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本文(DLA SMD-5962-86013 REV E-2009 MICROCIRCUIT DIGITAL HIGH-SPEED CMOS 4-BIT MAGNITUDE COMPARATOR MONOLITHIC SILICON.pdf)为本站会员(王申宇)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-86013 REV E-2009 MICROCIRCUIT DIGITAL HIGH-SPEED CMOS 4-BIT MAGNITUDE COMPARATOR MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED B Add vendor CAGE F8859. Add device class V criteria. Editorial changes throughout. Jak 99-11-05 Monica L. Poelking C Add table III, delta limits. Update boilerplate to the latest MIL-PRF-38535 requirements. jak 01-03-09 Thomas M. Hess D Correct ta

2、ble II. Correct boilerplate paragraphs. jak. 02-01-25 Thomas M. Hess E Add JEDEC Standard in paragraphs 2.2 and 4.4.1c. Update boilerplate paragraphs to the current MIL-PRF-38535 requirements. - LTG 09-09-14 Thomas M. Hess CURRENT CAGE CODE 67268 REV SHET REV SHET REV STATUS REV E E E E E E E E E E

3、E E E E OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY David W. Qeenan DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE C

4、HECKED BY D. A. DiCenzo APPROVED BY N. A. Hauck MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, 4-BIT MAGNITUDE COMPARATOR, MONOLITHIC SILICON DRAWING APPROVAL DATE 86-01-24 AMSC N/A REVISION LEVEL E SIZE A CAGE CODE 14933 86013 SHEET 1 OF 14 DSCC FORM 2233 APR 97 5962-E465-09 Provided by IHSNot for ResaleN

5、o reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 86013 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consist

6、ing of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

7、 1.2 PIN. The PIN is as shown in the following examples. For device classes M and Q: 86013 01 E A Drawing number Device type (see 1.2.2) Case outline(see 1.2.4) Lead finish(see 1.2.5)For device class V: 5962 - 86013 01 V X A Federal stock class designator RHA designator (see 1.2.1) Device type (see

8、1.2.2)Device class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3) /Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices

9、 meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54HC85 4-bit magnitude

10、 comparator 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as listed below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q designators will not be included in

11、the PIN and will not be marked on the device. Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-3

12、8535 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 86013 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as

13、designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line F GDFP1-F16 or CDFP2-F16 16 Flat pack 2 CQCC1-N20 16 Square leadless chip carrier X CDFP4-F16 16 Flat pack 1.2.5 Lead finish. The lead finish is as specif

14、ied in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC+0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+0.5 V dc

15、Clamp diode current (IIK) 20 mA DC output diode current (IOK) (per pin) . 25 mA DC VCCor GND current (per pin) . 50 mA Storage temperature range (TSTG) . -65C to +150C Maximum power dissipation (PD): 500 mW 4/ Lead temperature (soldering, 10 seconds) +260C Thermal resistance, junction-to-case (JC) .

16、 See MIL-STD-1835 Junction temperature (TJ) +175C 5/ 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VCC) +2.0 V dc to +6.0 V dc Case operating temperature range (TC) -55C to +125C Input rise or fall time rate (tr, tf): VCC= 2.0 V 0 to 1000 ns VCC= 4.5 V 0 to 500 ns VCC= 6.0 V 0 to

17、 400 ns 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ The limits for the parameters specified herein sh

18、all apply over the full specified VCC range and case temperature range of -55C to +125C. 4/ For TC= +100C to +125C, derate linearly at 12 mW/C. 5/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL

19、-STD-883. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 86013 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specif

20、ication, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-

21、38535 - Integrated Circuits Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit D

22、rawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The follo

23、wing document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents cited in the solicitation or contract. ELECTRONIC INDUSTRIES ALLIANCE (EIA) JEDEC Standard No. 7-A - Standard for Description of 54/74HCXXXXX and 54/74HCTXXXXX High

24、-Speed CMOS Devices. (Copies of these documents are available online at http:/www.jedec.org or from Electronic Industries Alliance, 2500 Wilson Boulevard, Arlington, VA 22201-3834). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein,

25、the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-P

26、RF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, ap

27、pendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device cla

28、ss M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Logic diagram. The logic diagram shall be as specified on figure 2. 3.2.4 Truth table. The truth table shall be as spec

29、ified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified in figure 4. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 86013 DEFENSE SUPPLY CENTE

30、R COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 5 DSCC FORM 2234 APR 97 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in

31、table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN l

32、isted in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designato

33、r shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as r

34、equired in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requiremen

35、ts of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved so

36、urce of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as

37、 required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.

38、2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required

39、documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 39 (see MIL-PRF-38535, appendix A). Provided by IHSNot for

40、ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 86013 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Test conditions 1

41、/ -55C TC +125C unless otherwise specified Group A subgroups Limits Unit Min Max High level output voltage VOHVIN= VIHminimum or VILmaximum IOH= -20 A VCC= 2.0 V 1, 2, 3 1.9 V VCC= 4.5 V 4.4 VCC= 6.0 V 5.9 VIN= VIHminimum or VILmaximum IOH= -4.0 mA VCC= 4.5 V 1 3.98 2, 3 3.7 VIN= VIHminimum or VILma

42、ximum IOH= -5.2 mA VCC= 6.0 V 1 5.48 2, 3 5.2 Low level output voltage VOLVIN= VIHminimum or VILmaximum IOL= +20 A VCC= 2.0 V 1, 2, 3 0.1 V VCC= 4.5 V 0.1 VCC= 6.0 V 0.1 VIN= VIHminimum or VILmaximum IOL= +4.0 mA VCC= 4.5 V 1 0.26 2, 3 0.40 VIN= VIHminimum or VILmaximum IOL= +5.2 mA VCC= 6.0 V 1 0.2

43、6 2, 3 0.40 High level input voltage VIH 2/ VCC= 2.0 V 1, 2, 3 1.5 V VCC= 4.5 V 3.15 VCC= 6.0 V 4.2 Low level input voltage VIL 2/ VCC= 2.0 V 1, 2, 3 0.3 V VCC= 4.5 V 0.9 VCC= 6.0 V 1.2 Quiescent supply current ICCVIN= VCC or 0.0 V VCC= 6.0 V IOUT= 0.0 A 1 8.0 A 2, 3 160.0 Input leakage current IINV

44、IN= VCCor 0.0 V 1 0.1 A 2, 3 1.0 Input capacitance CINVIN= 0.0 V, TC= +25C, VCC= 2.0 V to 6.0 V, See 4.4.1c 4 10.0 pF Power dissipation capacitance CPDSee 4.4.1c 4 24.0 pF See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,

45、-STANDARD MICROCIRCUIT DRAWING SIZE A 86013 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Group A subgroups L

46、imits Unit Min Max Functional tests See 4.4.1d 7, 8 Propagation delay time, An, Bn to (A B) OUT, (A B) OUT tPHL3 tPLH3 3/ TC= +25C CL= 50 pF See figure 4 VCC= 2.0 V 9 140 ns VCC= 4.5 V 28 VCC= 6.0 V 24 TC= -55C and +125C CL= 50 pF See figure 4 VCC= 2.0 V 10, 11 210 ns VCC= 4.5 V 42 VCC= 6.0 V 36 See

47、 footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 86013 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 8 DSCC FORM 2234 APR 97 TABLE I. Electrical perform

48、ance characteristics - Continued. Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Group A subgroups Limits Unit Min Max Propagation delay time, (A B) IN or (A = B) IN to (A B IN AB OUT A=B OUT AB IN NC AB OUT A=B OUT AB IN A=B IN AB OUT A=B OUT AB3 A3B2 A2B1 A1B0 A0B0 X X X X X X X X X X X X H L H L L L L L L H L H A3=B3 A3=B3 A3=B3 A3=B3 A3=B3 A2=B2 A2=B2 A2=B2 A2=B2 A2=B2 A1=B1 A1=B1 A1=B1 A1=B1 A1=B1 A0=B0 A0=B0 A0=B0 A0=B0 A0=B0 L L H H X L L L L H L H L H X H L H L L L L L L H H H L L L H = High voltage level. L = Low volt

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