DLA SMD-5962-88538 REV G-2010 MICROCIRCUIT LINEAR DUAL PRECISION JFET-INPUT OPERATIONAL AMPLIFIERS MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add case outline 2 to device type 01. Update document. Editorial changes throughout. 89-09-13 M. A. FRYE B Delete vendor CAGE 64155. Change boilerplate to add one-part numbers. Add delta test limit table. Make changes to IIO, IIB, and AVOtests as

2、 specified under table I. 96-12-31 R. MONNIN C Add radiation hardened assurance requirements. - ro 99-02-16 R. MONNIN D Replaced reference to MIL-STD-973 with reference to MIL-PRF-38535. Drawing updated to reflect current requirements. - gt 04-08-06 R. MONNIN E Add a new footnote under paragraph 1.5

3、 and Table I. - ro 05-08-10 R. MONNIN F Add device type 04. Make changes to 1.2.2, table I, figure 1, and table IIB. - ro 08-06-06 R. HEBER G Make correction to the SMD number on sheets 2 through 12. Under paragraph 1.5, delete Neutron and Dose rate latch up information. Delete paragraphs 4.4.4.1.1

4、and 4.4.4.2. - ro 10-09-21 C. SAFFLE THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHET REV SHET REV STATUS REV G G G G G G G G G G G G OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 PMIC N/A PREPARED BY JOSEPH A. KERBY DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla

5、.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAYMOND MONNIN APPROVED BY MICHAEL A. FRYE MICROCIRCUIT, LINEAR, DUAL PRECISION JFET-INPUT OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON DRAWING APPROVAL DATE 88-

6、10-07 AMSC N/A REVISION LEVEL G SIZE A CAGE CODE 67268 5962-88538 SHEET 1 OF 12 DSCC FORM 2233 APR 97 5962-E408-10 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88538 DLA LAND AND MARITIME COLUMBUS, OHIO 43

7、218-3990 REVISION LEVEL G SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are refl

8、ected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following examples. For device classes M and Q: 5962 - 88538 01 G A Federal stock class designator RHA designator (see 1.2

9、.1) Device type (see 1.2.2)Case outline (see 1.2.4)Lead finish (see 1.2.5) / /Drawing number For device class V: 5962 R 88538 01 V G A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3)

10、 /Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropria

11、te RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 OP215A Dual, precision JFET input operational amplifier 02 OP215B Dual, precision JFET input operational amplifi

12、er 03 OP215B Dual, precision JFET input operational amplifier with balance adjust 04 OP215A Dual, precision JFET input operational amplifier with balance adjust 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as listed below. Sinc

13、e the device class designator has been added after the original issuance of this drawing, device classes M and Q designators will not be included in the PIN and will not be marked on the device. Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-ST

14、D-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88538

15、DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style G MACY1-X8 8 Can P GDIP1-T8 or CDIP2-T8 8 Dual-in-

16、line 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ Supply voltage (VS) . 22 V Differential input voltage . 40 V Input voltage

17、 (VIN) 20 V 2/ Output short-circuit duration Indefinite Internal power dissipation (PD) . 500 mW 3/ Junction temperature (TJ) . +150C Storage temperature range -65C to +150C Lead temperature (soldering, 60 seconds) +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 1.4 Recommended op

18、erating conditions. Supply voltage (VS) . 15 V Ambient operating temperature (TA) . -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 50 - 300 rad(Si)/s) . 100 krads(Si) 4/ _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extende

19、d operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, the absolute maximum negative input voltage is equal to the negative power supply voltage. 3/ For case outline G at TA 80C, derate linearly at 7.1 mW/C. For case outline P at TA 75C, dera

20、te linearly at 6.7 mW/C. For case 2 at TA 80C, derate linearly at 7.5 mW/C. 4/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in

21、MIL-STD-883, method 1019, condition A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88538 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUME

22、NTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFEN

23、SE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List

24、of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of pre

25、cedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requi

26、rements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described her

27、ein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-

28、PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Radiation exposur

29、e circuit. The radiation exposure circuit shall be as specified on figure 2. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I

30、 and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN list

31、ed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator s

32、hall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as requ

33、ired in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88538 DLA LAND AND MARITIME COLUMBUS, OHI

34、O 43218-3990 REVISION LEVEL G SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ -55C TA +125C VS= 15 V Group A subgroups Device type Limits Unit unless otherwise specified Min Max Input offset voltage VIORS= 50 1 01,04 1.0 mV 02,03 2.0 2,3 01

35、,04 2.0 02,03 3.0 M,D,P,L,R 1 01,04 3.0 Input offset current IIOTJ= +25C, -55C, VCM= 0 V 1,3 3/ All 50.0 pA TJ= +125C, VCM= 0 V 2 8.0 nA M,D,P,L,R, VCM= 0 V 1 01,04 300 pA Input bias current IIBTJ= +25C, -55C, 1,3 3/ 01,04 100 pA VCM= 0 V 02,03 200 TJ= +125C, VCM= 0 V 2 All 10 nA M,D,P,L,R, VCM= 0 V

36、 1 01,04 6 Large signal voltage gain AVOVO= 10 V, RL 2 k 4 01,04 150 V/mV 02,03 750 5,6 All 30 M,D,P,L,R VO= 10 V, RL= 2 k 4 01,04 10 Output voltage swing 4/ VORL 2 k 4 All 11 V RL 10 k 5,6 12 Supply current ISVO= 0 V, TA= +25C 1 All 8.5 mA M,D,P,L,R, VO= 0 V 1 01,04 8.5 See footnotes at end of tabl

37、e. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88538 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continue

38、d. Test Symbol Conditions 1/ 2/ -55C TA +125C VS= 15 V Group A subgroups Device type Limits Unit unless otherwise specified Min Max Slew rate 4/ SR AVCL= +1, RL 2 k, 4 01,04 10.0 V/s CL= 100 pF 5,6 7.5 4 02,03 7.5 5,6 5.0 Settling time 4/ 5/ tSTo 0.01 %, TA= +25C 9 All 3.0 s To 0.05 %, TA= +25C 2.1

39、To 0.10 %, TA= +25C 1.8 Common-mode 4/ rejection ratio CMRR VCM= IVR = 10.2 V 1 All 86 dB 2,3 82 Power supply rejection 4/ ratio PSRR VS= 10 V to 16 V 1 01,04 51 V/V 02,03 80 2,3 All 100 Input voltage range 4/ 6/ IVR 1,2,3 All 10.2 V Gain bandwidth 4/ 7/ product ABWTA= +25C 4 All 3.5 MHz 1/ RHA devi

40、ces supplied to this drawing have been characterized through all levels M, D, P, L, and R of irradiation. However, this device is only tested at the “R” level. Pre and Post irradiation values are identical unless otherwise specified in Table I. When performing post irradiation electrical measurement

41、s for any RHA level, TA= +25C. 2/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A. 3/ TA=

42、 -55C for IIOand IIBtests, subgroup 3, is guaranteed by TA= +25C test. 4/ This parameter not tested post radiation. 5/ Settling time is defined here for a unity gain inverter connection using 2 k resistors. It is the time required for the error voltage (the voltage at the inverting input pin on the

43、amplifier) to settle to within a specified percent of its final value from the time a 10 V step input is applied to the inverter. 6/ IVR test is defined as the VCMrange used for the CMRR test. 7/ Parameter guaranteed if not tested to the limits specified. Provided by IHSNot for ResaleNo reproduction

44、 or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88538 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 7 DSCC FORM 2234 APR 97 Device types 01 and 02 01 03, 04 Case outlines G and P 2 2 Terminal number Terminal symbol 1 OUTPUT A N

45、C NC 2 -INPUT A OUTPUT A -INPUT A 3 +INPUT A NC +INPUT A 4 -VSNC BALANCE A 5 +INPUT B -INPUT A NC 6 -INPUT B NC -VS7 OUTPUT B +INPUT A NC 8 +VSNC BALANCE B9 - NC +INPUT B 10 - -VS-INPUT B 11 - NC NC 12 - +INPUT B BALANCE B 13 - NC +VS(B) (SEE NOTE 1) 14 - NC OUTPUT B15 - -INPUT B NC 16 - NC NC 17 -

46、OUTPUT B NC 18 - NC OUTPUT A19 - NC +VS(A) (SEE NOTE 1) 20 - +VSBALANCE A NOTE: 1. +VS(A) and +VS(B) internally connected. 2. NC = No connection FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRA

47、WING SIZE A 5962-88538 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 8 DSCC FORM 2234 APR 97 FIGURE 2. Radiation exposure circuit. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-8853

48、8 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 9 DSCC FORM 2234 APR 97 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacture