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本文(DLA SMD-5962-87692 REV C-2009 MICROCIRCUIT DIGITAL ADVANCED CMOS 8-INPUT MULTIPLEXER WITH THREE-STATE OUTPUTS MONOLITHIC SILICON.pdf)为本站会员(王申宇)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-87692 REV C-2009 MICROCIRCUIT DIGITAL ADVANCED CMOS 8-INPUT MULTIPLEXER WITH THREE-STATE OUTPUTS MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add device class V criteria. Editorial changes throughout - jak. 98-06-30 Monica L. Poelking B Add RHA data and limits. Editorial changes throughout - jak. 99-03-11 Monica L. Poelking C Update the boilerplate paragraphs to the current MIL-PRF-385

2、35 requirements. - LTG 09-03-24 Thomas M. Hess REV SHET REV C C C C SHEET 15 16 17 18 REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Greg A. Pitz CHECKED BY D. A. DiCenzo DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/

3、www.dscc.dla.mil APPROVED BY Nelson A. Hauck STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 87-08-10 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 8-INPUT MULTIPLEXER WITH THREE-STATE OUTPUTS, MONOLITHIC SILI

4、CON AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-87692 SHEET 1 OF 18 DSCC FORM 2233 APR 97 5962-E191-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87692 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS,

5、OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and a

6、re reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following examples. For device classes M and Q: 5962 R 87692 01 E A Federal stock class designator RHA designator (

7、see 1.2.1) Device type (see 1.2.2)Case outline (see 1.2.4)Lead finish (see 1.2.5) / / Drawing number For device class V: 5962 R 87692 01 V E A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (s

8、ee 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the

9、 appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54AC251 8-input multiplexer with three-state outputs 1.2.3 Device class designator. The device class d

10、esignator is a single letter identifying the product assurance level as listed below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q designators will not be included in the PIN and will not be marked on the device. Device class De

11、vice requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 Provided by IHSNot for ResaleNo reproduction or networki

12、ng permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87692 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline lette

13、r Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line F GDFP2-F16 or CDFP3-F16 16 Flat pack 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for

14、device class M. 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +6.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC + 0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc Clamp diode current (IIK, IOK) 20 mA DC output current (per pin) 50 mA DC VCCo

15、r GND current (per pin) . 100 mA Maximum power dissipation (PD) . 500 mW Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 10 seconds). +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) +175C 4/ 1.4 Recommended operating conditio

16、ns. 2/ 3/ 5/ Supply voltage range (VCC) +3.0 V dc to +5.5 V dc Input voltage range (VIN) +0.0 V dc to VCCOutput voltage range (VOUT). +0.0 V dc to VCCMinimum high level input voltage (VIH): VCC= 3.0 V 2.10 V dc VCC= 4.5 V 3.15 V dc VCC= 5.5 V 3.85 V dc Maximum low level input voltage (VIL): VCC= 3.0

17、 V 0.90 V dc VCC= 4.5 V 1.35 V dc VCC= 5.5 V 1.65 V dc Case operating temperature range (TC). -55C to +125C Input rise or fall times (VCC= 3.6 V to 5.5 V) 0 to 8 ns/V 1.5 Radiation features: Total dose (dose rate 165 mrad/s) (MIL-STD-883, method 1019, condition A, followed by extended room temperatu

18、re anneal). 1 x 105Rads (Si) 6/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ The limits for the parame

19、ters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C. 4/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883. 5/ Operation from 2.0

20、V dc to 3.0 V dc is provided for compatibility with data retention and battery back-up systems. Data retention implies no input transition and no stored data loss with the following conditions: VIH 70% VCC, VIL 30% VCC, VOH 70% VCC -20 A, VOL 30% VCC 20 A. 6/ The total dose specification for this de

21、vice only applies to the specified effective dose rate, or lower, environment. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87692 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C S

22、HEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in

23、the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEP

24、ARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4

25、D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents cited in the solicitation or contract. ELECTRONIC INDUSTRIES ALLIANCE (EIA) JEDEC Standar

26、d No. 20 - Standard for Description of 54/74ACXXXXX and 54/74ACTXXXXX Advanced High-Speed CMOS Devices. (Copies of these documents are available online at http:/www.jedec.org or from Electronic Industries Alliance, 2500 Wilson Boulevard, Arlington, VA 22201-3834). 2.3 Order of precedence. In the eve

27、nt of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The indivi

28、dual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual

29、 item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herei

30、n for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall b

31、e as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4. Provided by IHSNot for ResaleNo reproduction or networking permitted without l

32、icense from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87692 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electric

33、al performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for ea

34、ch subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not

35、 marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/complia

36、nce mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance sha

37、ll be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein

38、). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535

39、, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for

40、device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring

41、activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be

42、in microcircuit group number 39 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87692 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FO

43、RM 2234 APR 97 TABLE I. Electrical performance characteristics. Test and MIL-STD-883 test method 1/ Symbol VCCGroup A subgroups Limits 5/ Unit Test conditions 2/,3/ -55C TC +125C +3.0 V VCC +5.5 V unless otherwise specified Device type 4/ and device class Min Max Positive input clamp voltage 3022 VI

44、C+For input under test, IIN= 1.0 mA All V 0.0 V 1 0.4 1.5 V Negative input clamp voltage 3022 VIC-For input under test, IIN= -1.0 mA All V Open 1 -0.4 -1.5 V High level input voltage VIHAll All 3.0 V 1, 2, 3 2.1 V 6/ All All 4.5 V 1, 2, 3 3.15 All All 5.5 V 1, 2, 3 3.85 Low level input voltage VILAl

45、l All 3.0 V 1, 2, 3 0.9 V 6/ All All 4.5 V 1, 2, 3 1.35 All All 5.5 V 1, 2, 3 1.65 High level output voltage VOH VIN= VIHminimum or VILmaximum All All 3.0 V 1, 2, 3 2.9 V 3006 7/ IOH= -50 A All All 4.5 V 1, 2, 3 4.4 All All 5.5 V 1, 2, 3 5.4 VIN= VIHminimum or VILmaximum IOH= -4 mA All All 3.0 V 1,

46、2, 3 2.4 IN= VIHminimum or VILmaximum All All 4.5 V 1, 2, 3 3.7 OH= -24 mA All All 5.5 V 1, 2, 3 4.7 VIN= VIHminimum or VILmaximum IOH= -50 mA All All 5.5 V 1, 2, 3 3.85 Low level output voltage VOL VIN= VIHminimum or VILmaximum All All 3.0 V 1, 2, 3 0.1 V 3007 7/ IOL= 50 A All All 4.5 V 1, 2, 3 0.1

47、 All All 5.5 V 1, 2, 3 0.1 VIN= VIHminimum or VILmaximum IOL= 12 mA All All 3.0 V 1, 2, 3 0.5 IN= VIHminimum or VILmaximum All All 4.5 V 1, 2, 3 0.5 OL= 24 mA All All 5.5 V 1, 2, 3 0.5 VIN= VIHminimum or VILmaximum IOL= 50 mA All All 5.5 V 1, 2, 3 1.65 See footnotes at end of table. Provided by IHSN

48、ot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87692 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test and MIL-STD-883 test method 1/ Symbol VCCGroup A subgroups Limits 5/ Unit Test conditions 2/,3/ -55C TC +125C +3.0 V VCC +5.5 V unless otherwise specified Device type 4/ and device class Min Max Input leakage current low 3009 IILVIN= 0.0 V

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