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本文(DLA SMD-5962-88605 REV C-2008 MICROCIRCUIT DIGITAL BIPOLAR HIGH PERFORMANCE 10-BIT BUFFER MONOLITHIC SILICON.pdf)为本站会员(cleanass300)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-88605 REV C-2008 MICROCIRCUIT DIGITAL BIPOLAR HIGH PERFORMANCE 10-BIT BUFFER MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Paragraph 1.3 absolute maximum, correct input voltage range. Editorial changes throughout. 90-08-14 W. K. Heckman B Add vendor cage 0DKS7. Add device type 03. Update boilerplate to MIL-PRF-38535 requirements. Editorial changes throughout - jak. 0

2、1-03-05 Thomas M. Hess C Update drawing to current requirements. Editorial changes throughout. - gap 08-12-05 Robert M Heber REV SHET REV SHET REV STATUS REV C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 PMIC N/A PREPARED BY Greg A. Pitz DEFENSE SUPPLY CENTER COLUMBUS STAND

3、ARD MICROCIRCUIT DRAWING CHECKED BY Raymond Monnin COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A. Frye MICROCIRCUIT, DIGITAL, BIPOLAR HIGH PERFORMANCE 10-BIT BUFFER, AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROV

4、AL DATE 88-03-08 MONOLITHIC SILICON AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-88605 SHEET 1 OF 13 DSCC FORM 2233 APR 97 5962-E274-08 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88605 DEFENSE S

5、UPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and l

6、ead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following examples. For devices 01 and 02: 5962 - 88605 01 L X Federal stock class

7、designator RHA designator (see 1.2.1) Device type (see 1.2.2)Case outline (see 1.2.4)Lead finish (see 1.2.5) / / Drawing number For device 03: 5962 - 88605 01 Q L X Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead f

8、inish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels a

9、nd are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 29827A High performance 10-bit inverting buffer, three-state 02 29828A High perf

10、ormance 10-bit inverting buffer, three-state 03 29827A High performance 10-bit inverting buffer, three-state 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as listed below. Since the device class designator has been added after t

11、he original issuance of this drawing, for device types 01 and 02 device classes M and Q designators will not be included in the PIN and will not be marked on the device. Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN

12、class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88605 DEFENSE SUPPLY CENTER COL

13、UMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outlines. The case outlines are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style K GDFP2-F24 or CDFP3-F24 24 Flat pack L GDIP3-T24 or CDIP4-T24 24 Dual

14、-in-line 3 CQCC1-N28 28 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ Supply voltage range (VCC) . -0.5 V dc to +7.0 V dc DC input voltage r

15、ange (VIN) -1.5 V dc to 6.0 V dc DC output voltage range (VOUT) . -0.5 V dc to 5.5 V dc DC output current into output +100 mA DC output current out of output . -50 mA DC input current into input -30 mA to +5.0 mA Storage temperature range (TSTG) -65C to +150C Maximum power dissipation (PD) 2/ 1.82 W

16、 Lead temperature (soldering, 10 seconds) +300C Thermal resistance, junction-to-case (JC) See MIL-STD-1835 Junction temperature (TJ) . +150C 1.4 Recommended operating conditions. Supply voltage (VCC) . +4.5 V dc to +5.5 V dc Minimum high level input voltage (VIH) . 2.0 V dc Maximum low level input v

17、oltage (VIL) . 0.7 V dc Case temperature operating range (TC) -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, th

18、e issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface S

19、tandard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Docu

20、ment Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Must withstand the added PDdue to shor

21、t circuit test, e.g., IOS.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88605 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 2.2 Order of precedence.

22、 In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements.

23、 The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The

24、 individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-3853

25、5 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth tables. The truth t

26、ables shall be as specified on figure 2. 3.2.4 Logic diagrams. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4. 3.3 Electrical performance characteristics and postirradiation p

27、arameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be

28、the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible

29、due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accord

30、ance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of complia

31、nce. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed a

32、s an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and

33、 herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcir

34、cuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device cl

35、ass M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device c

36、lass M. Device class M devices covered by this drawing shall be in microcircuit group number 2 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88605 DEFENSE SUPPLY CENTER COLU

37、MBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Test conditions -55C TC +125C +4.5 V VCC +5.5 V Devicetypes Group A subgroups Limits Unit unless otherwise specified Min Max IOH= -15 mA 2.4 High level output vo

38、ltage VOH VCC= 4.5 V VIL= 0.8 V VIH= 2.0 V IOH= -24 mA All 1, 2, 3 2.0 V Low level output voltage VOL VCC= 4.5 V, VIH= 2.0 V, VIL= 0.8 V, IOL= 32 mA All 1, 2, 3 0.5 V Input clamp voltage VICVCC= 4.5 V IIN= -18 mA All 1, 2, 3 -1.2 V 01, 02 1, 2, 3 200 Input hysteresis VHYST03 1, 2, 3 150 mV Low level

39、 input current IILVCC= 5.5 V, VIN= 0.4 V All 1, 2, 3 -0.5 mA IIH1VCC= 5.5 V, VIN2.7 V All 1, 2, 3 50 High level input current IIH2VCC= 5.5 V, VIN5.5 V All 1, 2, 3 100 A IOZHVCC= 5.5 V, VOUT2.7 V 50 Offstate output current IOZLVCC= 5.5 V, VOUT= 0.4 V All 1, 2, 3 -50 A Short circuit output current IOS

40、 1/ VCC= 5.5 V, VOUT= 0.0 V All 1, 2, 3 -75 -250 mA Bus leakage current IOFFVCC= 0.0 V, VOUT= 2.9 V All 1, 2, 3 100 A Outputs logic low All 80.0 Outputs logic high All 55.0 Supply current ICCVCC= 5.5 V Outputs open VIL= 0.8 V VIH= 2.0 V Outputs logic three-state All 70.0 mA Functional tests VCC= 5.5

41、 V See 4.4.1c All 7, 8 L H See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88605 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234

42、 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Test conditions -55C TC +125C +4.5 V VCC +5.5 V Device types Group A subgroups Limits Unit unless otherwise specified Min Max 01, 03 9.0 tPLH 02 9, 10, 11 8.0 01, 03 9.0 Propagation delay time, from Di to Yi tPHL VCC= 5

43、.0 V CL= 50 pF 10% R1= 500 , R2= 500 See figure 4 02 9, 10, 11 10.0 ns 01, 02 12.0 tPZH 03 9, 10, 11 14.0 01, 02 13.0 Propagation delay time, output enable, from OEi to Yi or Yi tPZL VCC= 5.0 V CL= 50 pF 10% R1= 500 , R2= 500 See figure 4 03 9, 10, 11 15.0 ns tPHZ All 9, 10, 11 10.0 01, 02 10.0 Prop

44、agation delay time, output disable, from OEi to Yi or Yi tPLZ VCC= 5.0 V CL= 50 pF 10% R1= 500 , R2= 500 See figure 4 03 9, 10, 11 12.0 ns 1/ Not more than one output should be shorted at a time and the duration of the short circuit condition should not exceed 100 milliseconds. Provided by IHSNot fo

45、r ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88605 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 Device types 01, 03 02 01, 03 02 Case outlines K and L 3 Terminal numbe

46、r Terminal symbol 1 1OE 1OE NC NC 2 D0 D0 1OE 1OE 3 D1 D1 D0 D0 4 D2 D2 D1 D1 5 D3 D3 D2 D2 6 D4 D4 D3 D3 7 D5 D5 D4 D4 8 D6 D6 NC NC 9 D7 D7 D5 D5 10 D8 D8 D6 D6 11 D9 D9 D7 D7 12 GND GND D8 D8 13 2OE 2OE D9 D9 14 Y9 9Y GND GND 15 Y8 8Y NC NC 16 Y7 7Y 2OE 2OE 17 Y6 6Y Y9 9Y 18 Y5 5Y Y8 8Y 19 Y4 4Y

47、Y7 7Y 20 Y3 3Y Y6 6Y 21 Y2 2Y Y5 5Y 22 Y1 1Y NC NC 23 Y0 0Y Y4 4Y 24 VCCVCCY3 3Y 25 Y2 2Y 26 Y1 1Y 27 Y0 0Y 28 VCCVCCNC = no connection FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE

48、 A 5962-88605 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 8 DSCC FORM 2234 APR 97 Device types 01 and 03 Inputs Outputs 1OE 2OE Di Yi Function L L H H Data output L L L L Transparent X H X Z High impedance H X X Z High impedance Device type 02 Inputs Outputs 1OE 2OE Di Yi Function L L H L Data output L L L H Transparent X H X Z High impedance H X X Z High impedance H = High voltage level L = Low level voltage X = Irrelevant Z = High impedance Figure 2.

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