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本文(DLA SMD-5962-89511 REV E-2008 MICROCIRCUIT LINEAR REGULATING PULSE WIDTH MODULATOR MONOLITHIC SILICON.pdf)为本站会员(confusegate185)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-89511 REV E-2008 MICROCIRCUIT LINEAR REGULATING PULSE WIDTH MODULATOR MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add case outlines F and 2. Add output noise voltage test to table I, reference section. Change minimum limit for VTH(SYNC)test in table I, oscillator section. Editorial changes throughout. 94-02-28 M. A. FRYE B Add device class V device and make

2、change to TABLE II. - ro 00-11-30 R. MONNIN C Add device type 05. Make changes to 1.2.2, 1.3, 1.4, table I, figure 1, and figure 2. - ro 01-03-21 R. MONNIN D Drawing updated to reflect current requirements. rrp 06-03-31 R. MONNIN E Add device type 06 and Table IIB. Make changes to 1.2.2, 1.4, Table

3、I, figure 1, and figure 2. - ro 08-12-03 R. HEBER THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHET REV E SHET 15 REV STATUS REV E E E E E E E E E E E E E E OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY JOSEPH A. KERBY CHECKED BY D. H. JOHNSON DEFENSE SUPPL

4、Y CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil APPROVED BY MICHAEL A. FRYE STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 89-04-27 MICROCIRCUIT, LINEAR, REGULATING, PULSE WIDTH MOD

5、ULATOR, MONOLITHIC SILICON AMSC N/A REVISION LEVEL E SIZE A CAGE CODE 67268 5962-89511 SHEET 1 OF 15 DSCC FORM 2233 APR 97 5962-E069-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89511 DEFENSE SUPPLY CEN

6、TER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finis

7、hes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following examples. For device classes M and Q: 5962 - 89511 01 E A Federal stock class desi

8、gnator RHA designator (see 1.2.1) Device type (see 1.2.2)Case outline (see 1.2.4)Lead finish (see 1.2.5) / / Drawing number For device class V: 5962 - 89511 03 V 2 A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead

9、finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels

10、and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 1525A Regulating pulse width modulator 02 1527A Regulating pulse width modulato

11、r 03 UC1525A Regulating pulse width modulator 04 UC1527A Regulating pulse width modulator 05 UC1525B Regulating pulse width modulator 06 UC1525B-SP Regulating pulse width modulator 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level a

12、s listed below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q designators will not be included in the PIN and will not be marked on the device. Device class Device requirements documentation M Vendor self-certification to the req

13、uirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWIN

14、G SIZE A 5962-89511 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-

15、T16 16 Dual-in-line F GDFP2-F16 or CDFP3-F16 16 Flat pack 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ Input voltage (+VIN)

16、. +40 V dc Collector voltage (VC) +40 V dc Logic inputs range . -0.3 V dc to +5.5 V dc Analog inputs range . -0.3 V dc to +VINOutput current, source or sink . 500 mA Reference output current . 50 mA Oscillator charging current . 5 mA Maximum power dissipation (PD) 1,000 mW Lead temperature (solderin

17、g, 10 seconds) +300C Junction temperature (TJ) +150C Storage temperature range -65C to +150C Thermal resistance, junction-to-case (JC) See MIL-STD-1835 Thermal resistance, junction-to-ambient (JA): Cases E and F 100C/W Case 2. 70C/W 1.4 Recommended operating conditions. Input voltage (+VIN) . +8 V d

18、c to +35 V dc Collector voltage (VC) +4.5 V dc to +35 V dc Sink/source load current (steady-state) . 0 mA to 100 mA Sink/source load current (peak) . 0 mA to 400 mA Reference load current range 0 mA to 20 mA Oscillator frequency range: Device types 01 - 04 100 Hz to 350 kHz Device types 05 and 06 10

19、0 Hz to 400 kHz Oscillator timing resistor (RT): Device types 01 04 2 k to 200 k Device types 05 and 06 2 k to 150 k Oscillator timing capacitor range (CT): Device types 01 04 470 pF to 0.1 F Device types 05 and 06 0.001 pF to 0.1 F Dead time resistor range (device types 05 and 06 only) 0 to 500 Amb

20、ient operating temperature range (TA) . -55C to +125C _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. Provided by IHSNot for ResaleNo reproduction or networking permitte

21、d without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89511 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standard

22、s, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. D

23、EPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of thes

24、e documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited her

25、ein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with

26、MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-3853

27、5, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for devic

28、e class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Logic diagrams. The logic diagrams shall be as specified on figure 2. 3.3 Electrical performance characteristics a

29、nd postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test

30、 requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN

31、 is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M s

32、hall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. Provided

33、by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89511 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbo

34、l Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits 2/ Unit Min Max Reference section Reference voltage out VREF1 01-04 5.05 5.15 V 2,3 5.0 5.2 1 05, 06 5.062 5.138 Line regulation VRLINEVIN= 8 V to 35 V 1,2,3 01-04 -30 30 mV 05, 06 -10 10 Load regulation VL

35、OADIL= 0 mA to 20 mA 1,2,3 01-04 -50 50 mV 05, 06 -15 15 Short-circuit current IOSVREF= 0 V, t 25 ms, 1 01-04 -100 mA TA= +25C 05, 06 100 Temperature stability VTS3/ 2,3 05, 06 50 mV Total output variation VTOVLine, load, and temperature 1,2,3 05, 06 5.036 5.164 V Long term stability VLTS1000 hours,

36、 3/ TA= +125C 2 05 10 mV Output noise voltage NO10 Hz f 10 kHz, 3/ TA= +25C 7 All 200 Vrms Oscillator section Initial accuracy FOSCTA= +25C 4 All 37.5 42.5 kHz Oscillator accuracy over temperature FOSC(OT) TA= -55C and +125C 5,6 All 35.2 44.8 kHz Voltage stability VSTABVIN= 8 V to 35 V 4,5,6 All 1 %

37、 Clock pulse amplitude VOSC3/ 4,5,6 All 3 V Clock pulse width tPWTA= +25C 3/ 9 All 0.3 1.0 s Max oscillator frequency FMAXRT= 2 k, CT= .001 F 4,5,6 01,02 300 kHz RT= 2 k, CT= 470 F 03,04 350 05, 06 400 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitte

38、d without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89511 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C TA +125C unless otherwise s

39、pecified Group A subgroups Device type Limits 2/ Unit Min Max Oscillator section continued. Min oscillator frequency FMINRT= 150 k, CT= 0.1 F 4,5,6 01, 02 150 Hz RT= 200 k, CT= 0.1 F 03, 04, 05, 06 120 Threshold SYNC voltage VTH(SYNC) 1,2,3 All 1.2 2.8 V SYNC input current II(SYNC) SYNC voltage = 3.

40、5 V 1,2,3 All 2.5 mA Pulse width modulator comparator section Min duty cycle tON(min) / VCOMP= 0.6 V 9,10,11 01-04 .001 % tOSC05, 06 0 Max duty cycle tON(max) / tOSCVCOMP= 3.6 V 9,10,11 All 45 % Input threshold 4/ VTHZero duty cycle 1,2,3 06 0.7 V Maximum duty cycle 3.6 Error amplitude section, VCM=

41、 5.1 V (unless otherwise specified) Input offset voltage VIORS 2 k 1,2,3 All -5 5 mV Input bias current IIB1,2,3 All 10 A Input offset current IIO1,2,3 All -1 1 A DC open loop gain AVOLTA= +25C, VCM= 5.1 V, RL 10 M 4 All 60 dB Output low level VOL1,2,3 All 0.5 V Output high level VOH1,2,3 All 3.8 Co

42、mmon mode rejection ratio CMRR VCM= 1.5 V to 5.2 V 1,2,3 All 60 dB Power supply rejection ratio PSRR VIN= 8 V to 35 V 4,5,6 All 50 dB Unity gain bandwidth GBW AV= 0 dB, TA= +25C 3/ 7 All 1 MHz See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without

43、 license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89511 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified

44、Group A subgroups Device type Limits 2/ Unit Min Max Soft start section Soft start current ISSVSD= 0 V, VSS= 0 V 1,2,3 All 25 80 A Soft start voltage VSSVSD= 2.5 V 1,2,3 All 0.7 V Shutdown input current ISDVSD= 2.5 V 1,2,3 All 1.0 mA Shutdown threshold voltage VTHTo outputs, VSS= 5.1 V, TA= +25C 4 0

45、3, 04, 05, 06 0.6 V Output section (each output), VC= +20 V (unless otherwise specified) Output low level VOLISINK= 20 mA 1,2,3 All 0.4 V ISINK= 100 mA 2.2 Output high level VOHISOURCE= -20 mA 1,2,3 All 18 V ISOURCE= -100 mA 17 Under voltage lockout VULVCOMPand VSS= high 1,2,3 All 6 8 V Shutdown del

46、ay tSDVSD= 3 V, TA= +25C 3/ 9 01,02 500 ns VSD= 2.5 V, TA= +25C 3/ 03, 04, 05, 06 500 Rise time trCL= 1 nF, TA= +25C 3/ 9 All 600 ns Collector fall time tf CL= 1 nF, TA= +25C 3/ 9 All 300 ns Collector leakage voltage VCLVC= 35 V 1,2,3 05, 06 200 A VCoff current IVC(off) VC= 35 V 1,2,3 01,03 200 A To

47、tal standby current section Supply current ISVIN= 35 V 1,2,3 All 20 mA 1/ Unless otherwise specified, +VIN= 20 V, RT= 3.6 k, CT= 0.01 F, and RD= 0 . 2/ The algebraic convention, whereby the most negative value is a minimum and the most positive is a maximum, is used in this table. Negative current s

48、hall be defined as conventional current flow out of a device terminal. 3/ If not tested, shall be guaranteed to the limits specified in table I herein. 4/ Tested at FOSC= 40 kHz, RT= 3.6 k, CT= 0.01 F, and RD= 0 . Approximate oscillator frequency is defined by: f = 1 / ( CT( 0.7 x RTx 3RD). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89511 DEFENSE SUPPLY

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