DLA SMD-5962-12204 REV A-2013 MICROCIRCUIT MEMORY DIGITAL CMOS RADIATION-HARDENED 64-MEG USERCONFIGURABLE 3 3 VOLT NOR FLASH MEMORY MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Added Appendix A to allow for the procurement of die. Updated boilerplate. - glg 13-08-13 Charles Saffle REV A A SHEET 35 36 REV A A A A A A A A A A A A A A A A A A A A SHEET 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 REV STATUS

2、REV A A A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Gary L. Gross DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING CHECKED BY Laura Leeper THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTM

3、ENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE APPROVED BY Charles Saffle MICROCIRCUIT, MEMORY, DIGITAL, CMOS, RADIATION-HARDENED, 64-MEG, USER-CONFIGURABLE, 3.3 VOLT, NOR FLASH MEMORY, MONOLITHIC SILICON DRAWING APPROVAL DATE 12-07-25 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-12204 SHEE

4、T 1 OF 36 DSCC FORM 2233 APR 97 5962-E532-13 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-12204 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 S

5、cope. This drawing documents two product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38535. A choice of case outlines and lead finishes which are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are r

6、eflected in the PIN. 1.2 PIN. The PIN shall be as shown in the following example: 5962 L 12204 01 Q X C Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 Radi

7、ation hardness assurance (RHA) designator. RHA marked devices shall meet the MIL-PRF-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device ty

8、pe Generic number Circuit function Access time 01 8QNF8M8 64-MEG NOR FLASH MEMORY 60 ns 02 8QNF8M8 64-MEG NOR FLASH MEMORY with additional screening 1/ 60 ns 03 8QNF8M8 64-MEG NOR FLASH MEMORY 60 ns 04 8QNF8M8 64-MEG NOR FLASH MEMORY with additional screening 1/ 60 ns 1.2.3 Device class designator.

9、The device class designator shall be a single letter identifying the product assurance level as follows: Device class Device requirements documentation Q, V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: O

10、utline letter Descriptive designator Terminals Package style X See figure 1 48 Ceramic flat package 1.2.5 Lead finish. The lead finish shall be as specified in MIL-PRF-38535. 1/ Device types 02 and 04 provide QML Q product with additional testing as specified in paragraph 4.2.1d. Provided by IHSNot

11、for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-12204 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 2/ Supply voltage range (VCC) -0.3 V dc to +4.0

12、V dc Voltage range on any pin (VIO) -0.3 V dc to VCC+0.3 V dc Power dissipation (PD) at TC= 105C 1.0 W maximum at 5 MHz Storage temperature range . -65C to +150C Lead temperature (soldering, 30 seconds + 5 seconds) . +215C + 5C Maximum junction temperature (JC) 8C/W Output short-circuit current 200

13、mA 3/ DC input current . +10 mA Data retention: 4/ TC= 105C . 5 years minimum TC= 90C . 21 years minimum TC= 75C . 85 years minimum TC= 60C . 350 years minimum Endurance (-40C to +105C) . 10,000 cycles/sector minimum 1.4 Recommended operating conditions. 5/ Supply voltage range (VCC) . +3.0 V dc to

14、+3.6 V dc Input low voltage range (VIL) . -0.5 V dc to +0.8 V dc Input high voltage range (VIH) +2.1 V dc to VCC+ 0.3 V dc Case operating temperature range (TC) -40C to +105C 1.5 Radiation features For Device types 01 and 02: Maximum total dose available at condition A (dose rate = 50-300 rads(Si)/s

15、) 10 krads(Si) 5/ For Device types 03 and 04: Maximum total dose available at condition C (dose rate = 50-300 rads(Si)/s) 50 krads(Si) 6/ (900 rads(Si) device unpowered and 100 rads(Si) device statically biased duty cycle) Single event phenomenon (SEP) effective with no latch-up . 100 errors or 106i

16、ons/cm2. c. The flux shall be between 102and 105ions/cm2/s. The cross-section shall be verified to be flux independent by measuring the cross-section at two flux rates which differ by at least an order of magnitude. d. The particle range shall be 20 microns in silicon. e. The test temperature shall

17、be +25C 10C for single event upset testing and at the maximum rated operating temperature +10C for single event latch-up testing. f. Bias conditions shall be VCC= 3.0 V dc for upset measurements and VCC= 3.6 V dc for the latch-up measurements. g. For SEP test limits, see Table IB herein. Provided by

18、 IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-12204 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 29 DSCC FORM 2234 APR 97 5. PACKAGING 5.1 Packaging requirements. The requirements for packagi

19、ng shall be in accordance with MIL-PRF-38535. 6. NOTES 6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. 6.2 Replaceability. Microcircuits covered by this drawing

20、 will replace the same generic device covered by a contractor-prepared specification or drawing. 6.3 Configuration control of SMDs. All proposed changes to existing SMDs will be coordinated as specified in MIL-PRF-38535. 6.4 Record of users. Military and industrial users shall inform DLA Land and Ma

21、ritime when a system application requires configuration control and the applicable SMD. DLA Land and Maritime will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic devices (FSC 5962) should

22、contact DLA Land and Maritime-VA, telephone (614) 692-8108. 6.5 Comments. Comments on this drawing should be directed to DLA Land and Maritime-VA, Columbus, Ohio 43218-3990, or telephone (614) 692-0540. 6.6 Sources of supply. Sources of supply are listed in MIL-HDBK-103 and QML-38535. The vendors li

23、sted in MIL-HDBK-103 and QML-38535 have submitted a certificate of compliance (see 3.7 herein) to DLA Land and Maritime-VA and have agreed to this drawing. 6.7 Additional information. When applicable, a copy of the following additional data shall be maintained and available from the device manufactu

24、rer: a. RHA upset levels. b. Test conditions (SEP). c. Number of upsets (SEP). d. Occurrence of latch-up (SEP). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-12204 DLA LAND AND MARITIME COLUMBUS, OHIO 43218

25、-3990 REVISION LEVEL A SHEET 30 DSCC FORM 2234 APR 97 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-12204 A.1 SCOPE A.1.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified Manufacturers List (QML) Program. QML microcircuit die meeting the

26、requirements of MIL-PRF-38535 and the manufacturers approved QM plan for use in monolithic microcircuits, multichip modules (MCMs), hybrids, electronic modules, or devices using chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of m

27、ilitary high reliability (device class Q) and space application (device Class V) are reflected in the Part or Identification Number (PIN). When available a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN. A.1.2 PIN. The PIN shall be as shown in the following example: 59

28、62 D 12204 01 V 9 A Federal RHA Device Device Die Die Stock class designator type class code Details designator (see 10.2.1) (see 10.2.2) designator (see 10.2.4) (see 10.2.3) Drawing Number A.1.2.1 RHA designator. Device classes Q and V RHA identified die shall meet the MIL-PRF-38535 specified RHA l

29、evels. A dash (-) indicates a non-RHA die. A.1.2.2 Device type(s). The device type(s) shall identify the circuit function as follows: Device type Generic number Circuit function Access time 01 8QNF8M8 64-MEG NOR FLASH MEMORY 60 ns 02 8QNF8M8 64-MEG NOR FLASH MEMORY with additional screening 1/ 60 ns

30、 03 8QNF8M8 64-MEG NOR FLASH MEMORY 60 ns 04 8QNF8M8 64-MEG NOR FLASH MEMORY with additional screening 1/ 60 ns A.1.2.3 Device class designator. Device class Device requirements documentation Q or V Certification and qualification to the die requirements of MIL-PRF-38535. A.1.2.4 Die code. The die code designator shall be a number 9 for all devices supplied as die only with no case outline. 1/ Device types 02 and 04 provide QML Q product with additional testing as specified in paragraph 4.2.1d. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-