance (original copy) submitted to DLA Land and Maritime -VA s

35、hall affirm that the manufacturers product meets the performance requirements of MIL-PRF-38534 and herein. 3.8 Certificate of conformance. A certificate of conformance as required in MIL-PRF-38534 shall be provided with each lot of microcircuits delivered to this drawing. Provided by IHSNot for Resa

36、leNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-10242 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TC +125C

37、VCC= +5.0 V unless otherwise specified Group A subgroups Device types Limits Unit Min Max Quiescent supply current 1/ ICCQ1,2,3 01 15 mA 02 10 A All comparators enabled. No load 03 3 mA All comparators disabled 2/ 03 300 nA Input offset voltage 1/ VOS 1,2,3 01 3/ -60 60 mV 02,03 -5 5 Input offset cu

38、rrent 1/ IOS1,2,3 4/ 01 -1 1 nA 1,3 4/ 02,03 -100 100 pA 2 02,03 -500 500 Input bias current 1/ IB1,3 4/ 01 -1 1 nA 02,03 -100 100 pA 2 All -1 1 nA Common Mode Rejection Ratio 1/ CMRR 4,5,6 01 2/ 50 dB 02,03 60 Power supply rejection ratio 1/ PSSR4,5,6 01 2/ 50 dB 02,03 70 Output voltage high 1/ VOH

39、RLOAD= 2 k 1,2,3 01,02 4.9 V Output voltage low 1/ VOLRLOAD= 2 k 1,2,3 01,02 0.1 V IOL= 5 mA 03 0.25 V IOL= 10 mA 0.44 IOL= 20 mA 1.0 Output leakage current 1/ ILKOUT VOUT= VCC 1,2,3 4/ 03 50 nA Input voltage - Enable 2/ (EN_AB and EN_CD) VHI High (Enabled) 1,2,3 03 3.5 V VLO Low (Enabled) 1.5 V Inp

40、ut current - Enable (EN_AB and EN_CD) IEN 1,2,3 4/ 03 10 nA Gain (1/ Device type 03 only) 2/ A4,5,6 01,03 5 V/mV Short circuit current 2/ IO(sink)VOUTto VCC 1,2,3 01 -130 -220 mA 03 -35 -60 IO(source) VOUTto GND 1,2,3 01 130 220 mA See footnotes on next page. Provided by IHSNot for ResaleNo reproduc

41、tion or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-10242 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions -55C TC +125C V

42、CC= +5.0 V unless otherwise specified Group A subgroups Device types Limits Unit Min Max Clock input voltage high VHI 1,2,3 02 3.5 V Clock input voltage low VLO 1,2,3 02 1.5 V Clock input current ICLK 1,2,3 02 1 nA Output delay tOUT See figure 4 9,10,11 01 200 ns 03 300 Output delay (Enabled) tONEN

43、See figure 4 9,10,11 03 500 ns Output delay (Disabled) tOFFEN See figure 4 9,10,11 03 100 ns Input setup time tS See figure 4 9,10,11 02 1 ns Input hold time tH See figure 4 9,10,11 02 5 ns Output delay tD See figure 4 9,10,11 02 10 ns Clock positive pulse width tWP See figure 4 9,10,11 02 100 ns Cl

44、ock frequency CLK 9,10,11 02 5 MHz 1/ These devices have been tested to (2 Mrad(Si) to Method 1019, condition A of MIL-STD-883 at +25C for these parameters to assure the requirements of RHA designator level “H” (1 Mrad(Si) are met. 2/ Not tested. Shall be guaranteed by design, characterization, or c

45、orrelation to other test parameters. 3/ For device type 01, post radiation test limits at 100 krad(Si), 300 krad(Si), and 500 krad(Si) for the Input offset voltage (VOS) test, are Min = -20 mV and Max = +20 mV. 4/ Subgroup 3 for these parameters is guaranteed, but not production tested. Provided by

46、IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-10242 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 8 DSCC FORM 2234 APR 97 Case X Symbol Inches Millimeters Min Max Min Max A .105 2.67 A1 .030 RE

47、F 0.76 REF A2 .017 .027 0.43 0.69 A3 .012 0.30 b .015 .019 0.38 0.48 c .007 .009 0.18 0.23 D .417 10.59 e .050 BSC 1.27 BSC e1 .350 BSC 8.90 BSC E .300 7.62 E1 .394 .419 10.01 10.64 E2 .346 REF 8.79 REF NOTE: 1. Location of the pin 1 marking. The ESD symbol may be used as the pin 1 marking. 2. The U

48、.S. preferred system of measurement is the metric SI. This item was designed using inch-pound units of measurement. In case of problems involving conflicts between the metric and inch-pound units, the inch-pound units shall rule. 3. The package and lid are electrically isolated from signal pads. FIGURE 1. Case outline. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-10242 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION L

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