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本文(DLA SMD-5962-88576 REV B-2011 MICROCIRCUIT DIGITAL HIGH SPEED CMOS DUAL 4-INPUT AND GATE MONOLITHIC SILICON.pdf)为本站会员(priceawful190)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-88576 REV B-2011 MICROCIRCUIT DIGITAL HIGH SPEED CMOS DUAL 4-INPUT AND GATE MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add logic diagram. Add notes to figure 4, switching waveforms and test circuit. Update boilerplate to MIL-PRF-38535 requirements. LTG 05-06-14 Thomas M. Hess B Update boilerplate paragraphs to the current MIL-PRF-38535 requirements. - LTG 11-12-1

2、9 Thomas M. Hess REV SHET REV SHET REV STATUS REV B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 PMIC N/A PREPARED BY James E. Nicklaus DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL D

3、EPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A CHECKED BY D. A. DiCenzo APPROVED BY Michael A. Frye MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, DUAL 4-INPUT AND GATE, MONOLITHIC SILICONDRAWING APPROVAL DATE 88-08-10 REVISION LEVEL B SIZE A CAGE CODE 67268 5962-88576 SHEET 1 OF 10 DSCC FOR

4、M 2233 APR 97 5962-E005-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88576 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing

5、 describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A. 1.2 Part or Identifying Number (PIN). The complete PIN is as shown in the following example: 5962-88576 01 C A Drawing number Device type (see 1.2.1) Case outli

6、ne(see 1.2.2) Lead finish(see 1.2.3)1.2.1 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54HC21 Dual 4-input AND gate 1.2.2 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline lett

7、er Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line D GDFP1-F14 or CDFP2-F14 14 Flat pack 2 CQCC1-N20 20 Square chip carrier 1.2.3 Lead finish. The lead finish is as specified in MIL-PRF-38535, appendix A. 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage r

8、ange (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC+ 0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc Clamp diode current (IIK, IOK) 20 mA DC output current (per pin) (IOUT) . 25 mA DC VCCor GND current (per pin) . 50 mA Storage temperature range (TSTG

9、) -65C to +150C Maximum power dissipation (PD) . 500 mW 4/ Lead temperature (soldering, 10 seconds) . +260C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) . +175C 1.4 Recommended operating conditions. Supply voltage range (VCC) +2.0 V dc to +6.0 V dc Case oper

10、ating temperature range (TC) . -55C to +125C Input rise or fall time (tr, tf): VCC= 2.0 V . 0 to 1000 ns VCC= 4.5 V . 0 to 500 ns VCC= 6.0 V . 0 to 400 ns 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade perf

11、ormance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to ground. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C. 4/ For TC= +100C to +125C, derate linearly at 12 mW/C. Pro

12、vided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88576 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standard

13、s, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrate

14、d Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDB

15、K-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s

16、) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents cited in the solicitation or contract. JEDEC SOLID STATE TECHNOLOGY ASSOCIATION (JEDEC) JEDEC Standard No. 7 - Standard for Description of 54/74HCXXXXX and 54/74HCTXXXXX Advanced

17、High-Speed CMOS Devices. (Copies of these documents are available online at http:/www.jedec.org or from JEDEC Solid State Technology Association, 3103 North 10thStreet, Suite 240-S Arlington, VA 22201). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the refe

18、rences cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-385

19、35, appendix A for non-JAN class level B devices and as specified herein. Product built to this drawing that is produced by a Qualified Manufacturer Listing (QML) certified and qualified manufacturer or a manufacturer who has been granted transitional certification to MIL-PRF-38535 may be processed

20、as QML product in accordance with the manufacturers approved program plan and qualifying activity approval in accordance with MIL-PRF-38535. This QML flow as documented in the Quality Management (QM) plan may make modifications to the requirements herein. These modifications shall not affect form, f

21、it, or function of the device. These modifications shall not affect the PIN as described herein. A “Q“ or “QML“ certification mark in accordance with MIL-PRF-38535 is required to identify when the QML flow option is used. 3.2 Design, construction, and physical dimensions. The design, construction, a

22、nd physical dimensions shall be as specified in MIL-PRF-38535, appendix A and herein. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.2 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. Provided by IHSNot for ResaleNo reproduction

23、or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88576 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic dia

24、gram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4. 3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified i

25、n table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are described in table I. 3.5 Marking. Marking shall be in accordance with

26、 MIL-PRF-38535, appendix A. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“

27、on the device. 3.5.1 Certification/compliance mark. A compliance indicator “C” shall be marked on all non-JAN devices built in compliance to MIL-PRF-38535, appendix A. The compliance indicator “C” shall be replaced with a “Q“ or “QML“ certification mark in accordance with MIL-PRF-38535 to identify w

28、hen the QML flow option is used. 3.6 Certificate of compliance. A certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6 herein). The certificate of compliance submitted to DLA Land and Maritime -VA prior to list

29、ing as an approved source of supply shall affirm that the manufacturers product meets the requirements of MIL-PRF-38535, appendix A and the requirements herein. 3.7 Certificate of conformance. A certificate of conformance as required in MIL-PRF-38535, appendix A shall be provided with each lot of mi

30、crocircuits delivered to this drawing. 3.8 Notification of change. Notification of change to DLA Land and Maritime -VA shall be required for any change that affects this drawing. 3.9 Verification and review. DLA Land and Maritime, DLA Land and Maritimes agent, and the acquiring activity retain the o

31、ption to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE

32、 A 5962-88576 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Test conditions 1/ -55C TC+125C unless otherwise specified Device type Group A subgroups Limits Unit Min Max High level output vol

33、tage VOHVIN= VIHor VILIOH= -20 A VCC= 2.0 V All 1, 2, 3 1.9 V VCC= 4.5 V 4.4 VCC= 6.0 V 5.9 VIN= VIHor VILIOH= -4.0 mA VCC= 4.5 V 3.7 VIN= VIHor VILIOH= -5.2 mA VCC= 6.0 V 5.2 Low level output voltage VOLVIN= VIHor VILIOL= +20 A VCC= 2.0 V All 1, 2, 3 0.1 V VCC= 4.5 V 0.1 VCC= 6.0 V 0.1 VIN= VIHor V

34、ILIOL= +4.0 mA VCC= 4.5 V 0.4 VIN= VIHor VILIOL = +5.2 mA VCC= 6.0 V 0.4 High level input voltage 2/ VIHVCC= 2.0 V All 1, 2, 3 1.5 V VCC= 4.5 V 3.15 VCC= 6.0 V 4.2 Low level input voltage 2/ VILVCC= 2.0 V All 1, 2, 3 0.3 V VCC= 4.5 V 0.9 VCC= 6.0 V 1.2 Input leakage current IINVCC= 6.0 V, VIN= VCCor

35、 GND All 1, 2, 3 1.0 A Quiescent current ICCVCC= 6.0 V, VIN= VCCor GND All 1, 2, 3 40 A Input capacitance CINVIN= 0.0 V, TC= +25C See 4.3.1c All 4 10 pF Functional tests See 4.3.1d All 7 Propagation delay time, input mA, mB, mC, or mD to output mY 3/ tPHL, tPLH CL= 50 pF 10% See figure 4 VCC= 2.0 V

36、All 9 175 ns 10, 11 265 VCC= 4.5 V 9 35 10, 11 53 VCC= 6.0 V 9 30 10, 11 45 Transition time 4/ tTHL, tTLH CL= 50 pF 10% See figure 4 VCC= 2.0 V All 9 75 ns 10, 11 110 VCC= 4.5 V 9 15 10, 11 22 VCC= 6.0 V 9 13 10, 11 19 See footnotes on next sheet. Provided by IHSNot for ResaleNo reproduction or netw

37、orking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88576 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. 1/ For a power supply of 5.0 V 10%, the worst case o

38、utput voltage (VOHand VOL) occur at VCC= 4.5 V. Thus, the 4.5 V values should be used when designing with this supply. Worst case VIHand VILoccur at VCC= 5.5 V and 4.5 V, respectively. (The VIHvalue at 5.5 V is 3.85 V). The worst case leakage currents (IINand ICC) occur for CMOS at the higher voltag

39、e so the 6.0 V value should be used. Power dissipation capacitance (CPD), typically 100 pF, determines the no-load dynamic power consumption (PD) and the no-load dynamic current consumption (IS). Where: PD= CPDVCC2f + ICCVCCIS= CPDVCCf + ICCf is the frequency of the input signal. 2/ Test not require

40、d if applied as a forcing function for VOHor VOL. 3/ AC testing at VCC= 2.0 V and VCC= 6.0 V shall be guaranteed, if not tested, to the specified parameters. 4/ Transition time (tTLH, tTHL), if not tested, shall be guaranteed to the specified parameters. Device type All Case outlines C and D 2 Termi

41、nal number Terminal symbol Terminal symbol 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 1A 1B NC 1C 1D 1Y GND 2Y 2A 2B NC 2C 2D VCC- - - - - - NC 1A 1B NC NC 1C NC 1D 1Y GND NC 2Y 2A 2B NC NC NC 2C 2D VCCNC = No internal connection FIGURE 1. Terminal connections. Provided by IHSNot for ResaleN

42、o reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88576 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 Inputs Outputs mA mB mC mD mY L L L L L L L L H L L L H L L L L H H L L H L L L L H L H L

43、 L H H L L L H H H L H L L L L H L L H L H L H L L H L H H L H H L L L H H L H L H H H L L H H H H H H = High voltage level L = Low voltage level FIGURE 2. Truth table. FIGURE 3. Logic diagram. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD

44、 MICROCIRCUIT DRAWING SIZE A 5962-88576 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 8 DSCC FORM 2234 APR 97 NOTES: 1. CL= 50 pF minimum or equivalent (includes test jig and probe capacitance). 2. Input signal from pulse generator: VIN= 0.0 V to VCC; PRR 1 MHz; ZO= 50; tr 6

45、.0 ns; tf 6.0 ns; trand tfshall be measured from 10% of VCCto 90% of VCCand from 90% of VCCto 10% of VCC, respectively; duty cycle = 50 percent. 3. The outputs are measured one at a time with one transition per measurement. FIGURE 4. Switching waveforms and test circuit. Provided by IHSNot for Resal

46、eNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88576 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 9 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. Sampling and inspection procedures shall b

47、e in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. Screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. The following additional criteria shall apply: a. Burn-in test, method 1015 of MIL-STD-883.

48、(1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall b

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