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本文(DLA SMD-5962-89776 REV B-2007 MICROCIRCUIT LINEAR FAST QUAD NPN TRANSISTOR ARRAY MONOLITHIC SILICON《硅单片 四重NPN晶体管阵列 高速线性微型电路》.pdf)为本站会员(visitstep340)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-89776 REV B-2007 MICROCIRCUIT LINEAR FAST QUAD NPN TRANSISTOR ARRAY MONOLITHIC SILICON《硅单片 四重NPN晶体管阵列 高速线性微型电路》.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R201-93. 93-07-15 M. A. Frye B Incorporate revision A NOR. Update drawing to current requirements. drw 07-03-14 Robert M. Heber THE ORIGINAL FIRST PAGE OF THIS DRAWING HAS BEEN REPLACED. REV SHET REV SHET REV S

2、TATUS REV B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 PMIC N/A PREPARED BY Rick C Officer DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Charles E. Besore COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Mi

3、chael A. Frye MICROCIRCUIT, LINEAR, FAST QUAD NPN AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 91-02-11 TRANSISTOR ARRAY, MONOLITHIC SILICON AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-89776 SHEET 1 OF 8 DSCC FORM 2233 APR 97 5962-E299-07 Provided by IHSNot for ResaleNo

4、reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89776 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing describes device requirements for MIL-STD-883 com

5、pliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A. 1.2 Part or Identifying Number (PIN). The complete PIN is as shown in the following example: 5962-89776 01 C A Drawing number Device type (see 1.2.1) Case outline(see 1.2.2) Lead finish(see 1.2.3)1.2.1 Device t

6、ypes. The device types identify the circuit function as follows: Device type Generic number Circuit function 01 EN2016 Fast quad NPN transistor array 02 EN2016A Fast quad NPN transistor array 1.2.2 Case outlines. The case outlines are as designated in MIL-STD-1835 as follows: Outline letter Descript

7、ive designator Terminals Package style C GDIP1-T14 and CDIP2-T14 14 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier 1.2.3 Lead finish. The lead finish is as specified in MIL-PRF-38535, appendix A. 1.3 Absolute maximum ratings. Collector-base voltage (VCB) 40 V Emitter-base voltage (VEB). 5

8、V Collector-emitter voltage (VCE). 40 V Collector current (IC) 50 mA Base current (IB) 10 mA Power dissipation (PD) (TA= +25C): Each transistor . 500 mW Total package. 1.25 W Junction temperature (TJ) 175C Storage temperature range -65C to +150C Lead temperature (soldering, 10 seconds) +300C Thermal

9、 resistance, junction-to-case (JC). See MIL-STD-1835 Thermal resistance, junction-to-ambient (JA): Case C . 86C/W Case 2 100C/W 1.4 Recommended operating conditions. Ambient operating temperature range (TA) -55C to +125C Provided by IHSNot for ResaleNo reproduction or networking permitted without li

10、cense from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89776 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handb

11、ooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF

12、 DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents

13、are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the ref

14、erences cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38

15、535, appendix A for non-JAN class level B devices and as specified herein. Product built to this drawing that is produced by a Qualified Manufacturer Listing (QML) certified and qualified manufacturer or a manufacturer who has been granted transitional certification to MIL-PRF-38535 may be processed

16、 as QML product in accordance with the manufacturers approved program plan and qualifying activity approval in accordance with MIL-PRF-38535. This QML flow as documented in the Quality Management (QM) plan may make modifications to the requirements herein. These modifications shall not affect form,

17、fit, or function of the device. These modifications shall not affect the PIN as described herein. A “Q“ or “QML“ certification mark in accordance with MIL-PRF-38535 is required to identify when the QML flow option is used. 3.2 Design, construction, and physical dimensions. The design, construction,

18、and physical dimensions shall be as specified in MIL-PRF-38535, appendix A and herein. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.2 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.3 Electrical performance characteristics.

19、Unless otherwise specified herein, the electrical performance characteristics are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical

20、 tests for each subgroup are described in table I. 3.5 Marking. Marking shall be in accordance with MIL-PRF-38535, appendix A. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is

21、 not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. 3.5.1 Certification/compliance mark. A compliance indicator “C” shall be marked on all non-JAN devices built in compliance to MIL-PRF-38535, appendix A. The compliance indicator “C” shal

22、l be replaced with a “Q“ or “QML“ certification mark in accordance with MIL-PRF-38535 to identify when the QML flow option is used. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89776 DEFENSE SUPPLY CENTER

23、COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min MaxChange in base-emitter voltage 1/ VBEVCE= 4 V, IC= 1 mA

24、1 01 5.0 mV 2, 3 10.0 1 02 1.0 2, 3 2.0 hFE1VCE= 1 V, IC= 1 mA 1 01 10.0 % Static forward current ratio between each of six possible pairs of transistors 1/ 2/ 2, 3 20.0 1 02 5.0 2, 3 10.0 hFE2VCE= 1 V, IC= 10 mA 1 01 10.0 2, 3 20.0 1 02 5.0 2, 3 10.0 Static forward current transfer ratio 3/ hFE1VCE

25、= 1 V, IC= 1 mA 1 01 75 2, 3 50 1 02 150 2, 3 100 hFE2VCE= 1 V, IC= 10 mA 1 01 75 2, 3 50 1 02 100 2, 3 75 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89776 DEFENSE SUPPLY C

26、ENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - continued. Test Symbol Conditions -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min MaxBase to emitter saturation voltage 3/

27、VBEIC= 10 mA, IB= 1 mA 1 All 0.9 V 2, 3 1.1 Collector to emitter saturation voltage 3/ VCEIC= 10 mA, IB= 1 mA 1 All 0.2 V 2, 3 0.3 Breakdown voltage, collector to emitter 3/ BVCEIC= 1 mA, IB= 0 mA 1, 2, 3 All 40 V Breakdown voltage, collector to base 3/ BVCBIC= 10 A, IE= 0 mA 1, 2, 3 All 40 V Breakd

28、own voltage, emitter to base 3/ BVEBIE= 10 A, IC= 0 mA 1, 2, 3 All 5 V Collector cutoff current 3/ ICBVCB= 30 V, IE= 0 mA 1, 2, 3 All 50 nA Emitter cutoff current 3/ IEBVEB= 4 V, IC= 0 mA 1, 2, 3 All 50 nA 1/ VBEand hFEare measured between each of six possible pairs of transistors. 2/ hFEis calculat

29、ed based on the difference divided by the larger of the two readings. 3/ Applies to all four transistors. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89776 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43

30、218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 Device types 01 and 02 Case outlines C 2 Terminal number Terminal symbol 1 Q1 COLLECTOR NC 2 Q1 BASE Q1 COLLECTOR 3 Q1 EMITTER Q1 BASE 4 SUB Q1 EMITTER 5 Q2 EMITTER Q1 EMITTER 6 Q2 BASE SUB 7 Q2 COLLECTOR Q2 EMITTER 8 Q3 COLLECTOR Q2 EMITTER 9

31、Q3 BASE Q2 BASE 10 Q3 EMITTER Q2 COLLECTOR 11 SUB NC 12 Q4 EMITTER Q3 COLLECTOR 13 Q4 BASE Q3 BASE 14 Q4 COLLECTOR Q3 EMITTER 15 - - - Q3 EMITTER 16 - - - SUB 17 - - - Q4 EMITTER 18 - - - Q4 EMITTER 19 - - - Q4 BASE 20 - - - Q4 COLLECTOR NC = No connection FIGURE 1. Terminal connections. Provided by

32、 IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89776 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 3.6 Certificate of compliance. A certificate of compliance sh

33、all be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply shall affirm that the manufacturers product meets the requirements of MIL-PR

34、F-38535, appendix A and the requirements herein. 3.7 Certificate of conformance. A certificate of conformance as required in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change. Notification of change to DSCC-VA shall be re

35、quired for any change that affects this drawing. 3.9 Verification and review. DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the review

36、er. 4. VERIFICATION 4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. Screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. T

37、he following additional criteria shall apply: a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A or B. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The te

38、st circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein, except interim electric

39、al parameter tests prior to burn-in are optional at the discretion of the manufacturer. TABLE II. Electrical test requirements. MIL-STD-883 test requirements Subgroups (in accordance with MIL-STD-883, method 5005, table I) Interim electrical parameters (method 5004) 1 Final electrical test parameter

40、s (method 5004) 1*, 2, 3 Group A test requirements (method 5005) 1, 2, 3 Groups C and D end-point electrical parameters (method 5005) 1, 2, 3 * PDA applies to subgroup 1. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING S

41、IZE A 5962-89776 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 8 DSCC FORM 2234 APR 97 4.3 Quality conformance inspection. Quality conformance inspection shall be in accordance with method 5005 of MIL-STD-883 including groups A, B, C, and D inspections. The followin

42、g additional criteria shall apply. 4.3.1 Group A inspection. a. Tests shall be as specified in table II herein. b. Subgroups 4, 5, 6, 7, 8, 9, 10, and 11 in table I, method 5005 of MIL-STD-883 shall be omitted. 4.3.2 Groups C and D inspections. a. End-point electrical parameters shall be as specifie

43、d in table II herein. b. Steady-state life test conditions, method 1005 of MIL-STD-883. (1) Test condition A or B. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test

44、circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-STD-883. (2) TA= +125C, minimum. (3) Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883. 5. PACKAGING 5.1 Packaging requir

45、ements. The requirements for packaging shall be in accordance with MIL-PRF-38535, appendix A. 6. NOTES 6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. 6.2 Repla

46、ceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor-prepared specification or drawing. 6.3 Configuration control of SMDs. All proposed changes to existing SMDs will be coordinated with the users of record for the individual documents. This co

47、ordination will be accomplished using DD Form 1692, Engineering Change Proposal. 6.4 Record of users. Military and industrial users shall inform Defense Supply Center Columbus (DSCC) when a system application requires configuration control and the applicable SMD. DSCC will maintain a record of users

48、 and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronics devices (FSC 5962) should contact DSCC-VA, telephone (614) 692-0544. 6.5 Comments. Comments on this drawing should be directed to DSCC-VA, Columbus, Ohio 43218-3990, or telephone (614) 692-0547. 6.6 Approved sources of supply. Approved sources of supply are listed in MIL-HDBK-103. The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been submitted to an

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