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本文(DLA SMD-5962-88756 REV D-2011 MICROCIRCUITS DIGITAL ADVANCED CMOS 8-INPUT MULTIPLEXER TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf)为本站会员(王申宇)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-88756 REV D-2011 MICROCIRCUITS DIGITAL ADVANCED CMOS 8-INPUT MULTIPLEXER TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Change to one part one part number format. Add characterization for device classes B, S, Q, and V. Add ground bounce and latch-up immunity characterization. Add appendix for substitution data. Changes to table I. Editorial changes throughout. jak

2、 92-12-22 Monica L. Poelking B Add radiation hardness assurance limits. Editorial changes throughout. - jak 98-05-06 Monica L. Poelking C Add vendor CAGE F8859. Add device type device type 02. Add case outline X. Add radiation features in section 1.5. Update boilerplate to MIL-PRF-38535 requirements

3、. Editorial changes throughout. LTG 04-12-01 Thomas M. Hess D Update boilerplate paragraphs to the current MIL-PRF-38535 requirements. - LTG 11-03-22 David J. Corbett REV SHET REV D D D D D D D SHEET 15 16 17 18 19 20 21 REV STATUS REV D D D D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10

4、 11 12 13 14 PMIC N/A PREPARED BY Marcia B. Kelleher DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A CHECKED BY Ray Monnin APPROVED BY Michael

5、A. Frye MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 8-INPUT MULTIPLEXER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON DRAWING APPROVAL DATE 89-02-07 REVISION LEVEL D SIZE A CAGE CODE 67268 5962-88756 SHEET 1 OF 21 DSCC FORM 2233 APR 97 5962-E137-11 Provided by IHSNot for ResaleNo reproduction or networking p

6、ermitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88756 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device cl

7、asses M, B, and Q) and space application (device classes S and V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is a

8、s shown in the following example: 5962 F 88756 01 V X A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes B, S, Q, and V RHA marke

9、d devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device

10、type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54ACT151 8-input multiplexer, TTL compatible inputs 02 54ACT151 8-input multiplexer, TTL compatible inputs 1.2.3 Device class designator. The device class designator is a single lette

11、r identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A B, S, Q, or V Certification and qualificati

12、on to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line F GDFP2-F16 or CDFP3-F16 16 Flat pack X CDFP4-F16 16 Flat pack 2 CQCC1-N20 20 Square

13、 leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes B, S, Q, and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWIN

14、G SIZE A 5962-88756 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +6.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC + 0.5 V dc DC output voltage range (VOUT) . -0.5 V

15、 dc to VCC+ 0.5 V dc DC input diode current (IIK) (VIN= -0.5 V, VIN= VCC+ 0.5 V) 20 mA DC output diode current (IOK) (VOUT= -0.5 V, VOUT= VCC+ 0.5 V) . 20 mA DC output current (IOUT) . 50 mA DC VCCor GND current (ICC, IGND) . 100 mA Storage temperature range (TSTG) . -65C to +150C Maximum power diss

16、ipation (PD) . 500 mW Lead temperature (soldering, 10 seconds): Case outline X +260C Other case outlines except case X . +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) +175C 4/ Case operating temperature range (TC) . -55C to +125C 1.4 Recommended operati

17、ng conditions. 2/ 3/ Supply voltage range (VCC) +4.5 V dc to +5.5 V dc Input voltage range (VIN) +0.0 V dc to VCCOutput voltage range (VOUT) . +0.0 V dc to VCCMaximum low level input voltage (VIL) 0.8 V dc Minimum high level input voltage (VIH) . 2.0 V dc Case operating temperature range (TC) . -55C

18、 to +125C Input edge rate (V/t) minimum: (from VIN= 0.8 V to 2.0 V, 2.0 V to 0.8 V) 125 mV/ns Maximum high level output current (IOH) -24 mA Maximum low level output current (IOL) 24 mA 1.5 Radiation features. Device type 01: Maximum total dose available (dose rate = 50 300 rads (Si)/s) . 100 krads

19、(Si) Single Event Latch-up (SEL) occur at effective LET (See 4.4.5.2) . 100 MeVcm2/mg Device type 02: Maximum total dose available (dose rate = 50 300 rads (Si)/s) . 300 krads (Si) Single Event Latch-up (SEL) occur at effective LET (See 4.4.5.2) . 93 MeVcm2/mg 5/ 1/ Stresses above the absolute maxim

20、um rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the full specified VCCran

21、ge and case temperature range of -55C to +125C. 4/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883. 5/ Limits obtained during Technology characterization/Qualification, guaranteed by des

22、ign or process, but not production tested unless specified by the customer through the purchase order or contract. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88756 DLA LAND AND MARITIME COLUMBUS, OHIO 43

23、218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these do

24、cuments are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Co

25、mponent Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700

26、 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents cited in the solicitation or contract. JEDEC SOLID STATE TECHN

27、OLOGY ASSOCIATION (JEDEC) JEDEC Standard No. 20 - Standard for Description of 54/74ACXXXXX and 54/74ACTXXXXX Advanced High-Speed CMOS Devices. JEDEC Standard No. 78 - IC Latch-Up Test. (Copies of these documents are available online at http:/www.jedec.org or from JEDEC Solid State Technology Associa

28、tion, 3103 North 10thStreet, Suite 240-S Arlington, VA 22201). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulation

29、s unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes B, S, Q, and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The mo

30、dification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimen

31、sions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes B, S, Q, and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal con

32、nections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. Provided by IHSNot for ResaleNo reproduction or networking permitted without license f

33、rom IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88756 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4. 3.2.6 Radiation exposure

34、circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise spe

35、cified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA

36、. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manu

37、facturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes B, S, Q, and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, ap

38、pendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes B, S, Q, and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device clas

39、ses B, S, Q, and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved

40、 source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes B, S, Q, and V, the requirements of MIL-PR

41、F-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes B, S, Q, and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with ea

42、ch lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Ve

43、rification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritimes agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the op

44、tion of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 39 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STAN

45、DARD MICROCIRCUIT DRAWING SIZE A 5962-88756 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test and MIL-STD-883 test method 1/ Symbol Test conditions 2/ 3/ -55C TC +125C 4.5 V VCC 5.5 V unless otherwise

46、 specified Device type and device class VCCGroup A subgroups Limits 4/ Unit Min Max High level output voltage 3006 VOH15/ For all inputs affecting output under test, VIN= VIHor VILVIH= 2.0 V, VIL= 0.8 V For all other inputs VIN= VCCor GND IOH= -50A All All 4.5 V 1, 2, 3 4.4 V VOH2For all inputs affe

47、cting output under test, VIN= VIHor VILVIH= 2.0 V, VIL= 0.8 V For all other inputs All All 5.5 V 1, 2, 3 5.4 VIN= VCCor GND IOH= -50A M, D, P, L, R 01 B, S, Q, V 1 5.4 VOH3For all inputs affecting output under test, VIN= VIHor VILVIH= 2.0 V, VIL= 0.8 V For all other inputs All All 4.5 V 1, 2, 3 3.7

48、VIN= VCCor GND IOH= -24mA M, D, P, L, R 01 B, S, Q, V 1 3.7 VOH4 5/ For all inputs affecting output under test, VIN= VIHor VILVIH= 2.0 V, VIL= 0.8 V For all other inputs VIN= VCCor GND IOH= -24 mA All All 5.5 V 1, 2, 3 4.7 VOH56/ For all inputs affecting output under test, VIN= VIHor VILVIH= 2.0 V, VIL= 0.8 V For all other inputs All All 5.5 V 1, 2, 3 3.85 VIN= VCCor GND IOH= -50mA M, D, P, L, R 01 B, S, Q, V 1 3.85 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-887

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