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本文(DLA SMD-5962-85127 REV J-2003 MICROCIRCUIT LINEAR MICROPROCESSOR COMPATIBLE 12-BIT ANALOG-TO-DIGITAL CONVERTERS MONOLITHIC SILICON《硅单块 12比特模拟数字转换器 微处理器可兼容直线型微型电路》.pdf)为本站会员(wealthynice100)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-85127 REV J-2003 MICROCIRCUIT LINEAR MICROPROCESSOR COMPATIBLE 12-BIT ANALOG-TO-DIGITAL CONVERTERS MONOLITHIC SILICON《硅单块 12比特模拟数字转换器 微处理器可兼容直线型微型电路》.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add two packages, C-5 and C-4. Make changes to table I, and throughout. For case X, the dimensions have been changed and figure 2 has been replaced with D-10 configuration. Inactivate devices 01XX and 02XX for new design. Use M38510 device. Add a

2、 truth table. 90-01-24 M. A. Frye B Add device types 05, 06, 07, and 08. Add vendors CAGES 1ES66, OH9K9, and 33256. Editorial changes throughout. 93-03-15 M. A. Frye C Add class V devices. Add Z package. Editorial changes throughout. 97-04-15 R. Monnin D Changes in accordance with NOR 5962-R368-97.

3、drw 97-06-23 Raymond Monnin E Change descriptive designator for case outline Z from GDFP2-F28 to CDFP3-F28. Editorial changes throughout. Redrawn. - drw 99-12-30 Raymond Monnin F Sheet 7, table I, VILtest, change max limit from 0.8 V to 0.8 V. - drw 00-03-01 Raymond Monnin G Add radiation features a

4、nd post irradiation limits. - drw 01-05-16 Raymond Monnin H Add device type 01 to the post irradiation limits in table I. - drw 02-07-10 Raymond Monnin J Sheet 6, table I, Integral linearity error test (ILE), post irradiation limits for device types 01 and 02, subgroup 1, change from -1.0 LSB min to

5、 -1.5 LSB min and from 1.0 LSB max to 1.5 LSB max. 03-04-25 Raymond Monnin THE ORIGINAL FIRST PAGE OF THIS DRAWING HAS BEEN REPLACED REV SHET REV H H H H H H SHEET 15 16 17 18 19 20 REV STATUS REV J H H H H J H H H H H H H H OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Sandr

6、a B. Rooney DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Charles E. Besore COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A. Frye MICROCIRCUIT, LINEAR, MICROPROCESSOR COMPATIBLE, 12-BIT ANALOG-TO-DIGITAL

7、 AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 86-07-10 CONVERTERS, MONOLITHIC SILICON AMSC N/A REVISION LEVEL J SIZE A CAGE CODE 67268 5962-85127 SHEET 1 OF 20 DSCC FORM 2233 APR 97 5962-E297-03 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provi

8、ded by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-85127 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL H SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product

9、assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) l

10、evels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following examples. For device classes M and Q: 5962 - 85127 01 X X Federal stock class designator RHA designator (see 1.2.1) Devicetype (see 1.2.2) Caseoutline (see 1.2.4) Leadfinish (see 1.2.5) / / Drawing number For device class

11、V: 5962 - 85127 01 V X X Federal stock class designator RHA designator (see 1.2.1) Devicetype (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 spe

12、cified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device types. The device types identify the

13、 circuit function as follows: Device type Generic number Circuit function 01 574AU Monolithic, high performance, 12-bit A/D converter with microprocessor interface 02 574AT Monolithic, medium performance, 12-bit A/D converter with icroprocessor interface03 574AU Multi-chip, high performance, 12-bit

14、A/D converter with microprocessor interface 04 574AT Multi-chip, medium performance, 12-bit A/D converter with icroprocessor interface05 574ZA Monolithic, high performance, low power, 12-bit A/D converter with microprocessor interface 06 574ZB Monolithic, medium performance, low power, 12-bit A/D co

15、nverter with microprocessor interface07 574AU Monolithic, high performance, low power, 12-bit A/D converter with microprocessor interface 08 574AT Monolithic, medium performance, low power, 12-bit A/D converter with microprocessor interfaceProvided by IHSNot for ResaleNo reproduction or networking p

16、ermitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-85127 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL H SHEET 3 DSCC FORM 2234 APR 97 1.2.3 Device class designator. The device class designator is a single letter identifying the product assuranc

17、e level as listed below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q designators will not be included in the PIN and will not be marked on the device. Device class Device requirements documentation M Vendor self-certification t

18、o the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outlines. The case outlines are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive d

19、esignator Terminals Package style X GDIP1-T28 or CDIP2-T28 28 dual-in-line Y CQCC1-N44 44 square leadless chip carrier Z CDFP3-F28 28 flat pack 3 CQCC1-N28 28 square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,

20、 appendix A for device class M. 1.3 Absolute maximum ratings. 1/ VCCto digital common 0 to +16.5 V dc VEEto digital common 0 to -16.5 V dc VLOGto digital common 0 to +7 V dc Analog to digital common: Device types 01, 02, 03, 04 +1 V dc Device types 05, 06, 07, 08 -0.5 V dc to +1 V dc Control inputs

21、(CE, CS, AO, 12/8, R/C) to digital common -0.5 V dc to VLOG+0.5 V dc Analog inputs (REF IN, BIP OFF, 10 VIN) to analog common VEEto VCC20 VINanalog input voltage to analog common. +24 V dc VREF OUT. Indefinite short to common, 10 ms short to VCCPower dissipation at 75C: Device types 01, 02, 05, 06,

22、07, 08 1,000 mW 2/ Device types 03, 04 2,080 mW 2/ Lead temperature (soldering, 10 seconds) +300C Storage temperature -65C to +150C Thermal resistance, junction-to-ambient (JA): Cases X and 3 70C/W Case Y. 38C/W Case Z. 60C/W Thermal resistance, junction-to-case (JC). See MIL-STD-1835 Junction tempe

23、rature (TJ) +175C 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ For cases X and 3, derate linearly above TA= +75C at 20.8 mW/C. For cases Y, derate linearly above TA=

24、 +75C at 22.7 mW/C. For cases Z, derate linearly above TA= +115C at 17 mW/C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-85127 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL H SHE

25、ET 4 DSCC FORM 2234 APR 97 1.4 Recommended operating conditions. Power supply Operating voltage range: Positive supply (VLOG) +4.5 V dc to +5.5 V dc Positive supply (VCC) . +11.4 V dc to +16.5 V dc Negative supply (VEE) -11.4 V dc to -16.5 V dc Ambient operating temperature range. -55C to +125C 1.5

26、Radiation features. Maximum total dose available (dose rate = 50 300 rad(Si)/s) 100 Krads (Si) 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless othe

27、rwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General

28、Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. HANDBOOKS DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawi

29、ngs. (Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and

30、the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shal

31、l be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in acco

32、rdance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-85127 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000

33、REVISION LEVEL H SHEET 5 DSCC FORM 2234 APR 97 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outl

34、ines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Block or logic diagrams. The block or logic diagrams shall be as speci

35、fied on figure 3. 3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradi

36、ation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements

37、 shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked as listed in MIL-HDBK-103. For packages where marking of the e

38、ntire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking

39、for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, a

40、ppendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a

41、 manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V,

42、the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall

43、be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in MIL-PRF-38535, ap

44、pendix A. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the review

45、er. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 81 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT

46、DRAWING SIZE A 5962-85127 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL J SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TA +125C VCC= +15 V, VLOG= +5 V, VEE= -15 V 1/ Group A subgroups Device type Limits Unit unle

47、ss otherwise specified Min Max Power supply current ILOG 1, 2, 3 01, 02, 40 mA From VLOG03, 04 M, D, P, L, R 1 01, 02 40 1, 2, 3 05, 06, 07, 08 1 Power supply current ICC 1, 2, 3 01, 02 5 mA From VCCM, D, P, L, R 1 01, 02 5 1, 2, 3 03, 04 15 05, 06, 07, 08 9 Power supply current IEE 1, 2, 3 01, 02,

48、-30 mA 03, 04 From VEEM, D, P, L, R 1 01, 02 -30 1, 2, 3 05, 06, 07, 08 0 Resolution 1, 2, 3 All 12 Bits Integral linearity error ILE 1 All -0.5 0.5 LSB 2, 3 -1.0 1.0 M, D, P, L, R 1 01, 02 -1.5 1.5 Differential linearity error (minimum resolution for DLE 1 All 12 Bits which no missing codes guarant

49、eed) 2/ 2, 3 12 Unipolar offset voltage error VIO TA = +25C 1 All -2.0 2.0 LSB M, D, P, L, R 1 01, 02 -3.0 3.0 12 01 -1.0 1.0 Unipolar offset drift VIO Using internal reference 1, 2, 3 3/ 01, 02 -1.0 1.0 LSB 2/ T 2, 3 03, 04 05, 06 07, 08 Bipolar offset voltage error BZ TA = +25C 1 All -4.0 4.0 LSB M, D, P, L

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