DLA SMD-5962-12223-2012 MICROCIRCUIT LINEAR OPERATIONAL AMPLIFIER DUAL 36 V MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED REV SHEET REV SHEET 15 16 17 REV STATUS REV OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAW

2、ING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY CHARLES F. SAFFLE MICROCIRCUIT, LINEAR, OPERATIONAL AMPLIFIER, DUAL, 36 V, MONOLITHIC SILICON DRAWING APPROVAL DATE 12-09-04 AMSC N/A REVISION LEVEL SIZE A CAGE CODE 67268 596

3、2-12223 SHEET 1 OF 17 DSCC FORM 2233 APR 97 5962-E324-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-12223 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 2 DSCC FORM 2234 APR 97 1. S

4、COPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a c

5、hoice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 12223 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see

6、 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit

7、function as follows: Device type Generic number Circuit function 01 ISL70227SEH Dual operational amplifier 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation Q or V Certifica

8、tion and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X CDFP3-F10 10 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device c

9、lasses Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-12223 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 3 DSCC FORM 2234 APR

10、97 1.3 Absolute maximum ratings. 1/ Maximum supply voltage . 42 V 2/ Maximum differential input current 20 mA Maximum differential input voltage 0.5 V Min/max input voltage . -VS 0.5 V to +VS+ 0.5 V Max/min input current for input voltage +VSor -VS. 20 mA Output short circuit duration (1 output at a

11、 time) . Indefinite Power dissipation (PD) : At +25C 961 mW At +125C 192 mW Maximum junction temperature (TJ) +150C Lead temperature (soldering, 10 seconds) 300C Storage temperature range -65C to +150C Thermal resistance, junction-to-ambient (JA) . 130C/W 3/ Thermal resistance, junction-to-case (JC)

12、 20C/W 4/ 1.4 Recommended operating conditions. Supply voltage . 4.5 V to 30 V Split supply voltage (-VS, +VS) 2.25 V to 15 V Ambient operating temperature range (TA) . -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 50 300 rads(Si)/s) . 100 krads(Si) 5/ Maximum total

13、 dose available (dose rate 0.01 rad(Si)/s) . 50 krads(Si) 5/ Single event phenomenon (SEP) features: No Single event latchup (SEL) occurs at effective LET (see 4.4.4.2) 86 MeV/mg/cm26/ No Single event burnout (SEB) occur at effective LET (see 4.4.4.2) . 86 MeV/mg/cm26/ _ 1/ Stresses above the absolu

14、te maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ For application that operate in a heavy ion environment, the 42 V absolute maximum rating decreases to 36 V. 3/ JAis measured with the component mou

15、nted on a low effective thermal conductivity test board in free air. 4/ For JC, the case temperature location is the center of the exposed metal pad on the package underside. 5/ The device type 01 radiation end point limits for the noted parameters are guaranteed only for the conditions as specified

16、 in MIL-STD-883, method 1019, condition A to a maximum total dose of 100 krads(Si), and condition D to a maximum total dose of 50 krads(Si). 6/ Limits are characterized at initial qualification and after any design or process changes which may affect the SEP characteristics but, not production teste

17、d unless specified by the customer through the purchase order or contract. For more information on SEE test results, customers are requested to contact manufacturer. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A

18、 5962-12223 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. U

19、nless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuit

20、s. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or from

21、 the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of t

22、he documents cited in the solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of semiconductor Devices. (Copies of these documents are available online at http:/www.astm.org or from ASTM

23、International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes appl

24、icable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified in the device manufacturers Quality Management (

25、QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dime

26、nsions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Radiation exposure circuit. The radiation

27、exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRA

28、WING SIZE A 5962-12223 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 5 DSCC FORM 2234 APR 97 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation param

29、eter limits are as specified in table IA and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. Th

30、e part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product

31、 using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. 3.6 Certificate of

32、compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved so

33、urce of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall be provided with eac

34、h lot of microcircuits delivered to this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-12223 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. E

35、lectrical performance characteristics. Test Symbol Conditions 1/ 2/ -55C TA +125C Group A subgroups Device type Limits Unit VS= 15 V unless otherwise specified Min Max Offset voltage VOS 1 01 -75 75 V 2,3 -100 100 M,D,P,L,R 1 -100 100 Offset voltage drift TCVOS1,2,3 01 -1 1 V/C Input offset current

36、IOS1 01 -10 10 nA 2,3 -12 12 M,D,P,L,R 1 -25 25 Input bias current IIB1 01 -10 10 nA 2,3 -12 12 M,D,P,L,R 1 -25 25 Input voltage range VCM Guaranteed by CMRR 1 01 -13 13 V 2,3 -12 12 M,D,P,L,R 1 -12 12 Common mode rejection ratio CMRR VCM= -13 V to +13 V 1 01 115 dB VCM= -12 V to +12 V 2,3 115 M,D,P

37、,L,R 1 115 Power supply rejection ratio PSRR VS= 2.25 V to 5 V 1 01 110 dB VS= 3 V to 15 V 2,3 110 M,D,P,L,R 1 110 Open loop gain AOLVO= -13 V to +13 V, RL= 10 k to ground 1,2,3 01 1000 V/mV Output voltage high VOHRL= 10 k to ground 1 01 13.5 V 2,3 13.2 M,D,P,L,R 1 13.2 RL= 2 k to ground 1 13.4 2,3

38、13.1 M,D,P,L,R 1 13.1 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-12223 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 7 DSCC FORM 2234 APR 97 TABLE IA

39、. Electrical performance characteristics Continued. Test Symbol Conditions 1/ 2/ -55C TA +125C Group A subgroups Device type Limits Unit VS= 15 V unless otherwise specified Min Max Output voltage low VOLRL= 10 k to ground 1 01 -13.5 V 2,3 -13.2 M,D,P,L,R 1 -13.2 RL= 2 k to ground 1 -13.4 2,3 -13.1 M

40、,D,P,L,R 1 -13.1 Supply current/amplifier IS1 01 2.8 mA 2,3 3.7 M,D,P,L,R 1 3.7 Supply voltage range VSUPPLYGuaranteed by PSRR 1,2,3 01 2.25 15 V Transient response section Slew rate SR AV= 10 , RL= 2 k, VO= 4 VPP4 01 2.5 V/s 5,6 2.0 M,D,P,L,R 4 2.0 Positive overshoot +OS AV= 1, VOUT= 10 VPP, Rf= 0

41、, RL= 2 k to VCM4,5,6 01 35 % Negative overshoot -OS AV= 1, VOUT= 10 VPP, Rf= 0 , RL= 2 k to VCM4,5,6 01 35 % Small signal rise time, 10% to 90% of VOUTtrAV= -1, VOUT= 100 mVPP, Rf= Rg= 2 k, RL= 2 k to VCM9,10,11 01 100 ns Small signal fall time, 90% to 10% of VOUTtfAV= -1, VOUT= 100 mVPP, Rf= Rg= 2

42、 k, RL= 2 k to VCM9,10,11 01 100 ns 1/ Unless otherwise specified, VCM= 0 V, VO= 0 V, RL= open. 2/ RHA devices supplied to this drawing meet levels L and R of irradiation for condition A and levels P and L for condition D. However, devices are only tested at the R level in accordance with MIL-STD-88

43、3, method 1019, condition A and the L level in accordance with MIL-STD-883, method 1019, condition D (see 1.5 herein). When performing post irradiation electrical measurements for any RHA level, TA= +25C (see 1.5 herein). Provided by IHSNot for ResaleNo reproduction or networking permitted without l

44、icense from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-12223 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 8 DSCC FORM 2234 APR 97 TABLE IB. SEP test limits. 1/ 2/ 3/ Device type SEP Temperature (TA) VSEffective linear energy transfer (LET) 01 No SEL +125C 18 V 86 MeV/m

45、g/cm2No SEB +125C 18 V 86 MeV/mg/cm21/ For single event phenomena (SEP) test conditions, see 4.4.4.2 herein. 2/ Technology characterization and model verification supplemented by in-line data may be used in lieu of end of line testing. Test plan must be approved by the technical review board and qua

46、lifying activity. 3/ Limits are characterized at initial qualification and after any design or process changes which may affect the SEP characteristics but, not production tested unless specified by the customer through the purchase order or contract. 4. VERIFICATION 4.1 Sampling and inspection. For

47、 device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 4.2 Screening. For device cl

48、asses Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. 4.2.1 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under docume