DLA SMD-5962-88539 REV F-2011 MICROCIRCUIT LINEAR RADIATION HARDENED PRECISION INSTRUMENTATION AMPLIFIER MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add case outline 2. Add input voltage test. Add footnote 3/. Editorial changes throughout. 90-03-30 M. POELKING B Change boilerplate to add one-part part numbers. Add table IIB for delta limits. - rrp 97-12-08 R. MONNIN C Add radiation hardened a

2、ssurance requirements. - lgt 99-03-01 R. MONNIN D Replaced reference to MIL-STD-973 with reference to MIL-PRF-38535. Drawing updated to reflect current requirements. - gt 04-08-06 R. MONNIN E Add a new footnote under paragraph 1.5 and Table I. - ro 05-08-09 R. MONNIN F Update drawing to reflect curr

3、ent requirements. Changes to 1.5. Deleted unused group E boilerplate paragraphs. -rrp 11-02-16 C. SAFFLE THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHEET REV SHEET REV STATUS REV F F F F F F F F F F F F F OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 PMIC N/A PREPARED BY JOSEPH

4、A. KERBY DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY D. A. DiCENZO APPROVED BY MICHAEL A. FRYE MICROCIRCUIT, LINEAR, RADIATION HARDENED,

5、PRECISION INSTRUMENTATION AMPLIFIER, MONOLITHIC SILICON DRAWING APPROVAL DATE 88-02-10 AMSC N/A REVISION LEVEL F SIZE A CAGE CODE 67268 5962-88539 SHEET 1 OF 13 DSCC FORM 2233 APR 97 5962-E237-11 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDA

6、RD MICROCIRCUIT DRAWING SIZE A 5962-88539 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device

7、 class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following examples. For device classes M

8、and Q: 5962 - 88539 01 E A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Case outline (see 1.2.4) Lead finish (see 1.2.5) / / Drawing number For device class V: 5962 - 88539 01 V E A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)

9、 Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices m

10、eet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 AD524 Precision instrume

11、ntation amplifier 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as listed below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q designators will not be includ

12、ed in the PIN and will not be marked on the device. Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL

13、-PRF-38535 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88539 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outlines. The case outlines are as de

14、signated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,

15、 appendix A for device class M. 1.3 Absolute maximum ratings. 1/ Supply voltage (VS) . 18 V dc Internal power dissipation (PD) 280 mW Input voltage VSmaximum Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 10 seconds) +300C Thermal resistance Thermal resistance, junctio

16、n-to-case (JC) See MIL-STD-1835 Thermal resistance, junction-to-ambient (JA) : Case outline E . 95C/W Case outline 2 150C/W 1.4 Recommended operating conditions. Supply voltage (VS) . 6 V dc to 18 V dc Ambient operating temperature range (TA) . -55C to +125C 1.5 Radiation features. Maximum total dos

17、e available (dose rate = 50 300 rads(Si)/s) . 100 Krads(Si) 2/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of t

18、hese documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Elect

19、ronic Component Case Outlines. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ These parts may be dose rate sensitive in a space environment and may demonstrate enhan

20、ced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING

21、 SIZE A 5962-88539 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 4 DSCC FORM 2234 APR 97 DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at h

22、ttps:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes

23、precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herei

24、n or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class leve

25、l B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The

26、case outlines shall be in accordance with 1.2.4 herein . 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Block diagram. The block diagram shall be as specified on figure 2. 3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be as spec

27、ified on figure 3. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperatu

28、re range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may a

29、lso be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V s

30、hall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device clas

31、s M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a

32、certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm

33、 that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-

34、PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime-VA of change of product (see 6.2 herein) involving devices

35、 acquired to this drawing is required for any change that affects this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88539 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 5 D

36、SCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Gain error 1 GE1G = 1, VO= 10 V 1 01 .05 % M, D, P, L, R .05 Gain error 10 GE10G = 10, VO= 10 V 1 01 .25 % M,

37、D, P, L, R .25 Gain error 100 GE100G = 100, VO= 10 V 1 01 .5 % M, D, P, L, R .5 Gain error 1000 GE1000G = 1000, VO= 10 V 1 01 2.0 % M, D, P, L, R 2.0 Gain error drift 1 TCGE1G = 1, VO= 10 V 3/ 2, 3 01 5 ppm/C Gain error drift 10 TCGE10G = 10, VO= 10 V 3/ 2, 3 01 10 ppm/C Gain error drift 100 TCGE100

38、G = 100, VO= 10 V 3/ 2, 3 01 25 ppm/C Gain error drift 1000 TCGE1000G = 1000, VO= 10 V 3/ 2, 3 01 50 ppm/C Input offset voltage VOSIVIN= 0 V, TA= 25C 1 01 100 V M, D, P, L, R 1.0 mV Input offset voltage drift TCVOSIVIN= 0 V, G = 1000 3/ 2, 3 01 2 V/C Output offset voltage VOSOVIN= 0 V, TA= 25C 1 01

39、3 mV M, D, P, L, R 25 Output offset voltage drift TCVOSOVIN= 0 V, G = 1 3/ 2, 3 01 50 V/C Input bias current IBG = 1 1 01 -50 50 nA 2, 3 -70 70 M, D, P, L, R 1 1000 Input offset current IIOIIO= (IB+) - (IB-) G = 1 1 01 -35 35 nA 2, 3 -50 50 M, D, P, L, R 1 100 See footnotes at end of table. Provided

40、 by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88539 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test S

41、ymbol Conditions 1/ 2/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Common mode rejection CMRR1 G = 1 3/ VIN= 0 V to +10 V 1, 2, 3 01 70 dB Common mode rejection -CMRR1 G = 1 3/ VIN= 0 V to -10 V 1, 2, 3 01 70 dB Common mode rejection CMRR10 G = 10 3/ VI

42、N= 0 V to +10 V 1, 2, 3 01 90 dB Common mode rejection -CMRR10 G = 10 3/ VIN= 0 V to -10 V 1, 2, 3 01 90 dB Common mode rejection CMRR100 G = 100 3/ VIN= 0 V to +10 V 1, 2, 3 01 100 dB Common mode rejection -CMRR100 G = 100 3/ VIN= 0 V to -10 V 1, 2, 3 01 100 dB Common mode rejection CMRR1000 G = 10

43、00 3/ VIN= 0 V to +10 V 1, 2, 3 01 110 dB Common mode rejection -CMRR1000 G = 1000 3/ VIN= 0 V to -10 V 1, 2, 3 01 110 dB Power supply current ICCG = 1 1, 2, 3 01 5 mA M, D, P, L, R 1 5 Power supply rejection PSRR1 G = 1 3/ 4/ 1, 2, 3 01 75 dB Power supply rejection PSRR10 G = 10 3/ 4/ 1, 2, 3 01 95

44、 dB Power supply rejection PSRR100 G = 100 3/ 4/ 1, 2, 3 01 105 dB Power supply rejection PSRR1000 G = 1000 3/ 4/ 1, 2, 3 01 115 dB See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 59

45、62-88539 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ 2/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Input voltage V

46、INDifferential, linear, 3/ G = 1, TA= 25C 1 01 10 V Common mode, linear 3/ G = 1, TA= 25C 7 Differential, safe, TA= 25C 3/ 5/ 6/ 36 Common, safe, TA= 25C 3/ 5/ 6/ 36 1/ Devices supplied to this drawing have been characterized through all levels M, D, P, L, R of irradiation. However, this device is o

47、nly tested at the “R” level. Pre and Post irradiation values are identical unless otherwise specified in table I. VS= 15 V, RL= 2 k, unless otherwise specified. 2/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point li

48、mits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A. 3/ This parameter not tested post radiation. 4/ Power supply voltage tested at 15 V with a swing to 12 V. 5/ Input voltage (differential, safe) is the maximum voltage difference that c