ImageVerifierCode 换一换
格式:PDF , 页数:9 ,大小:47.43KB ,
资源ID:699315      下载积分:10000 积分
快捷下载
登录下载
邮箱/手机:
温馨提示:
如需开发票,请勿充值!快捷下载时,用户名和密码都是您填写的邮箱或者手机号,方便查询和重复下载(系统自动生成)。
如填写123,账号就是123,密码也是123。
特别说明:
请自助下载,系统不会自动发送文件的哦; 如果您已付费,想二次下载,请登录后访问:我的下载记录
支付方式: 支付宝扫码支付 微信扫码支付   
注意:如需开发票,请勿充值!
验证码:   换一换

加入VIP,免费下载
 

温馨提示:由于个人手机设置不同,如果发现不能下载,请复制以下地址【http://www.mydoc123.com/d-699315.html】到电脑端继续下载(重复下载不扣费)。

已注册用户请登录:
账号:
密码:
验证码:   换一换
  忘记密码?
三方登录: 微信登录  

下载须知

1: 本站所有资源如无特殊说明,都需要本地电脑安装OFFICE2007和PDF阅读器。
2: 试题试卷类文档,如果标题没有明确说明有答案则都视为没有答案,请知晓。
3: 文件的所有权益归上传用户所有。
4. 未经权益所有人同意不得将文件中的内容挪作商业或盈利用途。
5. 本站仅提供交流平台,并不能对任何下载内容负责。
6. 下载文件中如有侵权或不适当内容,请与我们联系,我们立即纠正。
7. 本站不保证下载资源的准确性、安全性和完整性, 同时也不承担用户因使用这些下载资源对自己和他人造成任何形式的伤害或损失。

版权提示 | 免责声明

本文(DLA SMD-5962-88664 REV A-2002 MICROCIRCUIT LINEAR HIGH CURRENT NPN TRANSISTOR ARRAY MONOLITHIC SILICON《硅单片NPN晶体管阵列高电流线性微电路》.pdf)为本站会员(eastlab115)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-88664 REV A-2002 MICROCIRCUIT LINEAR HIGH CURRENT NPN TRANSISTOR ARRAY MONOLITHIC SILICON《硅单片NPN晶体管阵列高电流线性微电路》.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Make correction to the HFEtest as specified under table I. - ro 02-06-25 R. MONNIN THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHET REV SHET REV STATUS REV A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 PMIC N/A PREPARED BY C

2、HARLES E. BESORE DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY RAY MONNIN COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY MICHAEL A. FRYE MICROCIRCUIT, LINEAR, HIGH CURRENT, NPN TRANSISTOR ARRAY, MONOLITHIC SILICO

3、N AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 89-01-13 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-88664 SHEET 1 OF 8 DSCC FORM 2233 APR 97 5962-E454-02 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo repr

4、oduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88664 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing describes device requirements for MIL-STD-883 complia

5、nt, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A. 1.2 Part or Identifying Number (PIN). The complete PIN is as shown in the following example: 5962-88664 01 E X Drawing number Device type (see 1.2.1) Case outline (see 1.2.2) Lead finish (see 1.2.3) 1.2.1 Device ty

6、pe(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 SG3081 High current NPN transistor array 1.2.2 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Pac

7、kage style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line 1.2.3 Lead finish. The lead finish is as specified in MIL-PRF-38535, appendix A. 1.3 Absolute maximum ratings. 1/ Collector-to-emitter voltage (VCEO) 16 V dc Collector-to-base voltage (VCBO) . 20 V dc Collector-to-substrate voltage (VCSO) 20 V dc E

8、mitter-to-base voltage (VEBO) 5.0 V dc Collector current (IC) 100 mA Base emitter (IB) . 20 mA Power dissipation (PD): Any one transistor . 500 mW Total package . 750 mW 2/ Junction temperature (TJ) +150C Storage temperature range -65C to +150C Lead temperature (soldering, 10 seconds) +300C Thermal

9、resistance, junction-to-case (JC) See MIL-STD-1835 1.4 Recommended operating conditions. Ambient operating temperature range (TA) -55C to +125C _ 1/ Voltage and current ratings applies to each transistor in the array. 2/ Derate above TA= +25C at 6.67 mW/C. Provided by IHSNot for ResaleNo reproductio

10、n or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88664 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following

11、 specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in th

12、e solicitation. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. HANDBOOKS DEPARTM

13、ENT OF DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philade

14、lphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been o

15、btained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. Product built to this drawing that is produced by a Qualified Manufacturer Listing (QML) certified and qua

16、lified manufacturer or a manufacturer who has been granted transitional certification to MIL-PRF-38535 may be processed as QML product in accordance with the manufacturers approved program plan and qualifying activity approval in accordance with MIL-PRF-38535. This QML flow as documented in the Qual

17、ity Management (QM) plan may make modifications to the requirements herein. These modifications shall not affect form, fit, or function of the device. These modifications shall not affect the PIN as described herein. A “Q“ or “QML“ certification mark in accordance with MIL-PRF-38535 is required to i

18、dentify when the QML flow option is used. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535, appendix A and herein. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.2 herein. 3.2.2 Terminal

19、connections. The terminal connections shall be as specified on figure 1. 3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electr

20、ical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are described in table I. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE

21、 A 5962-88664 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Collector-to-bas

22、e breakdown voltage BVCBOIC= 500 A, IE= 0 mA 1,2,3 01 20 V Collector-to-emitter breakdown voltage BVCEOIC= 500 A, IB= 0 mA 1,2,3 01 16 V Collector-to-substrate breakdown voltage BVCSOIC= 500 A, IE= 0 mA, IB= 0 mA 1,2,3 01 20 V Emitter-to-base breakdown voltage BVEBOIC= 500 A 1,2,3 01 5.0 V DC forwar

23、d current transfer ratio HFEVCE= 5.0 V, IC= 30 mA, TA= +25C 1 01 50 VCE= 5.0 V, IC= 50 mA, TA= +25C 40 Base-to-emitter saturation voltage VBE(sat) IC= 30 mA, IB= 1.0 mA 1 01 1.0 V 2,3 1.2 Collector-to-emitter saturation voltage VCE(sat) IC= 30 mA, IB= 1.0 mA 1 01 0.5 V 2,3 0.9 IC= 50 mA, IB= 5.0 mA

24、1 0.7 2,3 1.1 Collector cutoff current ICEOVCE= 10 V, IB= 0 mA 1 01 10 A 2,3 70 VCB= 10 V, IE= 0 mA 1,2,3 6.0 1/ Parameters apply to each transistor in the array. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 59

25、62-88664 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 Device type 01 Case outline E Terminal number Terminal symbol 1 COLLECTOR 1 2 COLLECTOR 2 3 BASE 2 4 COLLECTOR 3 5 SUBSTRATE (see note 1 ) 6 BASE 3 7 COLLECTOR 4 8 BASE 4 9 COLLECTOR 5 10

26、 BASE 5 11 BASE 6 12 COLLECTOR 6 13 BASE 7 14 COLLECTOR 7 15 EMITTER (see note 2) 16 BASE 1 NOTES: 1. The substrate pin must be connected to the most negative dc potential, which should also be a good ac ground, for proper isolation between transistors. 2. The emitter is common to all seven transist

27、ors in the array. FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88664 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97

28、3.5 Marking. Marking shall be in accordance with MIL-PRF-38535, appendix A. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked as listed in MIL-HDBK-103 (see 6.6 herein). For packages where marking of the entire SMD PIN number is not fea

29、sible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. 3.5.1 Certification/compliance mark. A compliance indicator “C” shall be marked on all non-JAN devices built in compliance to MIL-PRF-38535, appendix A. The compliance indicator “C” shall be rep

30、laced with a “Q“ or “QML“ certification mark in accordance with MIL-PRF-38535 to identify when the QML flow option is used. 3.6 Certificate of compliance. A certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6

31、herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply shall affirm that the manufacturers product meets the requirements of MIL-PRF-38535, appendix A and the requirements herein. 3.7 Certificate of conformance. A certificate of conformance as re

32、quired in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change. Notification of change to DSCC-VA shall be required in accordance with MIL-PRF-38535, appendix A. 3.9 Verification and review. DSCC, DSCCs agent, and the acquir

33、ing activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 4. QUALITY ASSURANCE PROVISIONS 4.1 Sampling and inspection. Sampling and inspection procedures shall be in

34、 accordance with MIL-PRF-38535, appendix A. 4.2 Screening. Screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. The following additional criteria shall apply: a. Burn-in test, method 1015 of MIL-STD-883. (1)

35、Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicab

36、le, in accordance with the intent specified in test method 1015 of MIL-STD-883. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein, except interim electrical parameter tests prior to burn-in are optional at the discretion of the manufactu

37、rer. 4.3 Quality conformance inspection. Quality conformance inspection shall be in accordance with method 5005 of MIL-STD-883 including groups A, B, C, and D inspections. The following additional criteria shall apply. 4.3.1 Group A inspection. a. Tests shall be as specified in table II herein. b. S

38、ubgroups 4, 5, 6, 7, 8, 9, 10, and 11 in table I, method 5005 of MIL-STD-883 shall be omitted. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88664 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 RE

39、VISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 TABLE II. Electrical test requirements. MIL-STD-883 test requirements Subgroups (in accordance with MIL-STD-883, method 5005, table I) Interim electrical parameters (method 5004) 1 Final electrical test parameters (method 5004) 1*,2,3 Group A test require

40、ments (method 5005) 1,2,3 Groups C and D end-point electrical parameters (method 5005) 1 * PDA applies to subgroup 1. 4.3.2 Groups C and D inspections. a. End-point electrical parameters shall be as specified in table II herein. b. Steady-state life test conditions, method 1005 of MIL-STD-883. (1) T

41、est condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicabl

42、e, in accordance with the intent specified in test method 1005 of MIL-STD-883. (2) TA= +125C, minimum. (3) Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883. 5. PACKAGING 5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535,

43、 appendix A. 6. NOTES 6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. 6.2 Replaceability. Microcircuits covered by this drawing will replace the same generic de

44、vice covered by a contractor-prepared specification or drawing. 6.3 Configuration control of SMDs. All proposed changes to existing SMDs will be coordinated with the users of record for the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.

45、6.4 Record of users. Military and industrial users shall inform Defense Supply Center Columbus when a system application requires configuration control and the applicable SMD. DSCC will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings

46、. Users of drawings covering microelectronics devices (FSC 5962) should contact DSCC-VA, telephone (614) 692-0544. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88664 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS

47、, OHIO 43216-5000 REVISION LEVEL A SHEET 8 DSCC FORM 2234 APR 97 6.5 Comments. Comments on this drawing should be directed to DSCC-VA, Columbus, Ohio 43216-5000, or telephone (614) 692-0547. 6.6 Approved sources of supply. Approved sources of supply are listed in MIL-HDBK-103. The vendors listed in

48、MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been submitted to and accepted by DSCC-VA. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING BULLETIN DATE: 02-06-25 Approved sources of supply for SMD 5962-88664 are listed below for immediate acquisition information only and shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be revised to include the addition or deletion of sources. The vendors listed below have ag

copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
备案/许可证编号:苏ICP备17064731号-1