DLA SMD-5962-87610 REV D-2011 MICROCIRCUIT DIGITAL ADVANCED CMOS TRIPLE 3-INPUT NAND GATE MONOLITHIC SILICON.pdf

1、REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add device type 02. Add vendor CAGE 01295 for device type 02, cases E, F, and 2. Technical changes in 1.4 and table I. Change drawing CAGE code to 67268. Editorial changes throughout. 89-08-11 M. A. Frye B Add vendor CAGE F8859. Add device class V

2、 criteria. Add delta limits, table III. Add case outline X. Update boilerplate. Editorial changes throughout. ltg 00-11-01 Raymond Monnin C Add section 1.5, radiation features. Update boilerplate to MIL-PRF-38535 requirements and to include radiation hardness assured requirements. Editorial changes

3、throughout. - LTG 04-05-17 Charles F. Saffle D Update radiation features in section 1.5. Add SEP test table IB and paragraph 4.4.4.2. jak- 11-04-08 David J. Corbett CURRENT CAGE CODE 67268 REV SHEET REV D D D SHEET 15 16 17 REV STATUS REV D D D D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9

4、 10 11 12 13 14 PMIC N/A PREPARED BY Marcia B. Kelleher DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING CHECKED BY Monica L. Poelking THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A. Frye MICROCIRCUIT, DIGITAL, ADVANCED

5、CMOS, TRIPLE 3-INPUT NAND GATE, MONOLITHIC AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 87-06-05 SILICON AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 14933 5962-87610 SHEET 1 OF 17 DSCC FORM 2233 APR 97 5962-E016-11 Provided by IHSNot for ResaleNo reproduction or networking permitte

6、d without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87610 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q

7、 and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the foll

8、owing example: For device classes M and Q: 5962 - 87610 01 C A Federal RHA Device Case Lead stock class designator type outline finish designator (see 1.2.1) (see 1.2.2) (see 1.2.4) (see 1.2.5) / / Drawing number For device class V: 5962 F 87610 01 V X A Federal RHA Device Device Case Lead stock cla

9、ss designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator.

10、 Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit

11、function 01 54AC10 Triple three-input NAND gate 02 54AC11010 Triple three-input NAND gate 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as listed below. Since the device class designator has been added after the original issuanc

12、e of this drawing, device classes M and Q designators will not be included in the PIN and will not be marked on the device. Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with

13、 MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87610 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET

14、3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line D GDFP1-F14 or CDFP2-F14 14 Flat pack E GDIP1-T16 or CDIP2-T16 16 Dual-in-line F

15、 GDFP2-F16 or CDFP3-F16 16 Flat pack 2 CQCC1-N20 20 Square leadless chip carrier X CDFP3-F14 14 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply volt

16、age range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC + 0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc Clamp diode current (IIK, IOK) . 20 mA DC output current 50 mA DC VCCor GND current (per pin) . 50 mA Storage temperature range (TSTG) . -65C to

17、 +150C Maximum power dissipation (PD) 500 mW Lead temperature (soldering, 10 seconds) +260C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) . +175C 4/ 1.4 Recommended operating conditions. 2/ 3/ 5/ Supply voltage range (VCC) +2.0 V dc to +6.0 V dc Input voltage

18、 range (VIN) +0.0 V dc to VCCOutput voltage range (VOUT). +0.0 V dc to VCCCase operating temperature range (TC) . -55C to +125C Input rise or fall times (tr, tf): VCC= 3.6 V 0 to 8 ns VCC= 5.5 V 0 to 8 ns 1.5 Radiation features. Device type 01: Maximum total dose available (dose rate = 50 300 rads(S

19、i)/s) 300 krads (Si) Single event phenomenon (SEP): effective LET, no SEL (see 4.4.4.2) 93 MeV-cm2/mg 6/ effective LET, no SEU (see 4.4.4.2) . 93 MeV-cm2/mg 6/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade

20、 performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C. 4/ Maximum junction temperature shall not be exceeded except

21、 for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883. 5/ Operation from 2.0 V dc to 3.0 V dc is provided for compatibility with data retention and battery back-up systems. Data retention implies no input transition and no stored data loss with the

22、following conditions: VIH 70% VCC, VIL 30% VCC, VOH 70% VCC -20A, VOL 30% VCC 20 A. 6/ These limits were obtained during technology characterization and qualification, and are guaranteed by design or process, but not production tested unless specified by the customer through the purchase order or co

23、ntract. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87610 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specificatio

24、n, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535

25、- Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawin

26、gs. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following

27、 document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents cited in the solicitation or contract. JEDEC SOLID STATE TECHNOLOGY ASSOCIATION (JEDEC) JESD-20 - Standard for Description of 54/74ACXXXX and 54/74ACTXXXX Advanced High

28、-Speed CMOS Devices. (Copies of these documents are available online at http:/www.jedec.org or from JEDEC Solid State Technology Association, 3103 North 10th Street, Suite 240S, Arlington, VA 22201.) ASTM INTERNATIONAL (ASTM) ASTM F1192- Standard Guide for the Measurement of Single Event Phenomena (

29、SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices. (Copies of this document is available online at http:/www.astm.org/ or from ASTM International, P. O. Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959). (Non-Government standards and other publications are normally avai

30、lable from the organizations that prepare or distribute the documents. These documents may also be available in or through libraries or other informational services.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of thi

31、s drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as

32、 specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for no

33、n-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. Provided

34、by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87610 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 3.2.1 Case outlines. The case outlines shall be in accordance with 1

35、.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switchi

36、ng waveforms and test circuit shall be as specified on figure 4. 3.2.6 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. 3.3 Electri

37、cal performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full case operating temperature range. 3.4 Electrical test re

38、quirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages whe

39、re marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-

40、PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required

41、in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall

42、 be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime -VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers produc

43、t meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class

44、M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is r

45、equired for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritimes agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore

46、 documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 36 (see MIL-PRF-38535, appendix A).Provided by IHSNot for ResaleNo reproduction or

47、 networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87610 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test and MIL-STD-883 test method 1/ Symbol Test conditio

48、ns 2/ 3/ -55C TC +125C +3.0 V VCC +5.5 V Device type and VCCGroup A subgroups Limits 4/ Unit unless otherwise specified Device class Min Max Positive input clamp voltage 3022 VIC+For input under test, IIN= 1.0 mA All V 0.0 V 1 0.4 1.5 V Negative input clamp voltage 3022 VIC-For input under test, IIN= -1.0 mA All V Open 1 -0.4 -1.5 V High level output voltage VOH VIN= VIHminimum or VILmaximum IOH= -50 A All All 3.0 V 1, 2, 3 2.9