DLA SMD-5962-12222-2012 MICROCIRCUIT LINEAR DUAL PRECISION OPERATIONAL AMPLIFIER MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED REV SHEET REV SHEET 15 16 17 REV STATUS REV OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RAJESH PITHADIA DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS D

2、RAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY CHARLES F. SAFFLE MICROCIRCUIT, LINEAR, DUAL, PRECISION, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON DRAWING APPROVAL DATE 12-08-01 AMSC N/A REVISION LEVEL SIZE A CAGE CODE 6

3、7268 5962-12222 SHEET 1 OF 17 DSCC FORM 2233 APR 97 5962-E436-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-12222 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 2 DSCC FORM 2234 APR

4、 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When availabl

5、e, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 12222 01 V X A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finis

6、h (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the ci

7、rcuit function as follows: Device type Generic number Circuit function 01 ISL70218SEH Radiation hardened, dual, 36 V, precision, single supply, low power, operational amplifier 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as fo

8、llows: Device class Device requirements documentation Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X CDFP3-F10 10 Flat pack 1.2.5 Lead

9、 finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-12222 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET

10、 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (VCC) 36 V Differential input current . 20 mA Differential input voltage 36 V or (V-) 0.5 V to (V+) + 0.5 V Minimum/maximum input voltage 36 V or (V-) 0.5 V to (V+) + 0.5 V Maximum/minimum input current 20 mA Output short circu

11、it duration (one output at a time) . Indefinite Power dissipation (PD): TA= +25C . 961mW TA= +125C . 192mW Junction temperature (TJ) . +150C Lead temperature (soldering, 10 seconds) +300C Storage temperature range -65C to +150C Thermal resistance, junction-to-case (JC) 130C/W 2/ Thermal resistance,

12、junction-to-ambient (JA) . 20C/W 3/ 1.4 Recommended operating conditions. Supply voltage range . 3 V (+1.8 V/-1.2 V) to 30 V (15 V) Ambient operating temperature range (TA) . -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 50 300 rads(Si)/s): 100 krads(Si) 4/ Maximum

13、total dose available (dose rate 10 mrads(Si)/s): 50 krads(Si) 4/ Single event phenomenon (SEP) : No Single event latchup (SEL) occurs at effective LET (see table IB and 4.4.4.2) 86 MeV/mg/cm25/ No Single event burnout (SEB) occur at effective LET (see table IB and 4.4.4.2) . 86 MeV/mg/cm25/ _ 1/ Str

14、esses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ JAis measured with the component mounted on a low effective thermal conductivity test board in free air. 3/ For JC, the case t

15、emperature location is the center of the exposed metal pad on the package underside. 4/ The radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 100 krads(Si), and condition D to a

16、maximum total dose of 50 krads(Si). 5/ Limits are characterized at initial qualification and after any design or process changes which may affect the upset or latchup characteristics but, not production tested unless specified by the customer through the purchase order or contract. For more informat

17、ion on destructive SEE (SEB) test results, customers are requested to contact manufacturers. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-12222 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVE

18、L SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited

19、in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines.

20、DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D

21、, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192 - St

22、andard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of semiconductor Devices. (Copies of these documents are available online at http:/www.astm.org or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). 2.3

23、Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.

24、1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as desc

25、ribed herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V. 3.2.1 Ca

26、se outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level contro

27、l and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in

28、table IA and shall apply over the full ambient operating temperature range. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-12222 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 5 DSCC FO

29、RM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ -55C TA +125C Group A subgroups Device type Limits Unit unless otherwise specified Min Max Offset voltage VOS1 01 230 V 2, 3 290 M,D,P,L,R 1 290 Offset voltage drift TCVOS1, 2, 3 01 1.4 VC Input offset volt

30、age match VOS1 01 280 V 2, 3 365 M,D,P,L,R 1 365 Input offset current IOS1 01 -50 50 nA 2, 3 -75 75 M,D,P,L,R 1 -75 75 Input bias current IB1 01 -0.575 A 2, 3 -0.8 M,D,P,L,R 1 -1.5 Common mode input voltage range VCMIRGuaranteed by CMRR test 1 01 (-V) 0.5 (+V) - 1.8 V 2, 3 -V (+V) 1.8 M,D,P,L,R 1 -V

31、 (+V) 1.8 Common mode rejection ratio CMRR VCM= -V to (+V) - 1.8 V 1 01 100 dB 2, 3 97 M,D,P,L,R 1 97 Power supply rejection ratio PSRR VS= 3 V to 40 V, VCMIR= valid input voltage 1 01 105 dB 2, 3 100 M,D,P,L,R 1 100 Open loop gain AVOLRL= 10 k to ground, VOUT= -13 V to +13 V 1 01 120 dB 2, 3 115 M,

32、D,P,L,R 1 115 Output voltage high, V+ to VOUT VOHRL= 10 k 1 01 110 mV 2, 3 120 M,D,P,L,R 1 120 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-12222 DLA LAND AND MARITIME COLUMB

33、US, OHIO 43218-3990 REVISION LEVEL SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics Continued. Test Symbol Conditions 1/ 2/ -55C TA +125C Group A subgroups Device type Limits Unit unless otherwise specified Min Max Output voltage low, VOUTto V- VOLRL= 10 k 1 01 70 mV 2,

34、 3 80 M,D,P,L,R 1 80 Supply current per amplifier IS1 01 1.1 mA 2, 3 1.4 M,D,P,L,R 1 1.4 Source current capability IS+1, 2, 3 01 10 mA Sink current capability IS-1, 2, 3 01 10 mA Supply voltage range VCCGuaranteed by PSRR 1, 2, 3 01 3 36 V Slew rate SR AV= 1, RL= 2 k, VOUT= 10 VP-P4 01 0.45 V/s 5, 6

35、 0.4 M,D,P,L,R 4 0.4 Transient response: rise time, small signal, 10% to 90% of VOUTTR(tr) AV= 1, VOUT= 100 mVP-P, RF= 0 , RL= 2 k to VCM9 01 200 ns 10, 11 400 M,D,P,L,R 9 400 Transient response: fall time, small signal, 90% to 10% of VOUTTR(tf) AV= 1, VOUT= 100 mVP-P, RF= 0 , RL= 2 k to VCM9 01 230

36、 ns 10, 11 400 M,D,P,L,R 9 400 Overshoot OS AV= 1, VOUT= 100 mVP-P, RF= 0 , RL= 2 k to VCM4, 5, 6 01 35 % Common mode input voltage range VCMIRV = 5 V, VCM= 0 V, VOUT= 0 V, Guaranteed by CMRR test 1 01 (-V) 0.5 (+V) - 1.8 V 2, 3 -V (+V) 1.8 M,D,P,L,R 1 -V (+V) 1.8 1/ Unless otherwise specified, V =

37、15 V, VCM= 0 V, VOUT= 0 V, RL= Open. 2/ RHA devices supplied to this drawing meet levels M, D, P, L, and R of irradiation for condition A and levels M, D, P, and L for condition D. However, devices are only tested at the R level in accordance with MIL-STD-883, method 1019, condition A and the L leve

38、l in accordance with MIL-STD-883, method 1019, condition D (see 1.5 herein). When performing post irradiation electrical measurements for any RHA level, TA= +25C (see 1.5 herein). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT

39、DRAWING SIZE A 5962-12222 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 7 DSCC FORM 2234 APR 97 TABLE IB. SEP test limits. 1/ 2/ 3/ 4/ Device type SEP Temperature (TC) Bias VINEffective linear energy transfer (LET) 01 No SEL +125C VS= +/-18V 86 MeV/mg/cm2No SEB +125C VS= +/-18

40、V 86 MeV/mg/cm21/ For single event phenomena (SEP) test conditions, see 4.4.4.2 herein. 2/ Technology characterization and model verification supplemented by in-line data may be used in lieu of end of line testing. Test plan must be approved by the technical review board and qualifying activity. 3/

41、Limits are characterized at initial qualification and after any design or process changes which may affect the upset or latchup characteristics but, not production tested unless specified by the customer through the purchase order or contract. 4/ The destructive SEE (SEL/SEB) test performed at the T

42、exas A&M University (TAMU) K500 cyclotron heavy ion facility using Gold (Au) ions which surface LET = 86 MeV/mg/cm2and fluence level 2 x 106ions/cm2. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgro

43、up are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking

44、 the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as req

45、uired in MIL-PRF-38535. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance submitted to DLA Land and Mar

46、itime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V

47、in MIL-PRF-38535 shall be provided with each lot of microcircuits delivered to this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-12222 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVE

48、L SHEET 8 DSCC FORM 2234 APR 97 Device type 01 Case outline X Terminal number Terminal symbol 1 OUTPUT A 2 -INPUT A 3 +INPUT A 4 NC 5 -V 6 NC 7 +INPUT B 8 -INPUT B 9 OUTPUT B 10 +V FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-12222 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SH