ImageVerifierCode 换一换
格式:PDF , 页数:13 ,大小:81.03KB ,
资源ID:698504      下载积分:10000 积分
快捷下载
登录下载
邮箱/手机:
温馨提示:
如需开发票,请勿充值!快捷下载时,用户名和密码都是您填写的邮箱或者手机号,方便查询和重复下载(系统自动生成)。
如填写123,账号就是123,密码也是123。
特别说明:
请自助下载,系统不会自动发送文件的哦; 如果您已付费,想二次下载,请登录后访问:我的下载记录
支付方式: 支付宝扫码支付 微信扫码支付   
注意:如需开发票,请勿充值!
验证码:   换一换

加入VIP,免费下载
 

温馨提示:由于个人手机设置不同,如果发现不能下载,请复制以下地址【http://www.mydoc123.com/d-698504.html】到电脑端继续下载(重复下载不扣费)。

已注册用户请登录:
账号:
密码:
验证码:   换一换
  忘记密码?
三方登录: 微信登录  

下载须知

1: 本站所有资源如无特殊说明,都需要本地电脑安装OFFICE2007和PDF阅读器。
2: 试题试卷类文档,如果标题没有明确说明有答案则都视为没有答案,请知晓。
3: 文件的所有权益归上传用户所有。
4. 未经权益所有人同意不得将文件中的内容挪作商业或盈利用途。
5. 本站仅提供交流平台,并不能对任何下载内容负责。
6. 下载文件中如有侵权或不适当内容,请与我们联系,我们立即纠正。
7. 本站不保证下载资源的准确性、安全性和完整性, 同时也不承担用户因使用这些下载资源对自己和他人造成任何形式的伤害或损失。

版权提示 | 免责声明

本文(DLA SMD-5962-11222-2011 MICROCIRCUIT LINEAR JFET INPUT OPERATIONAL AMPLIFIER MONOLITHIC SILICON.pdf)为本站会员(李朗)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-11222-2011 MICROCIRCUIT LINEAR JFET INPUT OPERATIONAL AMPLIFIER MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED REV SHET REV SHET REV STATUS REV OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE

2、FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY CHARLES F. SAFFLE MICROCIRCUIT, LINEAR, JFET INPUT OPERATIONAL AMPLIFIER, MONOLITHIC SILICON DRAWING APPROVAL DATE 11-08-25 AMSC N/A REVISION LEVEL SIZE A CAGE CODE 67268 5962-11222 SHEET 1 OF

3、 12 DSCC FORM 2233 APR 97 5962-E424-11 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11222 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. Th

4、is drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Rad

5、iation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 11222 01 V Z A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see

6、1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the ap

7、propriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 LF411 JFET input operational amplifier 1.2.3 Device class designator. The device class designator is a si

8、ngle letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualific

9、ation to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style Z GDFP1-G10 10 Flat pack with gull wing leads 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for devi

10、ce classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11222 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 3 DSCC FORM 2234

11、APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (VS) . 18 V Differential input voltage . 30 V Input voltage range . 15 V 2/ Output short circuit duration Continuous Power dissipation (PD) 670 mW 3/ 4/ Maximum junction temperature (TJ) 150C Lead temperature (soldering, 10 seconds) 260C Storage

12、 temperature range . -65C to +150C Thermal resistance, junction-to-case (JC) . 26C/W Thermal resistance, junction-to-ambient (JA) 170C/W (still air) 120C/W (500 linear feet per minute air flow) 1.4 Recommended operating conditions. Supply voltage (VS) . 15 V Ambient operating temperature range (TA)

13、. -55C to +125C 1.5 Radiation features. 5/ Maximum total dose available (dose rate = 10 mrads(Si)/s) 100 krads(Si) For this device, the manufacturer supplying RHA parts on this drawing has performed a characterization test to demonstrate that the parts do not exhibit enhanced low dose rate sensitivi

14、ty (ELDRS) according to MIL-STD-883 Method 1019 paragraph 3.13.1.1. Therefore this device may be considered ELDRS free. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2

15、/ Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage. 3/ Maximum power dissipation must be derated at elevated temperatures and is dictated by TJ(maximum junction temperature), JA(package junction to ambient thermal resistance), and T

16、A(ambient temperature). The maximum allowable power dissipation at any temperature is PD= (TJ(max) TA) / JAor the number given in absolute maximum ratings paragraph 1.3 herein, which ever is lower. 4/ Operating the part near the maximum power dissipation may cause the part to operate outside guarant

17、eed limits. 5/ For this device, this part has been tested and does not demonstrate low dose rate sensitivity. Radiation end point limits for the noted parameters are guaranteed for the conditions specified in MIL-STD-883, method 1019, condition D. This product is qualified for low dose rate applicat

18、ions and would not be appropriate for high dose rate applications. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11222 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 4 DSCC FORM 2234 A

19、PR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or con

20、tract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HAND

21、BOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19

22、111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3.

23、REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, o

24、r function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions sh

25、all be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1

26、. 3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter

27、limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the su

28、bgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11222 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LE

29、VEL SHEET 5 DSCC FORM 2234 APR 97 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN is not feasible due to space limitations, the manufacturer has the option of not marking

30、the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark.

31、 The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be req

32、uired from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The ce

33、rtificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-P

34、RF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of cha

35、nge for device class M. For device class M, notification to DLA Land and Maritime -VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA Land an

36、d Maritime, DLA Land and Maritimes agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class

37、 M. Device class M devices covered by this drawing shall be in microcircuit group number 49 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11222 DLA LAND AND MARITIME COLUMBU

38、S, OHIO 43218-3990 REVISION LEVEL SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ 3/ -55C TA+125C Group A subgroups Device type Limits Unit unless otherwise specified Min Max Input offset voltage VIORS= 10 k 1 01 -2.0 2.0 mV 2 -3.7 3.73 -3.

39、3 3.3Input offset current IIO1 01 -0.1 0.1 nA M,D,P,L,R 1 -1.0 1.0RS= 10 k 2 -25 25 Input bias current IIB1 01 -0.2 0.2 nA M,D,P,L,R 1 -0.2 6.0RS= 10 k 2 -50 50 Input common mode voltage range VCM4/ 1,2,3 01 -9.0 +9.0 V Common mode rejection ratio CMRR RS 10 k, VCM= 9 V 1,2,3 01 70 dB Supply voltage

40、 rejection ration +PSRR +VCC= 6 V, -VCC= -15 V 1,2,3 01 70 dB -PSRR +VCC= 15 V, -VCC= -6 V 70 Supply current IS1,2,3 01 3.4 mA Output short circuit current -IOS+VI= -11 V, -VI= 11 V, 1 01 13 50 mA RS= 10 k 2,3 6.0 60 +IOS+VI= 11 V, -VI= -11 V, 1 -50 -13 RS= 10 k 2,3 -60 -6.0 Input offset voltage adj

41、ustment +VIOadjTA= +25C 1 01 8.0 mV -VIOadj8.0Large signal voltage gain +AVSVO= 0 to 10 V, RL= 2 k 5/ 4 01 25 V/mV 5,6 15-AVSVO= 0 to -10 V, RL= 2 k 5/ 4 25 5,6 15See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD

42、 MICROCIRCUIT DRAWING SIZE A 5962-11222 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ 2/ 3/ -55C TA+125C Group A subgroups Device type Limits Unit unless otherwise sp

43、ecified Min Max Output voltage swing +VO+V = 11 V, -V = -11 V, RL= 10 k, RS= 10 k 4,5,6 01 12 V -VO+V = -11 V, -V = 11 V, RL= 10 k, RS= 10 k -12 Slew rate +SR VO= -5 V to 5 V 7 01 8.0 V/s -SR VO= 5 V to -5 V 8.0 Gain bandwidth product GBW 7 01 2.7 MHz 1/ Unless otherwise specified, VCC= 15 V, VCM= 0

44、 V, and RS= 0 . 2/ RHA devices supplied to this drawing meet all levels M, D, P, L, and R of irradiation. However, this device is only tested at the R level (see 1.5 herein). Pre and post irradiation values are identical unless otherwise specified in table I. When performing post irradiation electri

45、cal measurements for any RHA level, TA= +25C. 3/ For this device, this part has been tested and does not demonstrate low dose rate sensitivity. Radiation end point limits for the noted parameters are guaranteed for the conditions specified in MIL-STD-883, method 1019, condition D. This product is qu

46、alified for low dose rate applications and would not be appropriate for high dose rate applications. 4/ Parameters are guaranteed by CMRR test. 5/ Datalog in K = V/mV. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE

47、 A 5962-11222 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 8 DSCC FORM 2234 APR 97 Device type 01 Case outline Z Terminal number Terminal symbol 1 NC 2 BALANCE3 -INPUT 4 +INPUT 5 -VS6 BALANCE7 OUTPUT 8 +VS9 NC10 NC FIGURE 1. Terminal connections. Provided by IHSNot for Resale

48、No reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11222 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 9 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, o

copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
备案/许可证编号:苏ICP备17064731号-1