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本文(DLA SMD-5962-84095 REV D-2009 MICROCIRCUIT DIGITAL HIGH-SPEED CMOS 8-BIT PARALLEL-IN SERIAL-OUT SHIFT REGISTER MONOLITHIC SILICON.pdf)为本站会员(Iclinic170)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-84095 REV D-2009 MICROCIRCUIT DIGITAL HIGH-SPEED CMOS 8-BIT PARALLEL-IN SERIAL-OUT SHIFT REGISTER MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add vendors FSCM 27014, 18714, and 04713. Changes to Recommended operating conditions, Table I and II. 86-02-05 N. A. Hauck B Add vendor CAGE F8859. Add device class V criteria. Add case outline X. Update boilerplate. Correct data limits in parag

2、raph 1.3. Add Table III. Editorial changes throughout. -les 00-07-19 Raymond Monnin C Correct table II. Update boilerplate to MIL-PRF- 38535 requirements. jak 02-02-04 Thomas M. Hess D Change address. Add JEDEC Standard 7-A reference in paragraphs 2.2 and 4.4.1c. Update boilerplate paragraphs to the

3、 current requirements in as specified in MIL-PRF-38535. - jak 09-08-21 Thomas M. Hess CURRENT CAGE CODE 67268 REV SHEET REV D D D D D D SHEET 15 16 17 18 19 20 REV STATUS REV D D D D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Greg A. Pitz DEFENSE SUPPLY

4、 CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY D. A. DiCenzo COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY N. A. Hauck MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, 8-BIT PARALLEL-IN/SERIAL-OUT SHIFT REGISTER, AND AGENCIES OF THE DE

5、PARTMENT OF DEFENSE DRAWING APPROVAL DATE 84-10-22 MONOLITHIC SILICON AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 14933 84095 SHEET 1 OF 20 DSCC FORM 2233 APR 97 5962-E426-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWIN

6、G SIZE A 84095 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choic

7、e of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following examples. For device classes M and Q: 84095 01 E

8、A_ Drawing number Device type Case outline Lead finish (see 1.2.2) (see 1.2.4) (see 1.2.5) For device class V: 5962 - 84095 01 V X A Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3

9、) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropr

10、iate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54HC165 8-bit parallel-In serial-Out shift register 1.2.3 Device class designator. The device class designator

11、 is a single letter identifying the product assurance level as listed below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q designators will not be included in the PIN and will not be marked on the device. Device class Device requ

12、irements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 Provided by IHSNot for ResaleNo reproduction or networking permit

13、ted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 84095 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive

14、designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line F GDFP2-F16 or CDFP3-F16 16 Flat pack 2 CQCC1-N20 20 Square leadless chip carrier X CDFP4-F16 16 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appe

15、ndix A for device class M. 1.3 Absolute maximum ratings. 1/, 2/, 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC+0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+0.5 V dc Input clamp current (IIK) . 20 mA Output clamp current (IOK) 20 mA C

16、ontinuous output current 25 mA Continuous current through VCCor GND . 50 mA Storage temperature range (TSTG) . -65C to +150C Maximum power dissipation (PD): 500 mW 4/ Lead temperature (soldering, 10 seconds) +260C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ)

17、 +175C 5/ 1.4 Recommended operating conditions. 2/, 3/ Supply voltage range (VCC) +2.0 V dc to +6.0 V dc Case operating temperature range (TC) -55C to +125C Input rise or fall time (tr, tf): VCC= 2.0 V 0 to 1000 ns VCC= 4.5 V 0 to 500 ns VCC= 6.0 V 0 to 400 ns 1/ Stresses above the absolute maximum

18、rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange

19、and case temperature range of -55C to +125C. 4/ For TC= +100C to +125C, derate linearly at 12 mW/C. 5/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883. Provided by IHSNot for ResaleNo re

20、production or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 84095 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The follo

21、wing specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing,

22、General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircu

23、it Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(

24、s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. ELECTRONIC INDUSTRIES ALLIANCE (EIA) JEDEC Standard No. 7-A - Standard for Description of 54/74HCXXXX and 54/74HCTXXXX High-Speed

25、 CMOS Devices (Copies of these documents are available online at http:/www.eia.org or from the Electronic Industries Alliance, 2500 Wilson Boulevard, Arlington, VA 22201-3834.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the t

26、ext of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38

27、535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendi

28、x A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.

29、 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SI

30、ZE A 84095 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circui

31、t. The switching waveforms and test circuit shall be as specified in figure 4. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table

32、 I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed

33、 in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator sha

34、ll still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as requir

35、ed in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of

36、 this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source

37、of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as requ

38、ired for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 her

39、ein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required docum

40、entation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 40 (see MIL-PRF-38535, appendix A). Provided by IHSNot for Resal

41、eNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 84095 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Test conditions 1/ -55

42、C TC +125C Group A subgroups Limits Unit unless otherwise specified Min Max High level output voltage VOHVIN= VIHminimum or VILmaximum IOH= -20 A VCC= 2.0 V 1, 2, 3 1.9 V VCC= 4.5 V 4.4 VCC= 6.0 V 5.9 VIN= VIHminimum or VILmaximum IOH= -4.0 mA VCC= 4.5 V 1 3.98 2, 3 3.7 VIN= VIHminimum or VILmaximum

43、 IOH= -5.2 mA VCC= 6.0 V 1 5.48 2, 3 5.2 Low level output voltage VOLVIN= VIHminimum or VILmaximum IOL= 20 A VCC= 2.0 V 1, 2, 3 0.1 V VCC= 4.5 V 0.1 VCC= 6.0 V 0.1 VIN= VIHminimum or VILmaximum IOL= 4.0 mA VCC= 4.5 V 1 0.26 2, 3 0.4 VIN= VIHminimum or VILmaximum IOL= 5.2 mA VCC= 6.0 V 1 0.26 2, 3 0.

44、4 High level input voltage VIH 2/ VCC= 2.0 V 1, 2, 3 1.5 V VCC= 4.5 V 3.15 VCC= 6.0 V 4.2 Low level input voltage VIL 2/ VCC= 2.0 V 1, 2, 3 0.3 V VCC= 4.5 V 0.9 VCC= 6.0 V 1.2 Input capacitance CINVCC= 2 V to 6 V, TC= +25C See 4.4.1c 4 10.0 pF Quiescent supply current ICCVIN= VCC or GND VCC= 6.0 V,

45、IO= 0 A 1 8.0 A 2, 3 160.0See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 84095 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 7 DSCC FORM 2234 APR 9

46、7 TABLE I. Electrical performance characteristics - Continued. Test Symbol Test conditions 1/ -55C TC +125C Group A subgroups Limits Unit unless otherwise specified Min Max Input leakage current IINVCC= 6.0 V, VIN= VCCor GND 1 0.1 A 2, 3 1.0 Functional tests See 4.4.1b 7, 8 Power dissipation capacit

47、ance CPDSee 4.4.1c 4 75.0 pF Propagation delay time, H to QHor QHtPHL1, tPLH1 3/ TC= +25C CL = 50 pF See figure 4 VCC= 2.0 V 9 150 ns VCC= 4.5 V 30 VCC= 6.0 V 26 TC= -55C, +125C CL= 50 pF See figure 4 VCC= 2.0 V 10, 11 225 ns VCC= 4.5 V 45 VCC= 6.0 V 38 Propagation delay, (serial shift/parallel load

48、) SH/LD to QHor QHtPHL2, tPLH2 3/ TC= +25C CL= 50 pF See figure 4 VCC= 2.0 V 9 165 ns VCC= 4.5 V 33 VCC= 6.0 V 28 TC= -55C, +125C CL= 50 pF See figure 4 VCC= 2.0 V 10, 11 250 ns VCC= 4.5 V 50 VCC= 6.0 V 43 Propagation delay time, CLK to QHor QHtPHL3, tPLH3 3/ TC= +25C CL= 50 pF See figure 4 VCC= 2.0 V 9 150 ns VCC= 4.5 V 30 VCC= 6.0 V 26 TC= -55C, +125C CL= 50 pF See figure 4 VCC= 2.0 V 10, 11 225 ns VCC= 4.5 V 45 VCC= 6.0 V 38

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