DLA SMD-5962-11213 REV A-2012 MICROCIRCUIT LINEAR CMOS MICROPROCESSOR SUPERVISORY CIRCUIT MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add device types 07, 08, 09, 10, 11, and 12. Delete radiation exposure circuit. - ro 12-03-30 C. SAFFLE REV SHEET REV A A A A A A A A A A A A A A A A SHEET 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 REV STATUS REV A A A A A A A A A A A A A A

2、 OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Dan Wonnell DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY

3、 Rajesh Pithadia APPROVED BY Charles F. Saffle MICROCIRCUIT, LINEAR, CMOS, MICROPROCESSOR SUPERVISORY CIRCUIT, MONOLITHIC SILICON DRAWING APPROVAL DATE 11-07-15 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-11213 SHEET 1 OF 30 DSCC FORM 2233 APR 97 5962-E176-12 Provided by IHSNot for ResaleN

4、o reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11213 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting

5、of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2

6、 PIN. The PIN is as shown in the following example: 5962 R 11213 01 Q X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q a

7、nd V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

8、 1.2.2 Device types. The device types identify the circuit function as follows: Device type Generic number Circuit function 01 ISL705ARH Radiation hardened, 5.0 V microprocessor supervisory circuit 02 ISL705BRH Radiation hardened, 5.0 V microprocessor supervisory circuit 03 ISL705CRH Radiation harde

9、ned, 5.0 V microprocessor supervisory circuit 04 ISL706ARH Radiation hardened, 3.3 V microprocessor supervisory circuit 05 ISL706BRH Radiation hardened, 3.3 V microprocessor supervisory circuit 06 ISL706CRH Radiation hardened, 3.3 V microprocessor supervisory circuit 07 ISL705AEH Radiation hardened,

10、 5.0 V microprocessor supervisory circuit 08 ISL705BEH Radiation hardened, 5.0 V microprocessor supervisory circuit 09 ISL705CEH Radiation hardened, 5.0 V microprocessor supervisory circuit 10 ISL706AEH Radiation hardened, 3.3V microprocessor supervisory circuit 11 ISL706BEH Radiation hardened, 3.3

11、V microprocessor supervisory circuit 12 ISL706CEH Radiation hardened, 3.3 V microprocessor supervisory circuit Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11213 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-

12、3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 complia

13、nt, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline. The case outline is as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figur

14、e 1 8 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ Supply voltage range (VDD) . 0.3 V to 6.5 V All other inputs -0.3 V to (VDD+ 0.3 V) Power dissipation (PD)

15、. 2.5 W Lead temperature (soldering, 10 seconds) . +300C Junction temperature (TJ) +175C Storage temperature range -65C to +150C Thermal resistance, junction-to-case (JC) 15C/W Thermal resistance, junction-to-ambient (JA) . 140C/W 1.4 Recommended operating conditions. Supply voltage range (VDD): Dev

16、ice types 01, 02, 03, 07, 08, 09 4.75 V to 5.5 V Device types 04, 05, 06, 10, 11, 12 3.15 V to 3.6 V Ambient operating temperature range (TA) -55C to +125C _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade p

17、erformance and affect reliability. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11213 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 1.5 Radiation features.

18、Maximum total dose available (dose rate = 50 300 rads(Si)/s): Device types 01, 02, 03, 04, 05, 06 100 krads (Si) 2/ Device types 07, 08, 09, 10, 11, 12 100 krads (Si) 3/ Maximum total dose available (dose rate 10 mrads(Si)/s): Device types 07, 08, 09, 10, 11, 12 50 krads(Si) 3/ No single event latch

19、-up (SEL) occurs to effective LET (see 4.4.4.2) . 86 MeV/mg/cm24/ The manufacturer supplying RHA device types 01, 02, 03, 04, 05, 06, 07, 08, 09, 10, 11, and 12 on this drawing has performed characterization testing to demonstrate that the parts do not exhibit enhanced low dose rate sensitivity (ELD

20、RS) in accordance with MIL-STD-883, method 1019, paragraph 3.13.1.1. Therefore these parts may be considered ELDRS free at a level of 100 krads(Si). The manufacturer will perform only high dose rate testing on a wafer by wafer basis in accordance with MIL-STD-883, method 1019, condition A for device

21、 types 01, 02, 03, 04, 05, and 06. The manufacturer will perform high dose rate and low dose rate lot acceptance testing on a wafer by wafer basis in accordance with MIL-STD-883, method 1019, conditions A and D for device types 07, 08, 09, 10, 11, and 12. _ 2/ The manufacturer supplying device types

22、 01, 02, 03, 04, 05, and 06 has performed characterization testing in accordance with MIL-STD-883 method 1019 paragraph 3.13.1.1 and the parts exhibited no enhanced low dose rate sensitivity (ELDRS) at a level of 100 krads(Si). The radiation end point limits for the noted parameters are guaranteed o

23、nly for the conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 100 krads(Si). 3/ The manufacturer supplying device types 07, 08, 09, 10, 11, and 12 has performed characterization testing in accordance with MIL-STD-883 method 1019 paragraph 3.13.1.1 and the pa

24、rts exhibited no enhanced low dose rate sensitivity (ELDRS) at a level of 100 krads (Si). The radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 100 krads(Si), and condition D to

25、a maximum total dose of 50 krads(Si). 4/ Limits are characterized at initial qualification and after any design or process changes which may affect the SEP characteristics but, are not production tested. See manufacturers SEE test report for more information. Provided by IHSNot for ResaleNo reproduc

26、tion or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11213 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following speci

27、fication, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Sp

28、ecification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawing

29、s. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the

30、 extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of semiconductor Devices. (C

31、opies of these documents are available online at http:/www.astm.org or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of

32、this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and

33、 as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for

34、 non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and h

35、erein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Radiation exposure ci

36、rcuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.2.4 Block diagram. The block diagram shall be as specified on figure 3. Provided by IHSNot for Resal

37、eNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11213 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 3.2.5 Timing waveforms. The timing waveforms shall be as specified on figure 4. 3.3 Ele

38、ctrical performance characteristics and post irradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and post irradiation parameter limits are as specified in table IA and shall apply over the full ambient operating temperature range. 3.4 Electrica

39、l test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For pac

40、kages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance

41、with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as

42、required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of complia

43、nce shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturer

44、s product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for devic

45、e class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime -VA of change of product (see 6.2 herein) involving devices acquired to this dra

46、wing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritimes agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation.

47、 Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 110 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo repr

48、oduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11213 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Operating supply voltage VDD1,2,3 01,02,03,07, 08,09 1.2 5.5 V 04,05,06,10,11,12 1.2 3.6 Supply current IDDVDD= 5.5 V 1,2,3 01,02,03,07, 530 A M,D,P,L,R 2/ 1 08,09 530 VDD= 3.6 V 1,2,3 04,05,06,10, 400 M,D,P,