DLA SMD-5962-84153 REV C-2009 MICROCIRCUIT DIGITAL LOW-POWER SCHOTTKY TTL MAGNITUDE COMPARATOR MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Correct generic number error in para 1.2.1. Update to reflect latest changes in format and requirements. Editorial changes throughout. -les 03-06-17 Raymond Monnin B Add class “V“ to document. Update to reflect latest changes in format and requir

2、ements. Editorial changes throughout. -les 03-11-13 Raymond Monnin C Update drawing to current requirements. Editorial changes throughout. - gap 09-07-15 Charles F. Saffle CURRENT CAGE CODE 67268 The original first sheet of this drawing has been replaced. REV SHET REV SHET REV STATUS REV C C C C C C

3、 C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 PMIC N/A PREPARED BY David W. Queenan DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY

4、D. A. DiCenzo APPROVED BY N. A. Hauck MICROCIRCUIT, DIGITAL, LOW-POWER SCHOTTKY TTL, MAGNITUDE COMPARATOR MONOLITHIC SILICON DRAWING APPROVAL DATE 85-07-08 AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 14933 84153 SHEET 1 OF 10 DSCC FORM 2233 APR 97 5962-E174-09 Provided by IHSNot for ResaleNo reproduc

5、tion or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 84153 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of hig

6、h reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN.

7、The PIN is as shown in the following examples. For device classes M and Q: 84153 01 R X Drawing number Device type (see 1.2.2)Case outline (see 1.2.4)Lead finish (see 1.2.5)For device class V: 5962 - 84153 01 V R X Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Devi

8、ce class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet th

9、e MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54LS688 8-bit magnitude compar

10、ator with output enable 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as listed below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q designators will not be

11、included in the PIN and will not be marked on the device. Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification

12、to MIL-PRF-38535 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 84153 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outlin

13、e(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style R GDIP1-T20 or CDIP2-T20 20 dual-in-line package S GDFP2-F20 or CDFP3-F20 20 flat package 2 CQCC1-N20 20 square chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-

14、PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ Supply voltage . -0.5 V dc to +7.0 V dc Input voltage -1.5 V dc at -18 mA to +7.0 V dc Storage temperature range -65C to +150C Maximum power dissipation (PD) 2/ . 357.5 mW Lead temp

15、erature (soldering, 10 seconds) +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) +175C 1.4 Recommended operating conditions. Supply voltage range (VCC) . 4.5 V dc minimim to 5.5 V dc maximum Minimum high level input voltage (VIH) 2.0 V dc Maximum low level

16、 input voltage (VIL) . 0.7 V dc Case operating temperature range (TC) -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise speci

17、fied, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Int

18、erface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardizat

19、ion Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes appli

20、cable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Must withstand the added PDdue to short circ

21、uit test e.g., IOS.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 84153 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirement

22、s. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. T

23、he individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38

24、535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth

25、table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parame

26、ter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part

27、 shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using

28、 this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and

29、 V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in or

30、der to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA pri

31、or to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance.

32、A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-

33、VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers fa

34、cility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 11 (see MIL-PRF-38535, appen

35、dix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 84153 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics

36、. Test Symbol Conditions -55C TC+125C Group A subgroups Limits Unit unless otherwise specified Min Max High level output voltage VOHVCC= 4.5 V, IOH= -0.4 mA 1, 2, 3 2.5 V Low level output voltage VOLVCC= 4.5 V, IOL= 12 mA 1, 2, 3 0.4 V Input clamp voltage VIC VCC= 4.5 V, IIN= -18 mA 1 -1.5 V High le

37、vel input current IIH1VCC= 5.5 V, VIN= 2.7 V 1, 2, 3 20 A IIH2VCC= 5.5 V, VIN= 7.0 V 1, 2, 3 100 A Low level input current IILVCC= 5.5 V, VIN= 0.4 V 1, 2, 3 -0.2 mA Short circuit output current IOS VCC= 5.5 V, VOUT= 0.0 V 1/ 1, 2, 3 -20 -130 mA Supply current ICC VCC= 5.5 V 2/ 1, 2, 3 65 mA High lev

38、el output current IOH 1, 2, 3 -0.4 mA Low level output current IOL 1, 2, 3 12 mA Propagation delay time, P to Q P tPLH1VCC= 5.0 V, RL= 667 5%, CL= 50 pF 10% 9 18 ns 10, 11 26 tPHL19 23 ns 11 33 Propagation delay time, Q to Q P tPLH218 ns 10, 11 26 tPHL29 23 ns 11 33 Propagation delay time, G to Q P

39、tPLH318 ns 10, 11 26 tPHL39 20 ns 10, 11 28 ns 1/ Not more than one output should be shorted at a time, and the duration of the short-circuit condition should not exceed one second. 2/ ICCis measured with G grounded, all other inputs at 4.5 V, and all outputs open. Provided by IHSNot for ResaleNo re

40、production or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 84153 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 Device type 01 Case outlines R and S 2 Terminal number Terminal symbol 1 G G 2 P0 P0 3 Q0

41、 Q0 4 P1 P1 5 Q1 Q1 6 P2 P2 7 Q2 Q2 8 P3 P3 9 Q3 Q3 10 GND GND 11 P4 P4 12 Q4 Q4 13 P5 P5 14 Q5 Q5 15 P6 P6 16 Q6 Q6 17 P7 P7 18 Q7 Q7 19 Q P Q P 20 VCCVCCFIGURE 1. Terminal connections. INPUTS OUTPUT DATA ENABLE Q P P, Q G P = Q L L P Q L H P Q L H X H H H = High voltage level. L = Low voltage leve

42、l. X = Irelevant. FIGURE 2. Truth table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 84153 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 FIGURE 3. Logi

43、c diagram. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 84153 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 8 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection.

44、 For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, samp

45、ling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M

46、, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be ma

47、intained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015

48、. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and s