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本文(DLA SMD-5962-89567 REV B-2007 MICROCIRCUIT MEMORY DIGITAL CMOS 2K X 9 FIFO MONOLITHIC SILICON《硅单片 2K X 9先进先出型氧化物半导体 数字记忆微型电路》.pdf)为本站会员(proposalcash356)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-89567 REV B-2007 MICROCIRCUIT MEMORY DIGITAL CMOS 2K X 9 FIFO MONOLITHIC SILICON《硅单片 2K X 9先进先出型氧化物半导体 数字记忆微型电路》.pdf

1、 REVISIONS LTR DESCRIPTION DATE APPROVED A Updated boilerplate to reflect current requirements and made corrections to table I and waveforms. Separated source bulletin from the body of the drawing. - glg 01-01-30 Raymond Monnin B Boilerplate update and part of five year review. tcr 07-04-11 Robert M

2、. Heber THE ORIGINAL FIRST PAGE OF THIS DRAWING HAS BEEN REPLACED. REV SHEET REV B B B B B B SHEET 15 16 17 18 19 20 REV STATUS REV B B B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Kenneth Rice DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAW

3、ING CHECKED BY Charles Reusing COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY All DEPARTMENTS APPROVED BY Monica L. Poelking MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 9 FIFO, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 27

4、March 1990 AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-89567 SHEET 1 OF 20 DSCC FORM 2233 APR 97 5962-E260-07 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89567 DEFENSE SUPPLY CENTER COLUMBUS COL

5、UMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A. 1.2 Part or Identifying Number (PIN). The complete PIN sha

6、ll be as shown in the following example: 5962-89567 01 X A | | | | | | | | | | | | Drawing number Device type Case outline Lead finish (see 1.2.1) (see 1.2.2) (see 1.2.3) 1.2.1 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit Access time

7、 01 7203 2K X 9-bit parallel FIFO 120 ns 02 7203 2K X 9-bit parallel FIFO 80 ns 03 7203 2K X 9-bit parallel FIFO 65 ns 04 7203 2K X 9-bit parallel FIFO 50 ns 05 7203 2K X 9-bit parallel FIFO 40 ns 1.2.2 Case outline(s). The case outline(s) are as designated in MIL-STD-1835, and as follows: Outline l

8、etter Descriptive designator Terminals Package style X GDIP1-T28 or CDIP2-T28 28 dual-in-line package Y GDFP2-F28 28 flat package Z CQCC1-N32 32 rectangular chip carrier 1.2.3 Lead finish. The lead finish is as specified in MIL-PRF-38535, appendix A. 1.3 Absolute maximum ratings. Terminal voltage wi

9、th respect to ground. -0.5 V dc to +7.0 V dc DC output current . 50 mA Storage temperature range. -65C to +150C Maximum power dissipation (PD):. 1.0 W Lead temperature (soldering, 10 seconds) . +260C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) . +150C 1/ 1.

10、4 Recommended operating conditions. Supply voltage range (VCC). +4.5 V dc to +5.5 V dc Minimum high level input voltage (VIH) . 2.2 V dc Maximum low level input voltage (VIL) . +0.8 V dc 2/ Case operating temperature range (TC) -55C to +125C 1/ Maximum junction temperature may be increased to +175C

11、during burn-in and steady state life. 2/ 1.5 V undershoots are allowed for 10 ns once per cycle. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89567 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990

12、REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents a

13、re those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component

14、Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Docu

15、ment Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable la

16、ws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements The individual item requirements shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. Product built to this drawing that is produced by

17、a Qualified Manufacturer Listing (QML) certified and qualified manufacturer or a manufacturer who has been granted transitional certification to MIL-PRF-38535 may be processed as QML product in accordance with the manufacturers approved program plan and qualifying activity approval in accordance wit

18、h MIL-PRF-38535. This QML flow as documented in the Quality Management (QM) plan may make modifications to the requirements herein. These modifications shall not affect form, fit, or function of the device. These modifications shall not affect the PIN as described herein. A “Q“ or “QML“ certificatio

19、n mark in accordance with MIL-PRF-38535 is required to identify when the QML flow option is used. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535, appendix A and herein. 3.2.1 Case outlines. The case outlines

20、 shall be in accordance with 1.2.2 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Die overcoat. Polyimide and silicone coatings are allowable as an overcoat on the die for alp

21、ha particle protection only. Each coated microcircuit inspection lot (see inspection lot as defined in MIL-PRF-38535) shall be subjected to and pass the internal moisture content test at 5000 ppm (see method 1018 of MIL-STD-883). The frequency of the internal water vapor testing shall not be decreas

22、ed unless approved by the preparing activity for class M. The TRB will ascertain the requirements as provided by MIL-PRF-38535 for classes Q and V. Samples may be pulled any time after seal. 3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance cha

23、racteristics are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are described in table I. Provided by IHSNo

24、t for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89567 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Condit

25、ions -55C TC+125C VSS= 0 V 4.5 V VCC 5.5 V unless otherwise specified Group A subgroups Device types Limits Unit Min Max Input leakage current ILI0.0 V VIH1, 2, 3 All -10 10 A Output low voltage VOLVCC= 4.5 V, IOL= 8.0 mA VIL= 0.8 V, VIH= 2.2 V 1, 2, 3 All 0.4 V Output high voltage VOHVCC= 4.5 V, IO

26、H= -2.0 mA VIL= 0.8 V, VIH= 2.2 V 1, 2, 3 All 2.4 V f = fs, outputs open VCC= 5.5 V 01-04 150 Operating supply current ICC1VCC= 5.5 V f = 15.3 MHz, outputs open 1, 2, 3 05 150 mA Standby power supply current ICC2R = W = RS = FL / RT = VIH, outputs open 1, 2, 3 All 25 mA Power down current ICC3All in

27、puts = VCC- 0.2 V, outputs open 1, 2, 3 All 4.0 mA Input capacitance CINVI= 0 V , f = 1.0 MHz TA= +25C, See 4.3.1c 4 All 8 pF Output capacitance with output deselected COUTVO= 0 V , f = 1.0 MHz TA= +25C, See 4.3.1c 4 All 12 pF Functional tests See 4.3.1d 7, 8A, 8B All See footnotes at the end of the

28、 table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89567 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteri

29、stics - continued. Test Symbol Conditions -55C TC+125C VSS= 0 V 4.5 V VCC 5.5 V unless otherwise specified Group A subgroups Device types Limits Unit Min Max 01 7.0 02 10 03 12.5 04 15 Shift frequency fS9, 10, 11 05 20 MHz 01 140 02 100 03 80 04 65 Read cycle time tRC9, 10, 11 05 50 ns 01 120 02 80

30、03 65 04 50 Access time tA9, 10, 11 05 40 ns 01, 02 20 03, 04 15 Read recovery time tRR9, 10, 11 05 10 ns 01 120 02 80 03 65 04 50 Read pulse width tRPW9, 10, 11 05 40 ns 01-04 10 Read pulse low to data bus at low-Z tRLZ 1/ 9, 10, 11 05 5.0 ns 01-04 10 Write pulse low to data bus at low-Z tWLZ 1/ 2/

31、 9, 10, 11 05 5.0 ns Data valid from read pulse high tDV CL= 30 pF See figures 4 and 5 9, 10, 11 All 5.0 ns See footnotes at the end of the table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89567 DEFENSE

32、 SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - continued. Test Symbol Conditions -55C TC+125C VSS= 0 V 4.5 V VCC 5.5 V unless otherwise specified Group A subgroups Device types Limits Unit Min Max 01

33、35 02, 03, 04 30 Read pulse high to data bus high-Z tRHZ 1/ 9, 10, 11 05 25 ns 01 140 02 100 03 80 04 65 Write cycle time tWC9, 10, 11 05 50 ns 01 120 02 80 03 65 04 50 Write pulse width tWPW9, 10, 11 05 40 ns 01, 02 20 03, 04 15 Write recovery time tWR9, 10, 11 05 10 ns 01, 02 40 03, 04 30 Data set

34、up time tDS9, 10, 11 05 20 ns 01-03 10 04 5.0 Data hold time tDH 9, 10, 11 05 0.0 ns 01 140 02 100 03 80 04 65 Reset cycle time tRSCCL= 30 pF See figures 4 and 5 9, 10, 11 05 50 ns See footnotes at the end of the table. Provided by IHSNot for ResaleNo reproduction or networking permitted without lic

35、ense from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89567 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - continued. Test Symbol Conditions -55C TC+125C VSS= 0 V 4.5 V VCC 5.5 V unless o

36、therwise specified Group A subgroups Device types Limits Unit Min Max 01 120 02 80 03 65 04 50 Reset pulse width tRS 9, 10, 11 05 40 ns 01, 02 20 03, 04 15 Reset recovery time tRSR 9, 10, 11 05 10 ns 01 120 02 80 03 65 04 50 Reset setup time tRSS9, 10, 11 05 40 ns 01 140 02 100 03 80 04 65 Retransmi

37、t cycle time tRTC9, 10, 11 05 50 ns 01 120 02 80 03 65 04 50 Retransmit pulse width tRTCL= 30 pF See figures 4 and 5 9, 10, 11 05 40 ns 01, 02 20 03, 04 15 Retransmit recovery time tRTR 9, 10, 11 05 10 ns 01 140 02 100 03 80 04 65 Reset to empty flag low tEFLCL= 30 pF See figures 3 and 4 9, 10, 11 0

38、5 50 ns See footnotes at the end of the table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89567 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 8 DSCC FORM 2234 APR 97 TAB

39、LE I. Electrical performance characteristics - continued. Test Symbol Conditions -55C TC+125C VSS= 0 V 4.5 V VCC 5.5 V unless otherwise specified Group A subgroups Device types Limits Unit Min Max 01-03 60 04 45 Read low to empty flag low tREF 9, 10, 11 05 35 ns 01-03 60 04 45 Read high to full flag

40、 high tRFF 9, 10, 11 05 35 ns 01-03 60 04 45 Write high to empty flag high tWEF9, 10, 11 05 35 ns 01-03 60 04 45 Write low to full flag low tWFF9, 10, 11 05 35 ns 01 140 02 100 03 80 04 65 Reset to half-full and full flag high tHFH tFFH 9, 10, 11 05 50 ns 01 120 02 80 03 65 04 50 Read / write to XO

41、low tXOL 9, 10, 11 05 40 ns 01 120 02 80 03 65 04 50 Read / write to XO high tXOHCL= 30 pF See figures 3 and 4 9, 10, 11 05 40 ns See footnotes at the end of the table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZ

42、E A 5962-89567 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 9 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - continued. Test Symbol Conditions -55C TC+125C VSS= 0 V 4.5 V VCC 5.5 V unless otherwise specified Group A subgroups Device types L

43、imits Unit Min Max 01 120 02 80 03 65 04 50 XI pulse width tXI 9, 10, 11 05 40 ns XI recovery time tXIR 9, 10, 11 All 10 ns XI set-up time tXIS 9, 10, 11 All 15 ns 01 120 02 80 03 65 04 50 Retransmit setup time tRTS9, 10, 11 05 40 ns 01 120 02 80 03 65 04 50 Read pulse width after EF high tRPE 9, 10

44、, 11 05 40 ns 01 140 02 100 03 80 04 65 Write low to half-full flag low tWHF 9, 10, 11 05 50 ns 01 140 02 100 03 80 04 65 Read high to half-full flag high tRHFCL= 30 pF See figures 3 and 4 9, 10, 11 05 50 ns See footnotes at the end of the table. Provided by IHSNot for ResaleNo reproduction or netwo

45、rking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89567 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 10 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - continued. 1/ If not tested, shall be guaranteed to

46、the limits specified in table I. 2/ Only applies to read data flow-through mode. Test Symbol Conditions -55C TC+125C VSS= 0 V 4.5 V VCC 5.5 V unless otherwise specified Group A subgroups Device types Limits Unit Min Max 01 120 02 80 03 65 04 50 Write pulse width after FF high tWPF CL= 30 pF See figu

47、res 3 and 4 9, 10, 11 05 40 ns Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89567 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 11 DSCC FORM 2234 APR 97 Device types All Case outlines X and Y Z Terminal number Terminal symbol 1 W NC 2 D8W 3 D3D84 D2 35 D1D26 D0 17 XI D08 FF XI 9 Q0FF 10 Q1Q011 Q2 112 Q3NC 13 Q8Q214 GND Q315 R Q816 Q4GND 17 Q5NC 18 Q6R 19 Q7Q420 XO / HF Q521 EF Q622 RS Q72

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