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本文(DLA SMD-5962-84042 REV H-2009 MICROCIRCUIT DIGITAL HIGH-SPEED CMOS TRIPLE 3-INPUT NOR GATE MONOLITHIC SILICON.pdf)为本站会员(cleanass300)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-84042 REV H-2009 MICROCIRCUIT DIGITAL HIGH-SPEED CMOS TRIPLE 3-INPUT NOR GATE MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED C Inactivate for new design case outline C and case outline 2. Add vendor CAGE 27014 to case outline 2. Convert to military drawing format. Change code identification number to 67268. 87-10-26 M. A. Frye D Inactivate for new design case outline A.

2、Add vendor CAGE 27014 to case outline D. Change vendor CAGE 01295 part number for case outline B. Figure 2: Change positive logic to read Y = CBA . Editorial changes throughout. 88-03-10 M. A. Frye E Add vendor CAGE F8859. Add class V device criteria. Editorial changes throughout. ljs 99-11-04 Raymo

3、nd Monnin F Correct data limits in paragraph 1.3. Add case outline X. Add Table III, delta limits. Editorial changes throughout. ljs 00-06-20 Raymond Monnin G Correct table II. Update boilerplate to MIL-PRF-38535 requirements. jak 02-02-08 Thomas M. Hess H Add JEDEC Standard in paragraphs 2.2 and 4.

4、4.1c. Update boilerplate paragraphs to the current MIL-PRF-38535 requirements. - LTG 09-09-17 Thomas M. Hess CURRENT CAGE CODE 67268 REV SHET REV SHET REV STATUS REV H H H H H H H H H H H H OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 PMIC N/A PREPARED BY Marcia B. Kelleher DEFENSE SUPPLY CENTER COLUM

5、BUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY D. A. DiCenzo APPROVED BY Michael A. Frye MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, TRIPLE 3-INPUT NOR GATE, MONO

6、LITHIC SILICON DRAWING APPROVAL DATE 84-05-09 AMSC N/A REVISION LEVEL H SIZE A CAGE CODE 14933 84042 SHEET 1 OF 12 DSCC FORM 2233 APR 97 5962-E479-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 84042 DEFENSE S

7、UPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and l

8、ead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following examples. For device classes M and Q: 84042 01 C A Drawing number Device

9、type (see 1.2.2) Case outline(see 1.2.4) Lead finish(see 1.2.5)For device class V: 5962 - 84042 01 V X A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3) /Drawing number 1.2.1 RHA des

10、ignator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-)

11、indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54HC27 Triple 3-input NOR gate 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance

12、 level as listed below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q designators will not be included in the PIN and will not be marked on the device. Device class Device requirements documentation M Vendor self-certification to

13、 the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUI

14、T DRAWING SIZE A 84042 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style A GDFP5-F14 or CDF

15、P6-F14 14 Flat pack B GDFP4-F14 14 Flat pack C GDIP1-T14 or CDIP2-T14 14 Dual-in-line D GDFP1-F14 or CDFP2-F14 14 Flat pack 2 CQCC1-N20 20 Square leadless chip carrier X CDFP3-F14 14 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-3

16、8535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC+0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+0.5 V dc Input clamp diode current (IIK) . 20 mA Output clamp diode c

17、urrent (IOK) . 20 mA DC output current 25 mA DC VCCor GND current . 50 mA Storage temperature range (TSTG) . -65C to +150C Maximum power dissipation (PD): 500 mW 4/ Lead temperature (soldering, 10 seconds) +260C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) +

18、175C 5/ 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VCC) +2.0 V dc to +6.0 V dc Case operating temperature range (TC) -55C to +125C Input rise or fall time (tr, tf): VCC= 2.0 V 0 to 1,000 ns VCC= 4.5 V 0 to 500 ns VCC= 6.0 V 0 to 400 ns 1/ Stresses above the absolute maximum ra

19、ting may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to GND. 3/ The limits for the parameters speified herein shall apply over the full specified VCCrange and

20、 case temperature range of -55C to +125C. 4/ For TC= +100C to +125C, derate linearly at 12 mW/C. 5/ Maximum junction temperature shall not be exceeded except for allowable short circuit duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883. Provided by IHSNot for Resale

21、No reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 84042 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The

22、following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits Manufacturi

23、ng, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microc

24、ircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this do

25、cument to the extent specified herein. Unless otherwise specified, the issues of these documents cited in the solicitation or contract. ELECTRONIC INDUSTRIES ALLIANCE (EIA) JEDEC Standard No. 7-A - Standard for Description of 54/74HCXXXXX and 54/74HCTXXXXX High-Speed CMOS Devices. (Copies of these d

26、ocuments are available online at http:/www.jedec.org or from Electronic Industries Alliance, 2500 Wilson Boulevard, Arlington, VA 22201-3834). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes preceden

27、ce. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as

28、modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devi

29、ces and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case out

30、lines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching wave

31、forms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 84042 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 RE

32、VISION LEVEL H SHEET 5 DSCC FORM 2234 APR 97 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full c

33、ase operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the m

34、anufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for de

35、vice classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The complianc

36、e mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein).

37、For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall a

38、ffirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in

39、 MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to

40、 this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation s

41、hall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 36 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking per

42、mitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 84042 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specif

43、ied Group A subgroups Limits Unit Min Max High-level output voltage VOH VIN= VIHor VILIOH= -20 A VCC= 2.0 V 1, 2, 3 1.9 V VCC= 4.5 V 4.4 VCC= 6.0 V 5.9 VIN= VIHor VILIOH= -4.0 mA VCC= 4.5 V 1 3.98 2, 3 3.7 VIN= VIHor VILIOH= -5.2 mA VCC= 6.0 V 1 5.48 2, 3 5.2 Low-level output voltage VOLVIN= VIHor V

44、ILIOL= +20 A VCC= 2.0 V 1, 2, 3 0.1 V VCC= 4.5 V 0.1 VCC= 6.0 V 0.1 VIN= VIHor VILIOL= +4.0 mA VCC= 4.5 V 1 0.262, 3 0.4 VIN= VIHor VILIOL= +5.2 mA VCC= 6.0 V 1 0.26 2, 3 0.4 High level input voltage VIH2/ VCC= 2.0 V 1, 2, 3 1.5 V VCC= 4.5 V 3.15 VCC= 6.0 V 4.2 Low-level input voltage VIL2/ VCC= 2.0

45、 V 1, 2, 3 0.3 V VCC= 4.5 V 0.9 VCC= 6.0 V 1.2 Input capacitance CINTC= +25C, VCC= 2.0 V to 6.0 V See 4.4.1c 4 10.0 pF Power dissipation capacitance CPDSee 4.4.1c 4 28.0 pF Quiescent supply current ICCVIN= VCC or GND, IOUT= 0 A VCC= 6.0 V 1 2.0 A 2, 3 40.0 Input leakage current IINVCC= 6.0 V VIN= VC

46、Cor GND 1 0.1 A 2, 3 1.0 Functional tests See 4.4.1b 7, 8 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 84042 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVE

47、L H SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Group A subgroups Limits Unit Min Max Propagation delay time, high to low, low to high tPHL, tPLH3/ TC= +25C CL= 50 pF See figure 4 VCC

48、= 2.0 V 9 95 ns VCC= 4.5 V 19 VCC= 6.0 V 16 TC= -55C, +125C CL= 50 pF See figure 4 VCC= 2.0 V 10, 11 145 ns VCC= 4.5 V 29 VCC= 6.0 V 25 Transition time, high to low, low to high tTHL, tTLH4/ TC= +25C CL= 50 pF See figure 4 VCC= 2.0 V 9 75 ns VCC= 4.5 V 15 VCC= 6.0 V 13 TC= -55C, +125C CL= 50 pF See figure 4 VCC= 2.0 V 10, 11 110 ns VCC= 4.5 V 22 VCC= 6.0 V 19 1/ For a power supply of 5.0 V 10, the worst case output voltages (VOHand VOL) occur for HC at 4.5 V. Thus, the 4.5 V values should be used when designing with this supply. Worst cases VIHand

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