DLA SMD-5962-88566 REV C-1994 MICROCIRCUIT DIGITAL DUAL ASYNCHRONOUS RECEIVER TRANSMITTER NMOS MONOLITHIC SILICON《硅单片双异步接收器 发送器沟道金属氧化物半导体数字微电路》.pdf

1、999999b 0054038 823 DEFENSE LOGISTICS AGENCY DEFENSf ELECTRONICS SUPPLY CENTER 1507 WILMINGTON PIKE DAYTON, OH 45444-5765 18 APR 1994 RE FER DESC-ELDC (Mr. Hess/(AV 986) 513-296-8526/tmh) SUBJECT: Notice of Revision (NOR) 5962-R128-94 for Standardized Military Drawing (SMD) 5962-88566. Military/Indu

2、stry Distribution The enclosed NOR is approved for use effective as of the date of the NOR. In accordance with MIL-STD-100 SMD holders should, as a minimum, handwrite those changes described in the NOR to sheet 1 of the subject SMD. After completion, the NOR should be attached to the subject SMD for

3、 future reference. Those companies who were listed as approved sources of supply prior to this action have agreed to actions taken on devices for which they had previously provided DESC a certificate of compliance. This is evidenced by an existing active current certificate of compliance on file at

4、DESC along with a DESC record of verbal coordination. The certificate of compliance for these devices is considered concurrence with the new revision unless DESC is otherwise notified. If you have comments or questions, please contact Tom Hess at (AV)986-8526 /(513)296-8526. 1 Encl MONICA L. POELKIN

5、G Chief , Custom Microelectronics Branch Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-9b 0054039 7bT 4. ORIGINATOR a. TYPED NAME (First, Middle Initial, b. ADDRESS (Street, City, State, Zip Code) 5. CAGE CODE Defense Electronics Sqply Center 67268

6、 1507 Uilmington Pike Dayton, OH 45444-5765 7. CAGE COOE 67268 Last) 10. REVISION LETTER a. CURRENT b. NEU 9. TITLE OF DOCUMENT UICROCIRCUIT, DIGITAL, DUAL ASYNCHRONOUS RECEIVER/TRANWlTTER MEIOS, MONOLITHIC SILICON B C NOTICE OF REVISION (NOR) 6. NOR NO. 5962- R 128-94 8. DOCUMENT NO. 5962-88566 11.

7、 ECP NO. 1. DATE (YYMMDD) I L 14. THIS SECTION FOR GOVERNMENT USE ONLY a. (X one) X (1) Existing docwnt supplemented by the NOR may be used in manufacture. (2) Revised docunent must be received before manufacturer may incorporate this change. (3) Custodian of master docwnt shall make above revision

8、and furnish revised docunent. b. ACTIVITY AUTHORIZED TO APPROVE CHANGE FOR GOVERNMENT c. TYPED NAME (First, Middle Initial, Last) 1 94- 03 - 25 This revision described below has been authorized for the docwnt listed. DESC-ELDC 3 Monica L. Poelking Form Approved OMB NO. 0704-0188 I d. TITLE Chief, Cu

9、stom Microelectronics 15a. ACTIVITY ACCOMPLISHING REVISION DESC-ELDC 2. PROCURING ACTIVITY NO. I e. SIGNATURE f. DATE SIGNED (Y YMMDD ) Monica L. Poelking 94-03-25 b. REVISION COMPLETED (Signature) c. DATE SIGNED (Y YMMDD ) Thomas M. Hess 94- 03 - 25 3. DODAAC Provided by IHSNot for ResaleNo reprodu

10、ction or networking permitted without license from IHS-,-,-9999996 0054040 481 DATE (“MDD) 93-04-23 NOTICE OF REVISION (NOR) (See MIL-STD-480 for instructions) This revision described below has been authorized for the document listed. Form Approved OMB NO. 0704-0188 Public reporting burden for this

11、collection is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other asp

12、ect of this collection of information, including suggestions for reducing this burden, to Washington Headquarters Services, Directorate for Information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302, and to the Office 2. CAGE CODE 67268 of Information and

13、Regulatory Affairs, Office of Management-and- Budget, Washing1 1. ORIGINATOR WE AND ADDRESS Defense Electronics Supply Center Dayton, Ohio 45444-5270 3. NOR No. 5962-R141-93 6. TITLE OF WCWENT MICROCIRCUIT, DIGITAL, DUAL ASYNCHRONOUS RECEIVER/TRANSMIlTER WS, mmolITHIC SILICON 7. REVISIN LETTER (Curr

14、ent) A 9. CONFIGURATION ITEM (OR SYSTEM) TO WHICH ECP APPLIES AI I (New) B SIGNATURE AND TITLE Monica L. Poelking CHIEF, CUSTOM MICROELECTRONICS REVISION COMPLETED (Signature) Thomas M. Hess 4. U6E CODE 67268 DATE (YYMMDD) 93-04-23 DATE (YYMMDD) 93-04-23 5. WCUIIENT No. 5962-88566 IO. DESCRIPTION OF

15、 REVISION Sheet 1: Revisions ltr column; add “B“ Revisions description column; add “Changes in accordance with Revisions date column; add “93-04-23“. Revision level block change from “A“ to “B“ Rev status of sheets for sheets 1, 4, 7, 10 from “A“ to “B“ NOR 5962-R141-93“. Sheet 4: Change Table 1, Sy

16、mbol IIL (XI) as follows, from: V = O V, X2 grounded 01, 02 I 1,2,3 I -4.0 I 0.0 1 mA I 03 I 1,2,3 I -1.0 I I I to: VI = O V, X2 grounded I Change status of revision level block from “A“ to “6“ Change sfatus of revision level block from “A“ to “B“ Sheet IO: Add note lo/ This parameter is guaranteed

17、but not tested. Change status of revision level block from “A“ to “6“ All I 1,2,3 I -4.0 I 0.0 I mA Sheet 7: Change t from: Data setup time to CLK high to: Data setup time CLK high Q/ 11. THIS SECTION FOR GOVERNMENT USE ONLY a. CHECK ONE X EXISTING DOCUMENT SUPPLEMENTED BY THIS NOR MAY BE USED IN MA

18、NUFACTURE. b. ACTIVITY AUTHORIZED TO APPROVE CHANGE FOR GOVERNMENT DESC-ECC 12. ACTIVITY ACCCMPLISHING REVISION DESC-ECC iD Form 1695, JUL 88 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-W 9999996 00540YL 314 W DESCRI PT1 ON Recommended operating

19、condition, changed high level input voltage from 2.0 V to 2.3 V. conf i aurat ion from devi ce LTR DATE (YR-HO-DA) APPROVED 92-02-12 A REV SHEET REV SHEET REVISIONS I I AAA 35 36 37 15 16 17 SHEET Deleted type 03 to term changes 123 pin numbers 6.6 pin de na1 connect throughout. PMIC N/A STANDAFtDIZ

20、ED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC NIA )tX IUKM 1YJ JUL 91 criptron section. Changes ons on figure 2. Editorial REV CHECKED BY Ray Monnin APPROVED BY Michael Frye DRAWING APPROVAL DATE 29 MARCH 1988 REVISION LEVEL A

21、 DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 MICROCIRCUIT, DIGITAL, DUAL ASYNCHRONOUS RECEIVER/TRANSMITTER NMOS, MONOLITHIC SILICON 7 67268 5962-88566 SHEET 1 OF 38 5962-E128 DISTRIBUTION STATEMENT A. Approved for public release: distribution is unlimited. Provided by IHSNot for ResaleNo re

22、production or networking permitted without license from IHS-,-,-9999976 005404Z 254 y-;,. , STANDARDIZED MILITARY DRAWNG DEFENSE ELECTRONICS SUPPLY CENTER 1. SCOPE 1.1 scoP_e. 1.7 Part or Idcnlifyirq Nu&cr (PIN)-. This drawing describes device requirements for class E microcircuits in accordance wit

23、h 1.2.1 of HIL-STO-883. “Provisions for the use of MIL-STO-883 in conjunction with conpliant non-JAN devices“. The conplete PIN shall be as shown iri the following exanple: T Lead finish per MI C -14-385 1 O I- Case out l ine (see 1.2.2) I- 5962-88566 Drawing nuder Devi ce type (see 1.2.1) I 1.2.1 D

24、evice type(s1. lhe device type(s) shall identify the circuit function as follows: Dev i ce type Generic number Circuit function SIZE 5962-88566 A o1 o2 03 2681 Dual asynchronous receiver/transrni tter (DUART) 2681 Dual asynchronous receiver/transmittet (WART) with 7-bit input and 8-bit output ports

25、68681 Dua 1 asynchronous receiver/transmi tter (OURT) 1.2.2 Case outline(s1. The case outline(s) shall be as designated in appendix C of MIL-H-38510, and as follows: Out 1 ine letter Case outline D-5 (40-lead. 2.096“ x .620“ x .225“). dual-in-line package 0-10 (28-lead, 1.490“ x .610“ x .232“). dual

26、-in-line package See figure I(52-lead. 1.330“ x .660“ x .lOO“), flat package C-5 (44-terminal. .662“ x .662 x .120“). square chip carrier package 1.3 1.4 Absolute maximum ratinqs. Supply voltage range - - - - - - - - - - - - - - Storage temperature range- - - - - - - - - - - - -0.5 V dC to t6.0 V dc

27、 -65C to +15O0C lu t30OC +175C see MIL-M-38510, appendix C Maximum power dissipation (PD) - - - - - - - - - Lead tenperature (soldering, 5 seconds)- - - - - Junction temperature (TJIT - - - - - - - - - - - Thermal resistance, junction-to-case (eJc): Cases X, Q, U- - - - - - - - - - - - - - - - - Cas

28、ey- 2ooc/u Recomnded operatira conditions. Supply voltage (Vcc) - - - - - - - - - - - - - - High level input voltage (logic inputs)(VIH): Devices 01. 02, and 03 - - - - - - - - - - - - Device 03 (pin Xl/CLK only)- - - - - - - - - - Low level input voltage (logic inputs)(VIL)- - - 4.5 V dc to 5.5 V d

29、c 2.3 V dc 4.0 V dc 0.8 V dc -400 2.4 RA -55C to +125*C Maximim high level output current (I - - - - - Case operating temperature range (3- - - - - - Maximum low levei output current (i 09- - - - - DAYTON, OBI0 45444 I REVISION LEVEL I SHEET I I A I 2 DESC FORM 193A JUL 91 Provided by IHSNot for Res

30、aleNo reproduction or networking permitted without license from IHS-,-,-9999996 0054043 190 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing shall take precedence. 3. REQUIREMENTS 3.1 Item requirements. The

31、 individual item requirements shall be in accordance with 1.2.1 of MIL-STD-883, - Microcircuits, General Specification for. STANDARDIZED MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 - Test Methods and Procedures for Microelectronics. 5962-88566 SIZE A REVISION LEVEL SHEET A

32、3 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-= qb 0054044 O27 I TABLE 1. Electrial performance characteristics. I I I I I I l Test l i i - I/ 2/ y i i- .i i I Conditions i i i i -55C T, 5 +12SC /Device !Group A 1 Limits Illnit i i Isylbol I vcc

33、= 5 v *lo% ItYW Isub- I I I Igroups 1 Hin I Maw I I I unless othervise specified 1 5962-88566 STANDARDIZED SIZE MILITARY DRAWING A DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL SET A 4 r I l I SI I All I 1,2,3 I 2.3 I IV I I I 1 .I I I I All I 1,2,3 I 4.0 1 IV I I I I I I I 1 I

34、 I I I I I I I I I I I I I I I I All I 1,2,3 I 2.7 I IV I I I I l I I I I I I 1 I 1 I l I I I I I I -1 Input high voltage IVIH I Input high voltage (Xl/CLlo IVIH I Output low voltage (VOL IIol = 2.4 .A Output high voltage (except IV, II, = -a PA (except XI/CLK) I l I 1 I 0.4 I V I ALL I 1/2,3 I open

35、 collector outputs) I 1 I I I l I ALL I 1,2,3 1-10 I 10 I Input leakage current JIIL IVI = o Y to Ve, 1 Data bus three-state leakage iIozL, IVo = 0.4 V to Vcc 1 All 1 1,2,3 1-70 i 10 i FA 1 current IOZH I I I I I I i I I I I I I I IVI = O V, x2 grounded JO1,Z I 1,2,3 14.0 I 0.0 mA I 03 I 1.2,3 1-1.0

36、 I I I All I 1,2,3 1-3.0 1 0.0 I IA IV, = o v, x2 floated Ki) I Xl/CLK low input current I I I I I I 1 I I I I I I I I I I I I I I ALL I 1,2,3 1-1.0 I 1.0 I OIA I All I 1,2,3 I 0.0 110.0 I mA I IVI = vcc, X2 grounded XI/CLK high input current lkl I IVI = vcc, x2 f loated I I I l I I I I I I I I I 1

37、I I I I I I I I I I I I I I I AL1 I 1,2,3 1-100 I 0.0 1 jiA IVI O V, XI/CLK floated IVI = Vcc, Xl/CLK floated I I I X2 low input current II it&) I I I I I I I All I 1,2,3 1-0.0 I 100 I FA !:i% I X2 high input current pen collector output leakage IIoH IV, = 0.4 V to VcC i All i 1,2,3 i-10 i 10 i PA c

38、urrent I I I I I I I I I I I l I I Power supply current ir, IVcc = 5.5 V, TC = +2SoC i All i 1,2 i i150 RA and t125C I I I I I 1 175 1 mA I IVcc = 5.5 v, TC = -55OC l ALL I 3 I I I I I I I I l I I I I I l I I See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking p

39、ermitted without license from IHS-,-,-9999996 0054045 T63 = Funct iona 1 testing TABLE I. Electrical perfomnce characteristics - Continued. ISee 4.3.ld All I 7,8 I I Test STANDARDIZED MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 II Conditions II I I unless ofkenvise specifie

40、d I I SIZE 5962-88566 A REVISION LEVEL SHEET 5 Input capacitance I I I I -0v ICIN 1 MHz i 1 I I lOW I L AO-A3 setup time to RN, WRN ItAs ISee figure 5 41 I I I CEN setup time to RDN, UND ItCS I lOW I L I CEN hold tim from RDN, WRN ItCH I hioh I I URN, RON pulse width II I tRW I I I Itm I Data valid

41、after RDN low I L Data bus floating after RDN ItoF I hiqh I L I I Data setup time before WRN itDS i high I 1 I Data hold time after WRN high (to, I I I I I High time between READS and/ (tRm I or WRITES s/ o/ I I I 101.02 9.10.11 L 1 I 101.02 9.10.11 I I 101.02 19.10,ll - I I 101.02 19.10,11 - I 101.

42、02 19,10,11 I I I 101.02 9,10,11 I i L -t-t- I I 4-P 01 I ns I i I I ns I 225 I I I I 175 I J I I I I J I I I I I I 01,02 19,10,11 I 100 I I ns I I I I 101,OZ 19,10,11 I I 100 I ns l I I I 101.02 9,lO.ll I 20 1 I ns 1 I I I I I I I I I )01,02 9,lO.ll I 200 I I “S I I l I I See footnotes at end of ta

43、ble. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-W 9b 005404b 9TT W ,9,10,11 I RxC frequency (1X) mtinued. fRX L I TABLE I. Electrical Derforinance characteristics - Conditions Test I unless otkernise specified I j I uiYa I I I I STANDARDIZED MIL

44、ITARY DRAWING DEFENSE ELECTROI?ICS SUPPLY CENTER I I I SIZE A GOUP A i Limits Lnit sub- I I I groups I Hin I Max I I 1 I i INTRN (or OP3-OP7 when Used as interrupts) negated from: I i 1 II I I I I I Read RHR (RxRDY/FFULL ftIR1 I interrupt 1 I I I I0leo2 I I Write THR (TxRDY interrupt) ItIR2 , l01,02

45、 I I I I t Reset cosnand (delta break t13 interruPt 1 interruPt 1 Stop C/T comiiind (counter 9.10.11 I I 1 300 1 ns L I I I300 I ns I I I I Read IPCR (input port ltIR5 1 I I chanae interrupt) Write IHR (clear of interrupt mask bit) Xl/ClK high or low tim ItiR6 i I I 9.10.11 9.10.11 9.10.11 - 9,10,11

46、 9,10,11 CTCLK ( IP2) frequency lfCTC i I 101.02 i- 9.10.11 I I jo1.02 Ikx I I RxC high or low time I 101.02 9.10.11 I I O I 2.0 IHHz I I o I 1.0 I“* I 220 1 I ns 9.10.11 Y I TxC high or low time I /01,02 See footnotes at end of table. 5962-88566 SHEET 6 DAYTON, OHIO 45444 I REVISION LEVEL I I I DES

47、C FORM 193A JUL 91 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-b 0054047 836 m I Conditions TABLE I. Electrical performance characteristics - Continued. I I I Test 03 TxC frequency (16X) I I I 9.10.11 I 175 I ns TxC frequency (1X) TxD output dela

48、y from TxC low - I tDS I Output delay from TxC low to TxD data output I I I 03 19,10,11 100 I “s RxD data setup time to RxC high STANDARDIZED MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 RxD data hold time from RxC SIZE 962-88566 A REVISION LEVEL SHEET 7 RESETN pulse width A

49、l-A4 setup to CSN low Al-A4 hold time from CSN high R/WN setup time to CSN high R/WN holdup time to CSN high CSN high pulse width 71 CSN or IACKN high from 8J DTACKN low Data val id from CSN or IACKN 1 ow Data bus floating from CSN Data setup time to CLK high or IACKN high See footnotes at end of table. Cy