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本文(DLA SMD-5962-89734 REV F-2013 MICROCIRCUIT DIGITAL ADVANCED CMOS HEX INVERTER TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf)为本站会员(eastlab115)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-89734 REV F-2013 MICROCIRCUIT DIGITAL ADVANCED CMOS HEX INVERTER TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Delete Vendor CAGE 18714. Add vendor CAGE 27014. Editorial changes throughout. 91-08-28 M. A. Frye B Add vendor CAGE 01295 for device type 01. Change boilerplate to add device class V criteria. 97-08-04 Monica L. Poelking C Add vendor CAGE F8859.

2、 Add case outline X. Add device type 03. Add delta limits, table III. Update boilerplate to MIL-PRF-38535 requirements. LTG 02-06-24 Thomas M. Hess D Change lead temperature for case outline X in section 1.3. Add section 1.5, radiation features. Update boilerplate to include radiation hardness assur

3、ed requirements. Add notes to figure 4, switching waveforms and test circuit. Editorial changes throughout. LTG 04-12-01 Thomas M. Hess E Add appendix A, microcircuit die. Update the boilerplate to MIL-PRF-38535 requirements and to include radiation hardness assurance requirements. Editorial changes

4、 throughout. jak 07-03-19 Thomas M. Hess F Update boilerplate paragraphs to the current MIL-PRF-38535 requirements. - LTG 13-05-16 Thomas M. Hess REV SHEET REV F F F F F F F SHEET 15 16 17 18 19 20 21 REV STATUS REV F F F F F F F F F F F F F F OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/

5、A PREPARED BY Marcia B. Kelleher DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A CHECKED BY Thomas J. Ricciuti APPROVED BY Michael A

6、. Frye MICROCIRCUIT, DIGITAL, ADVANCED CMOS, HEX INVERTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON DRAWING APPROVAL DATE 89-08-14 REVISION LEVEL F SIZE A CAGE CODE 67268 5962-89734 SHEET 1 OF 21 DSCC FORM 2233 APR 97 5962-E351-13 Provided by IHSNot for ResaleNo reproduction or networking permitted

7、 without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89734 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q an

8、d M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the followi

9、ng examples. For device class M and Q: 5962 - 89734 01 C A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Case outline (see 1.2.4) Lead finish (see 1.2.5) / / Drawing number For device class V: 5962 F 89734 01 V C A Federal stock class designator RHA designator (se

10、e 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Dev

11、ice class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit func

12、tion 01 54ACT04 Hex inverter, TTL compatible inputs 02 54ACT11004 Hex inverter, TTL compatible inputs 03 54ACT04 Hex inverter, TTL compatible inputs 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as listed below. Since the device

13、 class designator has been added after the original issuance of this drawing, device classes M and Q designators will not be included in the PIN and will not be marked on the device. Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compli

14、ant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89734 DLA LAND AND

15、 MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line D GDFP1-F14 or CDFP2-

16、F14 14 Flat pack X CDFP3-F14 14 Flat pack R GDIP1-T20 or CDIP2-T20 20 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings.

17、 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +6.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC + 0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc DC input diode current . 20 mA DC output diode current (per pin) 50 mA DC output source or sink current . 50 mA DC VCCor GN

18、D current . 150 mA Maximum power dissipation (PD) . 500 mW Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 10 seconds): Case outline X . +260C Other case outlines except case X +300C Thermal resistance, junction-to-case (JC) See MIL-STD-1835 Junction temperature (TJ) +1

19、75C 4/ 1.4 Recommended operating conditions. 2/ 3/ 5/ Supply voltage range (VCC) 4.5 V dc to +5.5 V dc Minimum high level input voltage (VIH) . 2.0 V dc Maximum low level input voltage (VIL) 0.8 V dc Input voltage range (VIN) +0.0 V dc to VCCOutput voltage range (VOUT). +0.0 V dc to VCCMaximum input

20、 rise or fall rate (t/V) . 0 to 8 ns/V Case operating temperature range (TC) . -55C to +125C 1.5 Radiation features. Device type 03: Maximum total dose available (dose rate = 50 300 rads (Si)/s) . 300 krads (Si) 6/ No single event latch-up (SEL) occurs at LET (see 4.4.4.2) . 93 MeVcm2/mg 6/ 1/ Stres

21、ses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ The limits for the parameters specified herein shall apply over t

22、he full specified VCCrange and case temperature range of -55C to +125C. 4/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883. 5/ Unused inputs must be held high or low to prevent them from

23、 floating. 6/ Limits obtained during technology characterization/qualification, guaranteed by design or process, but not production tested unless specified by the customer through the purchase order or contract. Provided by IHSNot for ResaleNo reproduction or networking permitted without license fro

24、m IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89734 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part o

25、f this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS

26、 MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available onli

27、ne at http:/quicksearch.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094). 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issu

28、es of these documents cited in the solicitation or contract. JEDEC SOLID STATE TECHNOLOGY ASSOCIATION (JEDEC) JESD20 - Standard for Description of 54/74ACXXXXX and 54/74ACTXXXXX Advanced High-Speed CMOS Devices. JESD78 - IC Latch-Up Test. (Copies of these documents are available online at http:/www.

29、jedec.org or from JEDEC Solid State Technology Association, 3103 North 10thStreet, Suite 240-S Arlington, VA 22201-2107). ASTM INTERNATIONAL (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices. (Copies of th

30、is document is available online at http:/www.astm.org/ or from ASTM International, 100 Barr Harbor Drive, P. O. Box C700, West Conshohocken, PA 19428-2959). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing

31、takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified

32、 herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN clas

33、s level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89734 DLA LAND AND

34、 MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 5 DSCC FORM 2234 APR 97 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein

35、 for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram s

36、hall be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4. 3.2.6 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and

37、 shall be made available to the preparing or acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table

38、IA and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN list

39、ed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator s

40、hall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as requ

41、ired in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements

42、of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as

43、an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of

44、conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime-

45、VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritimes agent, and the acquiring activity retain the opt

46、ion to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group n

47、umber 36 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89734 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electri

48、cal performance characteristics. Test and MIL-STD-883 test method 1/ Symbol Test conditions 2/ 3/ -55C TC +125C +4.5 V VCC +5.5 V unless otherwise specified Device type and device class VCCGroup A subgroups Limits 4/ Unit Min Max Positive input clamp voltage 3022 VIC+For input under test, IIN= 18 mA 01, 02 V 4.5 V 1, 2, 3 5.7 V For input under test, IIN= 1 mA 03 V GND 0.4 1.5 Negative input clamp voltage 3022 VIC-For input under test, IIN= -18 mA 01, 02 V 4.5 V 1, 2, 3 -1.2 V For input under test, IIN= -1 mA 03 V Open -0.4 -1.5 High level output voltage 3006 VOH 5/ For all input

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