ImageVerifierCode 换一换
格式:PDF , 页数:12 ,大小:130.65KB ,
资源ID:698802      下载积分:10000 积分
快捷下载
登录下载
邮箱/手机:
温馨提示:
如需开发票,请勿充值!快捷下载时,用户名和密码都是您填写的邮箱或者手机号,方便查询和重复下载(系统自动生成)。
如填写123,账号就是123,密码也是123。
特别说明:
请自助下载,系统不会自动发送文件的哦; 如果您已付费,想二次下载,请登录后访问:我的下载记录
支付方式: 支付宝扫码支付 微信扫码支付   
注意:如需开发票,请勿充值!
验证码:   换一换

加入VIP,免费下载
 

温馨提示:由于个人手机设置不同,如果发现不能下载,请复制以下地址【http://www.mydoc123.com/d-698802.html】到电脑端继续下载(重复下载不扣费)。

已注册用户请登录:
账号:
密码:
验证码:   换一换
  忘记密码?
三方登录: 微信登录  

下载须知

1: 本站所有资源如无特殊说明,都需要本地电脑安装OFFICE2007和PDF阅读器。
2: 试题试卷类文档,如果标题没有明确说明有答案则都视为没有答案,请知晓。
3: 文件的所有权益归上传用户所有。
4. 未经权益所有人同意不得将文件中的内容挪作商业或盈利用途。
5. 本站仅提供交流平台,并不能对任何下载内容负责。
6. 下载文件中如有侵权或不适当内容,请与我们联系,我们立即纠正。
7. 本站不保证下载资源的准确性、安全性和完整性, 同时也不承担用户因使用这些下载资源对自己和他人造成任何形式的伤害或损失。

版权提示 | 免责声明

本文(DLA SMD-5962-85514 REV J-2011 MICROCIRCUIT LINEAR +5 VOLT ADJUSTABLE PRECISION VOLTAGE REFERENCE MONOLITHIC SILICON.pdf)为本站会员(周芸)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-85514 REV J-2011 MICROCIRCUIT LINEAR +5 VOLT ADJUSTABLE PRECISION VOLTAGE REFERENCE MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Change to military drawing format. Changes to output adjustment range. Add conditions for load regulation test at -55C and +125C. Change group A subgroups for load regulation and line regulation tests, and output voltage temperature coefficient.

2、Add vendor CAGE 64155. Editorial changes throughout. 88-03-17 M. A. FRYE B Add vendor CAGE 07933. Add vendor CAGE 54186. Add case outline 2. Change output voltage temperature coefficient test limits. 89-04-12 M. A. FRYE C Add device type 02. Editorial changes throughout. Delete vendors CAGEs 54186 a

3、nd 07933. Add vendor CAGE 1ES66. 92-11-25 M. A. FRYE D Add class V devices. Replace CAGE 06665 with 24355. Add case outline H and TABLE IIB. Make changes to 1.2.2 and TABLE II. 97-06-10 R. MONNIN E Add radiation hardness assurance requirements. - ro 98-08-07 R. MONNIN F Make changes to 1.5, table II

4、A, 4.4.1b, and output voltage temperature coefficient test as specified in table I. - ro 00-01-21 R. MONNIN G Add device types 03 and 04. Make changes 1.2.2 and to the output voltage noise test as specified under TABLE I. - ro 01-02-07 R. MONNIN H Drawing updated to reflect current requirements. -rr

5、p 05-12-07 R. MONNIN J Removed “RADIATION HARDENED” from title block. Add device type 05 tested at low dose rate. Make change to paragraphs 1.2.2, 1.5, and 3.2.3. Make changes to footnotes 2/ and 3/ as specified under Table I. Removed figure 2. Make change to paragraph 4.4.4.1. Delete paragraphs 4.4

6、.4.1.1 and 4.4.4.2. -rrp 11-11-29 C. SAFFLE CURRENT CAGE CODE 67268 THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHEET REV SHEET REV STATUS REV J J J J J J J J J J OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 PMIC N/A PREPARED BY DONALD OSBORNE DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3

7、990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY DANIEL A. DiCENZO APPROVED BY N. A. HAUCK MICROCIRCUIT, LINEAR, +5 VOLT ADJUSTABLE PRECISION VOLTAGE REFERENCE, MONOLITHIC SIL

8、ICON DRAWING APPROVAL DATE 86-03-08 AMSC N/A REVISION LEVEL J SIZE A CAGE CODE 14933 85514 SHEET 1 OF 10 DSCC FORM 2233 APR 97 5962-E020-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 85514 DLA LAND AND MARITI

9、ME COLUMBUS, OHIO 43218-3990 REVISION LEVEL J SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are av

10、ailable and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following examples. For device classes M and Q: 85514 01 G A Drawing number Device type (see 1.2.1) Ca

11、se outline (see 1.2.2) Lead finish (see 1.2.3) For device class V: 5962 R 85514 01 V G A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Dev

12、ice classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a

13、non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function Output voltage noise 01 REF02A Precision reference +5-volt 18 VP-Padjustable output 02 REF02 Precision reference +5-volt 18 VP-Padjustable output 03 REF02A P

14、recision reference +5-volt 100 VP-Padjustable output 04 REF02 Precision reference +5-volt 100 VP-Padjustable output 05 REF02A Radiation hardened, 18 VP-PPrecision reference +5-volt adjustable output Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STA

15、NDARD MICROCIRCUIT DRAWING SIZE A 85514 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL J SHEET 3 DSCC FORM 2234 APR 97 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as listed below. Since the device class designa

16、tor has been added after the original issuance of this drawing, device classes M and Q designators will not be included in the PIN and will not be marked on the device. Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN c

17、lass level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style G MACY1-X8 8 Can

18、H GDFP1-F10 or CDFP2-F10 10 Flat pack P GDIP1-T8 or CDIP2-T8 8 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ Inp

19、ut voltage (VIN) 40 V dc Power dissipation (PD) . 500 mW 2/ Output short circuit duration Indefinite Storage temperature . -65C to +150C Lead temperature (soldering, 10 seconds) . +300C Junction temperature (TJ) . +150C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 1.4 Recommended ope

20、rating conditions. Ambient operating temperature range (TA) -55C to +125C 1.5 Radiation features: Device type 01: Maximum total dose available (dose rate = 50 300 rads(Si)/s) . 100 krads (Si) 3/ Device type 05: Maximum total dose available (dose rate 10 mrads(Si)/s) 50 krads (Si) 4/ 1/ Stresses abov

21、e the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Derate 7.1 mW/C above +80C for the “G“ and “H“ packages, 6.6 mW/C above +75C for the “P“ package, and 7.8 mW/C above +72C for the “2“ pa

22、ckage. 3/ Device type 01 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A for device type 01. 4/ For d

23、evice type 05, radiation end point limits for the noted parameters are guaranteed for the conditions specified in MIL-STD-883, method 1019, condition D. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 85514 DLA LA

24、ND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL J SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise

25、specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835

26、- Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standar

27、dization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes

28、applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Manag

29、ement (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construct

30、ion, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.

31、2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upo

32、n request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range

33、. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be m

34、arked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be

35、in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 85514 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-

36、3990 REVISION LEVEL J SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Quiescent supply current ISYNo load 1 All 1.4 mA 2,3 2.0 M,D,P,L,R 2/ 3/ 1 01 1.4

37、M,D,P,L 2/ 3/ 1 05 1.4 Output adjustment 4/ range VTRIMRP= 10 k, TA= +25C 1 All 3.0 % Output voltage VOIL= 0 mA 1 01,03,05 4.985 5.015 V 02,04 4.975 5.025 2,3 01,03,05 4.978 5.022 02,04 4.953 5.047 M,D,P,L,R 2/ 3/ 1 01 4.975 5.025 M,D,P,L 2/ 3/ 1 05 4.975 5.025 Short circuit current 4/ IOSVO= 0 V, T

38、A= +25C 1 All +15 +60 mA Sink current 4/ ISTA= +25C 1 All -0.3 mA Load regulation LD reg IL= 0 mA to 10 mA 5/ 1 All 0.01 %/mA M,D,P,L,R 2/ 3/ 1 01 0.015 M,D,P,L 2/ 3/ 1 05 0.015 IL= 0 mA to 8 mA 5/ 2,3 01,03,05 0.012 02,04 0.015 Line regulation LN reg VIN= 8 V to 33 V 5/ 1 01,03,05 0.010 %/V 02,04 0

39、.012 2,3 All 0.015 M,D,P,L,R 2/ 3/ 1 01 0.030 M,D,P,L 2/ 3/ 1 05 0.030 Load current ILTA= +25C 4/ 6/ 1 All 10 mA Output voltage noise enp-p 0.1 Hz to 10 Hz 4/ 4 01,02,05 18 VP-P03,04 100 Output voltage TCVO4/ 7/ 8 01,03,05 8.5 ppm/C temperature coefficient 02,04 25 See footnotes at end of table. Pro

40、vided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 85514 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL J SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics continued. 1/ VIN=

41、15 V. 2/ Device type 01 supplied to this drawing has been characterized through all levels M, D, P, L, R of irradiation. Device type 05 supplied to this drawing has been characterized through all levels P and L of irradiation. However, device type 01 is only tested at the “R” level and device type 0

42、5 is only tested at the “L” level. Pre and Post irradiation values are identical unless otherwise specified in Table I. When performing post irradiation electrical measurements for any RHA level, TA= +25C. 3/ For device type 01, this part may be dose rate sensitive in a space environment and may dem

43、onstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method 1019, condition A for device type 01 and condition D for device type 05. Device type 05, has been tested at low dose rate. 4/ This para

44、meter is not tested to post irradiation. 5/ Line and load regulation specifications include the effect of self heating. 6/ Minimum of 10 mA load current guaranteed by load regulation test. 7/ TCVO= (VMAX- VMIN) / 5 V x (-55C to +125C) x (1 x 106) / 180C. 3.5.1 Certification/compliance mark. The cert

45、ification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required fro

46、m a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate

47、 of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535,

48、 appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, D

copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
备案/许可证编号:苏ICP备17064731号-1