DLA SMD-5962-89716 REV B-1996 MICROCIRCUIT DIGITAL CMOS 4 X 16-BIT MULTILEVEL PIPELINE REGISTER MONOLITHIC SILICON《硅单片 4 X 16-BIT多级廉线寄存器 氧化物半导体数字微型电路》.pdf

1、 - -_ - SMD-5962-89716 REV B m 9999996 0087906 928 m DEFENSE LOGISTICS AGENCY DEFENSE ELECTRONICS SUPPLY CENTER 1507 WILMINGTON PIKE DAYTON, OH 45444-5765 IN REPLY REFERTO: DESC-ELDC (Mr. Gauder/ (AV 986) 513-296-8526/1tg) MAY 0% a SUBJECT: Notice of Revision (NOR) 5962-R108-96 for Standard Microcir

2、cuit Drawing (SMD) 5962-89716. Military/Industry Distribution The enclosed NOR is approved for use effective as of the date of the NOR. In accordance with MIL-STD-100 SMD holders should, as a minimum, handwrite those changes described in the NOR to sheet 1 of the subject SMD. NOR should be attached

3、to the subject SMD for future reference. After completion, the Those companies who were listed as approved sources of supply prior to this action have agreed to actions taken on devices for which they had previously provided DESC a certificate of compliance. This is evidenced by an existing active c

4、urrent certificate of compliance on file at DESC along with a DESC record of verbal coordination. The certificate of compliance for these devices is considered concurrence with the new revision unless DESC is otherwise notified. If you have comments or questions, please contact Larry T. Gauder at (A

5、V1986-8526 / (513) 296-8526. 1 Encl MONICA L. POELKING Chief, Custom Microelectronics Branch Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,- SMD-5962-897Lb REV B 9b 0087907 8b4 1. DATE (Y YMMDD 96- 04 - 15 NOTICE OF REVISION (NOR) This revision desc

6、ribed below has been authorized for the docunent listed. Public reporting-burden-for this collection-is esti-ted to average 2 hours per response the time for reviewin dafa needed, ad conpfeting and reviewing the collection.of informationz Se- ccmpnts regarding this burden estimate or an other aspect

7、 of this collection of information including suggestions for reducing this kirden io De rtment of Defense Washingtion Headquarteh Services Directorate for Information Operations-and Eprts, 1215 Jeffe;son Davis Highway, Sujte 1204, Arlin ton VA 22202-4302 and to the Office of ana ement and Budget Pap

8、erwork Reduction Pro ect (0784-0!88), Washington DC 20503. ACTIVITY NUMBER LISTED IN ITEM 2 OF THIS FORM. jncluding instructions, searching existing data-sources, gathering and mainfaining the PLEASE DO NOT lETURN YOUR COMPLtTED FORM TO EITHER OF THiSE ADDRESSED RETURN COMPLETED FORM TO THE GOVERNME

9、NT ISSUING CONTRACTING OFFICER FOR THE CONTRACT/ PROCURING Form Approved OMB NO. 0704-0188 2- ACTIVITY NO. 3. DOOAAC b. ADDRESS (Street, City, State, Zip Code) 6. NOR NO. 5962- R 1 08- 96 7. CAGE CODE 8. DOCUMENT NO. 4. ORIGINATOR Defense Electronics Supply Center 1507 Uilmington Pike Dayton, OH 454

10、44-5765 a. TYPED NAME (First, Middle Initial, Last) 5962-89716 MICROCIRCUIT, DIGITAL, CMOS, 4 X 16-BIT MULTILEVEL PIPELINE REGISTER, MONOLITHIC SILICON. 9. TITLE OF DOCUMENT a. CURRENT b. NEU A I 11. ECP NO. I 10. REVISION LETTER 3. (X one) X (1) Existing docwnt supplemented by the NOR may be used i

11、n manufacture. (2) Revised docwnt must be received before manufacturer may incorporate this change. I n I P I 12. CONFIGURATION ITEM (OR SYSTEM) TO UHICH ECP APPLIES AL L 13. DESCRIPTION OF REVISION 3. ACTIVITY AUTHORIZED TO APPROVE CHANGE FOR GOVERNMENT ELDC Sheet 1: Revisions ltr column; add I1B8l

12、. Revisions description colum; add “Changes in accordance with NOR 5962-RlO8-96l1. Revisions date colum; add “96-04-15 II. Revision level block; add IIBII. Rev status of sheets; For sheets 1 and 5 add I1B1l. TABLE I. Output short current, Ios; delete test in its entirety. Revision level block; add I

13、lBll. Sheet 5: c. TYPED NAME (First, Middle Initial, Last) Monica L. Poelking j. TITLE Chief, Custom Microelectronics 15a. ACTIVITY ACCOMPLISHING REVISION ELDC e. SIGNATURE f. DATE SIGNED (Y YMMDD Monica L. Poelking 96- O4 - 15 b. REVISION COMPLETED (Signature) c. DATE SIGNED ( YYMMDD ) Larry T. Gau

14、der 96-04- 15 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-877Lb REV A 9799996 0034077 777 Form Approved OMB NO. 0704-0188 DATE (m) 92-12-11 NOTICE OF REVISION (NOR) (See MIL-STD-480 for instructions) This revision described below has bee

15、n authorized for the document listed. Public reporting burden for this collection is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of inf

16、ormation. Send cmnts regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden, to Washington Headquarters Services, Directorate for Infomtion Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22

17、202-4302, and to the Office of Information and Regulatory Affairs, Office of Management and Budget, Washington, DC 20503. 1. ORIGIIIATOR “E AIID AWRESS 2. CAaODE 3. mno. Defense Electronics Supply Center Dayton, Ohio 45444-5270 67268 5962-R020-93 4. CAaw 5. DOclREIIT No. 5962-89716 67268 6. TITLE W

18、WCUEIIT 7. WISIOW m MICROCIRCUITS, DIGITAL, CMOS, 4 X 16-BIT MULTILEVEL PIPELINE REGISTER, HOHOLITHIC SILICON (Current) (New) A 8. Ea Wo. 9. COnFIGURATIOn ITEH (OR !%Sim) TO WHICH E APPLIES 10. DESCRIPTIOW M REVISIOII Sheet 1: Revisions ltr colm; add “A“. Revisions description colunn; add “Changes i

19、n accordance with NOR 5962-R020-93“. Revisions date column; add “92-12-11“. Revision level block; add “A“. Rev status of sheets; For sheets 1, 5, and 7; add “A“. Sheet 5: Table I, Output short circuit test, maximum limit; change from: “-125“ to: “-200“. Table I, Output short circuit test, minimum li

20、mit: add: “-60“. Revision level block; add: “A“. Sheet 7: Footnote 3; change from: “Duration of short circuit should not exceed 30 seconds.“ to: “Duration of short circuit should not exceed 30 seconds. Minimum and maximum values are based on the magnitude of the current. The sign indicates direction

21、 only.“ Revision level block; add: “A“. 11. THIS SECTIM FOR GovERIcMi USE OlllY a. CHECK ONE XIEXISTING DOCUMENT SUPPLEMENTED CUSTODIAN OF MASTER DOCUMENT BY THIS NOR MAY BE USED IN MANUFACTURE. MAY INCORPORATE THIS CHANGE. FURNISH REVISED DOCUMENT TO: REVISED DOCUMENT MUST BE RECEIVED BEFORE MANUFA

22、CTURER SHALL MAKE ABOVE REVISION AND b. ACTIVITY AUTHORIZED TO APPROVE SIGNATURE AND TITLE DATE (YYMMW) CHANGE FOR GOVERNMENT DESC-ECC Chief, Custom Microelectronics Monica L. Poelking 92-12-1 1 12. ACTIVITY ACWIIPLISHING REVISIOW REVISION COMPLETED (Signature) DATE (YYM13w) b Form 1695, JUL 88 Prev

23、ious editions are obsolete. DESC-ECC Wanda L. Meadows 92-12-11 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-59b2-897Lb REV A E 9979996 O034078 603 E _ - REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED REV III SHEET 15 16 REV STATUS OF SHEET

24、S PMIC NIA STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A SHEET CHECKED BY u - DRAWING APPROVAL DATE 92-03-1 7 REVISION LEVEL DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 MICROCIRCUITS, DIGITAL, CMOS, REGI

25、STER, MONOLITHIC SILICON 4 X 16-BIT MULTILEVEL PIPELINE SIZE CAGE CODE 5962-89716 A 67268 SHEET 1 OF 16 I DESC FORM 193 JUL 91 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. 5962-E460 Provided by IHSNot for ResaleNo reproduction or networking permitted without lice

26、nse from IHS-,-,-1. SCOPE 1.1 m. This drawing form8 a part of a ono part - one part nunber docuirentatlon system tree 6.6 herein). Two ?roduct a#6urance clseree consisting of military high reliability (device clasrca 8, Q, and H and apace application device claosea I and Y), end a choice of care out

27、lines and lead finisher ara available and Ire reflected in the Part 3r Identifying Number (PIN). Device claas H microcircuits reprerent non-JAN class B microcircuit8 in accordance with 1.2.1 of HIL-STD-883, llProvleions for the use of HIL-STD-883 in conjunction with cwpliant non-JAN devices“. Uhen $

28、vai tabla, a choice of radiation hardness assurance (RHA) levels are ref lccted in the PIN. 1.2 m. 5962 The PIN shall be as shown in the following example: - o1 H X 8971 6 I I I - I Lead Caoe Device - I I I l I I Dcvlcc MA Faderal otock class designator tYP claw outline finish designator (Seo 1.2.1)

29、 (Ses 1.2.2) dosignator (9 1.2.4) (6ee 1.2.5) L I (s80 1.2.3) I Drawing number 1.2.1 Radiation hardness assurance (RHA) designator. Device claases H, 0, and S RHA marked devices shall meet the HIL-M-3EI510 opacified RHA level8 end shall be marked with the appropriate RHA designator. Device classes Q

30、 and V RHA marked devices shall meet the MIL-1-38535 epecifid RHA Levels and shall be mrked with the appropriate RHA dreignator. A dash (-) indicates a non-RHA device. 1.2.2 Devlce typds). The davice type(a) shall identify the circuit function as follows: Devlce type Generic nuliber Circuit function

31、 Propagation delay o1 LPR520 4 x Ibbit multilevel pipeline regirter 30 na Q2 LPR520 4 x 16-blt multilevel pipeline regieter 24 ns 03 LPR520 4 x 16-blt irultilevel pipeline register 18 ns o4 LPR521 4 x 14-bit multilevel pipeline register 30 ns 05 LPR521 Ii x l-bit multilevel pipeline register 24 ns 0

32、5 LPRS21 4 x 16-bit rwltilevel pipeline register 18 na 1.2.3 aVlCe cl sa drei nator. The device claar designator rhrll be II single lettor identifying the product asrurancdPlavol Devlce clase pevice retiuirenents documentation t Vendor self-certification to the requirements for non-JAN class B micro

33、circuits in accordance with 1.2.1 of MIL-STD-883 i3 or S Q or V Ccrt If i cat ion and qualification to HIL-H-38510 Certification and qualification to MIL-1-38535 1.2.4 Cage outline(W MKF herein for groups A, Ei, C, D, and E inspectione (ses k4.1 through 4.4.51. shall be in accordance with MIL-1-3853

34、5. Inspections to be performed shall be those specified in MIL-1-38535 and herein for groups A, E, C, D, and E inspections (sbc 4.4.1 through 4.6.5). 4.3.2 Qualification Snspection for device classes P and V. Qualification inspection for device classes Q and V STAMImf ZED SIZE 5962-89716 MILITARY DR

35、AWIld! A DEEENSE BLECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 i REVISION LEVEL SHEET 12 DESC FORM l93A Jml 91 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,- - - SMD-5962-87716 REV A 9999996 0034090 LOQ E STANDARDIZED SIZE MILITARY DRAWING A DEFENSE

36、 ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL 4.4 Conformance inspection. Quality conformance inspection for device class M shall be in accordance with IIL-STD-883 (see 3.1 herein) and as specified herein. le in accordance with MIL-M-38510 and as specified herein. ;hall be those speci

37、fied in method 5W5 of MIL-STD-883 and herein for groups A, 8, C, D, and E inspections (see 4.4.1 :hrough 4.4.5). ncluding groups A, B, C, D, and E inspections and as specified herein except where option 2 of MIL-1-38535 permits ilternate in-line control testing. Quality conformance inspection for de

38、vice classes B and S shall Inspections to be performed for device classes M, 0, and S Technology conformance inspection for classes Q and V shall be in accordance with MIL-1-38535 4.4.1 Group A inspection. a. Tests shall be as specified in table IIA herein. b. For device class M, subgroups 7 and 8 t

39、ests shall consist of verifying the functionality of the device. For device classes B and S, subgroups 7 and 8 tests shall be sufficient to verify the truth table as approved by the qualifying activity. functionality of the device; these tests shall have been fault graded in accordance with MIL-STD-

40、883, test method 5012 (see 1.5 herein). which may afftf? capacitance. For device classes (;I and V, subgroups 7 and 8 shall include verifying the c. Subgroup 4 (C measurement) shall be measured only for the initial test and after process or design changes A minimum sample size of 5 devices with zero

41、 rejects shall be required. 5962-89716 SHEET 13 TABLE IIA. Electrical test requirements. Subgroups Subgroups Test requirements I (per method 5005,table I) /(per MIL-1-38535, i- I Device 1 Clais Interim electrical parameters (see 4.2) 1 I Final electrical I/ 1, parameters (see 4.2) I 2;3,7,8, I 9,10,

42、11 I Group A test I 1/2/3,4, requirements (see 4.4) I 7,8,9, I 10,ll I I I Group B end-point electrical Group C end-point electrical 1,7,9 parameters (see 4.4) parameters (see 4.4) Group D end-point electrical parameters (see 4.4) parameters (see 4.4) Group E end-point electrical 1,7,9 ! Devi ce cla

43、ss B 1/7,9 I/ 1, 2;3, 7,8, 9,10,11 1,2,3,4, 7,8,9 10,ll 1,7,9 1,7,9 I table III) I I Device I Device I Device class 1 clac 1 cl;ss S 1,7,9 1 1,7,9 1 1,7,9 ! I 1,7,9 j j 1,7,9 1,7,9 1 1,7,9 I 1,7,9 I I - I/ PDA applies to subgroup 1. - 2/ PDA applies to subgroups 1 and 7. 4.4.2 Group B inspection. Th

44、e group B inspection end-point electrical parameters shall be as specified in table IIA lerein. 4.4.3 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA ierein. Provided by IHSNot for ResaleNo reproduction or networking permitted without lic

45、ense from IHS-,-,-4-4.3.1 Additional criteria for device classes H, B, and S. Steady-state life test conditions, method 1005 of MIL-STD-883: a. Test condition A: For device class M, the test circuit shall be suhitted to DESC-ECC for review with the certificate of coinpliance. activity, For device cl

46、asses B and S, the test circuit shall k submitted to the qualifying b. JA = +125OC, aininum. c. Test duration: 4.4.3.2 Additional criteria for device classes Q and V. 1,OOO hours, except as permitted by method IWF, of MIL-STD-883. test temperature or approved alternatives shall be as specified in th

47、e device mnufacturers cul plan in accordance with flIL-1-38535. The steady-state life test circuit shall be submitted to DESC-ECC with the certificate of compliance end shall be under the control of tho device manufacturers TRB in accordance with HIL-1-38535. IIA herein. The eteady-state life test d

48、uration, test condition and 4.4.4 Group D inspection. The group D inspection end-point electrical paraactere shall be as specified in table TABLE IIB. Additional screeniw for device class V. Test Parthle impact Internal visual noise detection Nondestructive bond pull Reverse bias burn-in Burn-in Rad

49、ioqrephic I I HIL-STD-883, test method I Lot rwuiremmt 1 I 2020 I 1ooX I I I I 2010, condition A or I 10% I I I 2023 or I loox I I I I I 1M5, total of 240 hrs I 10% I I I approved alternate I approved alternate 1M5 1ooX at t125OC I 1Mm 2M2 4.4.5 Group E inspection. Group E inspection is required only for parts intxled to be marked as radiation hardness assured (sec 3.5 herein). RHA leve