DLA SMD-5962-87538 REV A-2008 MICROCIRCUIT LINEAR SINGLE 16-CHANNEL ANALOG MUX DEMUX WITH OVERVOLATGE PROTECTION MONOLITHIC SILICON《线性微电路 设有过压保护的单16 信道模拟多路复用器(MUX) 多路分解器(DEMUX)和单片硅.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Redraw. Incorporate changes from change request approval letter. - drw 08-07-07 Robert M. Heber THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHET REV A A A A SHEET 15 16 17 18 REV STATUS REV A A A A A A A A A A A A A A OF SHEET

2、S SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY James E. Nicklaus CHECKED BY Charles E. Besore DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil APPROVED BY Michael A. Frye STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS

3、AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 90-01-24 MICROCIRCUIT, LINEAR, SINGLE 16-CHANNEL ANALOG MUX/DEMUX WITH OVERVOLATGE PROTECTION, MONOLITHIC SILICON AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-87538 SHEET 1 OF 18 DSCC FORM 2233 APR 97 5962-E444-08 Provided by I

4、HSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87538 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assuranc

5、e class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is

6、 reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 D 87538 01 X A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Case outline (see 1.2.4)Lead finish (see 1.2.5) / / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marke

7、d devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device

8、type. The device type identifies the circuit function as follows: Device type Generic number Circuit function 01 HS-1840RH Single 16-channel analog MUX/DEMUX with high impedance analog input overvoltage protection. 1.2.4 Case outlines. The case outlines are as designated in MIL-STD-1835 as follows:

9、Outline letter Descriptive designator Terminals Package style X GDIP1-T28 or CDIP2-T28 28 Dual-in-line Y GDFP1-F28 28 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings

10、. Supply voltage between V+ and V- 40 V dc Supply voltage between V+ and GND +20 V dc Supply voltage between V- and GND. -20 V dc VREFto GND. +20 V dc Digital input overvoltage range. (GND) 4 V) VA (VREF) + 4 V) Analog input overvoltage range (power on/off). -25 V VS +25 V Storage temperature range

11、-65C to +150C Maximum power dissipation (PD): 1/ Case X 1600 mW Case Y 1400 mW Lead temperature (soldering, 10 seconds). +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ). +175C _ 1/ The derating factor for case X shall be 20.4 mW/C above TA= +95C, for case

12、 Y shall be 18.5 mW/C above TA= +95C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87538 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.4 Recommen

13、ded operating conditions. Positive supply voltage (V+). +15 V dc Negative supply voltage (V-) -15 V dc VREF. 5 V dc (+10 V dc) 2/ VAH. 4.0 V dc (+7 V dc) 2/ VAL. 0.8 V dc 2/ VEN. 0.8 V dc Ambient operating temperature range (TA) -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, sta

14、ndards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Inte

15、grated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MI

16、L-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict b

17、etween the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 2/ For VREF= 5.0 V dc, VAH= 4.0 V dc minimum. For V REF= 10 V dc,

18、 VAH= 7.0 V dc. For either VREFvoltages, VAL= 0.8 V dc maximum. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87538 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FOR

19、M 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect

20、 the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physi

21、cal dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as sp

22、ecified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be as specified on figure 4. 3.3 Electrical performance characte

23、ristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electr

24、ical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire

25、 SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for d

26、evice class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, append

27、ix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manu

28、facturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the r

29、equirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be pr

30、ovided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verif

31、ication and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. Provided by IHS

32、Not for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87538 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics and post irradiat

33、ion end-point electrical parameter limits. Test Symbol Conditions 1/ -55C TA +125C Group A subgroups Device type Limits Unit unless otherwise specified Min Max Input leakage current, address or enable pins 2/ IAHMeasure inputs sequentially, ground all unused pins 1, 2, 3 All 1.0 A M 1 1.0 D 3/ 1.0 I

34、AL1, 2, 3 1.0 M 1 1.0 D 3/ 1.0 Leakage current into the source terminal of an OFF switch -IS(OFF)VS= -10 V, all unused inputs and output = +10 V 1, 2, 3 All 100 nA See figure 5 M 1 100 D 3/ 100 +IS(OFF)VS= +10 V, all unused inputs and output = -10 V 1, 2, 3 100 See figure 5 M 1 100 D 3/ 100 VS= +25

35、V, VA= 0 V, VEN= 0 V, V- = 0 V, V+ = 0 V, 1, 2, 3 All 100 nA Leakage current into the source terminal of an OFF switch with power off IS(OFF)power off M 1 100 VREF= 0 V, all unused inputs tied to GND, See figure 5 D 3/ 100 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction o

36、r networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87538 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics and post irradiation end-point electrical parame

37、ter limits - continued. Test Symbol Conditions 1/ -55C TA +125C Group A subgroups Device type Limits Unit unless otherwise specified Min Max VS= +25 V, VD= 0 V, all unused inputs tied to GND 1, 2, 3 All 1 A Leakage current into the source terminal of an OFF switch with overvoltage applied +IS(OFF) o

38、ver-voltage See figure 5 M 1 1 D 3/ 1 VS= -25 V, VD= 0 V, all unused inputs tied to GND 1, 2, 3 1 -IS(OFF) over-voltage See figure 5 M 1 1 D 3/ 1 VS= +25 V, VD= 0 V, all unused inputs tied to GND 1, 2, 3 All 1 A Leakage current into the drain terminal of an OFF switch with overvoltage applied +ID(OF

39、F) over-voltage See figure 5 M 1 1 D 3/ 1 VS= -25 V, VD= 0 V, all unused inputs tied to GND 1, 2, 3 1 -ID(OFF) over-voltage See figure 5 M 1 1 D 3/ 1 Leakage current into the drain terminal of an OFF switch -ID(OFF)VD= -10 V, all unused inputs = +10 V 1, 2, 3 All 100 nA See figure 5 M 1 100 D 3/ 100

40、 +ID(OFF)VD= +10 V, all unused inputs = -10 V 1, 2, 3 100 See figure 5 M 1 100 D 3/ 100 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87538 DEFENSE SUPPLY CENTER COLUMBUS COLU

41、MBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics and post irradiation end-point electrical parameter limits - continued. Test Symbol Conditions 1/ -55C TA +125C Group A subgroups Device type Limits Unit unless otherwise specified Mi

42、n Max +ID(ON)VS= +10 V, VD= +10 V, VEN= 0.8 V, all unused 1, 2, 3 All 100 nA Leakage current from an ON driver into the switch (drain and source) inputs = -10 V See figure 5 M 1 100 D 3/ 100 -ID(ON)VS= -10 V, VD= -10 V, VEN= 0.8 V, all unused 1, 2, 3 100 inputs = +10 V See figure 5 M 1 100 D 3/ 100

43、Positive supply current I(+) VA= 0 V, VEN= 0.8 V 1, 2, 3 All 0.5 mA M 1 0.5 D 3/ 0.5 Negative supply current I(-) VA= 0 V, VEN= 0.8 V 1, 2, 3 All 0.5 mA M 1 0.5 D 3/ 0.5 Positive standby supply current +ISBYVA= 0 V, VEN= 4.0 V 1, 2, 3 All 0.5 mA M 1 0.5 D 3/ 0.5 Negative standby supply current -ISBY

44、VA= 0 V, VEN= 4.0 V 1, 2, 3 All 0.5 mA M 1 0.5 D 3/ 0.5 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87538 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION L

45、EVEL A SHEET 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics and post irradiation end-point electrical parameter limits - continued. Test Symbol Conditions 1/ -55C TA +125C Group A subgroups Device type Limits Unit unless otherwise specified Min Max Switch ON resistance +RDS(

46、ON)VS= +15 V, ID= -1 mA, VEN= 0.8 V 1, 2, 3 All 1.0 k See figure 5 M 1 1.0 D 3/ 1.0 -RDS(ON)VS= -15 V, ID= -1 mA, VEN= 0.8 V 1, 2, 3 4.0 See figure 5 M 1 4.0 D 3/ 4.0 Capacitance: digital input CAV+ = V- = 0 V, f = 1 MHz, TA= +25C, see 4.4.1c 4 All 7 pF Capacitance: channel input CS(OFF)V+ = V- = 0

47、V, f = 1 MHz, TA= +25C, see 4.4.1c 4 All 5 pF Capacitance: channel output CD(OFF)V+ = V- = 0 V, f = 1 MHz, TA= +25C, see 4.4.1c 4 All 50 pF OFF isolation input or output VISOVEN= 4.0 V, f = 500 kHz, CL= 7 pF, RL= 1 k, VS= 3 VRMS, TA= +25C, see 4.4.1c 4 All -45 dB Function test See 4.4.1d 7 All See f

48、ootnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87538 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 9 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics and post irradiation end-point electrical parameter limits - continued. Test Sy