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本文(DLA SMD-5962-87611 REV E-2012 MICROCIRCUIT DIGITAL ADVANCED CMOS TRIPLE THREE-INPUT AND GATE MONOLITHIC SILICON.pdf)为本站会员(feelhesitate105)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-87611 REV E-2012 MICROCIRCUIT DIGITAL ADVANCED CMOS TRIPLE THREE-INPUT AND GATE MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add device type 02. Add vendor CAGE 01295 for device type 02, cases E, F, and 2. Technical changes in 1.4 and table I. Change drawing CAGE code to 67268. Editorial changes throughout. mbk 89-08-10 M. A. Frye B Add vendor CAGE F8859. Add device cl

2、ass V criteria. Add table III, delta limits. Update boilerplate to MIL-PRF-38535 requirements. -jak 01-09-05 Thomas M. Hess C Add section 1.5, radiation features. Make changes ICCHand ICCLmaximum limits for subgroup 1 in table I. Update the boilerplate to include radiation hardness assured requireme

3、nts. Editorial changes throughout. - LTG 04-05-17 Charles F. Saffle D Correct descriptive designator for case outline X in paragraph 1.2.4. Update boilerplate to MIL-PRF-38535 requirements. Editorial changes throughout. - LTG 06-07-12 Thomas M. Hess E Update radiation hardened assurance paragraphs a

4、nd tables. Update boilerplate to the current requirements of MIL-PRF-38535. Editorial changes throughout. - jak 12-12-03 Thomas M. Hess REV SHEET REV E E SHEET 15 16 REV STATUS REV E E E E E E E E E E E E E E OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY James E. Nicklaus DLA

5、 LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING CHECKED BY D. A. DiCenzo THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Nelson A. Hauck MICROCIRCUIT, DIGITAL, ADVANCED CMOS, TRIPLE THREE-INPUT AND GATE, MONOLITHIC SILICON

6、 AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 87-05-21 AMSC N/A REVISION LEVEL E SIZE A CAGE CODE 67268 5962-87611 SHEET 1 OF 16 DSCC FORM 2233 APR 97 5962-E002-13 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCU

7、IT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-87611 REVISION LEVEL E SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A

8、choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following examples. For device classes M and Q: 5962 -

9、 87611 01 C A Federal RHA Device Case Lead stock class designator type outline finish designator (see 1.2.1) (see 1.2.2) (see 1.2.4) (see 1.2.5) / / Drawing number For device class V: 5962 F 87611 01 V X A Federal RHA Device Device Case Lead stock class designator type class outline finish designato

10、r (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-P

11、RF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54AC11 Triple three-input AND gate 02

12、 54AC11011 Triple three-input AND gate 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as listed below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q designato

13、rs will not be included in the PIN and will not be marked on the device. Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and

14、 qualification to MIL-PRF-38535 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-87611 REVISION LEVEL E SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The

15、case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line D GDFP1-F14 or CDFP2-F14 14 Flat pack X CDFP3-F14 14 Flat pack E GDIP1-T16 or CDIP2-T16 16 Dual-in-line F GDFP2-F16 or CDFP3-F16 16

16、 Flat pack 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input vol

17、tage range (VIN) -0.5 V dc to VCC+ 0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc Clamp diode current (IIK, IOK) 20 mA DC output current (per pin) 50 mA DC VCCor GND current (per pin) . 100 mA Storage temperature range (TSTG) . -65C to +150C Maximum power dissipation (PD) . 500

18、 mW Lead temperature (soldering, 10 seconds): Case outline X +260C All other case outlines except X +300C Thermal resistance, junction-to-case (JC). See MIL-STD-1835 Junction temperature (TJ) +175C 4/ 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VCC) . +2.0 V dc to +5.5 V dc 5/

19、Input voltage range . 0.0 V dc to VCCOutput voltage range . 0.0 V dc to VCCCase operating temperature range (TC) . -55C to +125C Input rise or fall time (tr, tf), VCC= 3.6 V, VCC= 5.5 V 0 to 8 ns 1.5 Radiation features. Device type 01: Maximum t otal dose (dose rate = 50 300 rads(Si)/s) 300 krads (S

20、i) No SEU occurs at effective LET (see 4.4.4.2). 93 MeVcm2/mg No SEL occurs at effective LET (see 4.4.4.2) . 93 MeVcm2/mg 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2

21、/ Unless otherwise noted, all voltages are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange and case temperature range of 55C to +125C. 4/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in s

22、creening conditions in accordance with method 5004 of MIL-STD-883. 5/ Operation from 2.0 V dc to 3.0 V dc is provided for compatibility with data retention and battery backup systems. Data retention implies no input transitions and no stored data loss with the following conditions: VIH 70 percent VC

23、C, VIL 30 percent VCC, VOH 70 percent VCCat -20 A, VOL 30 percent VCCat 20 A.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-87611 REVISION LEVEL E SHEET 4 DSCC

24、 FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicit

25、ation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF

26、DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia

27、, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. JEDEC SOLID STATE TECHNOLOGY ASSOCIATION (JEDEC) JESD 2

28、0 - Standard for Description of 54/74ACXXXX and 54/74ACTXXXX Advanced High-Speed CMOS Devices. (Copies of these documents are available online at http:/www.jedec.org/ or from JEDEC Solid State Technology Association, 3103 North 10th Street, Suite 240S, Arlington, VA 22201-2701.) 2.3 Order of precede

29、nce. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requireme

30、nts. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein.

31、 The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-

32、38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The trut

33、h table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4. Provided by IHSNot for ResaleNo reproduction or networking perm

34、itted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-87611 REVISION LEVEL E SHEET 5 DSCC FORM 2234 APR 97 3.2.6 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document re

35、vision level control and shall be made available to the preparing or acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits ar

36、e as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be mar

37、ked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option,

38、 the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a

39、 “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply

40、 to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime -V

41、A prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conforma

42、nce. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to

43、DLA Land and Maritime -VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritime s agent, and the acquiring

44、 activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be

45、 in microcircuit group number 36 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-87611 REVISION LEVEL E SHEET 6 DSCC FORM 2234

46、APR 97 TABLE I. Electrical performance characteristics. Test and MIL-STD-883 test method 1/ Symbol Test conditions 2/ 3/ -55C TC +125C +3.0 V VCC +5.5 V Device type and Device class VCCGroup A subgroups Limits 4/ Unit unless otherwise specified Min Max Positive input clamp voltage 3022 VIC+For input

47、 under test, IIN= 1.0 mA All V 0.0 V 1 0.4 1.5 V Negative input clamp voltage 3022 VIC-For input under test, IIN= -1.0 mA All V Open 1 -0.4 -1.5 V High level output voltage 3006 VOH 5/ VIN= VIHor VILIOH= -50 A All All 3.0 V 1, 2, 3 2.90 V All All 4.5 V 4.40 All All 5.5 V 5.40 VIN= VIHor VILIOH= -4 m

48、A All All 3.0 V 2.40 VIN= VIHor VILIOH= -24 mA All All 4.5 V 3.70 5.5 V 4.70 VIN= VIHor VILIOH= -50 mA All All 5.5 V 3.85 Low level output voltage 3007 VOL 5/ VIN= VIHor VILIOL= 50 A All All 3.0 V 1, 2, 3 0.10 V All All 4.5 V 0.10 All All 5.5 V 0.10 VIN= VIHor VILIOL= 12 mA All All 3.0 V 0.50 VIN= VIHor VILIOL= 24 mA All All 4.5 V 0.50 All All 5.5 V 0.50 VIN= VIHor VILIOL= 50 mA All All 5.5 V 1.65 High level input voltage VIH6/ All All 3.0 V 1, 2, 3 2.1 V All All 4.5 V 1, 2, 3 3.15 All All 5.5 V 1, 2,

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