DLA SMD-5962-89542 REV E-2012 MICROCIRCUIT LINEAR JFET-INPUT OPERATIONAL AMPLIFIER MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add device type 03. Add case outline H. Add radiation hardness requirements.Update boilerplate to reflect new requirements. - rrp 00-07-12 R. MONNIN B Make change to TCVOS, IOS, IIB, CMRR, VO, PSRR, SR, GBW, PDtests as specified under table I. Ma

2、ke change to figure 1. Add subgroup 7 to table IIA. - ro 00-10-23 R. MONNIN C Make changes to VOand PDtests as specified in table I. Add footnote 2/ to Group C end point electrical parameters under the device class “V” column. Delete figure 2, the radiation exposure circuit. - ro. 03-02-18 R. MONNIN

3、 D Drawing updated to reflect current requirements. -rrp 05-03-09 R. MONNIN E Update drawing as part of 5 year review. - jt. 12-10-09 C. SAFFLE THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHEET REV SHEET REV STATUS REV E E E E E E E E E E E OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11

4、 PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY CHARLES REUSING APPROVED BY MICHAEL A. FRYE MIC

5、ROCIRCUIT, LINEAR, JFET-INPUT, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON DRAWING APPROVAL DATE 89-10-31 AMSC N/A REVISION LEVEL E SIZE A CAGE CODE 67268 5962-89542 SHEET 1 OF 11 DSCC FORM 2233 APR 97 5962-E482-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license fr

6、om IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89542 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space ap

7、plication (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following examples. For

8、device classes M and Q: 5962 - 89542 01 G X Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Case outline (see 1.2.4) Lead finish (see 1.2.5) / / Drawing number For device class V: 5962 R 89542 03 V G X Federal stock class designator RHA designator (see 1.2.1) Device

9、 type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA

10、 marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device types. The device types identify the circuit function as follows: Device type Generic number Circuit function 01 OP-15A JFET

11、-Input, operational amplifier 02 OP-15B JFET-Input, operational amplifier 03 OP-15A Radiation hardened, JFET-Input, operational amplifier 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as listed below. Since the device class desi

12、gnator has been added after the original issuance of this drawing, device classes M and Q designators will not be included in the PIN and will not be marked on the device. Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JA

13、N class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89542 DLA LAND AND MARITIME C

14、OLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outlines. The case outlines are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style G MACY1-X8 8 Can H GDFP1-F10 or CDFP2-F10 10 Flat pack P GDIP1-T8 or CDIP2-T8

15、 8 Dual-in-line 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ Positive supply voltage (+VS) . +22 V dc Negative supply voltage (-VS) . -22 V dc Storage temperature range

16、 . -65C to +150C Maximum power dissipation (PD) . 500 mW 2/ Differential input voltage . 40 V Input voltage . 20 V Output short circuit duration Indefinite Lead temperature (soldering, 60 seconds) . +300C Junction temperature (TJ) . +150C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835

17、Thermal resistance, junction-to-ambient (JA) 2/ Case G . 150C/W Case P . 119C/W Case H . 180C/W 1.4 Recommended operating conditions. Supply voltage (VS) 15 V Ambient operating temperature (TA) . -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 50 300 rads(Si)/s) . 100

18、 krads(Si) 3/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitatio

19、n or contract. 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Derate linearly 6.7 mW/C above TA= +75C for P package; derate linearly 7.1 mW/C above TA= +80C for G pack

20、age; derate linearly 5.6 mW/C above TA= +70C for H package. 3/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, met

21、hod 1019, condition A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89542 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 4 DSCC FORM 2234 APR 97 DEPARTMENT OF DEFENSE SPECIFICATION

22、MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Micro

23、circuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event

24、 of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individu

25、al item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual i

26、tem requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein

27、for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Radiation exposure circuit. The radiat

28、ion exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the

29、 electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical

30、 tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the

31、option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certific

32、ation/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. Provided by IHSNot for ResaleNo reproduction or networking permitted without

33、license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89542 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ 3/ -55C TA +125C unless otherwise specified Group A subgro

34、ups Device Type Limits Unit Min Max Input offset voltage VOSVCM= 0 V 1 01, 03 0.5 mV 2, 3 0.9 M,D,P,L,R 1 03 1.0 1 02 1.0 2, 3 2.0 Input offset voltage temperature coefficient TCVOS-55C and +125C 4/ 2, 3 03 10 V/C Input offset current IOSVS= 20 V, VCM= 0 V 5/ 1, 3 01, 03 10 pA 2 4 nA M,D,P,L,R 1 03

35、0.3 nA 1, 3 02 20 pA 2 6 nA Input bias current IIBVS= 20 V, VCM= 0 V 5/ 1, 3 01, 03 50 pA 2 5.0 nA M,D,P,L,R 1 03 3.0 nA 1, 3 02 100 pA 2 7.5 nA Common mode rejection 4/ CMRR VCM= IVR = 10.5 V 1 All 86 dB ratio VCM= IVR = 10.4 V 2, 3 85 Output voltage swing 4/ VORL= 2 k 4 All 11.0 V RL= 10 k 5, 6 12

36、.0 Large-signal voltage gain AVOVO= 10 V, RL= 2 k 4 01, 03 100 V/mV 5, 6 35 M,D,P,L,R 4 03 50 4 02 75 5, 6 30 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89542 DLA LAND AND

37、MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ 2/ 3/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Supply current ICCVO= 0 V 1 All 4.0

38、mA 2,3 11.0 M,D,P,L,R 1 03 4.0 Power supply rejection 4/ PSRR VS= 10 V to 18 V 1 All 86 dB ratio 2,3 85 Slew rate 4/ SR AVCL= +1V, RL 2 k, CL= 100 pF 7 01, 03 10 V/s 8a 7 7 02 7.5 8a 4.5 Gain bandwidth product 4/ GBW fO= 100 kHz, TA= +25C 7 01, 03 3.5 MHz fO= 87.5 kHz, TA= +25C 02 2.5 Power dissipat

39、ion 4/ PDVO= 0 V, TA= +25C 1 All 120 mW Settling time tS6/ 9, 10 All 4 s 1/ Devices supplied to this drawing will meet all levels M, D, P, L, R of irradiation. However, this device is only tested at the R level. Pre and Post irradiation values are identical unless otherwise specified in table I. Whe

40、n performing post irradiation electrical measurements for any RHA level, TA= +25C, and VS= 15 V. 2/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the condit

41、ions as specified in MIL-STD-883, method 1019, condition A. 3/ VS= 15 V, RS= 50 , unless otherwise specified. 4/ This parameter is not tested post-irradiation. 5/ Subgroup 3 is guaranteed if not tested. 6/ Subgroup 10 is guaranteed if not tested. Provided by IHSNot for ResaleNo reproduction or netwo

42、rking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89542 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 7 DSCC FORM 2234 APR 97 Device types 01, 02, and 03 03 Case outlines G and P H Terminal number Terminal symbol 1 BAL NC 2 -IN BAL 3 +IN

43、-IN 4 -VS+IN 5 BAL -VS6 OUT BAL 7 +VSVOUT 8 NC +VS9 - NC 10 - NC NC = No connection FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89542 DLA LAND AND MARITIME COLUMBUS, OHIO 4

44、3218-3990 REVISION LEVEL E SHEET 8 DSCC FORM 2234 APR 97 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a cert

45、ificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm tha

46、t the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-

47、38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime-VA of change of product (see 6.2 herein) involving devices acq

48、uired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritime s agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Micro