DLA SMD-5962-89693 REV C-2009 MICROCIRCUIT DIGITAL ADVANCED CMOS RADIATION HARDENED QUAD D FLIP-FLOP TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf

1、 n REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add device class V criteria. Editorial changes throughout. - jak 98-06-22 Monica L. Poelking B Add RHA criteria and limits. Editorial changes throughout. - jak 99-03-10 Monica L. Poelking C Update the boilerplate paragraphs to current requireme

2、nts as specified in MIL-PRF-38535. - jak 09-04-08 Thomas M. Hess REV SHET REV C C C SHEET 15 16 17 REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Tim H. Noh STANDARD MICROCIRCUIT DRAWING CHECKED BY Ray Monnin DEFENSE SUPPLY CENTER COL

3、UMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A. Frye AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 89-06-28 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, QUAD D FLIP-FLOP, TTL COMPATIBLE

4、INPUTS, MONOLITHIC SILICON AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-89693 SHEET 1 OF 17 DSCC FORM 2233 APR 97 5962-E193-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89693 DEFENSE SUPPLY CEN

5、TER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finis

6、hes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following examples. For device classes M and Q: 5962 R 89693 01 E A Federal RHA Device Case

7、Lead stock class designator type outline finish designator (see 1.2.1) (see 1.2.2) (see 1.2.4) (see 1.2.5) / / Drawing number For device class V: 5962 R 89693 01 V E A Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (

8、see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA lev

9、els and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54ACT175 Radiation hardened, quad D flip-flop, TTL compatible inputs 1.2.3

10、Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with

11、 MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2 T-16 16 Dual-in-line F GDFP2-F16 or CDFP3

12、 F-16 16 Flat pack 2 CQCC1-N20 20 Square leadless chip carrier Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89693 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM

13、 2234 APR 97 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) . -0.5 V dc to +6.0 V dc DC input voltage range (VIN) . -0.5 V dc to VCC+0.5

14、V dc DC output voltage range (VOUT) -0.5 V dc to VCC+0.5 V dc DC input diode current (IIK) 20 mA DC output diode current (IOK) . 20 mA DC output source or sink current (per pin) (IOUT). 50 mA DC VCCor GND current 100 mA Maximum power dissipation (PD) 500 mW Storage temperature range (TSTG) -65C to +

15、150C Lead temperature (soldering, 10 seconds) +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) . +175C 4/ 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VCC) . +4.5 V dc to +5.5 V dc Input voltage range (VIN) . +0.0 V dc to VCCOutput vol

16、tage range (VOUT) +0.0 V dc to VCC Case operating temperature range (TC) -55C to +125C Input rise or fall rate *( VCC= 4.5 V to 5.5 V). 0 to 8 ns/V 1.5 Radiation features. Maximum total dose available (dose rate = 50- 300 rads(Si)/s) (MIL-STD-883, method 1019, condition A, followed by extended room

17、temperature anneal) effective dose rate 165 mrads(Si)/s 1 X 105Rads (Si) 5/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device, Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are ref

18、erenced to GND. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C. 4/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method

19、 5004 of MIL-STD-883. 5/ Device type 01 is irradiated at dose rate = 50 - 300 rads (Si)/s in accordance with MIL-STD-883, method 1019, condition A, and is guaranteed to a maximum total dose specified. The effective dose rate after extended room temperature anneal = 1 rad (Si)/s per MIL-STD-883, meth

20、od 1019, condition A, section 3.11.2. The total dose specification for this device only applies to the specified effective dose rate, or lower, environment. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-896

21、93 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein.

22、 Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircu

23、its. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ o

24、r from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those c

25、ited in the solicitation or contract. ELECTRONIC INDUSTRIES ALLIANCE (EIA) JESD-20 - Standard for Description of 54/74ACXXXX and 54/74ACTXXXX Advanced High-Speed CMOS Devices. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena

26、(SEP) Induced by Heavy Ion Irradiation of semiconductor Devices. (Copies of these documents are available online at http:/www.astm.org or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). (Copies of this document is available online at www.eia.org/ or

27、 from the Electronics Industries Alliance, 2500 Wilson Boulevard, Arlington, VA 22201-3834). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes

28、applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Manag

29、ement (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construct

30、ion, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.

31、2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-8969

32、3 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4.

33、3.2.6 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter li

34、mits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgrou

35、ps specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to spac

36、e limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with M

37、IL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For de

38、vice classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approv

39、ed source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or

40、for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits deliv

41、ered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For

42、device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Dev

43、ice class M devices covered by this drawing shall be in microcircuit group number 38 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89693 DEFENSE SUPPLY CENTER COLUMBUS COLUM

44、BUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test and MIL-STD-883 test method 1/ Symbol VCCGroup A subgroups Limits 4/ Unit Test conditions 2/ 3/ -55C TC+125C +4.5 V VCC +5.5 V unless otherwise specified Device type and device c

45、lass Min Max Positive input clamp voltage 3022 VIC+For input under test, IIN= +1.0 mA All V 0.0 V 1 0.4 1.5 V Negative input clamp voltage 3022 VIC-For input under test, IIN= -1.0 mA All V Open 1 -0.4 -1.5 V All All 4.5 V 1, 2, 3 4.4 VIH= 2.0 V or VIL= 0.8 V IOH= -50 A All All 5.5 V 1, 2, 3 5.4 All

46、All 4.5 V 1, 2, 3 3.7 VIH= 2.0 V or VIL= 0.8 V IOH = -24 mA All All 5.5 V 1, 2, 3 4.7 High level output voltage 3006 VOH5/ VIH= 2.0 V or VIL= 0.8 V IOH= -50 mA All All 5.5 V 1, 2, 3 3.85 V All All 4.5 V 1, 2, 3 0.10 VIH= 2.0 V or VIL= 0.8 V IOL= +50 A All All 5.5 V 1, 2, 3 0.10 All All 4.5 V 1, 2, 3

47、 0.50 VIH= 2.0 V or VIL= 0.8 V IOL= +24 mA All All 5.5 V 1, 2, 3 0.50 Low level output voltage 3007 VOL5/ VIH= 2.0 V or VIL= 0.8 V IOL= +50 mA All All 5.5 V 1, 2, 3 1.65 V All All 4.5 V 1, 2, 3 2.0 High level input voltage VIH6/ All All 5.5 V 1, 2, 3 2.0 V All All 4.5 V 1, 2, 3 0.8 Low level input v

48、oltage VIL6/ All All 5.5 V 1, 2, 3 0.8 V Input leakage current high 3010 IIHVIN= 5.5 V All All 5.5 V 1, 2, 3 1.0 A Input leakage current low 3009 IILVIN= 0.0 V All All 5.5 V 1, 2, 3 -1.0 A See footnote at end of table.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89693 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 7 DSCC FOR