ImageVerifierCode 换一换
格式:PDF , 页数:11 ,大小:77.10KB ,
资源ID:699248      下载积分:10000 积分
快捷下载
登录下载
邮箱/手机:
温馨提示:
如需开发票,请勿充值!快捷下载时,用户名和密码都是您填写的邮箱或者手机号,方便查询和重复下载(系统自动生成)。
如填写123,账号就是123,密码也是123。
特别说明:
请自助下载,系统不会自动发送文件的哦; 如果您已付费,想二次下载,请登录后访问:我的下载记录
支付方式: 支付宝扫码支付 微信扫码支付   
注意:如需开发票,请勿充值!
验证码:   换一换

加入VIP,免费下载
 

温馨提示:由于个人手机设置不同,如果发现不能下载,请复制以下地址【http://www.mydoc123.com/d-699248.html】到电脑端继续下载(重复下载不扣费)。

已注册用户请登录:
账号:
密码:
验证码:   换一换
  忘记密码?
三方登录: 微信登录  

下载须知

1: 本站所有资源如无特殊说明,都需要本地电脑安装OFFICE2007和PDF阅读器。
2: 试题试卷类文档,如果标题没有明确说明有答案则都视为没有答案,请知晓。
3: 文件的所有权益归上传用户所有。
4. 未经权益所有人同意不得将文件中的内容挪作商业或盈利用途。
5. 本站仅提供交流平台,并不能对任何下载内容负责。
6. 下载文件中如有侵权或不适当内容,请与我们联系,我们立即纠正。
7. 本站不保证下载资源的准确性、安全性和完整性, 同时也不承担用户因使用这些下载资源对自己和他人造成任何形式的伤害或损失。

版权提示 | 免责声明

本文(DLA SMD-5962-88577 REV D-2008 MICROCIRCUIT DIGITAL ECL 3 INPUT OR-AND OR-AND-INVERT GATE MONOLITHIC SILICON.pdf)为本站会员(towelfact221)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-88577 REV D-2008 MICROCIRCUIT DIGITAL ECL 3 INPUT OR-AND OR-AND-INVERT GATE MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add “Changes in accordance with NOR 5962-R019-92“. -tvn 91-11-25 M. L. Poelking B Add “Changes in accordance with NOR 5962-R070-99“. -ljs 99-08-13 M. L. Poelking C Update to reflect latest changes in format and requirements. Editorial changes thr

2、oughout. -les 01-04-24 Raymond Monnin D Update drawing to current requirements. Editorial changes throughout. - gap 08-10-24 Robert M. Heber The original first sheet of this drawing has been replaced. REV SHET REV SHET REV STATUS REV D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 PMIC N/A

3、PREPARED BY Christopher A. Rauch DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Ray Monnin COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A. Frye MICROCIRCUIT, DIGITAL, ECL, 3 INPUT OR-AND/OR-AND-INVE

4、RT GATE, AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 88-07-22 MONOLITHIC SILICON AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 5962-88577 SHEET 1 OF 10 DSCC FORM 2233 APR 97 5962-E195-08 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from

5、IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88577 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance

6、with MIL-PRF-38535, appendix A. 1.2 Part or Identifying Number (PIN). The complete PIN is as shown in the following example: 5962-88577 01 E X Drawing number Device type (see 1.2.1) Case outline(see 1.2.2) Lead finish(see 1.2.3)1.2.1 Device type(s). The device type(s) identify the circuit function a

7、s follows: Device type Generic number Circuit function 01 10521 3-input OR-AND/OR-AND-INVERT gate 1.2.2 Case outlines. The case outlines are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line F GDFP2-F1

8、6 or CDFP3-F16 16 Flat package 2 CQCC1-N20 20 Square leadless chip carrier 1.2.3 Lead finish. The lead finish is as specified in MIL-PRF-38535, appendix A. 1.3 Absolute maximum ratings. Supply voltage . -8.0 V dc to 0.0 V dc Input voltage (VIN) . 0.0 V dc to -5.2 V dc Storage temperature range . -65

9、C to +165C Maximum power dissipation (PD) . 130 mW Lead temperature (soldering, 10 seconds) +300C Thermal resistance, junction-to-case (JC) See MIL-STD-1835 Junction temperature (TJ) +165C 1.4 Recommended operating conditions. Supply voltage range (VEE) -4.94 V dc minimum to -5.46 V dc maximum Minim

10、um high-level input voltage (VIH): TA= +25C . -0.780 V dc TA= +125C . -0.630 V dc TA= -55C . -0.880 V dc Maximum low- level input voltage (VIL): TA= +25C . -1.850 V dc TA= +125C . -1.820 V dc TA= -55C . -1.920 V dc Provided by IHSNot for ResaleNo reproduction or networking permitted without license

11、from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88577 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks f

12、orm a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFEN

13、SE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are av

14、ailable online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of t

15、his drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class l

16、evel B devices and as specified herein. Product built to this drawing that is produced by a Qualified Manufacturer Listing (QML) certified and qualified manufacturer or a manufacturer who has been granted transitional certification to MIL-PRF-38535 may be processed as QML product in accordance with

17、the manufacturers approved program plan and qualifying activity approval in accordance with MIL-PRF-38535. This QML flow as documented in the Quality Management (QM) plan may make modifications to the requirements herein. These modifications shall not affect form, fit, or function of the device. The

18、se modifications shall not affect the PIN as described herein. A “Q“ or “QML“ certification mark in accordance with MIL-PRF-38535 is required to identify when the QML flow option is used. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as

19、 specified in MIL-PRF-38535, appendix A and herein. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.2 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Tes

20、t circuit. The test circuit shall be as specified on figure 3. 3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test

21、requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are described in table I. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88

22、577 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 3.5 Marking. Marking shall be in accordance with MIL-PRF-38535, appendix A. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. F

23、or packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. 3.5.1 Certification/compliance mark. A compliance indicator “C” shall be marked on all non-JAN devices built in compliance to MIL

24、-PRF-38535, appendix A. The compliance indicator “C” shall be replaced with a “Q“ or “QML“ certification mark in accordance with MIL-PRF-38535 to identify when the QML flow option is used. 3.6 Certificate of compliance. A certificate of compliance shall be required from a manufacturer in order to be

25、 listed as an approved source of supply in MIL-HDBK-103 (see 6.6 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply shall affirm that the manufacturers product meets the requirements of MIL-PRF-38535, appendix A and the requirements herein. 3

26、.7 Certificate of conformance. A certificate of conformance as required in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change. Notification of change to DSCC-VA shall be required for any change that affects this drawing. 3

27、.9 Verification and review. DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 4. VERIFICATION 4.1 Sampling and inspection. S

28、ampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. Screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. The following additional criteria shall apply: a. B

29、urn-in test, method 1015 of MIL-STD-883. (1) Test condition D or E. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, bias

30、es, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein, except interim electrical parameter tests prior to burn-in are optional a

31、t the discretion of the manufacturer. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88577 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Ele

32、ctrical performance characteristics. Test Symbol Conditions -55C TA+125C Group A subgroups Limits Unit unless otherwise specified Min Max Cases E, F, and 2 Quiescent tests 1/ 2/ VIHVILHigh level output voltage VOH-0.780 -0.630 -0.880 -1.850 -1.820 -1.920 1 2 3 -0.930 -0.825 -1.080 -0.780 -0.630 -0.8

33、80 V Low level output voltage VOLOutputs terminated through 100 to -2 V VCC= 0.0 V VEE= -5.2 V 3/ -0.780 -0.630 -0.880 -1.850 -1.820 -1.920 1 2 3 -1.850 -1.820 -1.920 -1.620 -1.545 -1.655 V High level threshold output voltage VOHA-1.105 -1.000 -1.255 -1.475 -1.400 -1.510 1 2 3 -0.950 -0.845 -1.100 -

34、0.780 -0.630 -0.880 V Low level threshold output voltage VOLA-1.105 -1.000 -1.255 -1.475 -1.400 -1.510 1 2 3 -1.850 -1.820 -1.920 -1.620 -1.525 -1.635 V Power supply drain current 5/ IEEVEE= -5.46 V, VCC= 0.0 V, VIH= -0.780 V at +25C, VIH= -0.630 V at +125C, VIH= -0.880 V at -55C 1 2, 3 -29 -29 mA H

35、igh level input current IIH1C1 1 2, 3 245 415 A IIH2C1, B2 1 2, 3 310 525 A Low level input current IILVEE= -4.94 V, VCC= 0.0 V, VIL= -1.850 V at +25C, VIL= -1.820 V at +125C, VIL= -1.920 V at -55C 1, 3 2 0.5 0.3 A Cases E, F, and 2 AC tests Transition time tPLH, tPHL9 10 11 1.1 0.9 1.0 4.0 4.4 4.5

36、ns Propagation delay time tPLH, tPHL, tPHH, tPLLVEE= -3.2 V, VCC= +2.0 V CL 5 pF, RL= 100 See figure 3 4/ 9 10 11 1.4 1.1 1.2 3.5 3.9 3.8 ns See footnotes on next page. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZ

37、E A 5962-88577 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 1/ The quiescent limits are determined after a device has reached thermal equilibrium. This is defined as the reading taken with the device in a socket with 500 LFPM of +25C or -55C

38、 (as applicable) air blowing on the unit in a transverse direction with power applied for at least 4 minutes before the reading is taken. This method was used for theoretical limit establishment only. 2/ The T test method creates the limits and test conditions to be used after an increased ambient t

39、emperature has been stabilized by external thermal sources. This adjusted temperature simulates the quiescent method by increasing the specified case temperature (+25C, +125C, -55C) with a T. The T is theoretically determined based on the power dissipation and thermal characteristics of the device a

40、nd package used. 3/ The high and low level output current varies with temperature, and can be calculated using the following formula: IOH= (-2 V -VOH)/100 and (-2 V -VOL)/100 . 4/ CLincludes the scope probe, wiring, and stray capacitance without the package in the test fixture. tPHHis measured from

41、the midpoint of a high input to the midpoint of a high output. tPLLis measured from the midpoint of a low input to the midpoint of a low output. Voltage waveforms for tPLHand tPHLshall be in accordance with method 3003 of MIL-STD-883 with the transition point being 50 percent of the maximum input or

42、 output voltage. Voltage waveforms for tTLHand tTHLshall be in accordance with method 3004 of MIL-STD-883, with measurement points at 20 percent and 80 percent. See test circuit, figure 3. 5/ The IEElimits, although specified in the minimum column, shall not be exceeded, in magnitude, as a maximum v

43、alue. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88577 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 7 DSCC FORM 2234 APR 97 Case outlines E F 2 Terminal number 1 VCC1D2

44、 NC 2 Y E2 VCC13 Y F2 Y4 F1 VCC2Y 5 E1 VCC1F1 6 D1 Y NC 7 C1 Y E1 8 VEEF1 D1 9 B1 E1 C1 10 A D1 VEE11 B2 C1 NC 12 C2 VEEB1 13 D2 B1 A 14 E2 A B2 15 F2 B2 C2 16 VCC2C2 NC 17 D2 18 E2 19 F2 20 VCC2NC = No connection FIGURE 1. Terminal connections. Inputs Outputs A B C D E F Y Y L L L X X X L H X X X L

45、 L L L H All other combinations H L H = High voltage level steady state L = Low voltage level steady state X Irrelevant FIGURE 2. Truth table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88577 DEFENSE SUP

46、PLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 8 DSCC FORM 2234 APR 97 NOTES: 1. All power supply levels are shown shifted 2 volts positive. 2. Pulse generator must be capable of rise and fall times of 2.0 ns. 3. 50 resistor in series with 50 coaxial cable constitutes the 100 l

47、oad. FIGURE 3. Test circuit. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88577 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 9 DSCC FORM 2234 APR 97 TABLE II. Electrical

48、test requirements. MIL-STD-883 test requirements Subgroups (in accordance with MIL-STD-883, method 5005, table I) Interim electrical parameters (method 5004) 1 Final electrical test parameters (method 5004) 1*, 2, 3, 7*, 8, 9 Group A test requirements (method 5005) 1, 2, 3, 7, 8, 9, 10, 11 Groups C and D end-point electrical parameters (method 5005) 1, 2, 3 * PDA applies to subgroup 1. 4.3 Quality conformance inspection. Quality conformance inspection shall be in accordance with method 50

copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
备案/许可证编号:苏ICP备17064731号-1