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本文(DLA SMD-5962-87724 REV C-2008 MICROCIRCUIT DIGITAL HIGH-SPEED CMOS 4-BIT SYNCHRONOUS BINARY UP DOWN COUNTER MONOLITHIC SILICON.pdf)为本站会员(boatfragile160)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-87724 REV C-2008 MICROCIRCUIT DIGITAL HIGH-SPEED CMOS 4-BIT SYNCHRONOUS BINARY UP DOWN COUNTER MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add vendor CAGE F8859. Add device class V criteria. Correct data limits in Paragraph 1.3. Add case outline X. Add Table III. Update boilerplate. Editorial changes throughout. les 00-08-22 Raymond L. Monnin B Correct table II. Update boilerplate t

2、o MIL-PRF- 38535 requirements. jak 02-01-25 Thomas M. Hess C Update boilerplate to MIL-PRF- 38535 requirements. - LTG 08-05-15 Thomas M. Hess REV SHET REV C C C C C SHEET 15 16 17 18 19 REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY G

3、reg A. Pitz DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY D. A. DiCenzo COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Robert P. Evans AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 87-10-22

4、 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, 4-BIT SYNCHRONOUS BINARY UP/DOWN COUNTER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-87724 SHEET 1 OF 19 DSCC FORM 2233 APR 97 5962-E304-08 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from

5、 IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87724 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and s

6、pace application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example

7、s. For device classes M and Q: 5962 - 87724 01 E A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Case outline (see 1.2.4)Lead finish (see 1.2.5) / / Drawing number For device class V: 5962 - 87724 01 V X A Federal stock class designator RHA designator (see 1.2.1) D

8、evice type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M

9、RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54HC

10、193 4-bit synchronous binary up/down counter 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as listed below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q des

11、ignators will not be included in the PIN and will not be marked on the device. Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certificati

12、on and qualification to MIL-PRF-38535 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87724 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case o

13、utline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier X CDFP4-F-16 16 Flat pack 1.2.5 Lead finish. The lead finish is as speci

14、fied in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC+0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+0.5 V dc

15、 Input clamp current (IIK) 20 mA Output clamp current (IOK) 20 mA Continuous output current (IOUT) 25 mA Continuous current through VCCor GND . 50 mA Storage temperature range (TSTG) . -65C to +150C Maximum power dissipation (PD) . 500 mW 4/ Lead temperature (soldering, 10 seconds). +260C Thermal re

16、sistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) +175C 5/ 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VCC) +2.0 V dc to +6.0 V dc Case operating temperature range (TC) -55C to +125C Input rise or fall time (tr, tf): VCC= 2.0 V 0 to 1000 ns VCC= 4.5 V

17、 0 to 500 ns VCC= 6.0 V 0 to 400 ns 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to GND. 3/ The limits for th

18、e parameters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C. 4/ For TC= +100C to +125C, derate linearly at 12 mW/C. 5/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in acc

19、ordance with method 5004 of MIL-STD-883. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87724 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 2. APPLIC

20、ABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTME

21、NT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-

22、103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philad

23、elphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been

24、obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the

25、 form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical

26、dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specif

27、ied on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4. 3.3 Electrical perf

28、ormance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirement

29、s. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87724 DEFENSE S

30、UPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due t

31、o space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance

32、with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance.

33、For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an

34、approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and here

35、in or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits

36、 delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M

37、. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class

38、M. Device class M devices covered by this drawing shall be in microcircuit group number 40 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87724 DEFENSE SUPPLY CENTER COLUMBUS

39、 COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Test conditions 1/ -55C TC +125C Group A subgroups Limits Unit unless otherwise specified Min Max VCC= 2.0 V 1, 2, 3 1.9 VCC= 4.5 V 4.4 VIN= VIHminimum or VILmaximum

40、 IOH= -20 A VCC= 6.0 V 5.9 1 3.98 VIN= VIHminimum or VILmaximum IOH= -4.0 mA VCC= 4.5 V 2, 3 3.7 1 5.48 High level output voltage VOHVIN= VIHminimum or VILmaximum IOH= -5.2 mA VCC= 6.0 V 2, 3 5.2 V VCC= 2.0 V 1, 2, 3 0.1 VCC= 4.5 V 0.1 VIN= VIHminimum or VILmaximum IOL= 20 A VCC= 6.0 V 0.1 1 0.26 VI

41、N= VIHminimum or VILmaximum IOL= 4.0 mA VCC= 4.5 V 2, 3 0.4 1 0.26 Low level output voltage VOLVIN= VIHminimum or VILmaximum IOL= 5.2 mA VCC= 6.0 V 2, 3 0.4 V VCC= 2.0 V 1.5 VCC= 4.5 V 3.15 High level input voltage VIH 2/ VCC= 6.0 V 1, 2, 3 4.2 V VCC= 2.0 V 0.3 VCC= 4.5 V 0.9 Low level input voltage

42、 VIL 2/ VCC= 6.0 V 1, 2, 3 1.35 V 1 8.0 Quiescent supply current ICCVIN= VCC or GND VCC= 6.0 V 2, 3 160.0A 1 0.1 Input leakage current IINVIN= VCCor GND VCC= 6.0 V 2, 3 1.0 A See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-

43、,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87724 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Test conditions 1/ -55C TC +125C Group A subgroups Limits Unit unless o

44、therwise specified Min Max Input capacitance CINVIN= 0.0 V, TC= +25C See 4.4.1c 4 10.0 pF Power dissipation capacitance CPDSee 4.4.1c 4 67.0 pF Functional tests See 4.4.1b 7, 8 VCC= 2.0 V 4.2 VCC= 4.5 V 21 TC= +25C CL= 50 pF See figure 4 VCC= 6.0 V 9 24 MHz VCC= 2.0 V 2.8 VCC= 4.5 V 14 Maximum frequ

45、ency, clock up (CPU), or clock down (CPD) fMAX TC= -55C, +125C CL= 50 pF See figure 4 VCC= 6.0 V 10, 11 16 MHz VCC= 2.0 V 110 VCC= 4.5 V 22 TC= +25C CL= 50 pF See figure 4 VCC= 6.0 V 9 19 ns VCC= 2.0 V 165 VCC= 4.5 V 33 Setup time, data to LOAD tsTC= -55C, +125C CL= 50 pF See figure 4 VCC= 6.0 V 10,

46、 11 28 ns VCC= 2.0 V 5 VCC= 4.5 V 5 TC= +25C CL= 50 pF See figure 4 VCC= 6.0 V 9 5 ns VCC= 2.0 V 5 VCC= 4.5 V 5 Hold time, data to LOAD thTC= -55C, +125C CL= 50 pF See figure 4 VCC= 6.0 V 10, 11 5 ns See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted

47、without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87724 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Test conditions 1/ -55C TC +125C Group A subgr

48、oups Limits Unit unless otherwise specified Min Max VCC= 2.0 V 120 VCC= 4.5 V 24 TC= +25C CL= 50 pF See figure 4 VCC= 6.0 V 9 21 ns VCC= 2.0 V 180 VCC= 4.5 V 36 Pulse duration, CLR high tW TC= -55C, +125C CL= 50 pF See figure 4 VCC= 6.0 V 10, 11 31 ns VCC= 2.0 V 120 VCC= 4.5 V 24 TC= +25C CL= 50 pF See figure 4 VCC= 6.0 V 9 21 ns VCC= 2.0 V 180 VCC= 4.5 V 36 Pulse duration, LOAD low tW TC= -55C, +125C CL= 50 pF See figure 4 VCC= 6.0 V 10, 11 31 ns VCC= 2.0 V 120 VCC= 4.5 V 24 TC= +

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