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本文(DLA SMD-5962-89610 REV E-2013 MICROCIRCUIT LINEAR VOLTAGE REFERENCE 2 5 VOLT MONOLITHIC SILICON.pdf)为本站会员(orderah291)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-89610 REV E-2013 MICROCIRCUIT LINEAR VOLTAGE REFERENCE 2 5 VOLT MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add one vendor, CAGE 01295. Make changes to 1.3, table I, and editorial changes throughout. 90-06-13 M. A. FRYE B Drawing updated to reflect current requirements. - ro 05-06-01 R. MONNIN C Update boilerplate paragraphs to current MIL-PRF-38535 re

2、quirements. - ro 11-04-19 C. SAFFLE D Add device type 02 along with device class V and radiation hardened requirements. Add case outline H, descriptive designator GDFP1-F10 and paragraph 3.2.3. For device type 01, case outline X, correct power dissipation by deleting 115 mW and substituting with 52

3、mW as specified under paragraph 1.3. - ro 12-03-30 C. SAFFLE E Make correction to the Reverse breakdown voltage test as specified under Table I. For subgroups 2, 3, delete 2.460 V minimum, 2.535 V maximum and substitute 2.485 V minimum, 2.515 V maximum. - ro 13-05-30 C. SAFFLE THE ORIGINAL FIRST SHE

4、ET OF THIS DRAWING HAS BEEN REPLACED. REV SHEET REV SHEET REV STATUS REV E E E E E E E E E E E E E OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAW

5、ING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAY MONNIN APPROVED BY WILLIAM J. JOHNSON MICROCIRCUIT, LINEAR, VOLTAGE REFERENCE, 2.5 VOLT, MONOLITHIC SILICON DRAWING APPROVAL DATE 89-06-26 AMSC N/A REVISION LEVEL E SIZE A CAGE CODE 67268 5962-89610

6、SHEET 1 OF 13 DSCC FORM 2233 APR 97 5962-E320-13 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89610 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1

7、.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a c

8、hoice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following examples. For device classes M and Q: 5962 - 89610 01 X A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Case outline (see 1.2.4) Lead finish (

9、see 1.2.5) / / Drawing number For device class V: 5962 R 89610 02 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and

10、 V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1

11、.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Temperature range Circuit function 01 LT1009 -55C to +125C Voltage reference diode 02 RH1009 -55C to +125C Voltage reference diode 1.2.3 Device class designator. The device class designator i

12、s a single letter identifying the product assurance level as listed below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q designators will not be included in the PIN and will not be marked on the device. Device class Device requir

13、ements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 Provided by IHSNot for ResaleNo reproduction or networking permitte

14、d without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89610 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive design

15、ator Terminals Package style X See figure 1 3 Can H GDFP1-F10 10 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ Reverse current (IR) . 20 mA Forward current (IF

16、) 10 mA Storage temperature range . -65C to +150C Lead temperature (soldering, 10 seconds) . +300C For device type 01 case outline X: Maximum power dissipation (PD) ambient . 52 mW Junction temperature (TJ) . +150C Thermal resistance, junction-to-case (JC) . 80C/W Thermal resistance, junction-to-amb

17、ient (JA) 440C/W Ambient operating temperature range (TA) . -55C to +125C For device type 02: Maximum power dissipation (PD) ambient : Case outline H . 52 mW Case outline X . 52 mW Junction temperature (TJ) : Case outline H . +163C Case outline X . +169C Thermal resistance, junction-to-case (JC) : C

18、ase outline H . 40C/W Case outline X . 80C/W Thermal resistance, junction-to-ambient (JA) : Case outline H 170C/W Case outline X . 440C/W 1.4 Recommended operating conditions. Ambient operating temperature range (TA) . -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 5

19、0 300 rads(Si)/s) . 100 krads(Si) 2/ The manufacturer supplying RHA device type 02 on this drawing has performed characterization test to demonstrate that the parts do not exhibit enhanced low dose rate sensitivity (ELDRS) in accordance with MIL-STD-883, method 1019, paragraph 3.13.1.1. Therefore th

20、ese parts may be considered ELDRS free at a level of 50 krads(Si). _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ The manufacturer supplying device type 02 has perfo

21、rmed characterization testing in accordance with MIL-STD-883 method 1019 paragraph 3.13.1.1 and the parts exhibited no enhanced low dose rate sensitivity (ELDRS) at a level of 50 krads(Si). The radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in

22、 MIL-STD-883, method 1019, condition A . Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89610 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCU

23、MENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEF

24、ENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - Lis

25、t of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/quicksearch.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In

26、 the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. Th

27、e individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The in

28、dividual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 a

29、nd herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.2 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Radiation exposur

30、e circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise

31、specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in tabl

32、e IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the

33、manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appen

34、dix A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89610 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 5 DSCC FORM 2234 APR 97 3.5.1 Certification/compliance mark. The certificati

35、on mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML

36、-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of com

37、pliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, append

38、ix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device c

39、lass M. For device class M, notification to DLA Land and Maritime-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA L

40、and and Maritime s agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class

41、 M devices covered by this drawing shall be in microcircuit group number 59 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89610 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-39

42、90 REVISION LEVEL E SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Reverse breakdown voltage VZIR= 1 mA 1 01, 02 2.495 2.505 V 2,3 2.485 2.515 Rever

43、se breakdown voltage change with current VZ/ IR400 A IR 10 mA 1 01, 02 6 mV 2,3 10 M,D,P,L 1 02 8 M,D,P,L,R 1 02 10 Forward bias voltage VFIF= 2 mA, TA= +25C 1 01 -1 -0.4 V Adjustment range VARIR= 1 mA, VADJ= +0.6 V to VZ-0.6 V 1 01 15 mV 02 15 Reverse dynamic 3/ impedance RZIR= 1 mA 1 01, 02 0.6 2,

44、3 1.0 M,D,P,L 1 02 0.8 M,D,P,L,R 1 02 1.0 Temperature 4/ stability VZTmin TA Tmax1,2,3 01, 02 15 mV Average temperature coefficient 4/ 5/ TCTmin TA Tmax1,2,3 01, 02 35 ppm / C 1/ RHA devices supplied to this drawing have been characterized through all levels M, D, P, L, and R of irradiation. However

45、, this device is tested at RHA level L and R level. Pre and Post irradiation values are identical unless otherwise specified in Table I. When performing post irradiation electrical measurements for any RHA level, TA= +25C. 2/ The manufacturer supplying device type 02 has performed characterization t

46、esting in accordance with MIL-STD-883 method 1019 paragraph 3.13.1.1 and the parts exhibited no enhanced low dose rate sensitivity (ELDRS) at a level of 50 krads(Si). The radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 10

47、19, condition A . 3/ RZis guaranteed by VZ/ IRtest. 4/ If not tested, shall be guaranteed to the limits specified in table I herein. 5/ Average temperature coefficient is defined as the total voltage change divided by the specified temperature range. Provided by IHSNot for ResaleNo reproduction or n

48、etworking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89610 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 7 DSCC FORM 2234 APR 97 Case X FIGURE 1. Case outline. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89610 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 8 DSCC FORM 2234 APR 97 Case X Symbol Dimensions In

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