DLA SMD-5962-11239 REV A-2013 MICROCIRCUIT LINEAR POWER DETECTOR MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add device type 02 and paragraph 4.4.4.1. Add new footnote 2/ to Table I. Under Table I, make two changes to footnote 9/; delete “COMM” and replace with “0 V”; delete “1 A” and replace with “5 A”. - ro 13-12-04 C. SAFFLE REV SHEET REV A A A A SHE

2、ET 15 16 17 18 REV STATUS REV A A A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Dan Wonnell DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTM

3、ENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY Rajesh Pithadia APPROVED BY Charles F. Saffle MICROCIRCUIT, LINEAR, POWER DETECTOR, MONOLITHIC SILICON DRAWING APPROVAL DATE 13-02-06 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-11239 SHEET 1 OF 18 DSCC FORM 2233 APR 97 5962-E547-13

4、 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11239 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product ass

5、urance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is re

6、flected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 11239 01 V H A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designa

7、tor. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type. The device type identifies the circuit function as follows: Device type Generic number Circuit func

8、tion 01 ADL5501 Power detector, 50 MHz to 6 GHz 02 ADL5501 Power detector, 50 MHz to 6 GHz 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation Q or V Certification and qualifi

9、cation to MIL-PRF-38535 1.2.4 Case outline. The case outline are as designated in MIL-STD-1835 as follows: Outline letter Descriptive designator Terminals Package style H GDFP1-F10 10 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V. Provided b

10、y IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11239 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (VS) . 5.5 V VRMS . 0

11、 V - VSRFIN . 1.25 V rms ENBL . 1.25 V rms Equivalent power, re: 50 15 dBm Power dissipation 80 mW Junction temperature +140nullC Storage temperature range . -65nullC to +150nullC Thermal resistance, junction-to-ambient (JA) 167nullC/W 2/ Thermal resistance, junction-to-case (JC) . 146nullC/W 2/ 1.4

12、 Recommended operating conditions. Supply voltage range, (VS) . 3.3 V to 5.0 V Ambient operating temperature range -55nullC to +125nullC 1.4.1 Operating performance characteristics. 3/ Input resistance: f = 50 MHz . 87 f = 100 MHz . 78 f = 900 MHz . 52 f = 4000 MHz . 41 f = 6000 MHz . 86 Input capac

13、itance: f = 50 MHz . 6.9 pF f = 100 MHz . 4.2 pF f = 900 MHz . 0.9 pF f = 4000 MHz . 0.1 pF f = 6000 MHz . 0.1 pF Temperature sensitivity +25C TA +125C: f = 50 MHz . 0.0039 dB/C f = 100 MHz . 0.0028 dB/C f = 900 MHz . 0.0019 dB/C f = 4000 MHz . 0.0019 dB/C f = 6000 MHz . 0.0017 dB/C Temperature sens

14、itivity -55C TA +25C: f = 50 MHz . -0.0037 dB/C f = 100 MHz . -0.0018 dB/C f = 900 MHz . -0.0002 dB/C f = 4000 MHz . -0.0043 dB/C f = 6000 MHz . -0.0008 dB/C _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade

15、 performance and affect reliability. 2/ Measurement taken under absolute worst case condition of still air and represents data taken with a thermal camera for highest power density location. See MIL-STD-1835 for average package JCthermal numbers with smaller die size. 3/ TA +25C, VS= 5.0 V and 3.3 V

16、, ENBL = VS, CFLTR= 1nF, COUT= open, unless otherwise specified. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11239 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 A

17、PR 97 1.4.1 Operating performance characteristics - continued. 3/ Dynamic range (CW input): f = 50 MHz: 2.00 dB error, VS= 3.3 V . 32 dB 4/, 5/ 2.00 dB error, VS= 5 V 35 dB 4/, 5/ f = 100 MHz: 0.25 dB error, (delta from +25C, VS= 5 V) . 28 dB 6/, 5/ 0.25 dB error, VS= 3.3 V 19 dB 4/, 5/ 0.25 dB erro

18、r, VS= 5 V 20 dB 4/, 5/ 2.00 dB error, VS= 3.3 V . 26 dB 4/, 5/ 2.00 dB error, VS= 5 V 30 dB 4/, 5/ f = 900 MHz: 0.25 dB error, (delta from +25C, VS= 5 V) . 33 dB 6/, 5/ 0.25 dB error, VS= 3.3 V . 20 dB 4/, 5/ 0.25 dB error, VS= 5 V 23 dB 4/, 5/ 2.00 dB error, VS= 3.3 V . 27 dB 4/, 5/ 2.00 dB error,

19、 VS= 5 V 30 dB 4/, 5/ f = 4000 MHz: 0.25 dB error, (delta from +25C, VS= 5 V) . 5 dB 6/, 5/ 0.25 dB error, VS= 3.3 V . 4 dB 4/, 5/ 0.25 dB error, VS= 5 V 5 dB 4/, 5/ 2.00 dB error, VS= 3.3 V . 30 dB 4/, 5/ 2.00 dB error, VS= 5 V 33 dB 4/, 5/ f = 6000 MHz: 0.25 dB error, (delta from +25C, VS= 5 V) .

20、25 dB 6/, 5/ 0.25 dB error, VS= 3.3 V . 20 dB 4/, 5/ 0.25 dB error, VS= 5 V 20 dB 4/, 5/ 2.00 dB error, VS= 3.3 V . 35 dB 4/, 5/ 2.00 dB error, VS= 5 V 35 dB 4/, 5/ Maximum input level: f = 50 MHz . 8 dBm 4/ f = 100 MHz . 6 dBm 4/ f = 900 MHz . 6 dBm 4/ f = 4000 MHz . 10 dBm 4/ f = 6000 MHz . 14 dBm

21、 4/ Minimum input level: f = 50 MHz . -18 dBm 4/ f = 100 MHz . -18 dBm 4/ f = 900 MHz . -18 dBm 4/ f = 4000 MHz . -18 dBm 4/ f = 6000 MHz . -17 dBm 4/ _ 4/ Error referred to best-fit line at +25C. 5/ Dynamic range is the ratio of maximum to minimum input level applied to the input to maintain the sp

22、ecified error. It is calculated by 20*log(Vrms_max/Vrms_min). 6/ Output delta from +25C. Output voltage at -55C and +125C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11239 DLA LAND AND MARITIME COLUMBUS,

23、 OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 1.4.1 Operating performance characteristics - continued. 3/ Enable time (ON): CFLTR= COUT= ROUT= OPEN, f = 900 MHz, VS= 3.3 V . 9 s CFLTR= 1 nF, COUT= ROUT= OPEN, f = 900 MHz, VS= 3.3 V 42 s CFLTR= COUT= ROUT= OPEN, f = 900 MHz, VS= 5 V

24、 8 s CFLTR= 1 nF, COUT= ROUT= OPEN, f = 900 MHz, VS= 5 V . 40 s Enable time (OFF): CFLTR= COUT= ROUT= OPEN, f = 900 MHz, VS= 3.3 V . 16 s CFLTR= 1 nF, COUT= ROUT= OPEN, f = 900 MHz, VS= 3.3 V 17 s CFLTR= COUT= ROUT= OPEN, f = 900 MHz, VS= 5 V 25 s CFLTR= 1 nF, COUT= ROUT= OPEN, f = 900 MHz, VS= 5 V

25、. 27 s 1.5 Radiation features. Maximum total dose available (dose rate = 50 300 rads(Si)/s): Device type 01 . 100 krads(Si) 7/ Maximum total dose available (dose rate 10 mrads(Si)/s): Device type 02 . 50 krads(Si) 8/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The

26、 following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufactu

27、ring, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Micr

28、ocircuit Drawings. (Copies of these documents are available online at http:/quicksearch.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the

29、 references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 7/ Device type 01 may be dose rate sensitive in space environment and may demonstrate enhanced low dose

30、rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A for device type 01. 8/ For device type 02, radiation end point limits for the noted parameters are guaranteed for the conditions specified in

31、 MIL-STD-883, method 1019, condition D. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11239 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1

32、 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as descr

33、ibed herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. T

34、he terminal connections shall be as specified on figure 1. 3.2.3 Block diagram. The block diagram shall be as specified on figure 2. 3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made availa

35、ble to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply ov

36、er the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. I

37、n addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marke

38、d. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. 3.6 Certificate of compliance. For device classes Q and V, a certificate of co

39、mpliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manuf

40、acturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall be provided with each lot of microcircuits delivered to this drawing. Provided

41、by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11239 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditi

42、ons 1/ 2/ -55C TA +125C VS= 5.0 V and 3.3 V, ENBL = VS, Group A subgroups Device type Limits Unit CFLTR= 1 nF, COUT= open unless otherwise specified Min Max RMS CONVERSION (f = 50 MHz), input RFIN to output VRMS Linearity error 3/ LE Dynamic range = 21 dB, 4/, 5/ 4, 5, 6 01, 02 -1 +1 dB -16 dBm VIN

43、5 dBm M, D, P, L, R 4 01 -1 +1 M, D, P, L 4 02 -1 +1 Conversion gain, VOUT= (gain x VIN) + intercept GAIN 4, 5, 6 01, 02 4.0 5.4 V/V rms M, D, P, L, R 4 01 4.0 5.4 M, D, P, L 4 02 4.0 5.4 Output intercept 6/ INT 1, 2, 3 01, 02 -0.05 +0.1 V M, D, P, L, R 1 01 -0.05 +0.1 M, D, P, L 1 02 -0.05 +0.1 Out

44、put voltage, high power in POHI PIN= 5 dBm, 400 mV rms, 1, 2, 3 01, 02 1.15 V VS= 5.0 V M, D, P, L, R 1 01 1.15 M, D, P, L 1 02 1.15 PIN= 5 dBm, 400 mV rms, 1, 2, 3 01, 02 1.2 VS= 3.3 V M, D, P, L, R 1 01 1.2 M, D, P, L 1 02 1.2 Output voltage, low power in POLO PIN= -21 dBm, 1, 2, 3 01, 02 0.08 V 2

45、0 mV rms M, D, P, L, R 1 01 0.08 M, D, P, L 1 02 0.08 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11239 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEE

46、T 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - continued. Test Symbol Conditions 1/ 2/ -55C TA +125C VS= 5.0 V and 3.3 V, ENBL = VS, Group A subgroups Device type Limits Unit CFLTR= 1 nF, COUT= open unless otherwise specified Min Max RMS CONVERSION (f = 100 MHz), input R

47、FIN to output VRMS Linearity error 3/ LE Dynamic range = 21 dB 4/, 5/, VS= 2.97 7/, 3.3 V, 5.0 V 4, 5, 6 01, 02 -1 +1 dB -16 dBm VIN 5 dBm M, D, P, L, R 4 01 -1 +1 M, D, P, L 4 02 -1 +1 Conversion gain, VOUT= (gain x VIN) + intercept GAIN VS= 2.97 7/, 3.3 V, 5.0 V 4, 5, 6 01, 02 5.3 7.8 V/V rms M, D

48、, P, L, R 4 01 5.3 7.8 M, D, P, L 4 02 5.3 7.8 Output intercept 6/ INT VS= 2.97 7/, 3.3 V, 5.0 V 1, 2, 3 01, 02 -0.05 +0.1 V M, D, P, L, R 1 01 -0.05 +0.1 M, D, P, L 1 02 -0.05 +0.1 Output voltage, high power in POHI PIN= 5 dBm, 400 mV rms 1, 2, 3 01, 02 2.2 V M, D, P, L, R 1 01 2.2 M, D, P, L 1 02 2.2 Output voltage, low power in POLO