DLA SMD-5962-13214-2013 MICROCIRCUIT LINEAR 19 MHz 40 V LOW POWER QUAD OPERATIONAL AMPLIFIER MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED REV SHEET REV SHEET 15 16 17 18 19 20 21 22 23 24 REV STATUS REV OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRC

2、UIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY CHARLES F. SAFFLE MICROCIRCUIT, LINEAR, 19 MHz, 40 V, LOW POWER, QUAD OPERATIONAL AMPLIFIER, MONOLITHIC SILICON DRAWING APPROVAL DATE 13-07-25 AMSC N/A RE

3、VISION LEVEL SIZE A CAGE CODE 67268 5962-13214 SHEET 1 OF 24 DSCC FORM 2233 APR 97 5962-E199-13 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-13214 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION L

4、EVEL SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q ) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identif

5、ying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 F 13214 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Cas

6、e outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). Th

7、e device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 ISL70444SEH Radiation hardened, 19 MHz, 40 V, low power, quad operational amplifier 1.2.3 Device class designator. The device class designator is a single letter identifying the product assuranc

8、e level as follows: Device class Device requirements documentation Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 14 Flat

9、 pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-13214 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVI

10、SION LEVEL SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Maximum supply voltage . 42 V Maximum differential input current . 20 mA Maximum differential input voltage 42 V or VS 0.5 V to +VS+ 0.5 V Minimum/maximum input voltage 42 V or VS 0.5 V to +VS+ 0.5 V Maximum/minimum current fo

11、r input voltage +VSor VS20 mA Electrostatic discharge (ESD) ratings: Human body model (HBM) . 2 kV Machine model (MM) 200 V Charged device model (CDM) 750 V Maximum junction temperature range (TJ) +150C Storage temperature range (TSTG) . -65C to +150C Thermal resistance, junction to case (JC) 9C/W 2

12、/ Thermal resistance, junction to ambient (JA) . 35C/W 3/ 1.4 Recommended operating conditions. Single supply voltage (VS) 3 V 10% to 36 V 10% Split rail supply voltage (VS) . 1.5 V 10% to 18 V 10% Ambient operating temperature range (TA) -55C to +125C 1.5 Radiation features. Maximum total dose avai

13、lable (dose rate = 50 300 rads(Si)/s) . 300 krads(Si) 4/ Maximum total dose available (dose rate 0.010 rad(Si)/s) 50 krads(Si) 4/ Single event phenomenon (SEP): No Single event latchup (SEL) occurs at effective LET (see 4.4.4.2) 86.4 MeV/mg/cm25/ No Single event burnout (SEB) occurs at effective LET

14、 (see 4.4.4.2) . 86.4 MeV/mg/cm25/ _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ For JC, the “case temperature” location is the center of the package underside. 3/

15、JAis measured with the component mounted on a low effective thermal conductivity test board in free air. 4/ Device radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 300 krads(Si)

16、, and condition D to a maximum total dose of 50 krads(Si). 5/ Limits are characterized at initial qualification and after any design or process changes which may affect the SEP characteristics but are not production tested unless specified by the customer through the purchase order or contract. See

17、manufacturers SEE test report for more information. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-13214 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 4 DSCC FORM 2234 APR 97 2. APPLIC

18、ABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTME

19、NT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-

20、103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/quicksearch.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government

21、 publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event P

22、henomena (SEP) from Heavy Ion Irradiation of semiconductor Devices. (Copies of these documents are available online at http:/www.astm.org or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). 2.3 Order of precedence. In the event of a conflict between

23、the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted witho

24、ut license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-13214 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 5 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-

25、38535 as specified herein, or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2

26、Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The t

27、erminal connections shall be as specified on figure 2. 3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical perfo

28、rmance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirem

29、ents. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where mar

30、king of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38

31、535. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to

32、supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-

33、PRF-38535 and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall be provided with each lot of microcircuits delivered to this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license

34、from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-13214 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA +125C Group A subgroups Device type Limits Unit VS= 18 V unles

35、s otherwise specified Min Max Offset voltage VOSVCM= 0 V 1 01 300 V VCM= +VSto -VS1,2,3 400 M,D,P,L,R,F 2/ 1 Input offset channel to channel match VOSVCM= +VS1,2,3 01 800 V M,D,P,L,R,F 2/ 1 VCM= -VS1,2,3 800 M,D,P,L,R,F 2/ 1 Input bias current IBVCM= 0 V 1,2,3 01 370 nA VCM= +VS370 M,D,P,L,R,F 2/ 1

36、650 VCM= -VS1,2,3 650 M,D,P,L,R,F 2/ 1 650 VCM= +VS 0.5 V 1,2,3 370 VCM= -VS+ 0.5 V 650 Input offset current IOSVCM= +VSto VS1,2,3 01 -17 +17 nA M,D,P,L,R,F 2/ 1 Common mode input voltage range VCMIR1,2,3 01 -VS+VSV M,D,P,L,R,F 2/ 1 Common mode rejection ratio CMRR VCM= -VSto +VS1,2,3 01 70 dB M,D,P

37、,L,R,F 2/ 1 VCM= +VS 0.5 V to 1,2,3 80 -VS+ 0.5 V M,D,P,L,R,F 2/ 1 Power supply rejection ratio PSRR -VS= -18 V, +VS= 0.5 V to 18 V, 1,2,3 01 88 dB +VS= 18 V, -VS= -0.5 V to -18 V M,D,P,L,R,F 2/ 1 Open loop gain AVOLRL= 10 k to ground 4,5,6 01 96 dB M,D,P,L,R,F 2/ 4 See footnotes at end of table. Pr

38、ovided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-13214 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics - Continued. T

39、est Symbol Conditions 1/ -55C TA +125C Group A subgroups Device type Limits Unit VS= 18 V unless otherwise specified Min Max Output voltage high VOHRL= no load 1,2,3 01 160 mV (VOUTto +VS) M,D,P,L,R,F 2/ 1 RL= 10 k 1,2,3 175 M,D,P,L,R,F 2/ 1 Output voltage low VOLRL= no load 1,2,3 01 160 mV (VOUTto

40、-VS) M,D,P,L,R,F 2/ 1 150 RL= 10 k 1,2,3 175 M,D,P,L,R,F 2/ 1 165 Output short circuit current ISCSourcing: VOUT= -18 V, 1,2,3 01 10 mA VIN= 0 V M,D,P,L,R,F 2/ 1 Sinking: VOUT= +18 V, 1,2,3 10 VIN= 0 V M,D,P,L,R,F 2/ 1 Supply current/amplifier ISUnity gain 1,2,3 01 2.4 mA M,D,P,L,R,F 2/ 1 Large sign

41、al slew rate SR AV= 1, RL= 10 k, VO= 10 VPP4,5,6 01 60 V/s M,D,P,L,R,F 2/ 4 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-13214 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990

42、 REVISION LEVEL SHEET 8 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ -55C TA +125C Group A subgroups Device type Limits Unit VS= 2.5 V unless otherwise specified Min Max Offset voltage VOSVCM= 0 V 1 01 300 V VCM= +VSto VS1,2,3 400 M,D,

43、P,L,R,F 2/ 1 Input offset channel to channel match VOSVCM= +VS1,2,3 01 800 V M,D,P,L,R,F 2/ 1 VCM= -VS1,2,3 800 M,D,P,L,R,F 2/ 1 Input bias current IBVCM= 0 V 1,2,3 01 340 nA VCM= +VS340 M,D,P,L,R,F 2/ 1 650 VCM= -VS1,2,3 580 M,D,P,L,R,F 2/ 1 650 VCM= +VS 0.5 V 1,2,3 340 VCM= -VS+ 0.5 V 580 Input of

44、fset voltage IOSVCM= +VSto VS1,2,3 01 -17 +17 nA M,D,P,L,R,F 2/ 1 Common mode input voltage range VCMIR1,2,3 01 -VS+VSV M,D,P,L,R,F 2/ 1 Common mode rejection ratio CMRR VCM= -VSto +VS1,2,3 01 70 dB M,D,P,L,R,F 2/ 1 VCM= +VS 0.5 V to 1,2,3 74 -VS+ 0.5 V M,D,P,L,R,F 2/ 1 Power supply rejection ratio

45、PSRR -VS= -2.5 V, +VS= 0.5 V to 2.5 V, 1,2,3 01 80 dB +VS= -2.5 V, -VS= -0.5 V to -2.5 V M,D,P,L,R,F 2/ 1 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-13214 DLA LAND AND MARI

46、TIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 9 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ -55C TA +125C Group A subgroups Device type Limits Unit VS= 2.5 V unless otherwise specified Min Max Open loop gain AVOLRL= 10 k to grou

47、nd 4,5,6 01 90 dB M,D,P,L,R,F 2/ 4 Output voltage high VOHRL= no load 1,2,3 01 85 mV (VOUTto +VS) M,D,P,L,R,F 2/ 1 RL= 10 k 1,2,3 105 M,D,P,L,R,F 2/ 1 RL= 600 1,2,3 400 M,D,P,L,R,F 2/ 1 Output voltage low VOLRL= no load 1,2,3 01 85 mV (VOUTto -VS) M,D,P,L,R,F 2/ 1 RL= 10 k 1,2,3 105 M,D,P,L,R,F 2/ 1

48、 RL= 600 1,2,3 400 M,D,P,L,R,F 2/ 1 Supply current/amplifier ISUnity gain 1 01 1.25 mA 2,3 1.8 M,D,P,L,R,F 2/ 1 1.8 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-13214 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISIO