DLA SMD-5962-88725 REV C-2007 MICROCIRCUIT MEMORY DIGITAL CMOS 256K X 1 SRAM MONOLITHIC SILICON《硅单片256K X 1静态存取存储器数字存储微电路》.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add vendor CAGE number 75569 to the drawing. Add vendor CAGE number 6Y440 to device types 03LX, 03XX, 04LX, and 04XX. Removed Vendor CAGE number OBK02 from drawing as approved source of supply. Editorial changes throughout. 89-10-16 M. A. Frye B

2、Drawing updated to reflect current requirements. Editorial changes throughout. - gap 00-10-23 Raymond Monnin C Boilerplate update and part of five year review. tcr 07-02-23 Joseph Rodenbeck THE FRONT PAGE OF THIS DRAWING HAS BEEN REPLACED REV SHET REV SHET REV STATUS REV C C C C C C C C C C C C C C

3、OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY James E. Jamison DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Charles Reusing COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A.

4、Frye MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256K X 1 SRAM, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 88-10-22 AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-88725 SHEET 1 OF 14 DSCC FORM 2233 APR 97 5962-E271-07 Provided by IHSNot for ResaleNo reproducti

5、on or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88725 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing describes device requirements for MIL-STD-883 compliant, no

6、n-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A. 1.2 Part or Identifying Number (PIN). The complete PIN is as shown in the following example: 5962-88725 01 L X Drawing number Device type Case outline Lead finish (see 1.2.1) (see 1.2.2) (see 1.2.3) 1.2.1 Device type(s).

7、 The device type(s) identify the circuit function as follows: Device type Generic number Circuit function Access time 01 5C2561 256K x 1 CMOS SRAM 35 ns 02 5C2561 256K x 1 CMOS SRAM 45 ns 03 5C2561 256K x 1 CMOS SRAM 55 ns 04 5C2561 256K x 1 CMOS SRAM 70 ns 05 5C2561 256K x 1 CMOS SRAM 25 ns 1.2.2 C

8、ase outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style L GDIP3-T24 or CDIP4-T24 24 Dual-in-line package X CQCC3-N28 28 Rectangular leadless chip carrier Y CDFP4-F28 28 Flat pack 1.2.3 Lead finish. The lead f

9、inish is as specified in MIL-PRF-38535, appendix A. 1.3 Absolute maximum ratings. Voltage on any input relative to VSS . -0.5 V dc to +7.0 V dc Voltage applied to Q -0.5 V dc to +6.0 V dc Storage temperature range . -65C to +150C Maximum power dissipation (PD) . 1.0 W Lead temperature (soldering, 10

10、 seconds) +260C Thermal resistance, junction-to-case (JC) See MIL-STD-1835 Junction temperature (TJ) +150C 1/ 1.4 Recommended operating conditions. Supply voltage range (VCC) . 4.5 V dc to 5.5 V dc Supply voltage (VSS)0 V Input high voltage range (VIH) +2.2 V dc to +6.0 V dc Input low voltage range

11、(VIL) . -0.5 V dc to +0.8 V dc 2/ Case operating temperature range (TC) . -55C to +125C 1/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883. 2/ VILminimum = -3.0 V dc for pulse width less

12、 than 20 ns. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88725 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Governmen

13、t specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION

14、MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Micro

15、circuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3

16、Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.

17、1 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. Product built to this drawing that is produced by a Qualified Manufacturer Listing (QML) certified and qualified manufacturer or a ma

18、nufacturer who has been granted transitional certification to MIL-PRF-38535 may be processed as QML product in accordance with the manufacturers approved program plan and qualifying activity approval in accordance with MIL-PRF-38535. This QML flow as documented in the Quality Management (QM) plan ma

19、y make modifications to the requirements herein. These modifications shall not affect form, fit, or function of the device. These modifications shall not affect the PIN as described herein. A “Q“ or “QML“ certification mark in accordance with MIL-PRF-38535 is required to identify when the QML flow o

20、ption is used. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535, appendix A and herein. 3.2.1 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.2 Truth table. The truth tabl

21、e shall be as specified on figure 2. 3.2.3 Case outlines. The case outlines shall be in accordance with 1.2.2 herein. 3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in table I and shall apply over the full ca

22、se operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are described in table I. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from

23、IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88725 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 3.5 Marking. Marking shall be in accordance with MIL-PRF-38535, appendix A. The part shall be marked with the PIN listed in 1.2 herein. In a

24、ddition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. 3.6 Certificate of compliance. A certificate of compliance shall be required

25、from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply shall affirm that the manufacturers product meets the requirements of MIL-PRF-38535, appendi

26、x A and the requirements herein. 3.7 Certificate of conformance. A certificate of conformance as required in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change. Notification of change to DSCC-VA shall be required for any c

27、hange that affects this drawing. 3.9 Verification and review. DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 4. VERIFICAT

28、ION 4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. Screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. The following add

29、itional criteria shall apply: a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition C or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall

30、 specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein, except interim electrical parameter tes

31、ts prior to burn-in are optional at the discretion of the manufacturer. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88725 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5

32、DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TC+125C VCC= 4.5 V to 5.5 V VSS= 0 V Group A subgroups Device types Limits Unit unless otherwise specified Min Max 01-04 120 Operating supply current 1/ ICC1tAVAV= tAVAV(minimum), VCC = 5.5 V, CE = VIL

33、, All other inputs at VIL1, 2, 3 05 135 mA Standby power supply current TTL 1/ ICC2CE VIH, all other inputs VILor VIH, VCC= 5.5 V, f = 0 MHz 1, 2, 3 All 25 mA Standby power supply current CMOS 1/ ICC3CE (VCC-0.2 V), f = 0 MHz, VCC= 5.5 V, all other inputs (VCC-0.2 V) 1, 2, 3 All 20 mA Input leakage

34、current, any input IILKVCC= 5.5 V, VIN= 0 V to 5.5 V 1, 2, 3 All 10 A Off-state output leakage current IOLKVCC= 5.5 V, VIN= 0 V to 5.5 V 1, 2, 3 All 10 A Output high voltage VOHIOUT= -4.0 mA, VCC= 4.5 V, VIL= 0.8 V, VIH= 2.2 V 1, 2, 3 All 2.4 V Output low voltage VOLIOUT= 8.0 mA, VCC= 4.5 V, VIL= 0.

35、8 V, VIH= 2.2 V 1, 2, 3 All 0.4 V Input capacitance CINVIN= 0 V, f = 1.0 MHz, TC= 25C, See 4.3.1c 4 All 10.0 pF Output capacitance COUTVOUT= 0 V, f = 1.0 MHz, TC= 25C, See 4.3.1c 4 All 12.0 pF Chip enable access tELQVSee figure 3 2/ 9, 10, 11 01 35 ns time 02 45 03 55 04 70 05 25 See footnotes at en

36、d of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88725 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance charac

37、teristics Continued. Test Symbol Conditions -55C TC+125C VCC= 4.5 V to 5.5 V VSS= 0 V Group A subgroups Device types Limits Unit unless otherwise specified Min Max Read cycle time tAVAVSee figure 3 2/, 3/ 9, 10, 11 01 35 ns 02 45 03 55 04 70 05 25 Address access time tAVQVSee figure 3 2/, 4/ 9, 10,

38、11 01 35 ns 02 45 03 55 04 70 05 25 Output hold after address change tAVQXSee figure 3 2/, 9, 10, 11 All 3.0 ns Chip enable to output active tELQXSee figure 3 2/, 5/, 6/ 9, 10, 11 All 3.0 ns Chip disable to output inactive tEHQZSee figure 3 2/, 5/, 6/ 9, 10, 11 01, 02, 05 0 20 ns 03 0 25 04 30 Chip

39、enable to power up tELPUSee figure 3 2/, 5/ 9, 10, 11 All 0 ns Chip enable to power tEHPDSee figure 3 2/, 5/ 9, 10, 11 01 35 ns down 02 45 03 55 04 70 05 25 Write cycle time tAVAVSee figure 4 2/ 9, 10, 11 01 35 ns 02 45 03 55 04 70 05 25 Write pulse width tWLWHSee figure 4 2/ 9, 10, 11 01 30 ns 02 4

40、0 03 50 04 55 05 20 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88725 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97

41、 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions -55C TC+125C VCC= 4.5 V to 5.5 V VSS= 0 V Group A subgroups Device types Limits Unit unless otherwise specified Min Max Chip enable to end of tELEHSee figure 4 2/ 9, 10, 11 01 30 ns write 02 40 03 50 04 55 05 20 Data

42、setup to end of tDVWHSee figure 4 2/ 9, 10, 11 01, 02 20 ns write 03, 04 25 05 16 Data hold after end of write tWHDXSee figure 4 2/ 9, 10, 11 All 2.0 ns Address setup to end of tAVWHSee figure 4 2/ 9, 10, 11 01 30 ns write 02 40 03 50 04 55 05 20 Address setup to beginning of write tAVWLSee figure 4

43、 2/ (write cycle number 1) 9, 10, 11 All 0 ns tAVELSee figure 4 2/ (write cycle number 2) 9, 10, 11 All 2.0 ns Address hold after end of write tWHAVSee figure 4 2/ 9, 10, 11 All 5.0 ns Write enable to output tWLQZSee figure 4 2/, 5/, 6/ 9, 10, 11 01, 05 0 15 ns disable 02 0 20 03 25 04 0 30 Output a

44、ctive after end of write tWHQXSee figure 4 2/, 5/, 6/, 7/ 9, 10, 11 All 0 ns 1/ ICCis dependent upon output loading and cycle rate. The specified values apply with output(s) unloaded. 2/ AC measurements assume signal transition times of 5 ns or less, timing reference levels of 1.5 V, input pulse lev

45、els of 0 V to 3.0 V and output loading of 30 pF load capacitance. Output timing reference is 1.5 V. See figure 5. 3/ For read cycles 1 and 2, WE is high for entire cycle. 4/ Device is continuously selected, CE low. 5/ Parameter, if not tested, shall be guaranteed to the limits specified in table I.

46、6/ Measured 500 mV from steady-state output voltage. Load capacitance is 5.0 pF. 7/ If WE is low when CE goes low, the output remains in the high impedance state. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 59

47、62-88725 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 8 DSCC FORM 2234 APR 97 Device types 01 through 05 Case outlines L X Y Terminal number Terminal symbol 1 A A A 2 A A A 3 A A A 4 A NC A 5 A A A 6 A A A 7 A A NC 8 A A NC 9 A A A 10 Q A A 11 WE Q A 12 VSSNC Q 13

48、CE WE WE 14 D VSSVSS15 A CE CE 16 A D D 17 A A A 18 A NC A 19 A A A 20 A A A 21 A A NC 22 A A NC 23 A A A 24 VCCA A 25 - A A 26 - NC A 27 - A A 28 - VCCVCCFIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88725 DEFENSE SUPPLY